A Monolithic MQW InP-InGaAsP-Based Optical Comb Generator
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Auteurs : RBID : Pascal:08-0045500Descripteurs français
- Pascal (Inist)
- Effet Stark, Modulation intensité, Bruit phase, Laser semiconducteur, Diode laser, Etude expérimentale, Fréquence optique, Indice réfraction, Puissance sortie, Largeur raie, Puits quantique multiple, Puits quantique, Composé binaire, Phosphure d'indium, Semiconducteur III-V, Composé quaternaire, Arséniure de gallium, Arséniure d'indium, Phosphure de gallium, InGaAsP, In P, As Ga In P, InP, 4255P.
English descriptors
- KwdEn :
- Binary compounds, Experimental study, Gallium arsenides, Gallium phosphide, III-V semiconductors, Indium arsenides, Indium phosphide, Intensity modulation, Laser diodes, Line widths, Multiple quantum well, Optical frequency, Output power, Phase noise, Quantum wells, Quaternary compounds, Refractive index, Semiconductor lasers, Stark effect.
Abstract
We report the first demonstration of a monolithic optical-frequency comb generator. The device is based on multi-section quaternary/quaternary eight-quantum-well InP-InGaAsP material in a frequency-modulated (FM) laser design. The modulation is generated using quantum-confined Stark-effect phase-induced refractive index modulation to achieve fast modulation up to 24.4 GHz. The laser was fabricated using a single epitaxial growth step and quantum-well intermixing to realize low-loss phase adjustment and modulation sections. The output was quasicontinuous wave with intensity modulation at less than 20% for a total output power of 2 mW. The linewidth of each line was limited by the linewidth of the free running laser at an optimum of 25 MHz full-width at half-maximum. The comb generator produces a number of lines with a spacing exactly equal to the modulation frequency (or a multiple of it), differential phase noise between adjacent lines of -82 dBc/Hz at 1-kHz offset (modulation source-limited), and a potential comb spectrum width of up to 2 THz (15 nm), though the comb spectrum was not continuous across the full span.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">A Monolithic MQW InP-InGaAsP-Based Optical Comb Generator</title><author><name sortKey="Renaud, Cyril C" uniqKey="Renaud C">Cyril C. Renaud</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Electronic and Electrical Engineering, University College London</s1><s2>London WC1E 7JE</s2><s3>GBR</s3><sZ>1 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>Royaume-Uni</country><wicri:noRegion>London WC1E 7JE</wicri:noRegion></affiliation></author><author><name sortKey="Pantouvaki, Marianna" uniqKey="Pantouvaki M">Marianna Pantouvaki</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>IMEC</s1><s2>3001 Leuven</s2><s3>BEL</s3><sZ>2 aut.</sZ></inist:fA14><country>Belgique</country><wicri:noRegion>IMEC</wicri:noRegion></affiliation></author><author><name sortKey="Gregoire, Sylvie" uniqKey="Gregoire S">Sylvie Gregoire</name><affiliation wicri:level="3"><inist:fA14 i1="03"><s1>École National Supérieure de Télécommunication</s1><s2>CS 83818-29238 Brest</s2><s3>FRA</s3><sZ>3 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Provence-Alpes-Côte d'Azur</region><settlement type="city">Brest</settlement></placeName></affiliation></author><author><name sortKey="Lealman, Ian" uniqKey="Lealman I">Ian Lealman</name><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Centre for Integrated Photonics</s1><s2>Ipswich IP5 3RE</s2><s3>GBR</s3><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Royaume-Uni</country><wicri:noRegion>Centre for Integrated Photonics</wicri:noRegion></affiliation></author><author><name sortKey="Cannard, Paul" uniqKey="Cannard P">Paul Cannard</name><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Centre for Integrated Photonics</s1><s2>Ipswich IP5 3RE</s2><s3>GBR</s3><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Royaume-Uni</country><wicri:noRegion>Centre for Integrated Photonics</wicri:noRegion></affiliation></author><author><name sortKey="Cole, Simon" uniqKey="Cole S">Simon Cole</name><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Centre for Integrated Photonics</s1><s2>Ipswich IP5 3RE</s2><s3>GBR</s3><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Royaume-Uni</country><wicri:noRegion>Centre for Integrated Photonics</wicri:noRegion></affiliation></author><author><name sortKey="Moore, Ron" uniqKey="Moore R">Ron Moore</name><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Centre for Integrated Photonics</s1><s2>Ipswich IP5 3RE</s2><s3>GBR</s3><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Royaume-Uni</country><wicri:noRegion>Centre for Integrated Photonics</wicri:noRegion></affiliation></author><author><name sortKey="Gwilliam, Russell" uniqKey="Gwilliam R">Russell Gwilliam</name><affiliation wicri:level="1"><inist:fA14 i1="05"><s1>Ion Beam Centre, University of Surrey</s1><s2>Guildford GU2 7RX</s2><s3>GBR</s3><sZ>8 aut.</sZ></inist:fA14><country>Royaume-Uni</country><wicri:noRegion>Guildford GU2 7RX</wicri:noRegion></affiliation></author><author><name sortKey="Seeds, Alwyn J" uniqKey="Seeds A">Alwyn J. Seeds</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Electronic and Electrical Engineering, University College London</s1><s2>London WC1E 7JE</s2><s3>GBR</s3><sZ>1 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>Royaume-Uni</country><wicri:noRegion>London WC1E 7JE</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">08-0045500</idno><date when="2007">2007</date><idno type="stanalyst">PASCAL 08-0045500 INIST</idno><idno type="RBID">Pascal:08-0045500</idno><idno type="wicri:Area/Main/Corpus">007010</idno><idno type="wicri:Area/Main/Repository">007F92</idno></publicationStmt><seriesStmt><idno type="ISSN">0018-9197</idno><title level="j" type="abbreviated">IEEE j. quantum electron.</title><title level="j" type="main">IEEE journal of quantum electronics</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Binary compounds</term><term>Experimental study</term><term>Gallium arsenides</term><term>Gallium phosphide</term><term>III-V semiconductors</term><term>Indium arsenides</term><term>Indium phosphide</term><term>Intensity modulation</term><term>Laser diodes</term><term>Line widths</term><term>Multiple quantum well</term><term>Optical frequency</term><term>Output power</term><term>Phase noise</term><term>Quantum wells</term><term>Quaternary compounds</term><term>Refractive index</term><term>Semiconductor lasers</term><term>Stark effect</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Effet Stark</term><term>Modulation intensité</term><term>Bruit phase</term><term>Laser semiconducteur</term><term>Diode laser</term><term>Etude expérimentale</term><term>Fréquence optique</term><term>Indice réfraction</term><term>Puissance sortie</term><term>Largeur raie</term><term>Puits quantique multiple</term><term>Puits quantique</term><term>Composé binaire</term><term>Phosphure d'indium</term><term>Semiconducteur III-V</term><term>Composé quaternaire</term><term>Arséniure de gallium</term><term>Arséniure d'indium</term><term>Phosphure de gallium</term><term>InGaAsP</term><term>In P</term><term>As Ga In P</term><term>InP</term><term>4255P</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We report the first demonstration of a monolithic optical-frequency comb generator. The device is based on multi-section quaternary/quaternary eight-quantum-well InP-InGaAsP material in a frequency-modulated (FM) laser design. The modulation is generated using quantum-confined Stark-effect phase-induced refractive index modulation to achieve fast modulation up to 24.4 GHz. The laser was fabricated using a single epitaxial growth step and quantum-well intermixing to realize low-loss phase adjustment and modulation sections. The output was quasicontinuous wave with intensity modulation at less than 20% for a total output power of 2 mW. The linewidth of each line was limited by the linewidth of the free running laser at an optimum of 25 MHz full-width at half-maximum. The comb generator produces a number of lines with a spacing exactly equal to the modulation frequency (or a multiple of it), differential phase noise between adjacent lines of -82 dBc/Hz at 1-kHz offset (modulation source-limited), and a potential comb spectrum width of up to 2 THz (15 nm), though the comb spectrum was not continuous across the full span.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0018-9197</s0></fA01><fA02 i1="01"><s0>IEJQA7</s0></fA02><fA03 i2="1"><s0>IEEE j. quantum electron.</s0></fA03><fA05><s2>43</s2></fA05><fA06><s2>11-12</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>A Monolithic MQW InP-InGaAsP-Based Optical Comb Generator</s1></fA08><fA11 i1="01" i2="1"><s1>RENAUD (Cyril C.)</s1></fA11><fA11 i1="02" i2="1"><s1>PANTOUVAKI (Marianna)</s1></fA11><fA11 i1="03" i2="1"><s1>GREGOIRE (Sylvie)</s1></fA11><fA11 i1="04" i2="1"><s1>LEALMAN (Ian)</s1></fA11><fA11 i1="05" i2="1"><s1>CANNARD (Paul)</s1></fA11><fA11 i1="06" i2="1"><s1>COLE (Simon)</s1></fA11><fA11 i1="07" i2="1"><s1>MOORE (Ron)</s1></fA11><fA11 i1="08" i2="1"><s1>GWILLIAM (Russell)</s1></fA11><fA11 i1="09" i2="1"><s1>SEEDS (Alwyn J.)</s1></fA11><fA14 i1="01"><s1>Department of Electronic and Electrical Engineering, University College London</s1><s2>London WC1E 7JE</s2><s3>GBR</s3><sZ>1 aut.</sZ><sZ>9 aut.</sZ></fA14><fA14 i1="02"><s1>IMEC</s1><s2>3001 Leuven</s2><s3>BEL</s3><sZ>2 aut.</sZ></fA14><fA14 i1="03"><s1>École National Supérieure de Télécommunication</s1><s2>CS 83818-29238 Brest</s2><s3>FRA</s3><sZ>3 aut.</sZ></fA14><fA14 i1="04"><s1>Centre for Integrated Photonics</s1><s2>Ipswich IP5 3RE</s2><s3>GBR</s3><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></fA14><fA14 i1="05"><s1>Ion Beam Centre, University of Surrey</s1><s2>Guildford GU2 7RX</s2><s3>GBR</s3><sZ>8 aut.</sZ></fA14><fA20><s1>998-1005</s1></fA20><fA21><s1>2007</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>222K</s2><s5>354000174441920050</s5></fA43><fA44><s0>0000</s0><s1>© 2008 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>28 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>08-0045500</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>IEEE journal of quantum electronics</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>We report the first demonstration of a monolithic optical-frequency comb generator. The device is based on multi-section quaternary/quaternary eight-quantum-well InP-InGaAsP material in a frequency-modulated (FM) laser design. The modulation is generated using quantum-confined Stark-effect phase-induced refractive index modulation to achieve fast modulation up to 24.4 GHz. The laser was fabricated using a single epitaxial growth step and quantum-well intermixing to realize low-loss phase adjustment and modulation sections. The output was quasicontinuous wave with intensity modulation at less than 20% for a total output power of 2 mW. The linewidth of each line was limited by the linewidth of the free running laser at an optimum of 25 MHz full-width at half-maximum. The comb generator produces a number of lines with a spacing exactly equal to the modulation frequency (or a multiple of it), differential phase noise between adjacent lines of -82 dBc/Hz at 1-kHz offset (modulation source-limited), and a potential comb spectrum width of up to 2 THz (15 nm), though the comb spectrum was not continuous across the full span.</s0></fC01><fC02 i1="01" i2="3"><s0>001B40B55P</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Effet Stark</s0><s5>03</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Stark effect</s0><s5>03</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Modulation intensité</s0><s5>04</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Intensity modulation</s0><s5>04</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Bruit phase</s0><s5>05</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Phase noise</s0><s5>05</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Laser semiconducteur</s0><s5>09</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Semiconductor lasers</s0><s5>09</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Diode laser</s0><s5>11</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Laser diodes</s0><s5>11</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Etude expérimentale</s0><s5>30</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Experimental study</s0><s5>30</s5></fC03><fC03 i1="07" i2="X" l="FRE"><s0>Fréquence optique</s0><s5>41</s5></fC03><fC03 i1="07" i2="X" l="ENG"><s0>Optical frequency</s0><s5>41</s5></fC03><fC03 i1="07" i2="X" l="SPA"><s0>Frecuencia óptica</s0><s5>41</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Indice réfraction</s0><s5>42</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Refractive index</s0><s5>42</s5></fC03><fC03 i1="09" i2="X" l="FRE"><s0>Puissance sortie</s0><s5>43</s5></fC03><fC03 i1="09" i2="X" l="ENG"><s0>Output power</s0><s5>43</s5></fC03><fC03 i1="09" i2="X" l="SPA"><s0>Potencia salida</s0><s5>43</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Largeur raie</s0><s5>44</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Line widths</s0><s5>44</s5></fC03><fC03 i1="11" i2="X" l="FRE"><s0>Puits quantique multiple</s0><s5>47</s5></fC03><fC03 i1="11" i2="X" l="ENG"><s0>Multiple quantum well</s0><s5>47</s5></fC03><fC03 i1="11" i2="X" l="SPA"><s0>Pozo cuántico múltiple</s0><s5>47</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Puits quantique</s0><s5>48</s5></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Quantum wells</s0><s5>48</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Composé binaire</s0><s5>50</s5></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Binary compounds</s0><s5>50</s5></fC03><fC03 i1="14" i2="X" l="FRE"><s0>Phosphure d'indium</s0><s5>51</s5></fC03><fC03 i1="14" i2="X" l="ENG"><s0>Indium phosphide</s0><s5>51</s5></fC03><fC03 i1="14" i2="X" l="SPA"><s0>Indio fosfuro</s0><s5>51</s5></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Semiconducteur III-V</s0><s5>52</s5></fC03><fC03 i1="15" i2="3" l="ENG"><s0>III-V semiconductors</s0><s5>52</s5></fC03><fC03 i1="16" i2="3" l="FRE"><s0>Composé quaternaire</s0><s5>53</s5></fC03><fC03 i1="16" i2="3" l="ENG"><s0>Quaternary compounds</s0><s5>53</s5></fC03><fC03 i1="17" i2="3" l="FRE"><s0>Arséniure de gallium</s0><s2>NK</s2><s5>54</s5></fC03><fC03 i1="17" i2="3" l="ENG"><s0>Gallium arsenides</s0><s2>NK</s2><s5>54</s5></fC03><fC03 i1="18" i2="3" l="FRE"><s0>Arséniure d'indium</s0><s2>NK</s2><s5>55</s5></fC03><fC03 i1="18" i2="3" l="ENG"><s0>Indium arsenides</s0><s2>NK</s2><s5>55</s5></fC03><fC03 i1="19" i2="X" l="FRE"><s0>Phosphure de gallium</s0><s5>56</s5></fC03><fC03 i1="19" i2="X" l="ENG"><s0>Gallium phosphide</s0><s5>56</s5></fC03><fC03 i1="19" i2="X" l="SPA"><s0>Galio fosfuro</s0><s5>56</s5></fC03><fC03 i1="20" i2="3" l="FRE"><s0>InGaAsP</s0><s4>INC</s4><s5>71</s5></fC03><fC03 i1="21" i2="3" l="FRE"><s0>In P</s0><s4>INC</s4><s5>75</s5></fC03><fC03 i1="22" i2="3" l="FRE"><s0>As Ga In P</s0><s4>INC</s4><s5>76</s5></fC03><fC03 i1="23" i2="3" l="FRE"><s0>InP</s0><s4>INC</s4><s5>83</s5></fC03><fC03 i1="24" i2="3" l="FRE"><s0>4255P</s0><s4>INC</s4><s5>91</s5></fC03><fN21><s1>021</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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