IndiumV3, Main, Repository, bibRecord, 003A96

Plastic substrate with gas barrier layer and transparent conductive oxide thin film for flexible displays

Identifieur interne : 003A96 ( Main/Repository ); précédent : 003A95; suivant : 003A97

Plastic substrate with gas barrier layer and transparent conductive oxide thin film for flexible displays

Auteurs : RBID : Pascal:10-0218948

Descripteurs français

Pascal (Inist)
- Couche barrière, Revêtement conducteur, Couche mince, Couche mince transparente, Biréfringence, Epaisseur couche, Module élasticité, Retrait, Rugosité, Pulvérisation cathodique, Dépôt physique phase vapeur, Vapeur eau, Humidité, Couche mince amorphe, Carbonate polymère, Oxyde de silicium, Oxyde d'indium, Oxyde de zinc, Pulvérisation irradiation, Facteur transmission, Conductivité électrique, Substrat plastique, SiOx, 6855J, 8115C, 7361.

English descriptors

KwdEn :
- Amorphous thin film, Barrier layer, Birefringence, Cathode sputtering, Conductive coating, Elastic modulus, Electrical conductivity, Humidity, Indium oxide, Layer thickness, Physical vapor deposition, Polycarbonates, Roughness, Shrinkage, Silicon oxides, Sputtering, Steam, Thin films, Transmittance, Transparent thin film, Zinc oxide.

Abstract

A novel plastic substrate for flexible displays was developed. The substrate consisted of a polycarbonate (PC) base film coated with a gas barrier layer and a transparent conductive thin film. PC with ultra-low intrinsic birefringence and high temperature dimensional stability was developed for the base film The retardation of the PC base film was less than 1 nm at a wavelength of 550 nm (film thickness,120 μm). Even at 180 °C, the elastic modulus was 2 GPa, and thermal shrinkage was less than 0.01%. The surface roughness of the PC base film was less than 0.5 nm. A silicon oxide (SiO_x) gas barrier layer was deposited on the PC base film by a roll-to-roll DC magnetron reactive sputtering method. The water vapor transmission rate of the SiO_x film was less than 0.05 g/ m²/day at 40 °C and 100% relative humidity (RH), and the permeation of oxygen was less than 0.5 cc/m² day atm at 40 °C and 90% RH. As the transparent conductive thin film, amorphous indium zinc oxide was deposited on the SiO_x by sputtering. The transmittance was 87% and the resistivity was 3.5 x 10^-4ohm cm.

Links toward previous steps (curation, corpus...)

to stream Main, to step Corpus: 004601

Links to Exploration step

Pascal:10-0218948

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Plastic substrate with gas barrier layer and transparent conductive oxide thin film for flexible displays</title>
<author><name sortKey="Hanada, Toru" uniqKey="Hanada T">Toru Hanada</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Electronics Material Research Laboratories, Teijin Ltd., 4-3-2 Asahigaoka</s1>
<s2>Hino, Tokyo 191</s2>
<s3>JPN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>Japon</country>
<wicri:noRegion>Hino, Tokyo 191</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Negishi, Tuyoto" uniqKey="Negishi T">Tuyoto Negishi</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Electronics Material Research Laboratories, Teijin Ltd., 4-3-2 Asahigaoka</s1>
<s2>Hino, Tokyo 191</s2>
<s3>JPN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>Japon</country>
<wicri:noRegion>Hino, Tokyo 191</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Shiroishi, Isao" uniqKey="Shiroishi I">Isao Shiroishi</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Electronics Material Research Laboratories, Teijin Ltd., 4-3-2 Asahigaoka</s1>
<s2>Hino, Tokyo 191</s2>
<s3>JPN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>Japon</country>
<wicri:noRegion>Hino, Tokyo 191</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Shiro, Takashi" uniqKey="Shiro T">Takashi Shiro</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Electronics Material Research Laboratories, Teijin Ltd., 4-3-2 Asahigaoka</s1>
<s2>Hino, Tokyo 191</s2>
<s3>JPN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>Japon</country>
<wicri:noRegion>Hino, Tokyo 191</wicri:noRegion>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">10-0218948</idno>
<date when="2010">2010</date>
<idno type="stanalyst">PASCAL 10-0218948 INIST</idno>
<idno type="RBID">Pascal:10-0218948</idno>
<idno type="wicri:Area/Main/Corpus">004601</idno>
<idno type="wicri:Area/Main/Repository">003A96</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">0040-6090</idno>
<title level="j" type="abbreviated">Thin solid films</title>
<title level="j" type="main">Thin solid films</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Amorphous thin film</term>
<term>Barrier layer</term>
<term>Birefringence</term>
<term>Cathode sputtering</term>
<term>Conductive coating</term>
<term>Elastic modulus</term>
<term>Electrical conductivity</term>
<term>Humidity</term>
<term>Indium oxide</term>
<term>Layer thickness</term>
<term>Physical vapor deposition</term>
<term>Polycarbonates</term>
<term>Roughness</term>
<term>Shrinkage</term>
<term>Silicon oxides</term>
<term>Sputtering</term>
<term>Steam</term>
<term>Thin films</term>
<term>Transmittance</term>
<term>Transparent thin film</term>
<term>Zinc oxide</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Couche barrière</term>
<term>Revêtement conducteur</term>
<term>Couche mince</term>
<term>Couche mince transparente</term>
<term>Biréfringence</term>
<term>Epaisseur couche</term>
<term>Module élasticité</term>
<term>Retrait</term>
<term>Rugosité</term>
<term>Pulvérisation cathodique</term>
<term>Dépôt physique phase vapeur</term>
<term>Vapeur eau</term>
<term>Humidité</term>
<term>Couche mince amorphe</term>
<term>Carbonate polymère</term>
<term>Oxyde de silicium</term>
<term>Oxyde d'indium</term>
<term>Oxyde de zinc</term>
<term>Pulvérisation irradiation</term>
<term>Facteur transmission</term>
<term>Conductivité électrique</term>
<term>Substrat plastique</term>
<term>SiOx</term>
<term>6855J</term>
<term>8115C</term>
<term>7361</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">A novel plastic substrate for flexible displays was developed. The substrate consisted of a polycarbonate (PC) base film coated with a gas barrier layer and a transparent conductive thin film. PC with ultra-low intrinsic birefringence and high temperature dimensional stability was developed for the base film The retardation of the PC base film was less than 1 nm at a wavelength of 550 nm (film thickness,120 μm). Even at 180 °C, the elastic modulus was 2 GPa, and thermal shrinkage was less than 0.01%. The surface roughness of the PC base film was less than 0.5 nm. A silicon oxide (SiO<sub>x</sub>
) gas barrier layer was deposited on the PC base film by a roll-to-roll DC magnetron reactive sputtering method. The water vapor transmission rate of the SiO<sub>x</sub>
 film was less than 0.05 g/ m<sup>2</sup>
/day at 40 °C and 100% relative humidity (RH), and the permeation of oxygen was less than 0.5 cc/m<sup>2</sup>
 day atm at 40 °C and 90% RH. As the transparent conductive thin film, amorphous indium zinc oxide was deposited on the SiO<sub>x</sub>
 by sputtering. The transmittance was 87% and the resistivity was 3.5 x 10<sup>-4 </sup>
ohm cm.</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0040-6090</s0>
</fA01>
<fA02 i1="01"><s0>THSFAP</s0>
</fA02>
<fA03 i2="1"><s0>Thin solid films</s0>
</fA03>
<fA05><s2>518</s2>
</fA05>
<fA06><s2>11</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG"><s1>Plastic substrate with gas barrier layer and transparent conductive oxide thin film for flexible displays</s1>
</fA08>
<fA09 i1="01" i2="1" l="ENG"><s1>6th International Symposium on Transparent Oxide Thin Films for Electronics Optics</s1>
</fA09>
<fA11 i1="01" i2="1"><s1>HANADA (Toru)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>NEGISHI (Tuyoto)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>SHIROISHI (Isao)</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>SHIRO (Takashi)</s1>
</fA11>
<fA12 i1="01" i2="1"><s1>HOSONO (Hideo)</s1>
<s9>ed.</s9>
</fA12>
<fA12 i1="02" i2="1"><s1>SHIGESATO (Yuzo)</s1>
<s9>ed.</s9>
</fA12>
<fA12 i1="03" i2="1"><s1>GINLEY (David S.)</s1>
<s9>ed.</s9>
</fA12>
<fA14 i1="01"><s1>Electronics Material Research Laboratories, Teijin Ltd., 4-3-2 Asahigaoka</s1>
<s2>Hino, Tokyo 191</s2>
<s3>JPN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</fA14>
<fA15 i1="01"><s1>Tokyo Institute of Technology</s1>
<s3>JPN</s3>
<sZ>1 aut.</sZ>
</fA15>
<fA15 i1="02"><s1>Aoyama Gakuin University</s1>
<s3>JPN</s3>
<sZ>2 aut.</sZ>
</fA15>
<fA15 i1="03"><s1>National Renewable Energy Laboratory</s1>
<s3>USA</s3>
<sZ>3 aut.</sZ>
</fA15>
<fA20><s1>3089-3092</s1>
</fA20>
<fA21><s1>2010</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>13597</s2>
<s5>354000189688350390</s5>
</fA43>
<fA44><s0>0000</s0>
<s1>© 2010 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45><s0>6 ref.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>10-0218948</s0>
</fA47>
<fA60><s1>P</s1>
<s2>C</s2>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Thin solid films</s0>
</fA64>
<fA66 i1="01"><s0>NLD</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>A novel plastic substrate for flexible displays was developed. The substrate consisted of a polycarbonate (PC) base film coated with a gas barrier layer and a transparent conductive thin film. PC with ultra-low intrinsic birefringence and high temperature dimensional stability was developed for the base film The retardation of the PC base film was less than 1 nm at a wavelength of 550 nm (film thickness,120 μm). Even at 180 °C, the elastic modulus was 2 GPa, and thermal shrinkage was less than 0.01%. The surface roughness of the PC base film was less than 0.5 nm. A silicon oxide (SiO<sub>x</sub>
) gas barrier layer was deposited on the PC base film by a roll-to-roll DC magnetron reactive sputtering method. The water vapor transmission rate of the SiO<sub>x</sub>
 film was less than 0.05 g/ m<sup>2</sup>
/day at 40 °C and 100% relative humidity (RH), and the permeation of oxygen was less than 0.5 cc/m<sup>2</sup>
 day atm at 40 °C and 90% RH. As the transparent conductive thin film, amorphous indium zinc oxide was deposited on the SiO<sub>x</sub>
 by sputtering. The transmittance was 87% and the resistivity was 3.5 x 10<sup>-4 </sup>
ohm cm.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B60H55J</s0>
</fC02>
<fC02 i1="02" i2="3"><s0>001B80A15C</s0>
</fC02>
<fC02 i1="03" i2="3"><s0>001B70C61</s0>
</fC02>
<fC02 i1="04" i2="X"><s0>001D03C</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE"><s0>Couche barrière</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="3" l="ENG"><s0>Barrier layer</s0>
<s5>01</s5>
</fC03>
<fC03 i1="02" i2="X" l="FRE"><s0>Revêtement conducteur</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="X" l="ENG"><s0>Conductive coating</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="X" l="SPA"><s0>Revestimiento conductor</s0>
<s5>02</s5>
</fC03>
<fC03 i1="03" i2="3" l="FRE"><s0>Couche mince</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="3" l="ENG"><s0>Thin films</s0>
<s5>03</s5>
</fC03>
<fC03 i1="04" i2="X" l="FRE"><s0>Couche mince transparente</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="X" l="ENG"><s0>Transparent thin film</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="X" l="SPA"><s0>Película transparente</s0>
<s5>04</s5>
</fC03>
<fC03 i1="05" i2="3" l="FRE"><s0>Biréfringence</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="3" l="ENG"><s0>Birefringence</s0>
<s5>05</s5>
</fC03>
<fC03 i1="06" i2="X" l="FRE"><s0>Epaisseur couche</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="X" l="ENG"><s0>Layer thickness</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="X" l="SPA"><s0>Espesor capa</s0>
<s5>06</s5>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Module élasticité</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>Elastic modulus</s0>
<s5>07</s5>
</fC03>
<fC03 i1="08" i2="3" l="FRE"><s0>Retrait</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="3" l="ENG"><s0>Shrinkage</s0>
<s5>08</s5>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>Rugosité</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="3" l="ENG"><s0>Roughness</s0>
<s5>09</s5>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>Pulvérisation cathodique</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="3" l="ENG"><s0>Cathode sputtering</s0>
<s5>10</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Dépôt physique phase vapeur</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="3" l="ENG"><s0>Physical vapor deposition</s0>
<s5>11</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>Vapeur eau</s0>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="3" l="ENG"><s0>Steam</s0>
<s5>12</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>Humidité</s0>
<s5>13</s5>
</fC03>
<fC03 i1="13" i2="3" l="ENG"><s0>Humidity</s0>
<s5>13</s5>
</fC03>
<fC03 i1="14" i2="X" l="FRE"><s0>Couche mince amorphe</s0>
<s5>14</s5>
</fC03>
<fC03 i1="14" i2="X" l="ENG"><s0>Amorphous thin film</s0>
<s5>14</s5>
</fC03>
<fC03 i1="14" i2="X" l="SPA"><s0>Capa fina amorfa</s0>
<s5>14</s5>
</fC03>
<fC03 i1="15" i2="3" l="FRE"><s0>Carbonate polymère</s0>
<s2>NK</s2>
<s5>15</s5>
</fC03>
<fC03 i1="15" i2="3" l="ENG"><s0>Polycarbonates</s0>
<s2>NK</s2>
<s5>15</s5>
</fC03>
<fC03 i1="16" i2="3" l="FRE"><s0>Oxyde de silicium</s0>
<s2>NK</s2>
<s5>16</s5>
</fC03>
<fC03 i1="16" i2="3" l="ENG"><s0>Silicon oxides</s0>
<s2>NK</s2>
<s5>16</s5>
</fC03>
<fC03 i1="17" i2="X" l="FRE"><s0>Oxyde d'indium</s0>
<s5>17</s5>
</fC03>
<fC03 i1="17" i2="X" l="ENG"><s0>Indium oxide</s0>
<s5>17</s5>
</fC03>
<fC03 i1="17" i2="X" l="SPA"><s0>Indio óxido</s0>
<s5>17</s5>
</fC03>
<fC03 i1="18" i2="X" l="FRE"><s0>Oxyde de zinc</s0>
<s5>18</s5>
</fC03>
<fC03 i1="18" i2="X" l="ENG"><s0>Zinc oxide</s0>
<s5>18</s5>
</fC03>
<fC03 i1="18" i2="X" l="SPA"><s0>Zinc óxido</s0>
<s5>18</s5>
</fC03>
<fC03 i1="19" i2="3" l="FRE"><s0>Pulvérisation irradiation</s0>
<s5>29</s5>
</fC03>
<fC03 i1="19" i2="3" l="ENG"><s0>Sputtering</s0>
<s5>29</s5>
</fC03>
<fC03 i1="20" i2="X" l="FRE"><s0>Facteur transmission</s0>
<s5>30</s5>
</fC03>
<fC03 i1="20" i2="X" l="ENG"><s0>Transmittance</s0>
<s5>30</s5>
</fC03>
<fC03 i1="20" i2="X" l="SPA"><s0>Factor transmisión</s0>
<s5>30</s5>
</fC03>
<fC03 i1="21" i2="3" l="FRE"><s0>Conductivité électrique</s0>
<s5>31</s5>
</fC03>
<fC03 i1="21" i2="3" l="ENG"><s0>Electrical conductivity</s0>
<s5>31</s5>
</fC03>
<fC03 i1="22" i2="3" l="FRE"><s0>Substrat plastique</s0>
<s4>INC</s4>
<s5>46</s5>
</fC03>
<fC03 i1="23" i2="3" l="FRE"><s0>SiOx</s0>
<s4>INC</s4>
<s5>47</s5>
</fC03>
<fC03 i1="24" i2="3" l="FRE"><s0>6855J</s0>
<s4>INC</s4>
<s5>71</s5>
</fC03>
<fC03 i1="25" i2="3" l="FRE"><s0>8115C</s0>
<s4>INC</s4>
<s5>72</s5>
</fC03>
<fC03 i1="26" i2="3" l="FRE"><s0>7361</s0>
<s4>INC</s4>
<s5>73</s5>
</fC03>
<fN21><s1>144</s1>
</fN21>
</pA>
<pR><fA30 i1="01" i2="1" l="ENG"><s1>International Symposium on Transparent Oxide Thin Films for Electronics Optics (TOEO-6)</s1>
<s2>6</s2>
<s3>Tokyo JPN</s3>
<s4>2009-04-15</s4>
</fA30>
</pR>
</standard>
</inist>
</record>

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Plastic substrate with gas barrier layer and transparent conductive oxide thin film for flexible displays

Plastic substrate with gas barrier layer and transparent conductive oxide thin film for flexible displays

Descripteurs français

English descriptors

Abstract

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