Impedance spectroscopy study and ground state electronic properties of In(Mg1/2Ti1/2)O3
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Abstract
The complex perovskite oxide In(Mg1/2Ti1/2)O3 (IMT) is synthesized by a solid state reaction technique. The X-ray diffraction of the sample at 30 °C shows a monoclinic phase. The dielectric properties of the sample are investigated in the temperature range from 143 to 373 K and in the frequency range from 580 Hz to 1 MHz using impedance spectroscopy. An analysis of the dielectric constant ε' and loss tangent (tan δ) with frequency is performed assuming a distribution of relaxation times. The Cole-Cole model is used to explain the relaxation mechanism in IMT. The scaling behavior of imaginary part of electric modulus (M") shows that the relaxation describes the same mechanism at various temperatures. The electronic structure and hence the ground state properties of IMT is studied by X-ray photoemission spectroscopy (XPS). The valence band XPS spectrum is compared with the electronic structure calculation. The electronic structure calculation indicates that the In-5s orbital introduces a significant density of states at the Fermi level, which is responsible for a high value of conductivity in IMT.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Impedance spectroscopy study and ground state electronic properties of In(Mg<sub>1/2</sub>Ti<sub>1/2</sub>)O<sub>3</sub></title><author><name sortKey="Agrawal, Lata" uniqKey="Agrawal L">Lata Agrawal</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>University Department of Physics, T.M. Bhagalpur University</s1><s2>Bhagalpur 812007</s2><s3>IND</s3><sZ>1 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Inde</country><wicri:noRegion>Bhagalpur 812007</wicri:noRegion></affiliation></author><author><name sortKey="Dutta, Alo" uniqKey="Dutta A">Alo Dutta</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Physics, Bose Institute, 93/1 Acharya Prafulla Chandra Road</s1><s2>Kolkata 700009</s2><s3>IND</s3><sZ>2 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Inde</country><wicri:noRegion>Kolkata 700009</wicri:noRegion></affiliation></author><author><name sortKey="Shannigrahi, Shantiranjan" uniqKey="Shannigrahi S">Shantiranjan Shannigrahi</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Institute of Materials Research and Engineering (IMRE), 3 Research Link</s1><s2>Singapore 117602</s2><s3>SGP</s3><sZ>3 aut.</sZ></inist:fA14><country>Singapour</country><wicri:noRegion>Singapore 117602</wicri:noRegion></affiliation></author><author><name sortKey="Singh, B P" uniqKey="Singh B">B. P. Singh</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>University Department of Physics, T.M. Bhagalpur University</s1><s2>Bhagalpur 812007</s2><s3>IND</s3><sZ>1 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Inde</country><wicri:noRegion>Bhagalpur 812007</wicri:noRegion></affiliation></author><author><name sortKey="Sinha, T P" uniqKey="Sinha T">T. P. Sinha</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Physics, Bose Institute, 93/1 Acharya Prafulla Chandra Road</s1><s2>Kolkata 700009</s2><s3>IND</s3><sZ>2 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Inde</country><wicri:noRegion>Kolkata 700009</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">11-0133748</idno><date when="2011">2011</date><idno type="stanalyst">PASCAL 11-0133748 INIST</idno><idno type="RBID">Pascal:11-0133748</idno><idno type="wicri:Area/Main/Corpus">003526</idno><idno type="wicri:Area/Main/Repository">002C89</idno></publicationStmt><seriesStmt><idno type="ISSN">0921-4526</idno><title level="j" type="abbreviated">Physica, B Condens. matter</title><title level="j" type="main">Physica. B, Condensed matter</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Electric impedance</term><term>Electrical conductivity</term><term>Electronic density of states</term><term>Electronic structure</term><term>Frequency dependence</term><term>Indium Magnesium Titanates Mixed</term><term>Permittivity</term><term>Perovskites</term><term>Relaxation time</term><term>Scaling laws</term><term>Solid state reaction</term><term>X-ray photoelectron spectra</term><term>XRD</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Impédance électrique</term><term>Structure électronique</term><term>Réaction état solide</term><term>Diffraction RX</term><term>Conductivité électrique</term><term>Constante diélectrique</term><term>Temps relaxation</term><term>Dépendance fréquence</term><term>Loi échelle</term><term>Spectre photoélectron RX</term><term>Densité état électron</term><term>Indium Magnésium Titanate Mixte</term><term>Perovskites</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The complex perovskite oxide In(Mg<sub>1/2</sub>Ti<sub>1/2</sub>)O<sub>3</sub> (IMT) is synthesized by a solid state reaction technique. The X-ray diffraction of the sample at 30 °C shows a monoclinic phase. The dielectric properties of the sample are investigated in the temperature range from 143 to 373 K and in the frequency range from 580 Hz to 1 MHz using impedance spectroscopy. An analysis of the dielectric constant ε' and loss tangent (tan δ) with frequency is performed assuming a distribution of relaxation times. The Cole-Cole model is used to explain the relaxation mechanism in IMT. The scaling behavior of imaginary part of electric modulus (M") shows that the relaxation describes the same mechanism at various temperatures. The electronic structure and hence the ground state properties of IMT is studied by X-ray photoemission spectroscopy (XPS). The valence band XPS spectrum is compared with the electronic structure calculation. The electronic structure calculation indicates that the In-5s orbital introduces a significant density of states at the Fermi level, which is responsible for a high value of conductivity in IMT.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0921-4526</s0></fA01><fA03 i2="1"><s0>Physica, B Condens. matter</s0></fA03><fA05><s2>406</s2></fA05><fA06><s2>5</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Impedance spectroscopy study and ground state electronic properties of In(Mg<sub>1/2</sub>Ti<sub>1/2</sub>)O<sub>3</sub></s1></fA08><fA11 i1="01" i2="1"><s1>AGRAWAL (Lata)</s1></fA11><fA11 i1="02" i2="1"><s1>DUTTA (Alo)</s1></fA11><fA11 i1="03" i2="1"><s1>SHANNIGRAHI (Shantiranjan)</s1></fA11><fA11 i1="04" i2="1"><s1>SINGH (B. P.)</s1></fA11><fA11 i1="05" i2="1"><s1>SINHA (T. P.)</s1></fA11><fA14 i1="01"><s1>University Department of Physics, T.M. Bhagalpur University</s1><s2>Bhagalpur 812007</s2><s3>IND</s3><sZ>1 aut.</sZ><sZ>4 aut.</sZ></fA14><fA14 i1="02"><s1>Department of Physics, Bose Institute, 93/1 Acharya Prafulla Chandra Road</s1><s2>Kolkata 700009</s2><s3>IND</s3><sZ>2 aut.</sZ><sZ>5 aut.</sZ></fA14><fA14 i1="03"><s1>Institute of Materials Research and Engineering (IMRE), 3 Research Link</s1><s2>Singapore 117602</s2><s3>SGP</s3><sZ>3 aut.</sZ></fA14><fA20><s1>1081-1087</s1></fA20><fA21><s1>2011</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>145B</s2><s5>354000194415430070</s5></fA43><fA44><s0>0000</s0><s1>© 2011 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>33 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>11-0133748</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Physica. B, Condensed matter</s0></fA64><fA66 i1="01"><s0>GBR</s0></fA66><fC01 i1="01" l="ENG"><s0>The complex perovskite oxide In(Mg<sub>1/2</sub>Ti<sub>1/2</sub>)O<sub>3</sub> (IMT) is synthesized by a solid state reaction technique. The X-ray diffraction of the sample at 30 °C shows a monoclinic phase. The dielectric properties of the sample are investigated in the temperature range from 143 to 373 K and in the frequency range from 580 Hz to 1 MHz using impedance spectroscopy. An analysis of the dielectric constant ε' and loss tangent (tan δ) with frequency is performed assuming a distribution of relaxation times. The Cole-Cole model is used to explain the relaxation mechanism in IMT. The scaling behavior of imaginary part of electric modulus (M") shows that the relaxation describes the same mechanism at various temperatures. The electronic structure and hence the ground state properties of IMT is studied by X-ray photoemission spectroscopy (XPS). The valence band XPS spectrum is compared with the electronic structure calculation. The electronic structure calculation indicates that the In-5s orbital introduces a significant density of states at the Fermi level, which is responsible for a high value of conductivity in IMT.</s0></fC01><fC02 i1="01" i2="3"><s0>001B70A20P</s0></fC02><fC02 i1="02" i2="3"><s0>001B70G22C</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Impédance électrique</s0><s5>02</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Electric impedance</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Structure électronique</s0><s5>03</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Electronic structure</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Réaction état solide</s0><s5>04</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>Solid state reaction</s0><s5>04</s5></fC03><fC03 i1="03" i2="X" l="SPA"><s0>Reacción estado sólido</s0><s5>04</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Diffraction RX</s0><s5>05</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>XRD</s0><s5>05</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Conductivité électrique</s0><s5>06</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Electrical conductivity</s0><s5>06</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Constante diélectrique</s0><s5>07</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Permittivity</s0><s5>07</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Temps relaxation</s0><s5>08</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Relaxation time</s0><s5>08</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Dépendance fréquence</s0><s5>09</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Frequency dependence</s0><s5>09</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Loi échelle</s0><s5>10</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Scaling laws</s0><s5>10</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Spectre photoélectron RX</s0><s5>11</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>X-ray photoelectron spectra</s0><s5>11</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Densité état électron</s0><s5>12</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Electronic density of states</s0><s5>12</s5></fC03><fC03 i1="12" i2="X" l="FRE"><s0>Indium Magnésium Titanate Mixte</s0><s2>NC</s2><s2>NA</s2><s5>14</s5></fC03><fC03 i1="12" i2="X" l="ENG"><s0>Indium Magnesium Titanates Mixed</s0><s2>NC</s2><s2>NA</s2><s5>14</s5></fC03><fC03 i1="12" i2="X" l="SPA"><s0>Mixto</s0><s2>NC</s2><s2>NA</s2><s5>14</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Perovskites</s0><s5>15</s5></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Perovskites</s0><s5>15</s5></fC03><fN21><s1>087</s1></fN21></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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