Output power enhancements of nitride-based light-emitting diodes with inverted pyramid sidewalls structure
Identifieur interne : 002818 ( Main/Repository ); précédent : 002817; suivant : 002819Output power enhancements of nitride-based light-emitting diodes with inverted pyramid sidewalls structure
Auteurs : RBID : Pascal:11-0106987Descripteurs français
- Pascal (Inist)
- Puissance sortie, Diode électroluminescente, Attaque chimique, Procédé voie humide, Couche épitaxique, Ecriture laser, Gravure, Forme hexagonale, Evaluation performance, Méthode MOCVD, Hydroxyde de potassium, Nitrure de gallium, Composé binaire, Oxyde d'aluminium, Composé ternaire, Nitrure d'indium, Puits quantique multiple, Microusinage, Fabrication microélectronique, 8107S, 8115G, GaN, Al2O3, InGaN.
English descriptors
- KwdEn :
- Aluminium oxide, Binary compound, Chemical etching, Engraving, Epitaxial film, Gallium nitride, Hexagonal shape, Indium nitride, Laser writing, Light emitting diode, MOCVD, Microelectronic fabrication, Micromachining, Multiple quantum well, Output power, Performance evaluation, Potassium hydroxide, Ternary compound, Wet process.
Abstract
This study presents nitride-based light-emitting diodes (LEDs) with inverted pyramid sidewalls by chemical wet etching nitride epitaxial layers and investigates the chemical wet etching mechanism of inverted pyramid sidewalls. It is well known that chemical etching solutions such as KOH, H2SO4 and H3PO4, to selectively etch the N-face GaN but not the Ga-face GaN. In this study, the N-face GaN was exposed around the chip by laser scribing at the GaN/sapphire interface. These channels provided paths for the chemical etchant to flow and allow the etching solution to further contact with and etch the exposed bottom N-face GaN. Chemical etching of the chip sidewalls formed the inverted hexagonal pyramid shape with {10 -1 -1} facets. Findings show that inverted pyramid sidewalls enhance 20 mA LED output power by 27% for LEDs, with chemical etching of the chip sidewalls for 4 min, compared to the conventional LED. The larger LED output power is attributed to increased light extraction efficiency by inverted pyramid sidewalls.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Output power enhancements of nitride-based light-emitting diodes with inverted pyramid sidewalls structure</title><author><name sortKey="Chang, Li Chuan" uniqKey="Chang L">Li-Chuan Chang</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Optics and Photonics, National Central University</s1><s2>Jhongli, Taoyuan 32001</s2><s3>TWN</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Taïwan</country><wicri:noRegion>Jhongli, Taoyuan 32001</wicri:noRegion></affiliation></author><author><name sortKey="Kuo, Cheng Huang" uniqKey="Kuo C">Cheng-Huang Kuo</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Institute of Lighting and Energy Photonics, National Chiao Tung University</s1><s2>Guiren, Tainan 71150</s2><s3>TWN</s3><sZ>2 aut.</sZ></inist:fA14><country>Taïwan</country><wicri:noRegion>Guiren, Tainan 71150</wicri:noRegion></affiliation></author><author><name sortKey="Kuo, Chi Wen" uniqKey="Kuo C">Chi-Wen Kuo</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Optics and Photonics, National Central University</s1><s2>Jhongli, Taoyuan 32001</s2><s3>TWN</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Taïwan</country><wicri:noRegion>Jhongli, Taoyuan 32001</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">11-0106987</idno><date when="2011">2011</date><idno type="stanalyst">PASCAL 11-0106987 INIST</idno><idno type="RBID">Pascal:11-0106987</idno><idno type="wicri:Area/Main/Corpus">003606</idno><idno type="wicri:Area/Main/Repository">002818</idno></publicationStmt><seriesStmt><idno type="ISSN">0038-1101</idno><title level="j" type="abbreviated">Solid-state electron.</title><title level="j" type="main">Solid-state electronics</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium oxide</term><term>Binary compound</term><term>Chemical etching</term><term>Engraving</term><term>Epitaxial film</term><term>Gallium nitride</term><term>Hexagonal shape</term><term>Indium nitride</term><term>Laser writing</term><term>Light emitting diode</term><term>MOCVD</term><term>Microelectronic fabrication</term><term>Micromachining</term><term>Multiple quantum well</term><term>Output power</term><term>Performance evaluation</term><term>Potassium hydroxide</term><term>Ternary compound</term><term>Wet process</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Puissance sortie</term><term>Diode électroluminescente</term><term>Attaque chimique</term><term>Procédé voie humide</term><term>Couche épitaxique</term><term>Ecriture laser</term><term>Gravure</term><term>Forme hexagonale</term><term>Evaluation performance</term><term>Méthode MOCVD</term><term>Hydroxyde de potassium</term><term>Nitrure de gallium</term><term>Composé binaire</term><term>Oxyde d'aluminium</term><term>Composé ternaire</term><term>Nitrure d'indium</term><term>Puits quantique multiple</term><term>Microusinage</term><term>Fabrication microélectronique</term><term>8107S</term><term>8115G</term><term>GaN</term><term>Al2O3</term><term>InGaN</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">This study presents nitride-based light-emitting diodes (LEDs) with inverted pyramid sidewalls by chemical wet etching nitride epitaxial layers and investigates the chemical wet etching mechanism of inverted pyramid sidewalls. It is well known that chemical etching solutions such as KOH, H<sub>2</sub>SO<sub>4</sub> and H<sub>3</sub>PO<sub>4</sub>, to selectively etch the N-face GaN but not the Ga-face GaN. In this study, the N-face GaN was exposed around the chip by laser scribing at the GaN/sapphire interface. These channels provided paths for the chemical etchant to flow and allow the etching solution to further contact with and etch the exposed bottom N-face GaN. Chemical etching of the chip sidewalls formed the inverted hexagonal pyramid shape with {10 -1 -1} facets. Findings show that inverted pyramid sidewalls enhance 20 mA LED output power by 27% for LEDs, with chemical etching of the chip sidewalls for 4 min, compared to the conventional LED. The larger LED output power is attributed to increased light extraction efficiency by inverted pyramid sidewalls.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0038-1101</s0></fA01><fA03 i2="1"><s0>Solid-state electron.</s0></fA03><fA05><s2>56</s2></fA05><fA06><s2>1</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Output power enhancements of nitride-based light-emitting diodes with inverted pyramid sidewalls structure</s1></fA08><fA11 i1="01" i2="1"><s1>CHANG (Li-Chuan)</s1></fA11><fA11 i1="02" i2="1"><s1>KUO (Cheng-Huang)</s1></fA11><fA11 i1="03" i2="1"><s1>KUO (Chi-Wen)</s1></fA11><fA14 i1="01"><s1>Department of Optics and Photonics, National Central University</s1><s2>Jhongli, Taoyuan 32001</s2><s3>TWN</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ></fA14><fA14 i1="02"><s1>Institute of Lighting and Energy Photonics, National Chiao Tung University</s1><s2>Guiren, Tainan 71150</s2><s3>TWN</s3><sZ>2 aut.</sZ></fA14><fA20><s1>8-12</s1></fA20><fA21><s1>2011</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>2888</s2><s5>354000193638530020</s5></fA43><fA44><s0>0000</s0><s1>© 2011 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>15 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>11-0106987</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Solid-state electronics</s0></fA64><fA66 i1="01"><s0>GBR</s0></fA66><fC01 i1="01" l="ENG"><s0>This study presents nitride-based light-emitting diodes (LEDs) with inverted pyramid sidewalls by chemical wet etching nitride epitaxial layers and investigates the chemical wet etching mechanism of inverted pyramid sidewalls. It is well known that chemical etching solutions such as KOH, H<sub>2</sub>SO<sub>4</sub> and H<sub>3</sub>PO<sub>4</sub>, to selectively etch the N-face GaN but not the Ga-face GaN. In this study, the N-face GaN was exposed around the chip by laser scribing at the GaN/sapphire interface. These channels provided paths for the chemical etchant to flow and allow the etching solution to further contact with and etch the exposed bottom N-face GaN. Chemical etching of the chip sidewalls formed the inverted hexagonal pyramid shape with {10 -1 -1} facets. Findings show that inverted pyramid sidewalls enhance 20 mA LED output power by 27% for LEDs, with chemical etching of the chip sidewalls for 4 min, compared to the conventional LED. The larger LED output power is attributed to increased light extraction efficiency by inverted pyramid sidewalls.</s0></fC01><fC02 i1="01" i2="X"><s0>001D03F15</s0></fC02><fC02 i1="02" i2="3"><s0>001B80A07S</s0></fC02><fC02 i1="03" i2="X"><s0>001D03F17</s0></fC02><fC02 i1="04" i2="3"><s0>001B80A15G</s0></fC02><fC03 i1="01" i2="X" l="FRE"><s0>Puissance sortie</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="ENG"><s0>Output power</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="SPA"><s0>Potencia salida</s0><s5>01</s5></fC03><fC03 i1="02" i2="X" l="FRE"><s0>Diode électroluminescente</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="ENG"><s0>Light emitting diode</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="SPA"><s0>Diodo electroluminescente</s0><s5>02</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Attaque chimique</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>Chemical etching</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="SPA"><s0>Ataque químico</s0><s5>03</s5></fC03><fC03 i1="04" i2="X" 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