Conductive Conformal Thin Film Coatings for Textured PV, ALD versus Sputtering
Identifieur interne : 003287 ( Main/Repository ); précédent : 003286; suivant : 003288Conductive Conformal Thin Film Coatings for Textured PV, ALD versus Sputtering
Auteurs : RBID : Pascal:12-0082301Descripteurs français
- Pascal (Inist)
- Revêtement mince, Méthode couche atomique, Matériau conducteur, Conditions opératoires, In situ, Faisceau ionique, Gravure faisceau ionique, Structure surface, Propriété matériau, Fonctionnalisation, Aire superficielle, Ecoulement gaz, Ombrage, Couche ITO, Addition étain, Couche mince, Matériau pulvérisé, Matériau amorphe, Matériau cristallin, Oxyde d'indium, Oxyde de zinc, Oxyde d'aluminium, Composé du fluor, Oxyde d'étain, ITO.
- Wicri :
- concept : Matériau amorphe.
English descriptors
- KwdEn :
- Aluminium oxide, Amorphous material, Atomic layer method, Conducting material, Crystalline material, Fluorine compound, Functionalization, Gas flow, ITO layers, In situ, Indium oxide, Ion beam, Ion beam etching, Process conditions, Properties of materials, Shadowing, Sputtered materials, Surface area, Surface structure, Thin coatings, Thin film, Tin addition, Tin oxide, Zinc oxide.
Abstract
Next-generation photovoltaic structures require well-established deposition routes to conformal and conducting materials with defined chemical, physical and electronic composition. This work reports on the preliminary findings associated with conformal metal oxides on structured substrates including: 1) Discovery of sputtering process conditions that can be made semi-conformal when combined with in-situ techniques such as ion-beam milling for honing surface structures; 2) Development of relevant ALD chemistries that are materials-properties competitive with sputtered materials; 3) Evaluation of chemically-functionalized surface structures that maximize surface area but are structurally tailored for efficient gas flow and to minimize line-of-sight shadowing. The initial experiments have centered on combinations of amorphous and crystalline indium oxide, zinc oxide, aluminum zinc oxide, indium tin oxide, fluorinated tin oxide and indium zinc oxide. This presentation will describe these initial experiments and elucidate key physiochemical nature of the deposited thin films.
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Pascal:12-0082301Le document en format XML
<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Conductive Conformal Thin Film Coatings for Textured PV, ALD versus Sputtering</title><author><name sortKey="Dameron, Arrelaine" uniqKey="Dameron A">Arrelaine Dameron</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>National Renewable Energy Laboratory, 1617 Cole Blvd</s1><s2>Golden, CO 80401</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Golden, CO 80401</wicri:noRegion></affiliation></author><author><name sortKey="Christensen, Steven" uniqKey="Christensen S">Steven Christensen</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>National Renewable Energy Laboratory, 1617 Cole Blvd</s1><s2>Golden, CO 80401</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Golden, CO 80401</wicri:noRegion></affiliation></author><author><name sortKey="Galante, Marie" uniqKey="Galante M">Marie Galante</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>National Renewable Energy Laboratory, 1617 Cole Blvd</s1><s2>Golden, CO 80401</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Golden, CO 80401</wicri:noRegion></affiliation></author><author><name sortKey="Berry, Joseph" uniqKey="Berry J">Joseph Berry</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>National Renewable Energy Laboratory, 1617 Cole Blvd</s1><s2>Golden, CO 80401</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Golden, CO 80401</wicri:noRegion></affiliation></author><author><name sortKey="Gillaspie, Dane" uniqKey="Gillaspie D">Dane Gillaspie</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>National Renewable Energy Laboratory, 1617 Cole Blvd</s1><s2>Golden, CO 80401</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Golden, CO 80401</wicri:noRegion></affiliation></author><author><name sortKey="Perkins, John" uniqKey="Perkins J">John Perkins</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>National Renewable Energy Laboratory, 1617 Cole Blvd</s1><s2>Golden, CO 80401</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Golden, CO 80401</wicri:noRegion></affiliation></author><author><name sortKey="Ginley, David" uniqKey="Ginley D">David Ginley</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>National Renewable Energy Laboratory, 1617 Cole Blvd</s1><s2>Golden, CO 80401</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Golden, CO 80401</wicri:noRegion></affiliation></author><author><name sortKey="Gennett, Thomas" uniqKey="Gennett T">Thomas Gennett</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>National Renewable Energy Laboratory, 1617 Cole Blvd</s1><s2>Golden, CO 80401</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Golden, CO 80401</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">12-0082301</idno><date when="2011">2011</date><idno type="stanalyst">PASCAL 12-0082301 INIST</idno><idno type="RBID">Pascal:12-0082301</idno><idno type="wicri:Area/Main/Corpus">002241</idno><idno type="wicri:Area/Main/Repository">003287</idno></publicationStmt><seriesStmt><idno type="ISSN">0277-786X</idno><title level="j" type="abbreviated">Proc. SPIE Int. Soc. Opt. Eng.</title><title level="j" type="main">Proceedings of SPIE, the International Society for Optical Engineering</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium oxide</term><term>Amorphous material</term><term>Atomic layer method</term><term>Conducting material</term><term>Crystalline material</term><term>Fluorine compound</term><term>Functionalization</term><term>Gas flow</term><term>ITO layers</term><term>In situ</term><term>Indium oxide</term><term>Ion beam</term><term>Ion beam etching</term><term>Process conditions</term><term>Properties of materials</term><term>Shadowing</term><term>Sputtered materials</term><term>Surface area</term><term>Surface structure</term><term>Thin coatings</term><term>Thin film</term><term>Tin addition</term><term>Tin oxide</term><term>Zinc oxide</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Revêtement mince</term><term>Méthode couche atomique</term><term>Matériau conducteur</term><term>Conditions opératoires</term><term>In situ</term><term>Faisceau ionique</term><term>Gravure faisceau ionique</term><term>Structure surface</term><term>Propriété matériau</term><term>Fonctionnalisation</term><term>Aire superficielle</term><term>Ecoulement gaz</term><term>Ombrage</term><term>Couche ITO</term><term>Addition étain</term><term>Couche mince</term><term>Matériau pulvérisé</term><term>Matériau amorphe</term><term>Matériau cristallin</term><term>Oxyde d'indium</term><term>Oxyde de zinc</term><term>Oxyde d'aluminium</term><term>Composé du fluor</term><term>Oxyde d'étain</term><term>ITO</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Matériau amorphe</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Next-generation photovoltaic structures require well-established deposition routes to conformal and conducting materials with defined chemical, physical and electronic composition. This work reports on the preliminary findings associated with conformal metal oxides on structured substrates including: 1) Discovery of sputtering process conditions that can be made semi-conformal when combined with in-situ techniques such as ion-beam milling for honing surface structures; 2) Development of relevant ALD chemistries that are materials-properties competitive with sputtered materials; 3) Evaluation of chemically-functionalized surface structures that maximize surface area but are structurally tailored for efficient gas flow and to minimize line-of-sight shadowing. The initial experiments have centered on combinations of amorphous and crystalline indium oxide, zinc oxide, aluminum zinc oxide, indium tin oxide, fluorinated tin oxide and indium zinc oxide. This presentation will describe these initial experiments and elucidate key physiochemical nature of the deposited thin films.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0277-786X</s0></fA01><fA02 i1="01"><s0>PSISDG</s0></fA02><fA03 i2="1"><s0>Proc. SPIE Int. Soc. Opt. Eng.</s0></fA03><fA05><s2>8110</s2></fA05><fA08 i1="01" i2="1" l="ENG"><s1>Conductive Conformal Thin Film Coatings for Textured PV, ALD versus Sputtering</s1></fA08><fA09 i1="01" i2="1" l="ENG"><s1>Thin film solar technology III : 21-22 August 2011, San Diego, California, United States</s1></fA09><fA11 i1="01" i2="1"><s1>DAMERON (Arrelaine)</s1></fA11><fA11 i1="02" i2="1"><s1>CHRISTENSEN (Steven)</s1></fA11><fA11 i1="03" i2="1"><s1>GALANTE (Marie)</s1></fA11><fA11 i1="04" i2="1"><s1>BERRY (Joseph)</s1></fA11><fA11 i1="05" i2="1"><s1>GILLASPIE (Dane)</s1></fA11><fA11 i1="06" i2="1"><s1>PERKINS (John)</s1></fA11><fA11 i1="07" i2="1"><s1>GINLEY (David)</s1></fA11><fA11 i1="08" i2="1"><s1>GENNETT (Thomas)</s1></fA11><fA12 i1="01" i2="1"><s1>ELDADA (Louay A.)</s1><s9>ed.</s9></fA12><fA14 i1="01"><s1>National Renewable Energy Laboratory, 1617 Cole Blvd</s1><s2>Golden, CO 80401</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></fA14><fA18 i1="01" i2="1"><s1>SPIE</s1><s3>USA</s3><s9>org-cong.</s9></fA18><fA20><s2>81100M.1-81100M.6</s2></fA20><fA21><s1>2011</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA25 i1="01"><s1>SPIE</s1><s2>Bellingham WA</s2></fA25><fA26 i1="01"><s0>978-0-8194-8720-9</s0></fA26><fA43 i1="01"><s1>INIST</s1><s2>21760</s2><s5>354000174761780110</s5></fA43><fA44><s0>0000</s0><s1>© 2012 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>6 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>12-0082301</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Proceedings of SPIE, the International Society for Optical Engineering</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>Next-generation photovoltaic structures require well-established deposition routes to conformal and conducting materials with defined chemical, physical and electronic composition. This work reports on the preliminary findings associated with conformal metal oxides on structured substrates including: 1) Discovery of sputtering process conditions that can be made semi-conformal when combined with in-situ techniques such as ion-beam milling for honing surface structures; 2) Development of relevant ALD chemistries that are materials-properties competitive with sputtered materials; 3) Evaluation of chemically-functionalized surface structures that maximize surface area but are structurally tailored for efficient gas flow and to minimize line-of-sight shadowing. The initial experiments have centered on combinations of amorphous and crystalline indium oxide, zinc oxide, aluminum zinc oxide, indium tin oxide, fluorinated tin oxide and indium zinc oxide. This presentation will describe these initial experiments and elucidate key physiochemical nature of the deposited thin films.</s0></fC01><fC02 i1="01" i2="X"><s0>001D03C</s0></fC02><fC02 i1="02" i2="X"><s0>001D05C</s0></fC02><fC03 i1="01" i2="X" l="FRE"><s0>Revêtement mince</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="ENG"><s0>Thin coatings</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="SPA"><s0>Revestimiento delgado</s0><s5>01</s5></fC03><fC03 i1="02" i2="X" l="FRE"><s0>Méthode couche atomique</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="ENG"><s0>Atomic layer method</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="SPA"><s0>Método capa atómica</s0><s5>02</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Matériau conducteur</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>Conducting material</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="SPA"><s0>Material conductor</s0><s5>03</s5></fC03><fC03 i1="04" i2="X" l="FRE"><s0>Conditions opératoires</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="ENG"><s0>Process conditions</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="SPA"><s0>Condiciones operatorias</s0><s5>04</s5></fC03><fC03 i1="05" i2="X" l="FRE"><s0>In situ</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="ENG"><s0>In situ</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="SPA"><s0>In situ</s0><s5>05</s5></fC03><fC03 i1="06" i2="X" l="FRE"><s0>Faisceau ionique</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="ENG"><s0>Ion beam</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="SPA"><s0>Haz iónico</s0><s5>06</s5></fC03><fC03 i1="07" i2="X" l="FRE"><s0>Gravure faisceau ionique</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="ENG"><s0>Ion beam etching</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="SPA"><s0>Grabado haz iónico</s0><s5>07</s5></fC03><fC03 i1="08" i2="X" l="FRE"><s0>Structure surface</s0><s5>09</s5></fC03><fC03 i1="08" i2="X" l="ENG"><s0>Surface structure</s0><s5>09</s5></fC03><fC03 i1="08" i2="X" l="SPA"><s0>Estructura superficie</s0><s5>09</s5></fC03><fC03 i1="09" i2="X" l="FRE"><s0>Propriété matériau</s0><s5>10</s5></fC03><fC03 i1="09" i2="X" l="ENG"><s0>Properties of materials</s0><s5>10</s5></fC03><fC03 i1="09" i2="X" l="SPA"><s0>Propiedad material</s0><s5>10</s5></fC03><fC03 i1="10" i2="X" l="FRE"><s0>Fonctionnalisation</s0><s5>11</s5></fC03><fC03 i1="10" i2="X" l="ENG"><s0>Functionalization</s0><s5>11</s5></fC03><fC03 i1="10" i2="X" l="SPA"><s0>Funciónalización</s0><s5>11</s5></fC03><fC03 i1="11" i2="X" l="FRE"><s0>Aire superficielle</s0><s5>12</s5></fC03><fC03 i1="11" i2="X" l="ENG"><s0>Surface area</s0><s5>12</s5></fC03><fC03 i1="11" i2="X" l="SPA"><s0>Area superficial</s0><s5>12</s5></fC03><fC03 i1="12" i2="X" l="FRE"><s0>Ecoulement gaz</s0><s5>13</s5></fC03><fC03 i1="12" i2="X" l="ENG"><s0>Gas flow</s0><s5>13</s5></fC03><fC03 i1="12" i2="X" l="SPA"><s0>Flujo gas</s0><s5>13</s5></fC03><fC03 i1="13" i2="X" l="FRE"><s0>Ombrage</s0><s5>14</s5></fC03><fC03 i1="13" i2="X" l="ENG"><s0>Shadowing</s0><s5>14</s5></fC03><fC03 i1="13" i2="X" l="SPA"><s0>Umbría</s0><s5>14</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Couche ITO</s0><s5>15</s5></fC03><fC03 i1="14" i2="3" l="ENG"><s0>ITO layers</s0><s5>15</s5></fC03><fC03 i1="15" i2="X" l="FRE"><s0>Addition étain</s0><s5>16</s5></fC03><fC03 i1="15" i2="X" l="ENG"><s0>Tin addition</s0><s5>16</s5></fC03><fC03 i1="15" i2="X" l="SPA"><s0>Adición estaño</s0><s5>16</s5></fC03><fC03 i1="16" i2="X" l="FRE"><s0>Couche mince</s0><s5>22</s5></fC03><fC03 i1="16" i2="X" l="ENG"><s0>Thin film</s0><s5>22</s5></fC03><fC03 i1="16" i2="X" l="SPA"><s0>Capa fina</s0><s5>22</s5></fC03><fC03 i1="17" i2="3" l="FRE"><s0>Matériau pulvérisé</s0><s5>23</s5></fC03><fC03 i1="17" i2="3" l="ENG"><s0>Sputtered materials</s0><s5>23</s5></fC03><fC03 i1="18" i2="X" l="FRE"><s0>Matériau amorphe</s0><s5>24</s5></fC03><fC03 i1="18" i2="X" l="ENG"><s0>Amorphous material</s0><s5>24</s5></fC03><fC03 i1="18" i2="X" l="SPA"><s0>Material amorfo</s0><s5>24</s5></fC03><fC03 i1="19" i2="X" l="FRE"><s0>Matériau cristallin</s0><s5>25</s5></fC03><fC03 i1="19" i2="X" l="ENG"><s0>Crystalline material</s0><s5>25</s5></fC03><fC03 i1="19" i2="X" l="SPA"><s0>Material cristalino</s0><s5>25</s5></fC03><fC03 i1="20" i2="X" l="FRE"><s0>Oxyde d'indium</s0><s5>26</s5></fC03><fC03 i1="20" i2="X" l="ENG"><s0>Indium oxide</s0><s5>26</s5></fC03><fC03 i1="20" i2="X" l="SPA"><s0>Indio óxido</s0><s5>26</s5></fC03><fC03 i1="21" i2="X" l="FRE"><s0>Oxyde de zinc</s0><s5>27</s5></fC03><fC03 i1="21" i2="X" l="ENG"><s0>Zinc oxide</s0><s5>27</s5></fC03><fC03 i1="21" i2="X" l="SPA"><s0>Zinc óxido</s0><s5>27</s5></fC03><fC03 i1="22" i2="X" l="FRE"><s0>Oxyde d'aluminium</s0><s5>28</s5></fC03><fC03 i1="22" i2="X" l="ENG"><s0>Aluminium oxide</s0><s5>28</s5></fC03><fC03 i1="22" i2="X" l="SPA"><s0>Aluminio óxido</s0><s5>28</s5></fC03><fC03 i1="23" i2="X" l="FRE"><s0>Composé du fluor</s0><s5>29</s5></fC03><fC03 i1="23" i2="X" l="ENG"><s0>Fluorine compound</s0><s5>29</s5></fC03><fC03 i1="23" i2="X" l="SPA"><s0>Flúor compuesto</s0><s5>29</s5></fC03><fC03 i1="24" i2="X" l="FRE"><s0>Oxyde d'étain</s0><s5>30</s5></fC03><fC03 i1="24" i2="X" l="ENG"><s0>Tin oxide</s0><s5>30</s5></fC03><fC03 i1="24" i2="X" l="SPA"><s0>Estaño óxido</s0><s5>30</s5></fC03><fC03 i1="25" i2="X" l="FRE"><s0>ITO</s0><s4>INC</s4><s5>82</s5></fC03><fN21><s1>065</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA><pR><fA30 i1="01" i2="1" l="ENG"><s1>Thin film solar technology. 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