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Composition analysis of single semiconductor nanowires using pulsed-laser atom probe tomography : Semiconductor nanowires

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Composition analysis of single semiconductor nanowires using pulsed-laser atom probe tomography : Semiconductor nanowires

Auteurs : RBID : Pascal:06-0522739

Descripteurs français

Pascal (Inist)
- Sonde atomique, Impulsion laser, Composition chimique, Impureté résiduelle, Catalyseur, Méthode étude, Semiconducteur, Nanofil, Indium arséniure, Silicium, InAs, Si, 8107.

English descriptors

KwdEn :
- Atom probe, Catalysts, Chemical composition, Indium arsenides, Investigation method, Laser pulse, Nanowires, Residual impurity, Semiconductor materials, Silicon.

Abstract

We report the composition analysis of single InAs and Si semiconductor nanowires using pulsed-laser atom probe tomography. The experimental conditions and sample geometries needed to realize 3-D composition mapping are described in detail. InAs mass spectra obtained using voltage pulses and laser pulses are compared, and are found to be superior for pulsed-laser evaporation. The ability to analyze intrinsic Si nanowires using pulsed laser evaporation is demonstrated. No peaks associated with the gold catalyst used were found in the InAs or the Si nanowire mass spectra.

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<author><name sortKey="Lensch, J L" uniqKey="Lensch J">J. L. Lensch</name>
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<author><name sortKey="May, S J" uniqKey="May S">S. J. May</name>
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<author><name sortKey="Wessels, B W" uniqKey="Wessels B">B. W. Wessels</name>
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<front><div type="abstract" xml:lang="en">We report the composition analysis of single InAs and Si semiconductor nanowires using pulsed-laser atom probe tomography. The experimental conditions and sample geometries needed to realize 3-D composition mapping are described in detail. InAs mass spectra obtained using voltage pulses and laser pulses are compared, and are found to be superior for pulsed-laser evaporation. The ability to analyze intrinsic Si nanowires using pulsed laser evaporation is demonstrated. No peaks associated with the gold catalyst used were found in the InAs or the Si nanowire mass spectra.</div>
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Composition analysis of single semiconductor nanowires using pulsed-laser atom probe tomography : Semiconductor nanowires

Composition analysis of single semiconductor nanowires using pulsed-laser atom probe tomography : Semiconductor nanowires

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

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