Outcoupling efficiency of organic light emitting diodes and the effect of ITO thickness
Identifieur interne : 003B58 ( Main/Repository ); précédent : 003B57; suivant : 003B59Outcoupling efficiency of organic light emitting diodes and the effect of ITO thickness
Auteurs : RBID : Pascal:10-0307933Descripteurs français
- Pascal (Inist)
English descriptors
- KwdEn :
Abstract
Outcoupling efficiency of bottom emission organic light emitting diodes (OLEDs) have been analyzed using a model (Adv. Chem. Phys. 37(1987) 1, [17]) based on classical electromagnetic theory with a full vectorial approach. The analyses presented in this study take into account many factors, including the thickness of the ITO layer. Maximum outcoupling efficiencies over 27% and 30% are achievable if thin ITO layers in the range of 50-70 nm and 50-100 nm are used for blue and green phosphorescent OLEDs, respectively. Even higher efficiencies of 29% for the blue and 31.6% for the green OLED can be obtained if we use thicker organic layers supporting two antinodes suggesting that phosphorescent OLEDs can have a much higher external quantum efficiency than 20%.
Links toward previous steps (curation, corpus...)
- to stream Main, to step Corpus: 004268
Links to Exploration step
Pascal:10-0307933Le document en format XML
<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Outcoupling efficiency of organic light emitting diodes and the effect of ITO thickness</title><author><name sortKey="Kim, Sei Yong" uniqKey="Kim S">Sei-Yong Kim</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Materials Science and Engineering and Center for OLEDs, Seoul National University</s1><s2>Seoul 151-744</s2><s3>KOR</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country>Corée du Sud</country><placeName><settlement type="city">Séoul</settlement></placeName></affiliation></author><author><name sortKey="Kim, Jang Joo" uniqKey="Kim J">Jang-Joo Kim</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Materials Science and Engineering and Center for OLEDs, Seoul National University</s1><s2>Seoul 151-744</s2><s3>KOR</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country>Corée du Sud</country><placeName><settlement type="city">Séoul</settlement></placeName></affiliation></author></titleStmt><publicationStmt><idno type="inist">10-0307933</idno><date when="2010">2010</date><idno type="stanalyst">PASCAL 10-0307933 INIST</idno><idno type="RBID">Pascal:10-0307933</idno><idno type="wicri:Area/Main/Corpus">004268</idno><idno type="wicri:Area/Main/Repository">003B58</idno></publicationStmt><seriesStmt><idno type="ISSN">1566-1199</idno><title level="j" type="abbreviated">Org. electron. : (Print)</title><title level="j" type="main">Organic electronics : (Print)</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Doped materials</term><term>ITO layers</term><term>Indium oxide</term><term>Organic electronics</term><term>Organic light emitting diodes</term><term>Performance evaluation</term><term>Phosphorescence</term><term>Quantum yield</term><term>Thin film</term><term>Tin addition</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Evaluation performance</term><term>Diode électroluminescente organique</term><term>Addition étain</term><term>Couche ITO</term><term>Phosphorescence</term><term>Rendement quantique</term><term>Oxyde d'indium</term><term>Couche mince</term><term>Electronique organique</term><term>Matériau dopé</term><term>ITO</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Outcoupling efficiency of bottom emission organic light emitting diodes (OLEDs) have been analyzed using a model (Adv. Chem. Phys. 37(1987) 1, [17]) based on classical electromagnetic theory with a full vectorial approach. The analyses presented in this study take into account many factors, including the thickness of the ITO layer. Maximum outcoupling efficiencies over 27% and 30% are achievable if thin ITO layers in the range of 50-70 nm and 50-100 nm are used for blue and green phosphorescent OLEDs, respectively. Even higher efficiencies of 29% for the blue and 31.6% for the green OLED can be obtained if we use thicker organic layers supporting two antinodes suggesting that phosphorescent OLEDs can have a much higher external quantum efficiency than 20%.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1566-1199</s0></fA01><fA03 i2="1"><s0>Org. electron. : (Print)</s0></fA03><fA05><s2>11</s2></fA05><fA06><s2>6</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Outcoupling efficiency of organic light emitting diodes and the effect of ITO thickness</s1></fA08><fA11 i1="01" i2="1"><s1>KIM (Sei-Yong)</s1></fA11><fA11 i1="02" i2="1"><s1>KIM (Jang-Joo)</s1></fA11><fA14 i1="01"><s1>Department of Materials Science and Engineering and Center for OLEDs, Seoul National University</s1><s2>Seoul 151-744</s2><s3>KOR</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></fA14><fA20><s1>1010-1015</s1></fA20><fA21><s1>2010</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>27255</s2><s5>354000170470110060</s5></fA43><fA44><s0>0000</s0><s1>© 2010 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>34 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>10-0307933</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Organic electronics : (Print)</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>Outcoupling efficiency of bottom emission organic light emitting diodes (OLEDs) have been analyzed using a model (Adv. Chem. Phys. 37(1987) 1, [17]) based on classical electromagnetic theory with a full vectorial approach. The analyses presented in this study take into account many factors, including the thickness of the ITO layer. Maximum outcoupling efficiencies over 27% and 30% are achievable if thin ITO layers in the range of 50-70 nm and 50-100 nm are used for blue and green phosphorescent OLEDs, respectively. Even higher efficiencies of 29% for the blue and 31.6% for the green OLED can be obtained if we use thicker organic layers supporting two antinodes suggesting that phosphorescent OLEDs can have a much higher external quantum efficiency than 20%.</s0></fC01><fC02 i1="01" i2="X"><s0>001D03F15</s0></fC02><fC03 i1="01" i2="X" l="FRE"><s0>Evaluation performance</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="ENG"><s0>Performance evaluation</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="SPA"><s0>Evaluación prestación</s0><s5>01</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Diode électroluminescente organique</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Organic light emitting diodes</s0><s5>02</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Addition étain</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>Tin addition</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="SPA"><s0>Adición estaño</s0><s5>03</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Couche ITO</s0><s5>04</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>ITO layers</s0><s5>04</s5></fC03><fC03 i1="05" i2="X" l="FRE"><s0>Phosphorescence</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="ENG"><s0>Phosphorescence</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="SPA"><s0>Fosforescencia</s0><s5>05</s5></fC03><fC03 i1="06" i2="X" l="FRE"><s0>Rendement quantique</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="ENG"><s0>Quantum yield</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="SPA"><s0>Rendimiento quántico</s0><s5>06</s5></fC03><fC03 i1="07" i2="X" l="FRE"><s0>Oxyde d'indium</s0><s5>22</s5></fC03><fC03 i1="07" i2="X" l="ENG"><s0>Indium oxide</s0><s5>22</s5></fC03><fC03 i1="07" i2="X" l="SPA"><s0>Indio óxido</s0><s5>22</s5></fC03><fC03 i1="08" i2="X" l="FRE"><s0>Couche mince</s0><s5>23</s5></fC03><fC03 i1="08" i2="X" l="ENG"><s0>Thin film</s0><s5>23</s5></fC03><fC03 i1="08" i2="X" l="SPA"><s0>Capa fina</s0><s5>23</s5></fC03><fC03 i1="09" i2="X" l="FRE"><s0>Electronique organique</s0><s5>46</s5></fC03><fC03 i1="09" i2="X" l="ENG"><s0>Organic electronics</s0><s5>46</s5></fC03><fC03 i1="09" i2="X" l="SPA"><s0>Electrónica orgánica</s0><s5>46</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Matériau dopé</s0><s5>47</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Doped materials</s0><s5>47</s5></fC03><fC03 i1="11" i2="X" l="FRE"><s0>ITO</s0><s4>INC</s4><s5>82</s5></fC03><fC07 i1="01" i2="X" l="FRE"><s0>Dispositif optoélectronique</s0><s5>07</s5></fC07><fC07 i1="01" i2="X" l="ENG"><s0>Optoelectronic device</s0><s5>07</s5></fC07><fC07 i1="01" i2="X" l="SPA"><s0>Dispositivo optoelectrónico</s0><s5>07</s5></fC07><fN21><s1>193</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
EXPLOR_STEP=IndiumV3/Data/Main/Repository
HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 003B58 | SxmlIndent | more
Ou
HfdSelect -h $EXPLOR_AREA/Data/Main/Repository/biblio.hfd -nk 003B58 | SxmlIndent | more
Pour mettre un lien sur cette page dans le réseau Wicri
{{Explor lien
|wiki= *** parameter Area/wikiCode missing ***
|area= IndiumV3
|flux= Main
|étape= Repository
|type= RBID
|clé= Pascal:10-0307933
|texte= Outcoupling efficiency of organic light emitting diodes and the effect of ITO thickness
}}
| This area was generated with Dilib version V0.5.77. |  |