Critical layer thickness of Galn(N)As(Sb) QWs on GaAs and InP substrates for (001) and (111) orientations
Identifieur interne : 005788 ( Main/Repository ); précédent : 005787; suivant : 005789Critical layer thickness of Galn(N)As(Sb) QWs on GaAs and InP substrates for (001) and (111) orientations
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Abstract
The aim of this work is to examine the effect of dilute nitride and/or antimonite on the critical layer thickness of GaInAs quantum wells on GaAs and InP substrates by means of Matthews and Blakeslee force model. The study provides a comparison of the critical layer thickness of the related GaIn(N)As(Sb) QWs in (001) and (111) orientation. Our calculations indicate the importance of antimonite and the proper usage of it with dilute nitrides in order to tailor the active layer thickness and emission wavelength of quantum well laser devices.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Critical layer thickness of Galn(N)As(Sb) QWs on GaAs and InP substrates for (001) and (111) orientations</title><author><name sortKey="Koksal, K" uniqKey="Koksal K">K. Köksal</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Engineering Physics, University of Gaziantep</s1><s2>27310, Gaziantep</s2><s3>TUR</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country>Turquie</country><wicri:noRegion>27310, Gaziantep</wicri:noRegion></affiliation></author><author><name sortKey="Con L, B" uniqKey="Con L B">B. Cön L</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Engineering Physics, University of Gaziantep</s1><s2>27310, Gaziantep</s2><s3>TUR</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country>Turquie</country><wicri:noRegion>27310, Gaziantep</wicri:noRegion></affiliation></author><author><name sortKey="Oduncuoglu, M" uniqKey="Oduncuoglu M">M. Oduncuoglu</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Faculty of Arts and Sciences University of Kilis 7 Arahk</s1><s2>Kilis</s2><s3>TUR</s3><sZ>3 aut.</sZ></inist:fA14><country>Turquie</country><wicri:noRegion>Faculty of Arts and Sciences University of Kilis 7 Arahk</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">09-0334749</idno><date when="2009">2009</date><idno type="stanalyst">PASCAL 09-0334749 INIST</idno><idno type="RBID">Pascal:09-0334749</idno><idno type="wicri:Area/Main/Corpus">005306</idno><idno type="wicri:Area/Main/Repository">005788</idno></publicationStmt><seriesStmt><idno type="ISSN">1434-6028</idno><title level="j" type="abbreviated">Eur. phys. j., B Cond. matter phys.</title><title level="j" type="main">The European physical journal. B, Condensed matter physics</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Chemical composition</term><term>Elastic constants</term><term>Gallium Indium Antimonides Mixed</term><term>Gallium Indium Arsenides Mixed</term><term>Impurity density</term><term>Interpolation</term><term>Lattice parameters</term><term>Nitrogen additions</term><term>Stiffness</term><term>Thickness</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Epaisseur</term><term>Concentration impureté</term><term>Addition azote</term><term>Composition chimique</term><term>Paramètre cristallin</term><term>Constante élasticité</term><term>Rigidité</term><term>Interpolation</term><term>Gallium Indium Arséniure Mixte</term><term>Gallium Indium Antimoniure Mixte</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The aim of this work is to examine the effect of dilute nitride and/or antimonite on the critical layer thickness of GaInAs quantum wells on GaAs and InP substrates by means of Matthews and Blakeslee force model. The study provides a comparison of the critical layer thickness of the related GaIn(N)As(Sb) QWs in (001) and (111) orientation. Our calculations indicate the importance of antimonite and the proper usage of it with dilute nitrides in order to tailor the active layer thickness and emission wavelength of quantum well laser devices.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1434-6028</s0></fA01><fA03 i2="1"><s0>Eur. phys. j., B Cond. matter phys.</s0></fA03><fA05><s2>69</s2></fA05><fA06><s2>2</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Critical layer thickness of Galn(N)As(Sb) QWs on GaAs and InP substrates for (001) and (111) orientations</s1></fA08><fA11 i1="01" i2="1"><s1>KÖKSAL (K.)</s1></fA11><fA11 i1="02" i2="1"><s1>CÖNÜL (B.)</s1></fA11><fA11 i1="03" i2="1"><s1>ODUNCUOGLU (M.)</s1></fA11><fA14 i1="01"><s1>Department of Engineering Physics, University of Gaziantep</s1><s2>27310, Gaziantep</s2><s3>TUR</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></fA14><fA14 i1="02"><s1>Faculty of Arts and Sciences University of Kilis 7 Arahk</s1><s2>Kilis</s2><s3>TUR</s3><sZ>3 aut.</sZ></fA14><fA20><s1>211-218</s1></fA20><fA21><s1>2009</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>26688</s2><s5>354000188281790080</s5></fA43><fA44><s0>0000</s0><s1>© 2009 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>53 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>09-0334749</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>The European physical journal. B, Condensed matter physics</s0></fA64><fA66 i1="01"><s0>FRA</s0></fA66><fC01 i1="01" l="ENG"><s0>The aim of this work is to examine the effect of dilute nitride and/or antimonite on the critical layer thickness of GaInAs quantum wells on GaAs and InP substrates by means of Matthews and Blakeslee force model. The study provides a comparison of the critical layer thickness of the related GaIn(N)As(Sb) QWs in (001) and (111) orientation. 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