Striving for a standard protocol for preconditioning or stabilization of polycrystalline thin film photovoltaic modules
Identifieur interne : 004B48 ( Main/Repository ); précédent : 004B47; suivant : 004B49Striving for a standard protocol for preconditioning or stabilization of polycrystalline thin film photovoltaic modules
Auteurs : RBID : Pascal:10-0114140Descripteurs français
- Pascal (Inist)
- Norme essai, Etalon, Stabilisation, Polycristal, Couche mince, Système photovoltaïque, Panneau solaire, Tellurure de cadmium, Cuivre Indium Gallium Séléniure, Caractéristique courant tension, Performance, Fiabilité, Erreur, Durée vie, Essai normalisé, Silicium, Effet Staebler Wronski, Défaut, Facteur photique.
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Abstract
Polycrystalline photovoltaic (PV) modules containing cadmium telluride (CdTe) or copper indium gallium diselenide (CIGS) thin film materials can exhibit substantial transient or metastable current-voltage (I-V) characteristics depending on prior exposure history. Transient I-V phenomena confound the accurate determination of module performance, their reliability, and their measured temperature coefficients, which can introduce error in energy ratings models or service-lifetime predictions. Indeed, for either of these two technologies, a unique performance metric may be illusory without first specifying recent exposure or state-even at standard test conditions. The current standard preconditioning procedure for thin-film PV modules was designed for amorphous silicon (a-Si), and is likely inadequate for CdTe and CIGS. For a-Si, the Staebler-Wronski effect is known to result from defects, created via breaking of weak silicon bonds or light-activated trapping at the device junction, occurring rapidly upon light-exposure. For CdTe and CIGS devices, there is less agreement on the causes of metastable behavior. The data suggests that either deep-trapping of charge carriers, or the migration and/or electronic activation of copper may be responsible. Because these are quite disparate mechanisms, we suspect that there may be a more practical preconditioning procedure that can be employed prior to accurate performance testing for CdTe and CIGS modules. We devise a test plan to examine and compare the effects of light soaking versus forward-biased dark exposure at elevated temperatures, as parallel strategies to determine a feasible standard protocol for preconditioning and stabilizing these polycrystalline PV technologies, and report on the results of our tests.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Striving for a standard protocol for preconditioning or stabilization of polycrystalline thin film photovoltaic modules</title><author><name sortKey="Del Cueto, J A" uniqKey="Del Cueto J">J. A. Del Cueto</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>National Renewable Energy Laboratory 1617 Cole Blvd.</s1><s2>Golden, CO, 80401</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>National Renewable Energy Laboratory 1617 Cole Blvd.</wicri:noRegion></affiliation></author><author><name sortKey="Deline, C A" uniqKey="Deline C">C. A. Deline</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>National Renewable Energy Laboratory 1617 Cole Blvd.</s1><s2>Golden, CO, 80401</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>National Renewable Energy Laboratory 1617 Cole Blvd.</wicri:noRegion></affiliation></author><author><name sortKey="Albin, D S" uniqKey="Albin D">D. S. Albin</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>National Renewable Energy Laboratory 1617 Cole Blvd.</s1><s2>Golden, CO, 80401</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>National Renewable Energy Laboratory 1617 Cole Blvd.</wicri:noRegion></affiliation></author><author><name sortKey="Rummel, S R" uniqKey="Rummel S">S. R. Rummel</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>National Renewable Energy Laboratory 1617 Cole Blvd.</s1><s2>Golden, CO, 80401</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>National Renewable Energy Laboratory 1617 Cole Blvd.</wicri:noRegion></affiliation></author><author><name sortKey="Anderberg, A" uniqKey="Anderberg A">A. Anderberg</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>National Renewable Energy Laboratory 1617 Cole Blvd.</s1><s2>Golden, CO, 80401</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>National Renewable Energy Laboratory 1617 Cole Blvd.</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">10-0114140</idno><date when="2009">2009</date><idno type="stanalyst">PASCAL 10-0114140 INIST</idno><idno type="RBID">Pascal:10-0114140</idno><idno type="wicri:Area/Main/Corpus">004938</idno><idno type="wicri:Area/Main/Repository">004B48</idno></publicationStmt><seriesStmt><idno type="ISSN">0277-786X</idno><title level="j" type="abbreviated">Proc. SPIE Int. Soc. Opt. Eng.</title><title level="j" type="main">Proceedings of SPIE, the International Society for Optical Engineering</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Cadmium tellurides</term><term>Copper Indium Gallium Selenides</term><term>Defect</term><term>Error</term><term>Lifetime</term><term>Light effect</term><term>Performance</term><term>Photovoltaic array</term><term>Photovoltaic system</term><term>Polycrystal</term><term>Reliability</term><term>Silicon</term><term>Stabilization</term><term>Staebler Wronski effect</term><term>Standard</term><term>Standard test</term><term>Test standard</term><term>Thin film</term><term>Voltage current curve</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Norme essai</term><term>Etalon</term><term>Stabilisation</term><term>Polycristal</term><term>Couche mince</term><term>Système photovoltaïque</term><term>Panneau solaire</term><term>Tellurure de cadmium</term><term>Cuivre Indium Gallium Séléniure</term><term>Caractéristique courant tension</term><term>Performance</term><term>Fiabilité</term><term>Erreur</term><term>Durée vie</term><term>Essai normalisé</term><term>Silicium</term><term>Effet Staebler Wronski</term><term>Défaut</term><term>Facteur photique</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Polycrystalline photovoltaic (PV) modules containing cadmium telluride (CdTe) or copper indium gallium diselenide (CIGS) thin film materials can exhibit substantial transient or metastable current-voltage (I-V) characteristics depending on prior exposure history. Transient I-V phenomena confound the accurate determination of module performance, their reliability, and their measured temperature coefficients, which can introduce error in energy ratings models or service-lifetime predictions. Indeed, for either of these two technologies, a unique performance metric may be illusory without first specifying recent exposure or state-even at standard test conditions. The current standard preconditioning procedure for thin-film PV modules was designed for amorphous silicon (a-Si), and is likely inadequate for CdTe and CIGS. For a-Si, the Staebler-Wronski effect is known to result from defects, created via breaking of weak silicon bonds or light-activated trapping at the device junction, occurring rapidly upon light-exposure. For CdTe and CIGS devices, there is less agreement on the causes of metastable behavior. The data suggests that either deep-trapping of charge carriers, or the migration and/or electronic activation of copper may be responsible. Because these are quite disparate mechanisms, we suspect that there may be a more practical preconditioning procedure that can be employed prior to accurate performance testing for CdTe and CIGS modules. We devise a test plan to examine and compare the effects of light soaking versus forward-biased dark exposure at elevated temperatures, as parallel strategies to determine a feasible standard protocol for preconditioning and stabilizing these polycrystalline PV technologies, and report on the results of our tests.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0277-786X</s0></fA01><fA02 i1="01"><s0>PSISDG</s0></fA02><fA03 i2="1"><s0>Proc. SPIE Int. Soc. Opt. Eng.</s0></fA03><fA05><s2>7412</s2></fA05><fA08 i1="01" i2="1" l="ENG"><s1>Striving for a standard protocol for preconditioning or stabilization of polycrystalline thin film photovoltaic modules</s1></fA08><fA09 i1="01" i2="1" l="ENG"><s1>Reliability of photovoltaic cells, modules, components, and systems II : 3-6 August 2009, San Diego, California, United States</s1></fA09><fA11 i1="01" i2="1"><s1>DEL CUETO (J. A.)</s1></fA11><fA11 i1="02" i2="1"><s1>DELINE (C. A.)</s1></fA11><fA11 i1="03" i2="1"><s1>ALBIN (D. S.)</s1></fA11><fA11 i1="04" i2="1"><s1>RUMMEL (S. R.)</s1></fA11><fA11 i1="05" i2="1"><s1>ANDERBERG (A.)</s1></fA11><fA12 i1="01" i2="1"><s1>DHERE (Neelkanth G.)</s1><s9>ed.</s9></fA12><fA12 i1="02" i2="1"><s1>WOHLGEMUTH (John)</s1><s9>ed.</s9></fA12><fA12 i1="03" i2="1"><s1>TON (Dan T.)</s1><s9>ed.</s9></fA12><fA14 i1="01"><s1>National Renewable Energy Laboratory 1617 Cole Blvd.</s1><s2>Golden, CO, 80401</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></fA14><fA18 i1="01" i2="1"><s1>SPIE</s1><s3>USA</s3><s9>org-cong.</s9></fA18><fA20><s2>741204.1-741204.12</s2></fA20><fA21><s1>2009</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA25 i1="01"><s1>SPIE</s1><s2>Bellingham, Wash.</s2></fA25><fA26 i1="01"><s0>978-0-8194-7702-6</s0></fA26><fA26 i1="02"><s0>0-8194-7702-8</s0></fA26><fA43 i1="01"><s1>INIST</s1><s2>21760</s2><s5>354000172986480030</s5></fA43><fA44><s0>0000</s0><s1>© 2010 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>17 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>10-0114140</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Proceedings of SPIE, the International Society for Optical Engineering</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>Polycrystalline photovoltaic (PV) modules containing cadmium telluride (CdTe) or copper indium gallium diselenide (CIGS) thin film materials can exhibit substantial transient or metastable current-voltage (I-V) characteristics depending on prior exposure history. Transient I-V phenomena confound the accurate determination of module performance, their reliability, and their measured temperature coefficients, which can introduce error in energy ratings models or service-lifetime predictions. Indeed, for either of these two technologies, a unique performance metric may be illusory without first specifying recent exposure or state-even at standard test conditions. The current standard preconditioning procedure for thin-film PV modules was designed for amorphous silicon (a-Si), and is likely inadequate for CdTe and CIGS. For a-Si, the Staebler-Wronski effect is known to result from defects, created via breaking of weak silicon bonds or light-activated trapping at the device junction, occurring rapidly upon light-exposure. For CdTe and CIGS devices, there is less agreement on the causes of metastable behavior. The data suggests that either deep-trapping of charge carriers, or the migration and/or electronic activation of copper may be responsible. Because these are quite disparate mechanisms, we suspect that there may be a more practical preconditioning procedure that can be employed prior to accurate performance testing for CdTe and CIGS modules. 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