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Theoretical study on InxGa1-xN/S hetero-junction solar cells

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Theoretical study on InxGa1-xN/S hetero-junction solar cells

Auteurs : RBID : Pascal:10-0099789

Descripteurs français

Pascal (Inist)
- Cellule solaire, Indium Gallium Nitrure, Hétérojonction, Etude théorique, Performance.

English descriptors

KwdEn :
- Heterojunction, Indium Gallium Nitrides, Performance, Solar cell, Theoretical study.

Abstract

In this paper, we designed series of In_xGa_1-xN/Sihetero-junction solar cells. Key properties of In_xGa_1-xN/Sisolar cells (single junction, double junctions) are simulated by using AMPS-1D software, including I-V characteristic, conversion efficiency, band structure etc. The In_xGa_1-xN/Sihetero-junction solar cells are compared with the performances of Si homo-junction solar cells. We also discuss some sensitive performance-related parameters in the preparation of InGaN/Si hetero-junction solar cells.

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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Theoretical study on In<sub>x</sub>
Ga<sub>1-x</sub>
N/S hetero-junction solar cells</title>
<author><name>JIANGONG LI</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>College of Materials Science and Engineering, Guangxi University</s1>
<s2>Nanning, 530004</s2>
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<country>République populaire de Chine</country>
<wicri:noRegion>Nanning, 530004</wicri:noRegion>
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</author>
<author><name>FUBIN LI</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>College of Physical Science and Technology, Guangxi University</s1>
<s2>Nanning, 530004</s2>
<s3>CHN</s3>
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<country>République populaire de Chine</country>
<wicri:noRegion>Nanning, 530004</wicri:noRegion>
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<author><name>SHUO LIN</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>College of Physical Science and Technology, Guangxi University</s1>
<s2>Nanning, 530004</s2>
<s3>CHN</s3>
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<country>République populaire de Chine</country>
<wicri:noRegion>Nanning, 530004</wicri:noRegion>
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</author>
<author><name>SHUIKU ZHONG</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>College of Physical Science and Technology, Guangxi University</s1>
<s2>Nanning, 530004</s2>
<s3>CHN</s3>
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<country>République populaire de Chine</country>
<wicri:noRegion>Nanning, 530004</wicri:noRegion>
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<author><name>YIMING WEI</name>
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<s2>Nanning, 530004</s2>
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<author><name>XIANGHAI MEN</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>College of Materials Science and Engineering, Guangxi University</s1>
<s2>Nanning, 530004</s2>
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<country>République populaire de Chine</country>
<wicri:noRegion>Nanning, 530004</wicri:noRegion>
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<author><name>XIAOMING SHEN</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Key laboratory of new processing technology for nonferrous metals and advanced materials (Ministry of Education), Guangxi University</s1>
<s2>Nanning, 530004</s2>
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<country>République populaire de Chine</country>
<wicri:noRegion>Nanning, 530004</wicri:noRegion>
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<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>College of Materials Science and Engineering, Guangxi University</s1>
<s2>Nanning, 530004</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>6 aut.</sZ>
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<country>République populaire de Chine</country>
<wicri:noRegion>Nanning, 530004</wicri:noRegion>
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<title level="j" type="abbreviated">Proc. SPIE Int. Soc. Opt. Eng.</title>
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<front><div type="abstract" xml:lang="en">In this paper, we designed series of In<sub>x</sub>
Ga<sub>1-x</sub>
N/Sihetero-junction solar cells. Key properties of In<sub>x</sub>
Ga<sub>1-x</sub>
N/Sisolar cells (single junction, double junctions) are simulated by using AMPS-1D software, including I-V characteristic, conversion efficiency, band structure etc. The In<sub>x</sub>
Ga<sub>1-x</sub>
N/Sihetero-junction solar cells are compared with the performances of Si homo-junction solar cells. We also discuss some sensitive performance-related parameters in the preparation of InGaN/Si hetero-junction solar cells.</div>
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N/Sihetero-junction solar cells. Key properties of In<sub>x</sub>
Ga<sub>1-x</sub>
N/Sisolar cells (single junction, double junctions) are simulated by using AMPS-1D software, including I-V characteristic, conversion efficiency, band structure etc. The In<sub>x</sub>
Ga<sub>1-x</sub>
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Theoretical study on InxGa1-xN/S hetero-junction solar cells

Theoretical study on InxGa1-xN/S hetero-junction solar cells

Descripteurs français

English descriptors

Abstract

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Links to Exploration step

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Pour manipuler ce document sous Unix (Dilib)

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