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Nonlinearities of PIN Photodiodes and PSPICE simulation

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Nonlinearities of PIN Photodiodes and PSPICE simulation

Auteurs : RBID : Pascal:09-0409926

Descripteurs français

Pascal (Inist)
- Courant photoélectrique, Charge espace, Champ électrique, Photodiode, Convertisseur analogique numérique, Etude expérimentale, Méthode MOCVD, Fiabilité, Monocristal, Composé ternaire, Gallium Arséniure, Indium Arséniure, Composé binaire, Semiconducteur III-V, Indium Phosphure, Effet température, As Ga In, In P, InGaAs, InP, 0130C, Photonique.

English descriptors

KwdEn :
- Analog to digital converters, Binary compounds, Electric fields, Experimental study, Gallium Arsenides, III-V semiconductors, Indium Arsenides, Indium Phosphides, MOCVD, Monocrystals, Photocurrents, Photodiodes, Photonics, Reliability, Space charge, Temperature effects, Ternary compounds.

Abstract

It is well known that the performance of modem photodiodes is determined by three basic parameters: sensitivity, response time and noise equivalent power (NEP). In practical situations it is almost always necessary to achieve the maximum product of sensitivity and reciprocal response time (bandwidth). At low Continuous Wave (CW) light incidence, a photodiode gives a signal proportional to optical intensity. But with increasing light power, photocurrent deviates from a linear behavior. High-linear performance is becoming increasingly important for photodiodes because high photocurrents directly translate into an increased dynamic range and reduced noise figure. This is crucial for many photonic systems, including photonic analog-to-digital converters and high-bit-rate digital receivers. The increase of photocurrent depends on two primary factors: one is space-charge limitations, which are influenced by device physical dimensions, structure type, illumination conditions, maximum electric field, and the other is thermal considerations. From the view of long-term reliability of photodiodes, thermal effects are crucial because it results in device failure due to dark current runaway. As known to us, there have many reports on the thermal effect originating from InGaAs intrinsic region. However, nonlinearity originating from both InGaAs intrinsic region and contact resistance is still unclear. In some cases, the contact resistance between metal electrode and semiconductor is not negligible. In this report, N type heavily doped InP single crystal is used as a substrate, on which a buffer layer of n doped InP is grown. Then the intrinsic absorbing layer of InGaAs, and finally a transparent InP cap layer are deposited with MOCVD technique. A circuit model has been developed and the nolinearities of PIN photodiodes has also been discussed.

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Pascal:09-0409926

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<author><name>YANLI ZHAO</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Wuhan National Laboratory for Optoelectronics, School of Optoelectronics Science and Engineering, Huazhong University of Science and Technology</s1>
<s2>Wuhan, Hubei Province 430074</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<wicri:noRegion>Wuhan, Hubei Province 430074</wicri:noRegion>
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<title level="j" type="abbreviated">Proc. SPIE Int. Soc. Opt. Eng.</title>
<title level="j" type="main">Proceedings of SPIE, the International Society for Optical Engineering</title>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Analog to digital converters</term>
<term>Binary compounds</term>
<term>Electric fields</term>
<term>Experimental study</term>
<term>Gallium Arsenides</term>
<term>III-V semiconductors</term>
<term>Indium Arsenides</term>
<term>Indium Phosphides</term>
<term>MOCVD</term>
<term>Monocrystals</term>
<term>Photocurrents</term>
<term>Photodiodes</term>
<term>Photonics</term>
<term>Reliability</term>
<term>Space charge</term>
<term>Temperature effects</term>
<term>Ternary compounds</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Courant photoélectrique</term>
<term>Charge espace</term>
<term>Champ électrique</term>
<term>Photodiode</term>
<term>Convertisseur analogique numérique</term>
<term>Etude expérimentale</term>
<term>Méthode MOCVD</term>
<term>Fiabilité</term>
<term>Monocristal</term>
<term>Composé ternaire</term>
<term>Gallium Arséniure</term>
<term>Indium Arséniure</term>
<term>Composé binaire</term>
<term>Semiconducteur III-V</term>
<term>Indium Phosphure</term>
<term>Effet température</term>
<term>As Ga In</term>
<term>In P</term>
<term>InGaAs</term>
<term>InP</term>
<term>0130C</term>
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<front><div type="abstract" xml:lang="en">It is well known that the performance of modem photodiodes is determined by three basic parameters: sensitivity, response time and noise equivalent power (NEP). In practical situations it is almost always necessary to achieve the maximum product of sensitivity and reciprocal response time (bandwidth). At low Continuous Wave (CW) light incidence, a photodiode gives a signal proportional to optical intensity. But with increasing light power, photocurrent deviates from a linear behavior. High-linear performance is becoming increasingly important for photodiodes because high photocurrents directly translate into an increased dynamic range and reduced noise figure. This is crucial for many photonic systems, including photonic analog-to-digital converters and high-bit-rate digital receivers. The increase of photocurrent depends on two primary factors: one is space-charge limitations, which are influenced by device physical dimensions, structure type, illumination conditions, maximum electric field, and the other is thermal considerations. From the view of long-term reliability of photodiodes, thermal effects are crucial because it results in device failure due to dark current runaway. As known to us, there have many reports on the thermal effect originating from InGaAs intrinsic region. However, nonlinearity originating from both InGaAs intrinsic region and contact resistance is still unclear. In some cases, the contact resistance between metal electrode and semiconductor is not negligible. In this report, N type heavily doped InP single crystal is used as a substrate, on which a buffer layer of n doped InP is grown. Then the intrinsic absorbing layer of InGaAs, and finally a transparent InP cap layer are deposited with MOCVD technique. A circuit model has been developed and the nolinearities of PIN photodiodes has also been discussed.</div>
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<s2>Wuhan, Hubei Province 430074</s2>
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<fC01 i1="01" l="ENG"><s0>It is well known that the performance of modem photodiodes is determined by three basic parameters: sensitivity, response time and noise equivalent power (NEP). In practical situations it is almost always necessary to achieve the maximum product of sensitivity and reciprocal response time (bandwidth). At low Continuous Wave (CW) light incidence, a photodiode gives a signal proportional to optical intensity. But with increasing light power, photocurrent deviates from a linear behavior. High-linear performance is becoming increasingly important for photodiodes because high photocurrents directly translate into an increased dynamic range and reduced noise figure. This is crucial for many photonic systems, including photonic analog-to-digital converters and high-bit-rate digital receivers. The increase of photocurrent depends on two primary factors: one is space-charge limitations, which are influenced by device physical dimensions, structure type, illumination conditions, maximum electric field, and the other is thermal considerations. From the view of long-term reliability of photodiodes, thermal effects are crucial because it results in device failure due to dark current runaway. As known to us, there have many reports on the thermal effect originating from InGaAs intrinsic region. However, nonlinearity originating from both InGaAs intrinsic region and contact resistance is still unclear. In some cases, the contact resistance between metal electrode and semiconductor is not negligible. In this report, N type heavily doped InP single crystal is used as a substrate, on which a buffer layer of n doped InP is grown. Then the intrinsic absorbing layer of InGaAs, and finally a transparent InP cap layer are deposited with MOCVD technique. A circuit model has been developed and the nolinearities of PIN photodiodes has also been discussed.</s0>
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<s5>03</s5>
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<s5>04</s5>
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<s5>04</s5>
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<s5>05</s5>
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<s5>05</s5>
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<fC03 i1="04" i2="3" l="FRE"><s0>Photodiode</s0>
<s5>11</s5>
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<s5>11</s5>
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<s5>12</s5>
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<s5>12</s5>
</fC03>
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<s5>29</s5>
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<s5>29</s5>
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<s5>30</s5>
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<s5>47</s5>
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<s5>47</s5>
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<s5>50</s5>
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<s5>50</s5>
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<fC03 i1="11" i2="3" l="FRE"><s0>Gallium Arséniure</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>51</s5>
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<fC03 i1="11" i2="3" l="ENG"><s0>Gallium Arsenides</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>51</s5>
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<fC03 i1="12" i2="3" l="FRE"><s0>Indium Arséniure</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>52</s5>
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<fC03 i1="12" i2="3" l="ENG"><s0>Indium Arsenides</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>52</s5>
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<s5>53</s5>
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<s5>53</s5>
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<s5>54</s5>
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<s5>55</s5>
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<s5>61</s5>
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<s5>61</s5>
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<s5>75</s5>
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<s5>76</s5>
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<s5>83</s5>
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<s5>84</s5>
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<s5>85</s5>
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<s5>96</s5>
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Nonlinearities of PIN Photodiodes and PSPICE simulation

Nonlinearities of PIN Photodiodes and PSPICE simulation

Descripteurs français

English descriptors

Abstract

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