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Electronic surface states on the MOVPE-prepared InGa-terminated InGaAs(1 0 0) (4 x 2)/c(8 x 2) surface

Identifieur interne : 006814 ( Main/Repository ); précédent : 006813; suivant : 006815

Electronic surface states on the MOVPE-prepared InGa-terminated InGaAs(1 0 0) (4 x 2)/c(8 x 2) surface

Auteurs : RBID : Pascal:09-0113202

Descripteurs français

Pascal (Inist)
- Structure électronique, Etat surface, Croissance film, Méthode MOVPE, Composé ternaire, Arséniure de gallium, Arséniure d'indium, Ultravide, LEED, Microscopie tunnel balayage, Spectre photoélectron UV, Rayonnement synchrotron, Bande valence, Semiconducteur III-V, Reconstruction surface, Structure surface, Spectrométrie photoélectron, As In Ga, InGaAs, 7320A, 8115K, 6114H, 7960B.

English descriptors

KwdEn :
- Electronic structure, Film growth, Gallium arsenides, III-V semiconductors, Indium arsenides, LEED, MOVPE method, Photoelectron spectroscopy, Scanning tunneling microscopy, Surface reconstruction, Surface states, Surface structure, Synchrotron radiation, Ternary compounds, Ultrahigh vacuum, Ultraviolet photoelectron spectra, Valence bands.

Abstract

In this paper, the InGa-terminated InGaAs(1 0 0) (4 x 2)/c(8 x 2) surface was studied in detail, which turned out to be the most suitable to develop an InGaAs/GaAsSb interface that is as sharp as possible. In ultra high vacuum the InGaAs surface was investigated with low-energy electron diffraction, scanning tunneling microscopy and UV photoelectron spectroscopy employing synchrotron radiation as light source. Scanning the Γ-Δ-X direction by varying the photon energy between 8.5 eV and 50 eV, two surface states in the photoelectron spectra were observed in addition to the valence band peaks.

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Pascal:09-0113202

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<author><name sortKey="Seidel, U" uniqKey="Seidel U">U. Seidel</name>
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<s2>14109 Berlin</s2>
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<placeName><region type="land" nuts="3">Berlin</region>
<settlement type="city">Berlin</settlement>
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<author><name sortKey="Sagol, B E" uniqKey="Sagol B">B. E. Sagol</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Glienicker Strasse 100</s1>
<s2>14109 Berlin</s2>
<s3>DEU</s3>
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<settlement type="city">Berlin</settlement>
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<author><name sortKey="Pettenkofer, C" uniqKey="Pettenkofer C">C. Pettenkofer</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Glienicker Strasse 100</s1>
<s2>14109 Berlin</s2>
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<author><name sortKey="Hannappel, T" uniqKey="Hannappel T">T. Hannappel</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Glienicker Strasse 100</s1>
<s2>14109 Berlin</s2>
<s3>DEU</s3>
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<seriesStmt><idno type="ISSN">0169-4332</idno>
<title level="j" type="abbreviated">Appl. surf. sci.</title>
<title level="j" type="main">Applied surface science</title>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Electronic structure</term>
<term>Film growth</term>
<term>Gallium arsenides</term>
<term>III-V semiconductors</term>
<term>Indium arsenides</term>
<term>LEED</term>
<term>MOVPE method</term>
<term>Photoelectron spectroscopy</term>
<term>Scanning tunneling microscopy</term>
<term>Surface reconstruction</term>
<term>Surface states</term>
<term>Surface structure</term>
<term>Synchrotron radiation</term>
<term>Ternary compounds</term>
<term>Ultrahigh vacuum</term>
<term>Ultraviolet photoelectron spectra</term>
<term>Valence bands</term>
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<keywords scheme="Pascal" xml:lang="fr"><term>Structure électronique</term>
<term>Etat surface</term>
<term>Croissance film</term>
<term>Méthode MOVPE</term>
<term>Composé ternaire</term>
<term>Arséniure de gallium</term>
<term>Arséniure d'indium</term>
<term>Ultravide</term>
<term>LEED</term>
<term>Microscopie tunnel balayage</term>
<term>Spectre photoélectron UV</term>
<term>Rayonnement synchrotron</term>
<term>Bande valence</term>
<term>Semiconducteur III-V</term>
<term>Reconstruction surface</term>
<term>Structure surface</term>
<term>Spectrométrie photoélectron</term>
<term>As In Ga</term>
<term>InGaAs</term>
<term>7320A</term>
<term>8115K</term>
<term>6114H</term>
<term>7960B</term>
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<front><div type="abstract" xml:lang="en">In this paper, the InGa-terminated InGaAs(1 0 0) (4 x 2)/c(8 x 2) surface was studied in detail, which turned out to be the most suitable to develop an InGaAs/GaAsSb interface that is as sharp as possible. In ultra high vacuum the InGaAs surface was investigated with low-energy electron diffraction, scanning tunneling microscopy and UV photoelectron spectroscopy employing synchrotron radiation as light source. Scanning the Γ-Δ-X direction by varying the photon energy between 8.5 eV and 50 eV, two surface states in the photoelectron spectra were observed in addition to the valence band peaks.</div>
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<fA15 i1="01"><s1>Universidade Federal de Pernambuco, Departamento de Fisica, Cidade Universitaria</s1>
<s2>50670-901 Recife, Pernambuco</s2>
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<fC01 i1="01" l="ENG"><s0>In this paper, the InGa-terminated InGaAs(1 0 0) (4 x 2)/c(8 x 2) surface was studied in detail, which turned out to be the most suitable to develop an InGaAs/GaAsSb interface that is as sharp as possible. In ultra high vacuum the InGaAs surface was investigated with low-energy electron diffraction, scanning tunneling microscopy and UV photoelectron spectroscopy employing synchrotron radiation as light source. Scanning the Γ-Δ-X direction by varying the photon energy between 8.5 eV and 50 eV, two surface states in the photoelectron spectra were observed in addition to the valence band peaks.</s0>
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Electronic surface states on the MOVPE-prepared InGa-terminated InGaAs(1 0 0) (4 x 2)/c(8 x 2) surface

Electronic surface states on the MOVPE-prepared InGa-terminated InGaAs(1 0 0) (4 x 2)/c(8 x 2) surface

Descripteurs français

English descriptors

Abstract

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Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri