Integration of components in a 50-nm pseudomorphic In0.65Ga0.35As-In0.40Al0.60As-InP HEMT MMIC technology
Identifieur interne : 008973 ( Main/Repository ); précédent : 008972; suivant : 008974Integration of components in a 50-nm pseudomorphic In0.65Ga0.35As-In0.40Al0.60As-InP HEMT MMIC technology
Auteurs : RBID : Pascal:06-0404447Descripteurs français
- Pascal (Inist)
- Transistor mobilité électron élevée, Circuit MMIC, Composant actif, Composant passif, Transistor pseudomorphique, Dispositif MIM, Condensateur, Structure MIM, Résistance couche mince, Transconductance, Tension drain, Source tension, Gain courant, Fréquence coupure, Gain puissance, Composant microbande, Amplificateur large bande, Amplificateur réaction, Figure bruit, Large bande, Indium phosphure, Composé binaire, Tantale nitrure, Silicium nitrure, In P, InP, Pm, N Ta, TaN, N Si, Si3N4.
English descriptors
- KwdEn :
- Active component, Binary compound, Capacitor, Current gain, Cut off frequency, Drain voltage, High electron mobility transistor, Indium phosphide, MIM devices, MIM structure, MMIC, Microstrip components, Noise figure, Passive component, Power gain, Pseudomorphic transistor, Reaction amplifier, Silicon nitride, Tantalum nitride, Thin film resistor, Transconductance, Voltage source, Wide band, Wideband amplifiers.
Abstract
The basic active and passive elements for a 50-nm InGaAs-InAlAs-InP HEMT process with pseudomorphic InGaAs channel have been designed and realized. InP HEMTs with 50-nm gate length, metal-insulator-metal (MIM) capacitors and thin film resistors (TFRs) have been designed and fabricated. A 2 x 15 pm HEMT showed an extrinsic peak transconductance of 1130 mS/mm at a drain-source voltage of 2.0 V. A 2 x 35 μm HEMT exhibited a current gain cut-off frequency of 200 GHz and a power gain cut-off frequency of 310 GHz at a drain-source voltage of 1.1 V. Passive device results included 85 Ω/□ tantalum nitride TFRs and 300 pF/mm2 Si3N4 MIM capacitors. The integration of the components in a microstrip-based monolithic microwave integrated circuit (MMIC) process has been demonstrated by designing, processing and testing of a wideband resistive feedback amplifier.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Integration of components in a 50-nm pseudomorphic In<sub>0.65</sub>Ga<sub>0.35</sub>As-In<sub>0.40</sub>Al<sub>0.60</sub>As-InP HEMT MMIC technology</title><author><name sortKey="Malmkvist, Mikael" uniqKey="Malmkvist M">Mikael Malmkvist</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Chalmers University of Technology, Department of Microtechnology and Nanoscience</s1><s2>412 96 Cöteborg</s2><s3>SWE</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Suède</country><wicri:noRegion>412 96 Cöteborg</wicri:noRegion></affiliation></author><author><name sortKey="Mellberg, Anders" uniqKey="Mellberg A">Anders Mellberg</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Chalmers University of Technology, Department of Microtechnology and Nanoscience</s1><s2>412 96 Cöteborg</s2><s3>SWE</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Suède</country><wicri:noRegion>412 96 Cöteborg</wicri:noRegion></affiliation></author><author><name sortKey="Rorsman, Niklas" uniqKey="Rorsman N">Niklas Rorsman</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Chalmers University of Technology, Department of Microtechnology and Nanoscience</s1><s2>412 96 Cöteborg</s2><s3>SWE</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Suède</country><wicri:noRegion>412 96 Cöteborg</wicri:noRegion></affiliation></author><author><name sortKey="Zirath, Herbert" uniqKey="Zirath H">Herbert Zirath</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Chalmers University of Technology, Department of Microtechnology and Nanoscience</s1><s2>412 96 Cöteborg</s2><s3>SWE</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Suède</country><wicri:noRegion>412 96 Cöteborg</wicri:noRegion></affiliation></author><author><name sortKey="Grahn, Jan" uniqKey="Grahn J">Jan Grahn</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Chalmers University of Technology, Department of Microtechnology and Nanoscience</s1><s2>412 96 Cöteborg</s2><s3>SWE</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Suède</country><wicri:noRegion>412 96 Cöteborg</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">06-0404447</idno><date when="2006">2006</date><idno type="stanalyst">PASCAL 06-0404447 INIST</idno><idno type="RBID">Pascal:06-0404447</idno><idno type="wicri:Area/Main/Corpus">008A39</idno><idno type="wicri:Area/Main/Repository">008973</idno></publicationStmt><seriesStmt><idno type="ISSN">0038-1101</idno><title level="j" type="abbreviated">Solid-state electron.</title><title level="j" type="main">Solid-state electronics</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Active component</term><term>Binary compound</term><term>Capacitor</term><term>Current gain</term><term>Cut off frequency</term><term>Drain voltage</term><term>High electron mobility transistor</term><term>Indium phosphide</term><term>MIM devices</term><term>MIM structure</term><term>MMIC</term><term>Microstrip components</term><term>Noise figure</term><term>Passive component</term><term>Power gain</term><term>Pseudomorphic transistor</term><term>Reaction amplifier</term><term>Silicon nitride</term><term>Tantalum nitride</term><term>Thin film resistor</term><term>Transconductance</term><term>Voltage source</term><term>Wide band</term><term>Wideband amplifiers</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Transistor mobilité électron élevée</term><term>Circuit MMIC</term><term>Composant actif</term><term>Composant passif</term><term>Transistor pseudomorphique</term><term>Dispositif MIM</term><term>Condensateur</term><term>Structure MIM</term><term>Résistance couche mince</term><term>Transconductance</term><term>Tension drain</term><term>Source tension</term><term>Gain courant</term><term>Fréquence coupure</term><term>Gain puissance</term><term>Composant microbande</term><term>Amplificateur large bande</term><term>Amplificateur réaction</term><term>Figure bruit</term><term>Large bande</term><term>Indium phosphure</term><term>Composé binaire</term><term>Tantale nitrure</term><term>Silicium nitrure</term><term>In P</term><term>InP</term><term>Pm</term><term>N Ta</term><term>TaN</term><term>N Si</term><term>Si3N4</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The basic active and passive elements for a 50-nm InGaAs-InAlAs-InP HEMT process with pseudomorphic InGaAs channel have been designed and realized. InP HEMTs with 50-nm gate length, metal-insulator-metal (MIM) capacitors and thin film resistors (TFRs) have been designed and fabricated. A 2 x 15 pm HEMT showed an extrinsic peak transconductance of 1130 mS/mm at a drain-source voltage of 2.0 V. A 2 x 35 μm HEMT exhibited a current gain cut-off frequency of 200 GHz and a power gain cut-off frequency of 310 GHz at a drain-source voltage of 1.1 V. Passive device results included 85 Ω/□ tantalum nitride TFRs and 300 pF/mm<sup>2</sup> Si<sub>3</sub>N<sub>4</sub> MIM capacitors. The integration of the components in a microstrip-based monolithic microwave integrated circuit (MMIC) process has been demonstrated by designing, processing and testing of a wideband resistive feedback amplifier.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0038-1101</s0></fA01><fA03 i2="1"><s0>Solid-state electron.</s0></fA03><fA05><s2>50</s2></fA05><fA06><s2>5</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Integration of components in a 50-nm pseudomorphic In<sub>0.65</sub>Ga<sub>0.35</sub>As-In<sub>0.40</sub>Al<sub>0.60</sub>As-InP HEMT MMIC technology</s1></fA08><fA11 i1="01" i2="1"><s1>MALMKVIST (Mikael)</s1></fA11><fA11 i1="02" i2="1"><s1>MELLBERG (Anders)</s1></fA11><fA11 i1="03" i2="1"><s1>RORSMAN (Niklas)</s1></fA11><fA11 i1="04" i2="1"><s1>ZIRATH (Herbert)</s1></fA11><fA11 i1="05" i2="1"><s1>GRAHN (Jan)</s1></fA11><fA14 i1="01"><s1>Chalmers University of Technology, Department of Microtechnology and Nanoscience</s1><s2>412 96 Cöteborg</s2><s3>SWE</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></fA14><fA20><s1>858-864</s1></fA20><fA21><s1>2006</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>2888</s2><s5>354000115726590220</s5></fA43><fA44><s0>0000</s0><s1>© 2006 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>28 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>06-0404447</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Solid-state electronics</s0></fA64><fA66 i1="01"><s0>GBR</s0></fA66><fC01 i1="01" l="ENG"><s0>The basic active and passive elements for a 50-nm InGaAs-InAlAs-InP HEMT process with pseudomorphic InGaAs channel have been designed and realized. InP HEMTs with 50-nm gate length, metal-insulator-metal (MIM) capacitors and thin film resistors (TFRs) have been designed and fabricated. A 2 x 15 pm HEMT showed an extrinsic peak transconductance of 1130 mS/mm at a drain-source voltage of 2.0 V. A 2 x 35 μm HEMT exhibited a current gain cut-off frequency of 200 GHz and a power gain cut-off frequency of 310 GHz at a drain-source voltage of 1.1 V. Passive device results included 85 Ω/□ tantalum nitride TFRs and 300 pF/mm<sup>2</sup> Si<sub>3</sub>N<sub>4</sub> MIM capacitors. The integration of the components in a microstrip-based monolithic microwave integrated circuit (MMIC) process has been demonstrated by designing, processing and testing of a wideband resistive feedback amplifier.</s0></fC01><fC02 i1="01" i2="X"><s0>001D03F04</s0></fC02><fC02 i1="02" i2="X"><s0>001D03G02B</s0></fC02><fC02 i1="03" i2="X"><s0>001D03D</s0></fC02><fC02 i1="04" i2="X"><s0>001D03F09</s0></fC02><fC03 i1="01" i2="X" l="FRE"><s0>Transistor mobilité électron élevée</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="ENG"><s0>High electron mobility transistor</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="SPA"><s0>Transistor movibilidad elevada electrones</s0><s5>01</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Circuit MMIC</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>MMIC</s0><s5>02</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Composant actif</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>Active component</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="SPA"><s0>Componente 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