Electron and phonon dynamics in indium antimonide crystals
Identifieur interne : 006841 ( Main/Repository ); précédent : 006840; suivant : 006842Electron and phonon dynamics in indium antimonide crystals
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Abstract
Monte Carlo method is used for the study of electron and phonon dynamics in InSb crystals in the steady electric field. If the lattice temperature is significantly lower than the Debye temperature, and the lifetime of phonons is finite, their accumulation (especially LO ones) is found to occur in a limited range of momentum space. Accumulated phonons are shown to affect the values of electron drift velocity and mean energy. The values are subject to continuous increase in the time of ballistic flight upon step-like switching-on electric field, and subsequent decaying oscillations before accessing the stationary state. In contrast to these, the transient response of LO phonon number shows an abrupt increase after a picosdecond-scale delay, with a trend to subsequent saturation. Phonon band population inversion is discussed in relation to possible stimulated emission of photons.
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Goštauto g. 11</s1><s2>01108 Vilnius</s2><s3>LTU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country>Lituanie</country><wicri:noRegion>01108 Vilnius</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">08-0445868</idno><date when="2008">2008</date><idno type="stanalyst">PASCAL 08-0445868 INIST</idno><idno type="RBID">Pascal:08-0445868</idno><idno type="wicri:Area/Main/Corpus">006319</idno><idno type="wicri:Area/Main/Repository">006841</idno></publicationStmt><seriesStmt><idno type="ISSN">0306-8919</idno><title level="j" type="abbreviated">Opt. quantum electron.</title><title level="j" type="main">Optical and quantum electronics</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Electric field effects</term><term>Electron transport</term><term>Indium Antimonides</term><term>Infrared radiation</term><term>Lifetime</term><term>Momentum</term><term>Monte Carlo methods</term><term>Nonlinear optics</term><term>Optical materials</term><term>Population inversion</term><term>Stimulated emission</term><term>Transients</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Effet champ électrique</term><term>Phénomène transitoire</term><term>Inversion population</term><term>Emission stimulée</term><term>Méthode Monte Carlo</term><term>Rayonnement IR</term><term>Durée vie</term><term>Quantité mouvement</term><term>Matériau optique</term><term>Optique non linéaire</term><term>Indium Antimoniure</term><term>6320</term><term>Phonon</term><term>Transport électron</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Monte Carlo method is used for the study of electron and phonon dynamics in InSb crystals in the steady electric field. If the lattice temperature is significantly lower than the Debye temperature, and the lifetime of phonons is finite, their accumulation (especially LO ones) is found to occur in a limited range of momentum space. Accumulated phonons are shown to affect the values of electron drift velocity and mean energy. The values are subject to continuous increase in the time of ballistic flight upon step-like switching-on electric field, and subsequent decaying oscillations before accessing the stationary state. In contrast to these, the transient response of LO phonon number shows an abrupt increase after a picosdecond-scale delay, with a trend to subsequent saturation. 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All rights reserved.</s1></fA44><fA45><s0>1/4 p.</s0></fA45><fA47 i1="01" i2="1"><s0>08-0445868</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Optical and quantum electronics</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>Monte Carlo method is used for the study of electron and phonon dynamics in InSb crystals in the steady electric field. If the lattice temperature is significantly lower than the Debye temperature, and the lifetime of phonons is finite, their accumulation (especially LO ones) is found to occur in a limited range of momentum space. Accumulated phonons are shown to affect the values of electron drift velocity and mean energy. The values are subject to continuous increase in the time of ballistic flight upon step-like switching-on electric field, and subsequent decaying oscillations before accessing the stationary state. In contrast to these, the transient response of LO phonon number shows an abrupt increase after a picosdecond-scale delay, with a trend to subsequent saturation. 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