Serveur d'exploration sur l'Indium

Attention, ce site est en cours de développement !
Attention, site généré par des moyens informatiques à partir de corpus bruts.
Les informations ne sont donc pas validées.

Electromechanical stability of buckled thin metal films on elastomer

Identifieur interne : 003007 ( Main/Repository ); précédent : 003006; suivant : 003008

Electromechanical stability of buckled thin metal films on elastomer

Auteurs : RBID : Pascal:11-0327180

Descripteurs français

English descriptors

Abstract

Oxidizable metals such as Al are found to become highly resistive when exposed to air in buckled state, >10x resistance increase compared to that in flat configuration. On the other hand, noble metal and oxide conductor films, such as Au and indium tin oxide show negligible resistance increase. The enhanced oxidation of grain boundaries that are exposed to air when buckled is found to be responsible for the observed electromechanical stability. Simple yet effective method, i.e., thin capping layer of noble metal, to prevent the oxidation of non-noble metal is proposed and experimentally verified.

Links toward previous steps (curation, corpus...)


Links to Exploration step

Pascal:11-0327180

Le document en format XML

<record>
<TEI>
<teiHeader>
<fileDesc>
<titleStmt>
<title xml:lang="en" level="a">Electromechanical stability of buckled thin metal films on elastomer</title>
<author>
<name sortKey="Kim, Donyoung" uniqKey="Kim D">Donyoung Kim</name>
<affiliation wicri:level="1">
<inist:fA14 i1="01">
<s1>Department of Materials Science and Engineering, Yonsei University</s1>
<s2>Seoul 120-749</s2>
<s3>KOR</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>Corée du Sud</country>
<placeName>
<settlement type="city">Séoul</settlement>
</placeName>
</affiliation>
</author>
<author>
<name sortKey="Hwang, Hyun Sik" uniqKey="Hwang H">Hyun-Sik Hwang</name>
<affiliation wicri:level="1">
<inist:fA14 i1="01">
<s1>Department of Materials Science and Engineering, Yonsei University</s1>
<s2>Seoul 120-749</s2>
<s3>KOR</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>Corée du Sud</country>
<placeName>
<settlement type="city">Séoul</settlement>
</placeName>
</affiliation>
</author>
<author>
<name sortKey="Khang, Dahl Young" uniqKey="Khang D">Dahl-Young Khang</name>
<affiliation wicri:level="1">
<inist:fA14 i1="01">
<s1>Department of Materials Science and Engineering, Yonsei University</s1>
<s2>Seoul 120-749</s2>
<s3>KOR</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>Corée du Sud</country>
<placeName>
<settlement type="city">Séoul</settlement>
</placeName>
</affiliation>
</author>
</titleStmt>
<publicationStmt>
<idno type="inist">11-0327180</idno>
<date when="2011">2011</date>
<idno type="stanalyst">PASCAL 11-0327180 INIST</idno>
<idno type="RBID">Pascal:11-0327180</idno>
<idno type="wicri:Area/Main/Corpus">002E12</idno>
<idno type="wicri:Area/Main/Repository">003007</idno>
</publicationStmt>
<seriesStmt>
<idno type="ISSN">0040-6090</idno>
<title level="j" type="abbreviated">Thin solid films</title>
<title level="j" type="main">Thin solid films</title>
</seriesStmt>
</fileDesc>
<profileDesc>
<textClass>
<keywords scheme="KwdEn" xml:lang="en">
<term>Crystal defects</term>
<term>Elastomers</term>
<term>Electric resistivity</term>
<term>Gold</term>
<term>Grain boundaries</term>
<term>Indium oxide</term>
<term>Metallic thin films</term>
<term>Nonmetals</term>
<term>Oxidation</term>
<term>Thin films</term>
<term>Tin oxide</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr">
<term>Couche mince</term>
<term>Couche mince métallique</term>
<term>Elastomère</term>
<term>Oxydation</term>
<term>Joint grain</term>
<term>Défaut cristallin</term>
<term>Non métal</term>
<term>Résistivité électrique</term>
<term>Or</term>
<term>Oxyde d'indium</term>
<term>Oxyde d'étain</term>
<term>Substrat métal</term>
<term>6855J</term>
</keywords>
<keywords scheme="Wicri" type="concept" xml:lang="fr">
<term>Or</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front>
<div type="abstract" xml:lang="en">Oxidizable metals such as Al are found to become highly resistive when exposed to air in buckled state, >10x resistance increase compared to that in flat configuration. On the other hand, noble metal and oxide conductor films, such as Au and indium tin oxide show negligible resistance increase. The enhanced oxidation of grain boundaries that are exposed to air when buckled is found to be responsible for the observed electromechanical stability. Simple yet effective method, i.e., thin capping layer of noble metal, to prevent the oxidation of non-noble metal is proposed and experimentally verified.</div>
</front>
</TEI>
<inist>
<standard h6="B">
<pA>
<fA01 i1="01" i2="1">
<s0>0040-6090</s0>
</fA01>
<fA02 i1="01">
<s0>THSFAP</s0>
</fA02>
<fA03 i2="1">
<s0>Thin solid films</s0>
</fA03>
<fA05>
<s2>519</s2>
</fA05>
<fA06>
<s2>16</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG">
<s1>Electromechanical stability of buckled thin metal films on elastomer</s1>
</fA08>
<fA11 i1="01" i2="1">
<s1>KIM (Donyoung)</s1>
</fA11>
<fA11 i1="02" i2="1">
<s1>HWANG (Hyun-Sik)</s1>
</fA11>
<fA11 i1="03" i2="1">
<s1>KHANG (Dahl-Young)</s1>
</fA11>
<fA14 i1="01">
<s1>Department of Materials Science and Engineering, Yonsei University</s1>
<s2>Seoul 120-749</s2>
<s3>KOR</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
</fA14>
<fA20>
<s1>5511-5515</s1>
</fA20>
<fA21>
<s1>2011</s1>
</fA21>
<fA23 i1="01">
<s0>ENG</s0>
</fA23>
<fA43 i1="01">
<s1>INIST</s1>
<s2>13597</s2>
<s5>354000192211190350</s5>
</fA43>
<fA44>
<s0>0000</s0>
<s1>© 2011 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45>
<s0>28 ref.</s0>
</fA45>
<fA47 i1="01" i2="1">
<s0>11-0327180</s0>
</fA47>
<fA60>
<s1>P</s1>
</fA60>
<fA61>
<s0>A</s0>
</fA61>
<fA64 i1="01" i2="1">
<s0>Thin solid films</s0>
</fA64>
<fA66 i1="01">
<s0>NLD</s0>
</fA66>
<fC01 i1="01" l="ENG">
<s0>Oxidizable metals such as Al are found to become highly resistive when exposed to air in buckled state, >10x resistance increase compared to that in flat configuration. On the other hand, noble metal and oxide conductor films, such as Au and indium tin oxide show negligible resistance increase. The enhanced oxidation of grain boundaries that are exposed to air when buckled is found to be responsible for the observed electromechanical stability. Simple yet effective method, i.e., thin capping layer of noble metal, to prevent the oxidation of non-noble metal is proposed and experimentally verified.</s0>
</fC01>
<fC02 i1="01" i2="3">
<s0>001B60H55J</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE">
<s0>Couche mince</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="3" l="ENG">
<s0>Thin films</s0>
<s5>01</s5>
</fC03>
<fC03 i1="02" i2="3" l="FRE">
<s0>Couche mince métallique</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="3" l="ENG">
<s0>Metallic thin films</s0>
<s5>02</s5>
</fC03>
<fC03 i1="03" i2="3" l="FRE">
<s0>Elastomère</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="3" l="ENG">
<s0>Elastomers</s0>
<s5>03</s5>
</fC03>
<fC03 i1="04" i2="3" l="FRE">
<s0>Oxydation</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="3" l="ENG">
<s0>Oxidation</s0>
<s5>04</s5>
</fC03>
<fC03 i1="05" i2="3" l="FRE">
<s0>Joint grain</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="3" l="ENG">
<s0>Grain boundaries</s0>
<s5>05</s5>
</fC03>
<fC03 i1="06" i2="3" l="FRE">
<s0>Défaut cristallin</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="3" l="ENG">
<s0>Crystal defects</s0>
<s5>06</s5>
</fC03>
<fC03 i1="07" i2="3" l="FRE">
<s0>Non métal</s0>
<s2>NC</s2>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="3" l="ENG">
<s0>Nonmetals</s0>
<s2>NC</s2>
<s5>07</s5>
</fC03>
<fC03 i1="08" i2="3" l="FRE">
<s0>Résistivité électrique</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="3" l="ENG">
<s0>Electric resistivity</s0>
<s5>08</s5>
</fC03>
<fC03 i1="09" i2="3" l="FRE">
<s0>Or</s0>
<s2>NC</s2>
<s5>15</s5>
</fC03>
<fC03 i1="09" i2="3" l="ENG">
<s0>Gold</s0>
<s2>NC</s2>
<s5>15</s5>
</fC03>
<fC03 i1="10" i2="X" l="FRE">
<s0>Oxyde d'indium</s0>
<s5>16</s5>
</fC03>
<fC03 i1="10" i2="X" l="ENG">
<s0>Indium oxide</s0>
<s5>16</s5>
</fC03>
<fC03 i1="10" i2="X" l="SPA">
<s0>Indio óxido</s0>
<s5>16</s5>
</fC03>
<fC03 i1="11" i2="X" l="FRE">
<s0>Oxyde d'étain</s0>
<s5>17</s5>
</fC03>
<fC03 i1="11" i2="X" l="ENG">
<s0>Tin oxide</s0>
<s5>17</s5>
</fC03>
<fC03 i1="11" i2="X" l="SPA">
<s0>Estaño óxido</s0>
<s5>17</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE">
<s0>Substrat métal</s0>
<s4>INC</s4>
<s5>46</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE">
<s0>6855J</s0>
<s4>INC</s4>
<s5>71</s5>
</fC03>
<fN21>
<s1>220</s1>
</fN21>
<fN44 i1="01">
<s1>OTO</s1>
</fN44>
<fN82>
<s1>OTO</s1>
</fN82>
</pA>
</standard>
</inist>
</record>

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/Main/Repository
HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 003007 | SxmlIndent | more

Ou

HfdSelect -h $EXPLOR_AREA/Data/Main/Repository/biblio.hfd -nk 003007 | SxmlIndent | more

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    Main
   |étape=   Repository
   |type=    RBID
   |clé=     Pascal:11-0327180
   |texte=   Electromechanical stability of buckled thin metal films on elastomer
}}

Wicri

This area was generated with Dilib version V0.5.77.
Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024