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Effect of tin-doped indium oxide film as capping layer on the agglomeration of copper film and the appearance of copper silicide

Identifieur interne : 007B67 ( Main/Repository ); précédent : 007B66; suivant : 007B68

Effect of tin-doped indium oxide film as capping layer on the agglomeration of copper film and the appearance of copper silicide

Auteurs : RBID : Pascal:07-0234116

Descripteurs français

Pascal (Inist)
- Matériau dopé, Cuivre, Silicium, Pulvérisation irradiation, Recuit thermique rapide, Résistivité couche, Diffraction RX, Microscopie électronique balayage, Structure surface, Microscopie électronique transmission, Microstructure, Barrière diffusion, Défaillance, Métallisation, Indium oxyde, Etain oxyde, Capping, Cu, Cu Si, Cu3Si, Cuivre siliciure, 6855J, 7361.
Wicri :
- concept : Cuivre.

English descriptors

KwdEn :
- Capping, Copper, Copper silicides, Diffusion barriers, Doped materials, Failures, Indium oxides, Metallizing, Microstructure, Rapid thermal annealing, Scanning electron microscopy, Sheet resistivity, Silicon, Sputtering, Surface structure, Tin oxides, Transmission electron microscopy, XRD.

Abstract

In this work, the effect of tin-doped indium oxide (ITO) film as capping layer on the agglomeration of copper film and the appearance of copper silicide was studied. Both samples of Cu 100 nm/ITO 10 nm/Si and ITO 20 nm/Cu 100 nm/ITO 10 nm/Si were prepared by sputtering deposition. After annealing in a rapid thermal annealing (RTA) furnace at various temperatures for 5 min in vacuum, the samples were characterized by four probe measurement for sheet resistance, X-ray diffraction (XRD) analysis for phase identification, scanning electron microscopy (SEM) for surface morphology and transmission electron microscopy (TEM) for microstructure. The results show that the sample with ITO capping layer is a good diffusion barrier between copper and silicon at least up to 750 °C, which is 100 °C higher than that of the sample without ITO capping layer. The failure temperature of the sample with ITO capping layer is about 800 °C, which is 100 °C higher than that of the sample without ITO capping layer. The ITO capping layer on Cu/ITO/Si can obstacle the agglomeration of copper film and the appearance of Cu₃Si phase.

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Pascal:07-0234116

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Effect of tin-doped indium oxide film as capping layer on the agglomeration of copper film and the appearance of copper silicide</title>
<author><name sortKey="Liu, W L" uniqKey="Liu W">W. L. Liu</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Materials Science and Engineering, National formosa University</s1>
<s2>Huwei, Yunlin 632</s2>
<s3>TWN</s3>
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<country>Taïwan</country>
<wicri:noRegion>Huwei, Yunlin 632</wicri:noRegion>
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<author><name sortKey="Chen, W J" uniqKey="Chen W">W. J. Chen</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Graduate Institute of Materials Engineering, National Pingtung University of Science and Technology</s1>
<s2>Neipu, Pingtung 912</s2>
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<country>Taïwan</country>
<wicri:noRegion>Neipu, Pingtung 912</wicri:noRegion>
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</author>
<author><name sortKey="Tsai, T K" uniqKey="Tsai T">T. K. Tsai</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Materials Science and Engineering, National formosa University</s1>
<s2>Huwei, Yunlin 632</s2>
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<country>Taïwan</country>
<wicri:noRegion>Huwei, Yunlin 632</wicri:noRegion>
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<author><name sortKey="Hsieh, S H" uniqKey="Hsieh S">S. H. Hsieh</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Materials Science and Engineering, National formosa University</s1>
<s2>Huwei, Yunlin 632</s2>
<s3>TWN</s3>
<sZ>1 aut.</sZ>
<sZ>3 aut.</sZ>
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<country>Taïwan</country>
<wicri:noRegion>Huwei, Yunlin 632</wicri:noRegion>
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</author>
<author><name sortKey="Liu, C M" uniqKey="Liu C">C. M. Liu</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Materials Science and Engineering, National formosa University</s1>
<s2>Huwei, Yunlin 632</s2>
<s3>TWN</s3>
<sZ>1 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
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<country>Taïwan</country>
<wicri:noRegion>Huwei, Yunlin 632</wicri:noRegion>
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</author>
</titleStmt>
<publicationStmt><idno type="inist">07-0234116</idno>
<date when="2007">2007</date>
<idno type="stanalyst">PASCAL 07-0234116 INIST</idno>
<idno type="RBID">Pascal:07-0234116</idno>
<idno type="wicri:Area/Main/Corpus">007E93</idno>
<idno type="wicri:Area/Main/Repository">007B67</idno>
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<seriesStmt><idno type="ISSN">0169-4332</idno>
<title level="j" type="abbreviated">Appl. surf. sci.</title>
<title level="j" type="main">Applied surface science</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Capping</term>
<term>Copper</term>
<term>Copper silicides</term>
<term>Diffusion barriers</term>
<term>Doped materials</term>
<term>Failures</term>
<term>Indium oxides</term>
<term>Metallizing</term>
<term>Microstructure</term>
<term>Rapid thermal annealing</term>
<term>Scanning electron microscopy</term>
<term>Sheet resistivity</term>
<term>Silicon</term>
<term>Sputtering</term>
<term>Surface structure</term>
<term>Tin oxides</term>
<term>Transmission electron microscopy</term>
<term>XRD</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Matériau dopé</term>
<term>Cuivre</term>
<term>Silicium</term>
<term>Pulvérisation irradiation</term>
<term>Recuit thermique rapide</term>
<term>Résistivité couche</term>
<term>Diffraction RX</term>
<term>Microscopie électronique balayage</term>
<term>Structure surface</term>
<term>Microscopie électronique transmission</term>
<term>Microstructure</term>
<term>Barrière diffusion</term>
<term>Défaillance</term>
<term>Métallisation</term>
<term>Indium oxyde</term>
<term>Etain oxyde</term>
<term>Capping</term>
<term>Cu</term>
<term>Cu Si</term>
<term>Cu3Si</term>
<term>Cuivre siliciure</term>
<term>6855J</term>
<term>7361</term>
</keywords>
<keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Cuivre</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">In this work, the effect of tin-doped indium oxide (ITO) film as capping layer on the agglomeration of copper film and the appearance of copper silicide was studied. Both samples of Cu 100 nm/ITO 10 nm/Si and ITO 20 nm/Cu 100 nm/ITO 10 nm/Si were prepared by sputtering deposition. After annealing in a rapid thermal annealing (RTA) furnace at various temperatures for 5 min in vacuum, the samples were characterized by four probe measurement for sheet resistance, X-ray diffraction (XRD) analysis for phase identification, scanning electron microscopy (SEM) for surface morphology and transmission electron microscopy (TEM) for microstructure. The results show that the sample with ITO capping layer is a good diffusion barrier between copper and silicon at least up to 750 °C, which is 100 °C higher than that of the sample without ITO capping layer. The failure temperature of the sample with ITO capping layer is about 800 °C, which is 100 °C higher than that of the sample without ITO capping layer. The ITO capping layer on Cu/ITO/Si can obstacle the agglomeration of copper film and the appearance of Cu<sub>3</sub>
Si phase.</div>
</front>
</TEI>
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<fA06><s2>12</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG"><s1>Effect of tin-doped indium oxide film as capping layer on the agglomeration of copper film and the appearance of copper silicide</s1>
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<fA11 i1="01" i2="1"><s1>LIU (W. L.)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>CHEN (W. J.)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>TSAI (T. K.)</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>HSIEH (S. H.)</s1>
</fA11>
<fA11 i1="05" i2="1"><s1>LIU (C. M.)</s1>
</fA11>
<fA14 i1="01"><s1>Department of Materials Science and Engineering, National formosa University</s1>
<s2>Huwei, Yunlin 632</s2>
<s3>TWN</s3>
<sZ>1 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>Graduate Institute of Materials Engineering, National Pingtung University of Science and Technology</s1>
<s2>Neipu, Pingtung 912</s2>
<s3>TWN</s3>
<sZ>2 aut.</sZ>
</fA14>
<fA20><s1>5516-5520</s1>
</fA20>
<fA21><s1>2007</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>16002</s2>
<s5>354000145642990550</s5>
</fA43>
<fA44><s0>0000</s0>
<s1>© 2007 INIST-CNRS. All rights reserved.</s1>
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<fA45><s0>27 ref.</s0>
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<fA47 i1="01" i2="1"><s0>07-0234116</s0>
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<fA60><s1>P</s1>
</fA60>
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</fA61>
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</fA64>
<fA66 i1="01"><s0>NLD</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>In this work, the effect of tin-doped indium oxide (ITO) film as capping layer on the agglomeration of copper film and the appearance of copper silicide was studied. Both samples of Cu 100 nm/ITO 10 nm/Si and ITO 20 nm/Cu 100 nm/ITO 10 nm/Si were prepared by sputtering deposition. After annealing in a rapid thermal annealing (RTA) furnace at various temperatures for 5 min in vacuum, the samples were characterized by four probe measurement for sheet resistance, X-ray diffraction (XRD) analysis for phase identification, scanning electron microscopy (SEM) for surface morphology and transmission electron microscopy (TEM) for microstructure. The results show that the sample with ITO capping layer is a good diffusion barrier between copper and silicon at least up to 750 °C, which is 100 °C higher than that of the sample without ITO capping layer. The failure temperature of the sample with ITO capping layer is about 800 °C, which is 100 °C higher than that of the sample without ITO capping layer. The ITO capping layer on Cu/ITO/Si can obstacle the agglomeration of copper film and the appearance of Cu<sub>3</sub>
Si phase.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B60H55J</s0>
</fC02>
<fC02 i1="02" i2="3"><s0>001B70C61</s0>
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<fC03 i1="01" i2="3" l="FRE"><s0>Matériau dopé</s0>
<s5>03</s5>
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<fC03 i1="01" i2="3" l="ENG"><s0>Doped materials</s0>
<s5>03</s5>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>Cuivre</s0>
<s2>NC</s2>
<s5>05</s5>
</fC03>
<fC03 i1="02" i2="3" l="ENG"><s0>Copper</s0>
<s2>NC</s2>
<s5>05</s5>
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<s2>NC</s2>
<s5>07</s5>
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<s5>08</s5>
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<s5>08</s5>
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<fC03 i1="05" i2="3" l="FRE"><s0>Recuit thermique rapide</s0>
<s5>09</s5>
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<fC03 i1="05" i2="3" l="ENG"><s0>Rapid thermal annealing</s0>
<s5>09</s5>
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<fC03 i1="06" i2="3" l="FRE"><s0>Résistivité couche</s0>
<s5>10</s5>
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<fC03 i1="06" i2="3" l="ENG"><s0>Sheet resistivity</s0>
<s5>10</s5>
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<s5>11</s5>
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<fC03 i1="07" i2="3" l="ENG"><s0>XRD</s0>
<s5>11</s5>
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<s5>14</s5>
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<s5>15</s5>
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<s5>15</s5>
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<s5>16</s5>
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<s5>16</s5>
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<s5>17</s5>
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<s5>17</s5>
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<s5>18</s5>
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<s5>18</s5>
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<s5>19</s5>
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<s5>19</s5>
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<s2>NK</s2>
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<s2>NK</s2>
<s5>20</s5>
</fC03>
<fC03 i1="16" i2="3" l="FRE"><s0>Etain oxyde</s0>
<s2>NK</s2>
<s5>21</s5>
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<fC03 i1="16" i2="3" l="ENG"><s0>Tin oxides</s0>
<s2>NK</s2>
<s5>21</s5>
</fC03>
<fC03 i1="17" i2="X" l="FRE"><s0>Capping</s0>
<s5>22</s5>
</fC03>
<fC03 i1="17" i2="X" l="ENG"><s0>Capping</s0>
<s5>22</s5>
</fC03>
<fC03 i1="17" i2="X" l="SPA"><s0>Capping</s0>
<s5>22</s5>
</fC03>
<fC03 i1="18" i2="3" l="FRE"><s0>Cu</s0>
<s4>INC</s4>
<s5>32</s5>
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<fC03 i1="19" i2="3" l="FRE"><s0>Cu Si</s0>
<s4>INC</s4>
<s5>33</s5>
</fC03>
<fC03 i1="20" i2="3" l="FRE"><s0>Cu3Si</s0>
<s4>INC</s4>
<s5>34</s5>
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<fC03 i1="21" i2="3" l="FRE"><s0>Cuivre siliciure</s0>
<s2>NK</s2>
<s5>41</s5>
</fC03>
<fC03 i1="21" i2="3" l="ENG"><s0>Copper silicides</s0>
<s2>NK</s2>
<s5>41</s5>
</fC03>
<fC03 i1="22" i2="3" l="FRE"><s0>6855J</s0>
<s2>PAC</s2>
<s4>INC</s4>
<s5>45</s5>
</fC03>
<fC03 i1="23" i2="3" l="FRE"><s0>7361</s0>
<s2>PAC</s2>
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<s5>46</s5>
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<s5>06</s5>
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<fN21><s1>162</s1>
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</pA>
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</inist>
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Effect of tin-doped indium oxide film as capping layer on the agglomeration of copper film and the appearance of copper silicide

Effect of tin-doped indium oxide film as capping layer on the agglomeration of copper film and the appearance of copper silicide

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri