IndiumV3, Main, Repository, bibRecord, 008486

Resist-assisted atom lithography with group III elements

Identifieur interne : 008486 ( Main/Repository ); précédent : 008485; suivant : 008487

Resist-assisted atom lithography with group III elements

Auteurs : RBID : Pascal:07-0027726

Descripteurs français

Pascal (Inist)
- Faisceau atomique, Lithographie, Méthode optique, Etude expérimentale, Couche autoassemblée, Couche monomoléculaire, Composé organique, Gallium, Indium, Thiol, Nonanethiol, 4282C, 0777G.

English descriptors

KwdEn :
- Atomic beam, Experimental study, Gallium, Indium, Lithography, Monolayer, Optical method, Organic compounds, Self-assembled layer, Thiol.

Abstract

Resist-assisted atom lithography with group III elements, specifically with gallium and indium, is demonstrated. Self-assembled monolayers (SAM) of nonanethiols prepared on thin sputtered gold films were exposed to a beam of neutral gallium and indium atoms through a physical mask. The interaction of the Ga and In atoms with the nonanethiol layer, followed by a wet etching process, creates well defined structures on the gold film, with features below 100 nm. The threshold of the lithographic process was estimated by optical methods and found to be around 3 gallium atoms and 12 indium atoms per thiol molecule. Our experiments suggest that resist-assisted atom lithography can be realized with group III elements and possibly extended to new neutral atomic species.

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Pascal:07-0027726

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<s2>56127 Pisa</s2>
<s3>ITA</s3>
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<wicri:noRegion>56127 Pisa</wicri:noRegion>
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<author><name sortKey="Marago, O M" uniqKey="Marago O">O. M. Marago</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>CNR-Istituto per i Processi Chimico-Fisici sez. Messina, via La Farina 237</s1>
<s2>98123 Messina</s2>
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<term>Indium</term>
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<term>Monolayer</term>
<term>Optical method</term>
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<term>Etude expérimentale</term>
<term>Couche autoassemblée</term>
<term>Couche monomoléculaire</term>
<term>Composé organique</term>
<term>Gallium</term>
<term>Indium</term>
<term>Thiol</term>
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<term>4282C</term>
<term>0777G</term>
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<front><div type="abstract" xml:lang="en">Resist-assisted atom lithography with group III elements, specifically with gallium and indium, is demonstrated. Self-assembled monolayers (SAM) of nonanethiols prepared on thin sputtered gold films were exposed to a beam of neutral gallium and indium atoms through a physical mask. The interaction of the Ga and In atoms with the nonanethiol layer, followed by a wet etching process, creates well defined structures on the gold film, with features below 100 nm. The threshold of the lithographic process was estimated by optical methods and found to be around 3 gallium atoms and 12 indium atoms per thiol molecule. Our experiments suggest that resist-assisted atom lithography can be realized with group III elements and possibly extended to new neutral atomic species.</div>
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<fC01 i1="01" l="ENG"><s0>Resist-assisted atom lithography with group III elements, specifically with gallium and indium, is demonstrated. Self-assembled monolayers (SAM) of nonanethiols prepared on thin sputtered gold films were exposed to a beam of neutral gallium and indium atoms through a physical mask. The interaction of the Ga and In atoms with the nonanethiol layer, followed by a wet etching process, creates well defined structures on the gold film, with features below 100 nm. The threshold of the lithographic process was estimated by optical methods and found to be around 3 gallium atoms and 12 indium atoms per thiol molecule. Our experiments suggest that resist-assisted atom lithography can be realized with group III elements and possibly extended to new neutral atomic species.</s0>
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<s2>NC</s2>
<s2>FX</s2>
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<s5>63</s5>
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<s5>63</s5>
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<s4>INC</s4>
<s5>71</s5>
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<s4>INC</s4>
<s5>83</s5>
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<fC03 i1="13" i2="X" l="FRE"><s0>0777G</s0>
<s4>INC</s4>
<s5>84</s5>
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<fN21><s1>015</s1>
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Resist-assisted atom lithography with group III elements

Resist-assisted atom lithography with group III elements

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

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