Numerical optimization of In-mole fractions and layer thicknesses in AlxGa1-xN/AlN/GaN high electron mobility transistors with InGaN back barriers
Identifieur interne : 002897 ( Main/Repository ); précédent : 002896; suivant : 002898Numerical optimization of In-mole fractions and layer thicknesses in AlxGa1-xN/AlN/GaN high electron mobility transistors with InGaN back barriers
Auteurs : RBID : Pascal:11-0169076Descripteurs français
- Pascal (Inist)
- Composition chimique, Epaisseur, Couche barrière, Densité porteur charge, Autocohérence, Effet non linéaire, Equation Schrödinger, Equation Poisson, Transistor mobilité électron élevée, Relaxation contrainte, Mobilité porteur charge, Gallium Indium Nitrure Mixte, Nitrure d'aluminium, Nitrure de gallium, Hétérostructure, Gaz électron 2 dimensions.
English descriptors
- KwdEn :
- Aluminium nitride, Barrier layer, Charge carrier density, Charge carrier mobility, Chemical composition, Gallium Indium Nitrides Mixed, Gallium nitride, Heterostructures, High electron mobility transistor, Non linear effect, Poisson equation, Schrödinger equation, Self consistency, Stress relaxation, Thickness, Two-dimensional electron gas.
Abstract
The effects of the In-mole fraction (x) of an InxGa1-xN back barrier layer and the thicknesses of different layers in pseudomorphic AlyGa1-yN/AlN/GaN/InxGa1-xN/GaN heterostructures on band structures and carrier densities were investigated with the help of one-dimensional self-consistent solutions of non-linear Schrödinger-Poisson equations. Strain relaxation limits were also calculated for the investigated AlyGa1-yN barrier layer and InxGa1-xN back barriers. From an experimental point of view, two different optimized structures are suggested, and the possible effects on carrier density and mobility are discussed.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Numerical optimization of In-mole fractions and layer thicknesses in Al<sub>x</sub>Ga<sub>1-x</sub>N/AlN/GaN high electron mobility transistors with InGaN back barriers</title><author><name sortKey="Kelekci, O" uniqKey="Kelekci O">O. Kelekci</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics, Faculty of Science and Arts, Gazi University, Teknikokullar</s1><s2>06500 Ankara</s2><s3>TUR</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Turquie</country><wicri:noRegion>06500 Ankara</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Nanotechnology Research Center, Bilkent University, Bilkent</s1><s2>06800 Ankara</s2><s3>TUR</s3><sZ>1 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Turquie</country><wicri:noRegion>06800 Ankara</wicri:noRegion></affiliation></author><author><name sortKey="Lisesivdi, S B" uniqKey="Lisesivdi S">S. B. Lisesivdi</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics, Faculty of Science and Arts, Gazi University, Teknikokullar</s1><s2>06500 Ankara</s2><s3>TUR</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Turquie</country><wicri:noRegion>06500 Ankara</wicri:noRegion></affiliation></author><author><name sortKey="Ozcelik, S" uniqKey="Ozcelik S">S. Ozcelik</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics, Faculty of Science and Arts, Gazi University, Teknikokullar</s1><s2>06500 Ankara</s2><s3>TUR</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Turquie</country><wicri:noRegion>06500 Ankara</wicri:noRegion></affiliation></author><author><name sortKey="Ozbay, E" uniqKey="Ozbay E">E. Ozbay</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Nanotechnology Research Center, Bilkent University, Bilkent</s1><s2>06800 Ankara</s2><s3>TUR</s3><sZ>1 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Turquie</country><wicri:noRegion>06800 Ankara</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Department of Physics, Bilkent University, Bilkent</s1><s2>06800 Ankara</s2><s3>TUR</s3><sZ>4 aut.</sZ></inist:fA14><country>Turquie</country><wicri:noRegion>06800 Ankara</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Department of Electrical and Electronics Engineering, Bilkent University, Bilkent</s1><s2>06800 Ankara</s2><s3>TUR</s3><sZ>4 aut.</sZ></inist:fA14><country>Turquie</country><wicri:noRegion>06800 Ankara</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">11-0169076</idno><date when="2011">2011</date><idno type="stanalyst">PASCAL 11-0169076 INIST</idno><idno type="RBID">Pascal:11-0169076</idno><idno type="wicri:Area/Main/Corpus">003356</idno><idno type="wicri:Area/Main/Repository">002897</idno></publicationStmt><seriesStmt><idno type="ISSN">0921-4526</idno><title level="j" type="abbreviated">Physica, B Condens. matter</title><title level="j" type="main">Physica. B, Condensed matter</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium nitride</term><term>Barrier layer</term><term>Charge carrier density</term><term>Charge carrier mobility</term><term>Chemical composition</term><term>Gallium Indium Nitrides Mixed</term><term>Gallium nitride</term><term>Heterostructures</term><term>High electron mobility transistor</term><term>Non linear effect</term><term>Poisson equation</term><term>Schrödinger equation</term><term>Self consistency</term><term>Stress relaxation</term><term>Thickness</term><term>Two-dimensional electron gas</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Composition chimique</term><term>Epaisseur</term><term>Couche barrière</term><term>Densité porteur charge</term><term>Autocohérence</term><term>Effet non linéaire</term><term>Equation Schrödinger</term><term>Equation Poisson</term><term>Transistor mobilité électron élevée</term><term>Relaxation contrainte</term><term>Mobilité porteur charge</term><term>Gallium Indium Nitrure Mixte</term><term>Nitrure d'aluminium</term><term>Nitrure de gallium</term><term>Hétérostructure</term><term>Gaz électron 2 dimensions</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The effects of the In-mole fraction (x) of an In<sub>x</sub>Ga<sub>1-x</sub>N back barrier layer and the thicknesses of different layers in pseudomorphic Al<sub>y</sub>Ga<sub>1-y</sub>N/AlN/GaN/In<sub>x</sub>Ga<sub>1-x</sub>N/GaN heterostructures on band structures and carrier densities were investigated with the help of one-dimensional self-consistent solutions of non-linear Schrödinger-Poisson equations. Strain relaxation limits were also calculated for the investigated Al<sub>y</sub>Ga<sub>1-y</sub>N barrier layer and In<sub>x</sub>Ga<sub>1-x</sub>N back barriers. From an experimental point of view, two different optimized structures are suggested, and the possible effects on carrier density and mobility are discussed.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0921-4526</s0></fA01><fA03 i2="1"><s0>Physica, B Condens. matter</s0></fA03><fA05><s2>406</s2></fA05><fA06><s2>8</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Numerical optimization of In-mole fractions and layer thicknesses in Al<sub>x</sub>Ga<sub>1-x</sub>N/AlN/GaN high electron mobility transistors with InGaN back barriers</s1></fA08><fA11 i1="01" i2="1"><s1>KELEKCI (O.)</s1></fA11><fA11 i1="02" i2="1"><s1>LISESIVDI (S. B.)</s1></fA11><fA11 i1="03" i2="1"><s1>OZCELIK (S.)</s1></fA11><fA11 i1="04" i2="1"><s1>OZBAY (E.)</s1></fA11><fA14 i1="01"><s1>Department of Physics, Faculty of Science and Arts, Gazi University, Teknikokullar</s1><s2>06500 Ankara</s2><s3>TUR</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></fA14><fA14 i1="02"><s1>Nanotechnology Research Center, Bilkent University, Bilkent</s1><s2>06800 Ankara</s2><s3>TUR</s3><sZ>1 aut.</sZ><sZ>4 aut.</sZ></fA14><fA14 i1="03"><s1>Department of Physics, Bilkent University, Bilkent</s1><s2>06800 Ankara</s2><s3>TUR</s3><sZ>4 aut.</sZ></fA14><fA14 i1="04"><s1>Department of Electrical and Electronics Engineering, Bilkent University, Bilkent</s1><s2>06800 Ankara</s2><s3>TUR</s3><sZ>4 aut.</sZ></fA14><fA20><s1>1513-1518</s1></fA20><fA21><s1>2011</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>145B</s2><s5>354000192818240300</s5></fA43><fA44><s0>0000</s0><s1>© 2011 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>22 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>11-0169076</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Physica. B, Condensed matter</s0></fA64><fA66 i1="01"><s0>GBR</s0></fA66><fC01 i1="01" l="ENG"><s0>The effects of the In-mole fraction (x) of an In<sub>x</sub>Ga<sub>1-x</sub>N back barrier layer and the thicknesses of different layers in pseudomorphic Al<sub>y</sub>Ga<sub>1-y</sub>N/AlN/GaN/In<sub>x</sub>Ga<sub>1-x</sub>N/GaN heterostructures on band structures and carrier densities were investigated with the help of one-dimensional self-consistent solutions of non-linear Schrödinger-Poisson equations. Strain relaxation limits were also calculated for the investigated Al<sub>y</sub>Ga<sub>1-y</sub>N barrier layer and In<sub>x</sub>Ga<sub>1-x</sub>N back barriers. From an experimental point of view, two different optimized structures are suggested, and the possible effects on carrier density and mobility are discussed.</s0></fC01><fC02 i1="01" i2="X"><s0>001D03F04</s0></fC02><fC03 i1="01" i2="X" l="FRE"><s0>Composition chimique</s0><s5>02</s5></fC03><fC03 i1="01" i2="X" l="ENG"><s0>Chemical composition</s0><s5>02</s5></fC03><fC03 i1="01" i2="X" l="SPA"><s0>Composición química</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="FRE"><s0>Epaisseur</s0><s5>03</s5></fC03><fC03 i1="02" i2="X" l="ENG"><s0>Thickness</s0><s5>03</s5></fC03><fC03 i1="02" i2="X" l="SPA"><s0>Espesor</s0><s5>03</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Couche barrière</s0><s5>04</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Barrier layer</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="FRE"><s0>Densité porteur charge</s0><s5>06</s5></fC03><fC03 i1="04" i2="X" l="ENG"><s0>Charge carrier density</s0><s5>06</s5></fC03><fC03 i1="04" i2="X" l="SPA"><s0>Concentración portador carga</s0><s5>06</s5></fC03><fC03 i1="05" i2="X" l="FRE"><s0>Autocohérence</s0><s5>07</s5></fC03><fC03 i1="05" i2="X" l="ENG"><s0>Self consistency</s0><s5>07</s5></fC03><fC03 i1="05" i2="X" l="SPA"><s0>Autocoherencia</s0><s5>07</s5></fC03><fC03 i1="06" i2="X" l="FRE"><s0>Effet non linéaire</s0><s5>08</s5></fC03><fC03 i1="06" i2="X" l="ENG"><s0>Non linear effect</s0><s5>08</s5></fC03><fC03 i1="06" i2="X" l="SPA"><s0>Efecto no lineal</s0><s5>08</s5></fC03><fC03 i1="07" i2="X" l="FRE"><s0>Equation Schrödinger</s0><s5>09</s5></fC03><fC03 i1="07" i2="X" l="ENG"><s0>Schrödinger equation</s0><s5>09</s5></fC03><fC03 i1="07" i2="X" l="SPA"><s0>Ecuación Schrödinger</s0><s5>09</s5></fC03><fC03 i1="08" i2="X" l="FRE"><s0>Equation Poisson</s0><s5>10</s5></fC03><fC03 i1="08" i2="X" l="ENG"><s0>Poisson equation</s0><s5>10</s5></fC03><fC03 i1="08" i2="X" l="SPA"><s0>Ecuación Poisson</s0><s5>10</s5></fC03><fC03 i1="09" i2="X" l="FRE"><s0>Transistor mobilité électron élevée</s0><s5>11</s5></fC03><fC03 i1="09" i2="X" l="ENG"><s0>High electron mobility transistor</s0><s5>11</s5></fC03><fC03 i1="09" i2="X" l="SPA"><s0>Transistor movibilidad elevada electrones</s0><s5>11</s5></fC03><fC03 i1="10" i2="X" l="FRE"><s0>Relaxation contrainte</s0><s5>12</s5></fC03><fC03 i1="10" i2="X" l="ENG"><s0>Stress relaxation</s0><s5>12</s5></fC03><fC03 i1="10" i2="X" l="SPA"><s0>Relajación tensión</s0><s5>12</s5></fC03><fC03 i1="11" i2="X" l="FRE"><s0>Mobilité porteur charge</s0><s5>13</s5></fC03><fC03 i1="11" i2="X" l="ENG"><s0>Charge carrier mobility</s0><s5>13</s5></fC03><fC03 i1="11" i2="X" l="SPA"><s0>Movilidad portador carga</s0><s5>13</s5></fC03><fC03 i1="12" i2="X" l="FRE"><s0>Gallium Indium Nitrure Mixte</s0><s2>NC</s2><s2>FX</s2><s2>NA</s2><s5>14</s5></fC03><fC03 i1="12" i2="X" l="ENG"><s0>Gallium Indium Nitrides Mixed</s0><s2>NC</s2><s2>FX</s2><s2>NA</s2><s5>14</s5></fC03><fC03 i1="12" i2="X" l="SPA"><s0>Galio Indio Nitruro Mixto</s0><s2>NC</s2><s2>FX</s2><s2>NA</s2><s5>14</s5></fC03><fC03 i1="13" i2="X" l="FRE"><s0>Nitrure d'aluminium</s0><s5>15</s5></fC03><fC03 i1="13" i2="X" l="ENG"><s0>Aluminium nitride</s0><s5>15</s5></fC03><fC03 i1="13" i2="X" l="SPA"><s0>Aluminio nitruro</s0><s5>15</s5></fC03><fC03 i1="14" i2="X" l="FRE"><s0>Nitrure de gallium</s0><s5>16</s5></fC03><fC03 i1="14" i2="X" l="ENG"><s0>Gallium nitride</s0><s5>16</s5></fC03><fC03 i1="14" i2="X" l="SPA"><s0>Galio nitruro</s0><s5>16</s5></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Hétérostructure</s0><s5>19</s5></fC03><fC03 i1="15" i2="3" l="ENG"><s0>Heterostructures</s0><s5>19</s5></fC03><fC03 i1="16" i2="3" l="FRE"><s0>Gaz électron 2 dimensions</s0><s5>20</s5></fC03><fC03 i1="16" i2="3" l="ENG"><s0>Two-dimensional electron gas</s0><s5>20</s5></fC03><fN21><s1>108</s1></fN21></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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