Effect of Bi addition on the electrical properties of a-Ge-Se-In thin films
Identifieur interne : 006971 ( Main/Repository ); précédent : 006970; suivant : 006972Effect of Bi addition on the electrical properties of a-Ge-Se-In thin films
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Abstract
This paper reports on the steady state and transient photoconductivity of Ge20Se70-xIn10Bix (x = 2, 4, 6, 8, 10) thermally evaporated thin films. The dark conductivity (σd) increases with the increase in the Bi content. The value of σd increases slowly from x = 2 to x = 6, but for x ≥ 8 the increase is quite abrupt. Photoconductivity (σph) also increases with the increase in the Bi content. The dark activation energy (ΔEd) decreases with the increase in the Bi content. There is a drop in the photosensitivity (σph/σd) of films with the increase in Bi addition. The result of the intensity dependent steady state photoconductivity (σph) follows the power law with intensity (F), i.e. σphαFγ where the value of y is close to 0.5, suggesting the predominance of bimolecular recombination in these materials. The rise and decay of photocurrent show the increase in the differential lifetime (τd), with the increase in the Bi content, indicating a delay in the recombination rate of photo-generated charge carriers. This change is governed by the photo-generated carriers trapped in the intrinsic defects or light induced defect creation through structural changes. One can therefore also expect that the density of states increases with the increase in the Bi content in amorphous thin films. The dispersion parameter (α) of the localized state energy distribution, determined from the decay curves, is also reported.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Effect of Bi addition on the electrical properties of a-Ge-Se-In thin films</title><author><name sortKey="Sharma, Ishu" uniqKey="Sharma I">Ishu Sharma</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics, Jaypee University of Information Technology, Waknaghat</s1><s2>Solan, H.R-173215</s2><s3>IND</s3><sZ>1 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Inde</country><wicri:noRegion>Solan, H.R-173215</wicri:noRegion></affiliation></author><author><name sortKey="Kumar, Akshay" uniqKey="Kumar A">Akshay Kumar</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Physics, Panjab University</s1><s2>Chandigarh</s2><s3>IND</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Inde</country><wicri:noRegion>Chandigarh</wicri:noRegion></affiliation></author><author><name sortKey="Tripathi, S K" uniqKey="Tripathi S">S. K. Tripathi</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Physics, Panjab University</s1><s2>Chandigarh</s2><s3>IND</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Inde</country><wicri:noRegion>Chandigarh</wicri:noRegion></affiliation></author><author><name sortKey="Barman, P B" uniqKey="Barman P">P. B. Barman</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics, Jaypee University of Information Technology, Waknaghat</s1><s2>Solan, H.R-173215</s2><s3>IND</s3><sZ>1 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Inde</country><wicri:noRegion>Solan, H.R-173215</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">08-0464443</idno><date when="2008">2008</date><idno type="stanalyst">PASCAL 08-0464443 INIST</idno><idno type="RBID">Pascal:08-0464443</idno><idno type="wicri:Area/Main/Corpus">006220</idno><idno type="wicri:Area/Main/Repository">006971</idno></publicationStmt><seriesStmt><idno type="ISSN">0022-3727</idno><title level="j" type="abbreviated">J. phys., D. Appl. phys. : (Print)</title><title level="j" type="main">Journal of physics. D, Applied physics : (Print)</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Activation energy</term><term>Amorphous state</term><term>Bismuth Indium Germanium Selenides Mixed</term><term>Charge carrier generation</term><term>Chemical composition</term><term>Dark conductivity</term><term>Defect formation</term><term>Localized states</term><term>Photoconductivity</term><term>Photosensitivity</term><term>Power law</term><term>Thin films</term><term>Transient photoconductivity</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Composition chimique</term><term>Photoconductivité</term><term>Photoconductivité transitoire</term><term>Conductivité obscurité</term><term>Energie activation</term><term>Photosensibilité</term><term>Loi puissance</term><term>Formation défaut</term><term>Etat localisé</term><term>Génération porteur charge</term><term>Bismuth Indium Germanium Séléniure Mixte</term><term>Etat amorphe</term><term>Couche mince</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">This paper reports on the steady state and transient photoconductivity of Ge<sub>20</sub>Se<sub>70-x</sub>In<sub>10</sub>Bi<sub>x</sub> (x = 2, 4, 6, 8, 10) thermally evaporated thin films. The dark conductivity (σ<sub>d</sub>) increases with the increase in the Bi content. The value of σ<sub>d</sub> increases slowly from x = 2 to x = 6, but for x ≥ 8 the increase is quite abrupt. Photoconductivity (σ<sub>ph</sub>) also increases with the increase in the Bi content. The dark activation energy (ΔE<sub>d</sub>) decreases with the increase in the Bi content. There is a drop in the photosensitivity (σ<sub>ph</sub>/σ<sub>d</sub>) of films with the increase in Bi addition. The result of the intensity dependent steady state photoconductivity (σ<sub>ph</sub>) follows the power law with intensity (F), i.e. σ<sub>ph</sub>αF<sup>γ</sup> where the value of y is close to 0.5, suggesting the predominance of bimolecular recombination in these materials. The rise and decay of photocurrent show the increase in the differential lifetime (τ<sub>d</sub>), with the increase in the Bi content, indicating a delay in the recombination rate of photo-generated charge carriers. This change is governed by the photo-generated carriers trapped in the intrinsic defects or light induced defect creation through structural changes. One can therefore also expect that the density of states increases with the increase in the Bi content in amorphous thin films. The dispersion parameter (α) of the localized state energy distribution, determined from the decay curves, is also reported.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0022-3727</s0></fA01><fA02 i1="01"><s0>JPAPBE</s0></fA02><fA03 i2="1"><s0>J. phys., D. Appl. phys. : (Print)</s0></fA03><fA05><s2>41</s2></fA05><fA06><s2>17</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Effect of Bi addition on the electrical properties of a-Ge-Se-In thin films</s1></fA08><fA11 i1="01" i2="1"><s1>SHARMA (Ishu)</s1></fA11><fA11 i1="02" i2="1"><s1>KUMAR (Akshay)</s1></fA11><fA11 i1="03" i2="1"><s1>TRIPATHI (S. K.)</s1></fA11><fA11 i1="04" i2="1"><s1>BARMAN (P. B.)</s1></fA11><fA14 i1="01"><s1>Department of Physics, Jaypee University of Information Technology, Waknaghat</s1><s2>Solan, H.R-173215</s2><s3>IND</s3><sZ>1 aut.</sZ><sZ>4 aut.</sZ></fA14><fA14 i1="02"><s1>Department of Physics, Panjab University</s1><s2>Chandigarh</s2><s3>IND</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ></fA14><fA20><s2>175504.1-175504.8</s2></fA20><fA21><s1>2008</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>5841</s2><s5>354000197485660720</s5></fA43><fA44><s0>0000</s0><s1>© 2008 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>31 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>08-0464443</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of physics. D, Applied physics : (Print)</s0></fA64><fA66 i1="01"><s0>GBR</s0></fA66><fC01 i1="01" l="ENG"><s0>This paper reports on the steady state and transient photoconductivity of Ge<sub>20</sub>Se<sub>70-x</sub>In<sub>10</sub>Bi<sub>x</sub> (x = 2, 4, 6, 8, 10) thermally evaporated thin films. The dark conductivity (σ<sub>d</sub>) increases with the increase in the Bi content. The value of σ<sub>d</sub> increases slowly from x = 2 to x = 6, but for x ≥ 8 the increase is quite abrupt. Photoconductivity (σ<sub>ph</sub>) also increases with the increase in the Bi content. The dark activation energy (ΔE<sub>d</sub>) decreases with the increase in the Bi content. There is a drop in the photosensitivity (σ<sub>ph</sub>/σ<sub>d</sub>) of films with the increase in Bi addition. The result of the intensity dependent steady state photoconductivity (σ<sub>ph</sub>) follows the power law with intensity (F), i.e. σ<sub>ph</sub>αF<sup>γ</sup> where the value of y is close to 0.5, suggesting the predominance of bimolecular recombination in these materials. The rise and decay of photocurrent show the increase in the differential lifetime (τ<sub>d</sub>), with the increase in the Bi content, indicating a delay in the recombination rate of photo-generated charge carriers. This change is governed by the photo-generated carriers trapped in the intrinsic defects or light induced defect creation through structural changes. One can therefore also expect that the density of states increases with the increase in the Bi content in amorphous thin films. The dispersion parameter (α) of the localized state energy distribution, determined from the decay curves, is also reported.</s0></fC01><fC02 i1="01" i2="3"><s0>001B70C61J</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Composition chimique</s0><s5>02</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Chemical composition</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Photoconductivité</s0><s5>03</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Photoconductivity</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Photoconductivité transitoire</s0><s5>04</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>Transient photoconductivity</s0><s5>04</s5></fC03><fC03 i1="03" i2="X" l="SPA"><s0>Fotoconductividad transitoria</s0><s5>04</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Conductivité obscurité</s0><s5>05</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Dark conductivity</s0><s5>05</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Energie activation</s0><s5>06</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Activation energy</s0><s5>06</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Photosensibilité</s0><s5>07</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Photosensitivity</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="FRE"><s0>Loi puissance</s0><s5>08</s5></fC03><fC03 i1="07" i2="X" l="ENG"><s0>Power law</s0><s5>08</s5></fC03><fC03 i1="07" i2="X" l="SPA"><s0>Ley poder</s0><s5>08</s5></fC03><fC03 i1="08" i2="X" l="FRE"><s0>Formation défaut</s0><s5>09</s5></fC03><fC03 i1="08" i2="X" l="ENG"><s0>Defect formation</s0><s5>09</s5></fC03><fC03 i1="08" i2="X" l="SPA"><s0>Formación defecto</s0><s5>09</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Etat localisé</s0><s5>10</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Localized states</s0><s5>10</s5></fC03><fC03 i1="10" i2="X" l="FRE"><s0>Génération porteur charge</s0><s5>11</s5></fC03><fC03 i1="10" i2="X" l="ENG"><s0>Charge carrier generation</s0><s5>11</s5></fC03><fC03 i1="10" i2="X" l="SPA"><s0>Generación portador carga</s0><s5>11</s5></fC03><fC03 i1="11" i2="X" l="FRE"><s0>Bismuth Indium Germanium Séléniure Mixte</s0><s2>NC</s2><s2>NA</s2><s5>12</s5></fC03><fC03 i1="11" i2="X" l="ENG"><s0>Bismuth Indium Germanium Selenides Mixed</s0><s2>NC</s2><s2>NA</s2><s5>12</s5></fC03><fC03 i1="11" i2="X" l="SPA"><s0>Mixto</s0><s2>NC</s2><s2>NA</s2><s5>12</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Etat amorphe</s0><s5>15</s5></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Amorphous state</s0><s5>15</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Couche mince</s0><s5>16</s5></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Thin films</s0><s5>16</s5></fC03><fN21><s1>301</s1></fN21></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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