Electron statistics and cluster formation in CdF2 semiconductors with DX-centers
Identifieur interne : 007A75 ( Main/Repository ); précédent : 007A74; suivant : 007A76Electron statistics and cluster formation in CdF2 semiconductors with DX-centers
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Abstract
Equilibrium statistical and nonequilibrium photo-induced distributions of electrons over the levels of CdF2:DX were studied as function of the temperature. Optical, conductivity, as well as 113Cd and 19F nuclear spin-lattice relaxation data were taken into consideration. The heights of the tunneling barriers separating deep and shallow states of bistable DX-centers formed in CdF2 by Ga and In dopants, as well as the ionization energy of the deep states were determined for both dopants. CdF2:Ga semiconductors proved to have very high degree of compensation by interstitial F-ions, K> 0.996. Most Ga ions are located in expanded ordered structures (clusters), and may form only shallow one-electron states. Features of these structures result in very narrow impurity band (<0.02eV) at Ga concentrations up to ∼1020cm-3, which is responsible for the CdF2:Ga 'free electron' conductivity. The remaining less than 1 % of all Ga ions are placed into the 'cluster free' regions of the crystal, and form DX-centers where each center can bind either one, or two electrons. In CdF2:In, an increase of In content up to ∼1019cm-3 and above results in cluster formation. In contrast with Ga, In ions in clusters form only deep, two-electron states. At high In-doping level (> 1 mol%), the concentration of DX-centers (located in the 'cluster free' regions of the crystal) is very small.
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semiconductors with DX-centers</title>
<author><name sortKey="Kazanskii, S A" uniqKey="Kazanskii S">S. A. Kazanskii</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>St. Petersburg State University of Information Technologies, Mechanics and Optics</s1>
<s2>St. Petersburg 197101</s2>
<s3>RUS</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
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<country>Russie</country>
<wicri:noRegion>St. Petersburg 197101</wicri:noRegion>
</affiliation>
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<author><name sortKey="Shcheulin, A S" uniqKey="Shcheulin A">A. S. Shcheulin</name>
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<s2>St. Petersburg 197101</s2>
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<country>Russie</country>
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<author><name sortKey="Ryskin, A I" uniqKey="Ryskin A">A. I. Ryskin</name>
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<author><name sortKey="Hilger, D" uniqKey="Hilger D">D. Hilger</name>
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<wicri:noRegion>Oregon State University</wicri:noRegion>
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<author><name sortKey="Warren, W W Jr" uniqKey="Warren W">W. W. Jr Warren</name>
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<term>Donor center</term>
<term>Doping</term>
<term>Electrical conductivity</term>
<term>Gallium additions</term>
<term>Indium additions</term>
<term>Ionization potential</term>
<term>Nuclear magnetic resonance</term>
<term>Optical spectrum</term>
<term>Semiconductor materials</term>
<term>Spin-lattice relaxation</term>
<term>Tunnel effect</term>
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<keywords scheme="Pascal" xml:lang="fr"><term>Centre donneur</term>
<term>Conductivité électrique</term>
<term>Résonance magnétique nucléaire</term>
<term>Relaxation spin réseau</term>
<term>Effet tunnel</term>
<term>Etat défaut</term>
<term>Dopage</term>
<term>Potentiel ionisation</term>
<term>Compensation</term>
<term>Addition gallium</term>
<term>Addition indium</term>
<term>Spectre optique</term>
<term>Fluorure de cadmium</term>
<term>Semiconducteur</term>
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<front><div type="abstract" xml:lang="en">Equilibrium statistical and nonequilibrium photo-induced distributions of electrons over the levels of CdF<sub>2</sub>
:DX were studied as function of the temperature. Optical, conductivity, as well as <sup>113</sup>
Cd and <sup>19</sup>
F nuclear spin-lattice relaxation data were taken into consideration. The heights of the tunneling barriers separating deep and shallow states of bistable DX-centers formed in CdF<sub>2</sub>
by Ga and In dopants, as well as the ionization energy of the deep states were determined for both dopants. CdF<sub>2</sub>
:Ga semiconductors proved to have very high degree of compensation by interstitial F<sup>-</sup>
ions, K> 0.996. Most Ga ions are located in expanded ordered structures (clusters), and may form only shallow one-electron states. Features of these structures result in very narrow impurity band (<0.02eV) at Ga concentrations up to ∼10<sup>20</sup>
cm<sup>-3</sup>
, which is responsible for the CdF<sub>2</sub>
:Ga 'free electron' conductivity. The remaining less than 1 % of all Ga ions are placed into the 'cluster free' regions of the crystal, and form DX-centers where each center can bind either one, or two electrons. In CdF<sub>2</sub>
:In, an increase of In content up to ∼10<sup>19</sup>
cm<sup>-3</sup>
and above results in cluster formation. In contrast with Ga, In ions in clusters form only deep, two-electron states. At high In-doping level (> 1 mol%), the concentration of DX-centers (located in the 'cluster free' regions of the crystal) is very small.</div>
</front>
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Cd and <sup>19</sup>
F nuclear spin-lattice relaxation data were taken into consideration. The heights of the tunneling barriers separating deep and shallow states of bistable DX-centers formed in CdF<sub>2</sub>
by Ga and In dopants, as well as the ionization energy of the deep states were determined for both dopants. CdF<sub>2</sub>
:Ga semiconductors proved to have very high degree of compensation by interstitial F<sup>-</sup>
ions, K> 0.996. Most Ga ions are located in expanded ordered structures (clusters), and may form only shallow one-electron states. Features of these structures result in very narrow impurity band (<0.02eV) at Ga concentrations up to ∼10<sup>20</sup>
cm<sup>-3</sup>
, which is responsible for the CdF<sub>2</sub>
:Ga 'free electron' conductivity. The remaining less than 1 % of all Ga ions are placed into the 'cluster free' regions of the crystal, and form DX-centers where each center can bind either one, or two electrons. In CdF<sub>2</sub>
:In, an increase of In content up to ∼10<sup>19</sup>
cm<sup>-3</sup>
and above results in cluster formation. In contrast with Ga, In ions in clusters form only deep, two-electron states. At high In-doping level (> 1 mol%), the concentration of DX-centers (located in the 'cluster free' regions of the crystal) is very small.</s0>
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