IndiumV3, Main, Repository, bibRecord, 006504

InGaAs/AIGaAs Quantum Dot Nanostructures for 980 nm Operation

Identifieur interne : 006504 ( Main/Repository ); précédent : 006503; suivant : 006505

InGaAs/AIGaAs Quantum Dot Nanostructures for 980 nm Operation

Auteurs : RBID : Pascal:08-0443754

Descripteurs français

Pascal (Inist)
- Point quantique, Nanomatériau, Nanostructure, Photoluminescence, Aluminium Gallium Arséniure Mixte, Epitaxie jet moléculaire, Déplacement raie, Microscopie électronique balayage transmission, Distribution concentration, Emission optique, Optoélectronique, Synthèse nanomatériau, Arséniure d'indium, Arséniure de gallium, Arséniure d'aluminium, InGaAs, AlGaAs, 8535B, 8116, 8115H, 8107T, Dispositif point quantique.

English descriptors

KwdEn :
- Aluminium Gallium Arsenides Mixed, Aluminium arsenides, Concentration distribution, Gallium arsenides, Indium arsenides, Light emission, Molecular beam epitaxy, Nanomaterial synthesis, Nanostructured materials, Nanostructures, Optoelectronics, Photoluminescence, Quantum dot device, Quantum dots, Scanning transmission electron microscopy, Spectral line shift.

Abstract

We studied the dependence of the photoluminescence emission energy of InGaAs/AlGaAs quantum dot (QD) structures grown by molecular beam epitaxy as a function of the Al and In content in barriers and QDs, respectively. We show that emissions are blue-shifted by increasing both the Al content in the 0 to 0.30 range and, unexpectedly, the In composition in the 0.4 to 0.7 range; we suggest that such results stem from significant changes in QD sizes, shapes, and composition profiles. This research led to the preparation of structures with efficient light emission in the 980 nm window of optoelectronic interest.

Links toward previous steps (curation, corpus...)

to stream Main, to step Corpus: 006343

Links to Exploration step

Pascal:08-0443754

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">InGaAs/AIGaAs Quantum Dot Nanostructures for 980 nm Operation</title>
<author><name sortKey="Trevisi, G" uniqKey="Trevisi G">G. Trevisi</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>CNR IMEM Institute, Parco delle Scienze 37a</s1>
<s2>43100 Parma</s2>
<s3>ITA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>Italie</country>
<wicri:noRegion>43100 Parma</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Frigeri, P" uniqKey="Frigeri P">P. Frigeri</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>CNR IMEM Institute, Parco delle Scienze 37a</s1>
<s2>43100 Parma</s2>
<s3>ITA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>Italie</country>
<wicri:noRegion>43100 Parma</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Minelli, M" uniqKey="Minelli M">M. Minelli</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>CNR IMEM Institute, Parco delle Scienze 37a</s1>
<s2>43100 Parma</s2>
<s3>ITA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>Italie</country>
<wicri:noRegion>43100 Parma</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Franchi, S" uniqKey="Franchi S">S. Franchi</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>CNR IMEM Institute, Parco delle Scienze 37a</s1>
<s2>43100 Parma</s2>
<s3>ITA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>Italie</country>
<wicri:noRegion>43100 Parma</wicri:noRegion>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">08-0443754</idno>
<date when="2008">2008</date>
<idno type="stanalyst">PASCAL 08-0443754 INIST</idno>
<idno type="RBID">Pascal:08-0443754</idno>
<idno type="wicri:Area/Main/Corpus">006343</idno>
<idno type="wicri:Area/Main/Repository">006504</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">0361-5235</idno>
<title level="j" type="abbreviated">J. electron. mater.</title>
<title level="j" type="main">Journal of electronic materials</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium Gallium Arsenides Mixed</term>
<term>Aluminium arsenides</term>
<term>Concentration distribution</term>
<term>Gallium arsenides</term>
<term>Indium arsenides</term>
<term>Light emission</term>
<term>Molecular beam epitaxy</term>
<term>Nanomaterial synthesis</term>
<term>Nanostructured materials</term>
<term>Nanostructures</term>
<term>Optoelectronics</term>
<term>Photoluminescence</term>
<term>Quantum dot device</term>
<term>Quantum dots</term>
<term>Scanning transmission electron microscopy</term>
<term>Spectral line shift</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Point quantique</term>
<term>Nanomatériau</term>
<term>Nanostructure</term>
<term>Photoluminescence</term>
<term>Aluminium Gallium Arséniure Mixte</term>
<term>Epitaxie jet moléculaire</term>
<term>Déplacement raie</term>
<term>Microscopie électronique balayage transmission</term>
<term>Distribution concentration</term>
<term>Emission optique</term>
<term>Optoélectronique</term>
<term>Synthèse nanomatériau</term>
<term>Arséniure d'indium</term>
<term>Arséniure de gallium</term>
<term>Arséniure d'aluminium</term>
<term>InGaAs</term>
<term>AlGaAs</term>
<term>8535B</term>
<term>8116</term>
<term>8115H</term>
<term>8107T</term>
<term>Dispositif point quantique</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">We studied the dependence of the photoluminescence emission energy of InGaAs/AlGaAs quantum dot (QD) structures grown by molecular beam epitaxy as a function of the Al and In content in barriers and QDs, respectively. We show that emissions are blue-shifted by increasing both the Al content in the 0 to 0.30 range and, unexpectedly, the In composition in the 0.4 to 0.7 range; we suggest that such results stem from significant changes in QD sizes, shapes, and composition profiles. This research led to the preparation of structures with efficient light emission in the 980 nm window of optoelectronic interest.</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0361-5235</s0>
</fA01>
<fA02 i1="01"><s0>JECMA5</s0>
</fA02>
<fA03 i2="1"><s0>J. electron. mater.</s0>
</fA03>
<fA05><s2>37</s2>
</fA05>
<fA06><s2>7</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG"><s1>InGaAs/AIGaAs Quantum Dot Nanostructures for 980 nm Operation</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>TREVISI (G.)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>FRIGERI (P.)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>MINELLI (M.)</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>FRANCHI (S.)</s1>
</fA11>
<fA14 i1="01"><s1>CNR IMEM Institute, Parco delle Scienze 37a</s1>
<s2>43100 Parma</s2>
<s3>ITA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</fA14>
<fA20><s1>937-943</s1>
</fA20>
<fA21><s1>2008</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>15479</s2>
<s5>354000198015970010</s5>
</fA43>
<fA44><s0>0000</s0>
<s1>© 2008 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45><s0>30 ref.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>08-0443754</s0>
</fA47>
<fA60><s1>P</s1>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Journal of electronic materials</s0>
</fA64>
<fA66 i1="01"><s0>USA</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>We studied the dependence of the photoluminescence emission energy of InGaAs/AlGaAs quantum dot (QD) structures grown by molecular beam epitaxy as a function of the Al and In content in barriers and QDs, respectively. We show that emissions are blue-shifted by increasing both the Al content in the 0 to 0.30 range and, unexpectedly, the In composition in the 0.4 to 0.7 range; we suggest that such results stem from significant changes in QD sizes, shapes, and composition profiles. This research led to the preparation of structures with efficient light emission in the 980 nm window of optoelectronic interest.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B80A07T</s0>
</fC02>
<fC02 i1="02" i2="X"><s0>001D03F18</s0>
</fC02>
<fC02 i1="03" i2="3"><s0>001B80A16</s0>
</fC02>
<fC02 i1="04" i2="3"><s0>001B80A15H</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE"><s0>Point quantique</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="3" l="ENG"><s0>Quantum dots</s0>
<s5>01</s5>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>Nanomatériau</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="3" l="ENG"><s0>Nanostructured materials</s0>
<s5>02</s5>
</fC03>
<fC03 i1="03" i2="3" l="FRE"><s0>Nanostructure</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="3" l="ENG"><s0>Nanostructures</s0>
<s5>03</s5>
</fC03>
<fC03 i1="04" i2="3" l="FRE"><s0>Photoluminescence</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="3" l="ENG"><s0>Photoluminescence</s0>
<s5>04</s5>
</fC03>
<fC03 i1="05" i2="X" l="FRE"><s0>Aluminium Gallium Arséniure Mixte</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="X" l="ENG"><s0>Aluminium Gallium Arsenides Mixed</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="X" l="SPA"><s0>Mixto</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>05</s5>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>Epitaxie jet moléculaire</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="3" l="ENG"><s0>Molecular beam epitaxy</s0>
<s5>06</s5>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Déplacement raie</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>Spectral line shift</s0>
<s5>07</s5>
</fC03>
<fC03 i1="08" i2="3" l="FRE"><s0>Microscopie électronique balayage transmission</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="3" l="ENG"><s0>Scanning transmission electron microscopy</s0>
<s5>08</s5>
</fC03>
<fC03 i1="09" i2="X" l="FRE"><s0>Distribution concentration</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="X" l="ENG"><s0>Concentration distribution</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="X" l="SPA"><s0>Distribución concentración</s0>
<s5>09</s5>
</fC03>
<fC03 i1="10" i2="X" l="FRE"><s0>Emission optique</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="X" l="ENG"><s0>Light emission</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="X" l="SPA"><s0>Emisión óptica</s0>
<s5>10</s5>
</fC03>
<fC03 i1="11" i2="X" l="FRE"><s0>Optoélectronique</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="X" l="ENG"><s0>Optoelectronics</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="X" l="SPA"><s0>Optoelectrónica</s0>
<s5>11</s5>
</fC03>
<fC03 i1="12" i2="X" l="FRE"><s0>Synthèse nanomatériau</s0>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="X" l="ENG"><s0>Nanomaterial synthesis</s0>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="X" l="SPA"><s0>Síntesis nanomaterial</s0>
<s5>12</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>Arséniure d'indium</s0>
<s2>NK</s2>
<s5>15</s5>
</fC03>
<fC03 i1="13" i2="3" l="ENG"><s0>Indium arsenides</s0>
<s2>NK</s2>
<s5>15</s5>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>Arséniure de gallium</s0>
<s2>NK</s2>
<s5>16</s5>
</fC03>
<fC03 i1="14" i2="3" l="ENG"><s0>Gallium arsenides</s0>
<s2>NK</s2>
<s5>16</s5>
</fC03>
<fC03 i1="15" i2="3" l="FRE"><s0>Arséniure d'aluminium</s0>
<s2>NK</s2>
<s5>17</s5>
</fC03>
<fC03 i1="15" i2="3" l="ENG"><s0>Aluminium arsenides</s0>
<s2>NK</s2>
<s5>17</s5>
</fC03>
<fC03 i1="16" i2="3" l="FRE"><s0>InGaAs</s0>
<s4>INC</s4>
<s5>46</s5>
</fC03>
<fC03 i1="17" i2="3" l="FRE"><s0>AlGaAs</s0>
<s4>INC</s4>
<s5>47</s5>
</fC03>
<fC03 i1="18" i2="3" l="FRE"><s0>8535B</s0>
<s4>INC</s4>
<s5>65</s5>
</fC03>
<fC03 i1="19" i2="3" l="FRE"><s0>8116</s0>
<s4>INC</s4>
<s5>66</s5>
</fC03>
<fC03 i1="20" i2="3" l="FRE"><s0>8115H</s0>
<s4>INC</s4>
<s5>67</s5>
</fC03>
<fC03 i1="21" i2="3" l="FRE"><s0>8107T</s0>
<s4>INC</s4>
<s5>71</s5>
</fC03>
<fC03 i1="22" i2="3" l="FRE"><s0>Dispositif point quantique</s0>
<s4>CD</s4>
<s5>96</s5>
</fC03>
<fC03 i1="22" i2="3" l="ENG"><s0>Quantum dot device</s0>
<s4>CD</s4>
<s5>96</s5>
</fC03>
<fC03 i1="22" i2="3" l="SPA"><s0>Dispositivo punto cuántico</s0>
<s4>CD</s4>
<s5>96</s5>
</fC03>
<fN21><s1>287</s1>
</fN21>
</pA>
</standard>
</inist>
</record>

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/Main/Repository

HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 006504 | SxmlIndent | more

HfdSelect -h $EXPLOR_AREA/Data/Main/Repository/biblio.hfd -nk 006504 | SxmlIndent | more

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    Main
   |étape=   Repository
   |type=    RBID
   |clé=     Pascal:08-0443754
   |texte=   InGaAs/AIGaAs Quantum Dot Nanostructures for 980 nm Operation
}}

This area was generated with Dilib version V0.5.77.
Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024

	Serveur d'exploration sur l'Indium
	Attention, ce site est en cours de développement ! Attention, site généré par des moyens informatiques à partir de corpus bruts. Les informations ne sont donc pas validées.

Serveur d'exploration sur l'Indium

InGaAs/AIGaAs Quantum Dot Nanostructures for 980 nm Operation

InGaAs/AIGaAs Quantum Dot Nanostructures for 980 nm Operation

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri