A microstructure for thermal conductivity measurement of conductive thin films
Identifieur interne : 003499 ( Main/Repository ); précédent : 003498; suivant : 003500A microstructure for thermal conductivity measurement of conductive thin films
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Abstract
Thermal properties of thin film materials used in the microelectro mechanical systems (MEMS) industry can differ from bulk materials. It is of great importance for numerous MEMS applications to have a precise knowledge of the thermal properties as they can influence device's final performance. We report on the design, the fabrication and the characterization of a MEMS structure for the measurement of thermal conductivity of conductive thin films. The thermal conductivity of titanium (Ti), indium tin oxide (ITO) and aluminum (Al) 500 nm thin films has been investigated and found to be 16.8 W m-1 K-1, 10.2 W m-1 K-1 and 200 W m-1 K-1, respectively, and are close to the thermal conductivity value of bulk materials.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">A microstructure for thermal conductivity measurement of conductive thin films</title><author><name sortKey="Thuau, D" uniqKey="Thuau D">D. Thuau</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Scottish Microelectronics Center, The University of Edinburgh, King's Buildings, West Mains Road</s1><s2>Edinburgh EH9 3JF</s2><s3>GBR</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Royaume-Uni</country><wicri:noRegion>Edinburgh EH9 3JF</wicri:noRegion></affiliation></author><author><name sortKey="Koymen, I" uniqKey="Koymen I">I. Koymen</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Scottish Microelectronics Center, The University of Edinburgh, King's Buildings, West Mains Road</s1><s2>Edinburgh EH9 3JF</s2><s3>GBR</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Royaume-Uni</country><wicri:noRegion>Edinburgh EH9 3JF</wicri:noRegion></affiliation></author><author><name sortKey="Cheung, R" uniqKey="Cheung R">R. Cheung</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Scottish Microelectronics Center, The University of Edinburgh, King's Buildings, West Mains Road</s1><s2>Edinburgh EH9 3JF</s2><s3>GBR</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Royaume-Uni</country><wicri:noRegion>Edinburgh EH9 3JF</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">11-0388002</idno><date when="2011">2011</date><idno type="stanalyst">PASCAL 11-0388002 INIST</idno><idno type="RBID">Pascal:11-0388002</idno><idno type="wicri:Area/Main/Corpus">002A73</idno><idno type="wicri:Area/Main/Repository">003499</idno></publicationStmt><seriesStmt><idno type="ISSN">0167-9317</idno><title level="j" type="abbreviated">Microelectron. eng.</title><title level="j" type="main">Microelectronic engineering</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium</term><term>Doped materials</term><term>Indium oxide</term><term>Mechanical system</term><term>Microelectromechanical device</term><term>Microstructure</term><term>Performance evaluation</term><term>Thermal behavior</term><term>Thermal conductivity</term><term>Thermal properties</term><term>Thin film</term><term>Tin addition</term><term>Titanium</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Microstructure</term><term>Conductivité thermique</term><term>Comportement thermique</term><term>Propriété thermique</term><term>Système mécanique</term><term>Dispositif microélectromécanique</term><term>Evaluation performance</term><term>Addition étain</term><term>Couche mince</term><term>Titane</term><term>Oxyde d'indium</term><term>Aluminium</term><term>Matériau dopé</term><term>6865</term><term>6580</term><term>ITO</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Titane</term><term>Aluminium</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Thermal properties of thin film materials used in the microelectro mechanical systems (MEMS) industry can differ from bulk materials. It is of great importance for numerous MEMS applications to have a precise knowledge of the thermal properties as they can influence device's final performance. We report on the design, the fabrication and the characterization of a MEMS structure for the measurement of thermal conductivity of conductive thin films. The thermal conductivity of titanium (Ti), indium tin oxide (ITO) and aluminum (Al) 500 nm thin films has been investigated and found to be 16.8 W m<sup>-1</sup> K<sup>-1</sup>, 10.2 W m<sup>-1</sup> K<sup>-1</sup> and 200 W m<sup>-1</sup> K<sup>-1</sup>, respectively, and are close to the thermal conductivity value of bulk materials.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0167-9317</s0></fA01><fA02 i1="01"><s0>MIENEF</s0></fA02><fA03 i2="1"><s0>Microelectron. eng.</s0></fA03><fA05><s2>88</s2></fA05><fA06><s2>8</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>A microstructure for thermal conductivity measurement of conductive thin films</s1></fA08><fA09 i1="01" i2="1" l="ENG"><s1>MNE 2010: Proceedings of the 36th International Conference on Micro- and Nano-Engineering (MNE)</s1></fA09><fA11 i1="01" i2="1"><s1>THUAU (D.)</s1></fA11><fA11 i1="02" i2="1"><s1>KOYMEN (I.)</s1></fA11><fA11 i1="03" i2="1"><s1>CHEUNG (R.)</s1></fA11><fA12 i1="01" i2="1"><s1>DE VITTORIO (Massimo)</s1><s9>ed.</s9></fA12><fA12 i1="02" i2="1"><s1>GENTILI (Massimo)</s1><s9>ed.</s9></fA12><fA12 i1="03" i2="1"><s1>GERARDINO (Annamaria)</s1><s9>ed.</s9></fA12><fA12 i1="04" i2="1"><s1>LORENZELLI (Leandro)</s1><s9>ed.</s9></fA12><fA12 i1="05" i2="1"><s1>MARTIRADONNA (Luigi)</s1><s9>ed.</s9></fA12><fA12 i1="06" i2="1"><s1>PINGUE (Pasqualantonio)</s1><s9>ed.</s9></fA12><fA14 i1="01"><s1>Scottish Microelectronics Center, The University of Edinburgh, King's Buildings, West Mains Road</s1><s2>Edinburgh EH9 3JF</s2><s3>GBR</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></fA14><fA20><s1>2408-2412</s1></fA20><fA21><s1>2011</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>20003</s2><s5>354000509484551910</s5></fA43><fA44><s0>0000</s0><s1>© 2011 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>12 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>11-0388002</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Microelectronic engineering</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>Thermal properties of thin film materials used in the microelectro mechanical systems (MEMS) industry can differ from bulk materials. It is of great importance for numerous MEMS applications to have a precise knowledge of the thermal properties as they can influence device's final performance. We report on the design, the fabrication and the characterization of a MEMS structure for the measurement of thermal conductivity of conductive thin films. The thermal conductivity of titanium (Ti), indium tin oxide (ITO) and aluminum (Al) 500 nm thin films has been investigated and found to be 16.8 W m<sup>-1</sup> K<sup>-1</sup>, 10.2 W m<sup>-1</sup> K<sup>-1</sup> and 200 W m<sup>-1</sup> K<sup>-1</sup>, respectively, and are close to the thermal conductivity value of bulk materials.</s0></fC01><fC02 i1="01" i2="X"><s0>001D03F21</s0></fC02><fC02 i1="02" i2="3"><s0>001B60H65</s0></fC02><fC02 i1="03" i2="3"><s0>001B60E80</s0></fC02><fC03 i1="01" i2="X" l="FRE"><s0>Microstructure</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="ENG"><s0>Microstructure</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="SPA"><s0>Microestructura</s0><s5>01</s5></fC03><fC03 i1="02" i2="X" l="FRE"><s0>Conductivité thermique</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="ENG"><s0>Thermal conductivity</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="SPA"><s0>Conductividad térmica</s0><s5>02</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Comportement thermique</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>Thermal behavior</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="SPA"><s0>Comportamiento térmico</s0><s5>03</s5></fC03><fC03 i1="04" i2="X" l="FRE"><s0>Propriété thermique</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="ENG"><s0>Thermal properties</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="SPA"><s0>Propiedad térmica</s0><s5>04</s5></fC03><fC03 i1="05" i2="X" l="FRE"><s0>Système mécanique</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="ENG"><s0>Mechanical system</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="SPA"><s0>Sistema mecánico</s0><s5>05</s5></fC03><fC03 i1="06" i2="X" l="FRE"><s0>Dispositif microélectromécanique</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="ENG"><s0>Microelectromechanical device</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="SPA"><s0>Dispositivo microelectromecánico</s0><s5>06</s5></fC03><fC03 i1="07" i2="X" l="FRE"><s0>Evaluation performance</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="ENG"><s0>Performance evaluation</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="SPA"><s0>Evaluación prestación</s0><s5>07</s5></fC03><fC03 i1="08" i2="X" l="FRE"><s0>Addition étain</s0><s5>08</s5></fC03><fC03 i1="08" i2="X" l="ENG"><s0>Tin addition</s0><s5>08</s5></fC03><fC03 i1="08" i2="X" l="SPA"><s0>Adición estaño</s0><s5>08</s5></fC03><fC03 i1="09" i2="X" l="FRE"><s0>Couche mince</s0><s5>22</s5></fC03><fC03 i1="09" i2="X" l="ENG"><s0>Thin film</s0><s5>22</s5></fC03><fC03 i1="09" i2="X" l="SPA"><s0>Capa fina</s0><s5>22</s5></fC03><fC03 i1="10" i2="X" l="FRE"><s0>Titane</s0><s2>NC</s2><s5>23</s5></fC03><fC03 i1="10" i2="X" l="ENG"><s0>Titanium</s0><s2>NC</s2><s5>23</s5></fC03><fC03 i1="10" i2="X" l="SPA"><s0>Titanio</s0><s2>NC</s2><s5>23</s5></fC03><fC03 i1="11" i2="X" l="FRE"><s0>Oxyde d'indium</s0><s5>24</s5></fC03><fC03 i1="11" i2="X" l="ENG"><s0>Indium oxide</s0><s5>24</s5></fC03><fC03 i1="11" i2="X" l="SPA"><s0>Indio óxido</s0><s5>24</s5></fC03><fC03 i1="12" i2="X" l="FRE"><s0>Aluminium</s0><s2>NC</s2><s2>FR</s2><s2>FX</s2><s5>25</s5></fC03><fC03 i1="12" i2="X" l="ENG"><s0>Aluminium</s0><s2>NC</s2><s2>FR</s2><s2>FX</s2><s5>25</s5></fC03><fC03 i1="12" i2="X" l="SPA"><s0>Aluminio</s0><s2>NC</s2><s2>FR</s2><s2>FX</s2><s5>25</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Matériau dopé</s0><s5>46</s5></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Doped materials</s0><s5>46</s5></fC03><fC03 i1="14" i2="X" l="FRE"><s0>6865</s0><s4>INC</s4><s5>56</s5></fC03><fC03 i1="15" i2="X" l="FRE"><s0>6580</s0><s4>INC</s4><s5>57</s5></fC03><fC03 i1="16" i2="X" l="FRE"><s0>ITO</s0><s4>INC</s4><s5>82</s5></fC03><fN21><s1>262</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA><pR><fA30 i1="01" i2="1" l="ENG"><s1>International Conference on Micro- and Nano-Engineering (MNE)</s1><s2>36</s2><s3>Genoa ITA</s3><s4>2010-09-19</s4></fA30></pR></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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