IndiumV3, Main, Repository, bibRecord, 003F47

In-situ observations of dissolution process of GaSb into InSb melt by X-ray penetration method

Identifieur interne : 003F47 ( Main/Repository ); précédent : 003F46; suivant : 003F48

In-situ observations of dissolution process of GaSb into InSb melt by X-ray penetration method

Auteurs : RBID : Pascal:10-0464201

Descripteurs français

Pascal (Inist)
- Dissolution, Semiconducteur III-V, Composé III-V, Germe cristallin, Structure sandwich, Semiconducteur II-VI, Capteur, Détecteur, Dépendance temps, Gallium, Distribution concentration, Etalonnage, Spectrométrie dispersive, Dépendance température, Antimoniure de gallium, Antimoniure d'indium, Tellurure de cadmium, Transfert masse, Croissance cristalline, Méthode en solution, Composé du gallium, GaSb, InSb, CdTe, 6475, 8110, 8110D.

English descriptors

KwdEn :
- Cadmium tellurides, Calibration, Concentration distribution, Crystal growth, Crystal seeds, Detectors, Dispersive spectrometry, Dissolution, Gallium, Gallium antimonides, Gallium compounds, Growth from solution, II-VI semiconductors, III-V compound, III-V semiconductors, Indium antimonides, Mass transfer, Sandwich structures, Sensors, Temperature dependence, Time dependence.

Abstract

Dissolution process of GaSb into InSb melt was observed by an X-ray penetration method. The intensity of X-rays penetrated through the rectangular shaped GaSb (seed)/InSb/GaSb (feed) sandwich sample was recorded by the CdTe line sensor detector. The penetrated X-ray intensities and images of the sample were obtained as a function of time and temperature. The gallium (Ga) composition profile of the sample was calculated as a function of time by making the calibration line with the penetrated X-ray intensities of GaSb and InSb standard samples. The calculated Ga composition profile of the grown sample agreed well with the data measured by energy dispersive X-ray spectroscopy analysis. The result suggested that lower GaSb seed dissolved faster than upper GaSb feed despite of the low temperature at the lower GaSb seed. It clearly indicates that the solutal transport induced by gravity strongly affects the dissolution process.

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Pascal:10-0464201

Le document en format XML

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<term>Crystal seeds</term>
<term>Detectors</term>
<term>Dispersive spectrometry</term>
<term>Dissolution</term>
<term>Gallium</term>
<term>Gallium antimonides</term>
<term>Gallium compounds</term>
<term>Growth from solution</term>
<term>II-VI semiconductors</term>
<term>III-V compound</term>
<term>III-V semiconductors</term>
<term>Indium antimonides</term>
<term>Mass transfer</term>
<term>Sandwich structures</term>
<term>Sensors</term>
<term>Temperature dependence</term>
<term>Time dependence</term>
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<keywords scheme="Pascal" xml:lang="fr"><term>Dissolution</term>
<term>Semiconducteur III-V</term>
<term>Composé III-V</term>
<term>Germe cristallin</term>
<term>Structure sandwich</term>
<term>Semiconducteur II-VI</term>
<term>Capteur</term>
<term>Détecteur</term>
<term>Dépendance temps</term>
<term>Gallium</term>
<term>Distribution concentration</term>
<term>Etalonnage</term>
<term>Spectrométrie dispersive</term>
<term>Dépendance température</term>
<term>Antimoniure de gallium</term>
<term>Antimoniure d'indium</term>
<term>Tellurure de cadmium</term>
<term>Transfert masse</term>
<term>Croissance cristalline</term>
<term>Méthode en solution</term>
<term>Composé du gallium</term>
<term>GaSb</term>
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<term>CdTe</term>
<term>6475</term>
<term>8110</term>
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<front><div type="abstract" xml:lang="en">Dissolution process of GaSb into InSb melt was observed by an X-ray penetration method. The intensity of X-rays penetrated through the rectangular shaped GaSb (seed)/InSb/GaSb (feed) sandwich sample was recorded by the CdTe line sensor detector. The penetrated X-ray intensities and images of the sample were obtained as a function of time and temperature. The gallium (Ga) composition profile of the sample was calculated as a function of time by making the calibration line with the penetrated X-ray intensities of GaSb and InSb standard samples. The calculated Ga composition profile of the grown sample agreed well with the data measured by energy dispersive X-ray spectroscopy analysis. The result suggested that lower GaSb seed dissolved faster than upper GaSb feed despite of the low temperature at the lower GaSb seed. It clearly indicates that the solutal transport induced by gravity strongly affects the dissolution process.</div>
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<fA08 i1="01" i2="1" l="ENG"><s1>In-situ observations of dissolution process of GaSb into InSb melt by X-ray penetration method</s1>
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<fA11 i1="01" i2="1"><s1>RAJESH (G.)</s1>
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<fA11 i1="02" i2="1"><s1>ARIVANANDHAN (M.)</s1>
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<fA14 i1="01"><s1>Research Institute of Electronics, Shizuoka University, Johoku 3-5-1, Naka-ku</s1>
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<fA14 i1="03"><s1>Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency, 3-1-1 Yoshinodai</s1>
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<fC01 i1="01" l="ENG"><s0>Dissolution process of GaSb into InSb melt was observed by an X-ray penetration method. The intensity of X-rays penetrated through the rectangular shaped GaSb (seed)/InSb/GaSb (feed) sandwich sample was recorded by the CdTe line sensor detector. The penetrated X-ray intensities and images of the sample were obtained as a function of time and temperature. The gallium (Ga) composition profile of the sample was calculated as a function of time by making the calibration line with the penetrated X-ray intensities of GaSb and InSb standard samples. The calculated Ga composition profile of the grown sample agreed well with the data measured by energy dispersive X-ray spectroscopy analysis. The result suggested that lower GaSb seed dissolved faster than upper GaSb feed despite of the low temperature at the lower GaSb seed. It clearly indicates that the solutal transport induced by gravity strongly affects the dissolution process.</s0>
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<s5>01</s5>
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<s5>03</s5>
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<s5>04</s5>
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<s5>06</s5>
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<s5>07</s5>
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<s5>09</s5>
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<fC03 i1="10" i2="3" l="ENG"><s0>Gallium</s0>
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<s5>10</s5>
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<s5>11</s5>
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<s5>11</s5>
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<s5>11</s5>
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<s5>12</s5>
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<s2>NK</s2>
<s5>15</s5>
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<s2>NK</s2>
<s5>16</s5>
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<s5>16</s5>
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<s5>31</s5>
</fC03>
<fC03 i1="21" i2="3" l="FRE"><s0>Composé du gallium</s0>
<s5>32</s5>
</fC03>
<fC03 i1="21" i2="3" l="ENG"><s0>Gallium compounds</s0>
<s5>32</s5>
</fC03>
<fC03 i1="22" i2="3" l="FRE"><s0>GaSb</s0>
<s4>INC</s4>
<s5>46</s5>
</fC03>
<fC03 i1="23" i2="3" l="FRE"><s0>InSb</s0>
<s4>INC</s4>
<s5>47</s5>
</fC03>
<fC03 i1="24" i2="3" l="FRE"><s0>CdTe</s0>
<s4>INC</s4>
<s5>48</s5>
</fC03>
<fC03 i1="25" i2="3" l="FRE"><s0>6475</s0>
<s4>INC</s4>
<s5>71</s5>
</fC03>
<fC03 i1="26" i2="3" l="FRE"><s0>8110</s0>
<s4>INC</s4>
<s5>72</s5>
</fC03>
<fC03 i1="27" i2="3" l="FRE"><s0>8110D</s0>
<s4>INC</s4>
<s5>73</s5>
</fC03>
<fN21><s1>305</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
</fN44>
<fN82><s1>OTO</s1>
</fN82>
</pA>
</standard>
</inist>
</record>

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   |texte=   In-situ observations of dissolution process of GaSb into InSb melt by X-ray penetration method
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In-situ observations of dissolution process of GaSb into InSb melt by X-ray penetration method

In-situ observations of dissolution process of GaSb into InSb melt by X-ray penetration method

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