Paraffin wax passivation layer improvements in electrical characteristics of bottom gate amorphous indium-gallium-zinc oxide thin-film transistors
Identifieur interne : 002807 ( Main/Repository ); précédent : 002806; suivant : 002808Paraffin wax passivation layer improvements in electrical characteristics of bottom gate amorphous indium-gallium-zinc oxide thin-film transistors
Auteurs : RBID : Pascal:12-0228690Descripteurs français
- Pascal (Inist)
- Caractéristique électrique, Electrode commande, Transistor couche mince, Procédé sol gel, Affichage écran plat, Effet contrainte, Effet photoinduit, Densité état, Densité état électron, Cire, Tellurure de gallium, Gallium Indium Zinc Oxyde Mixte, Semiconducteur, Paraffine, 8530T, 8115L, 7320A, 8530P.
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- concept : Paraffine.
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Abstract
In this research, paraffin wax is employed as the passivation layer of the bottom gate amorphous indium-gallium-zinc oxide thin-film transistors (a-IGZO TFTs), and it is formed by sol-gel process in the atmosphere. The high yield and low cost passivation layer of sol-gel process technology has attracted much attention for current flat-panel-display manufacturing. Comparing with passivation-free a-IGZO TFTs, passivated devices exhibit a superior stability against positive gate bias stress in different ambient gas, demonstrating that paraffin wax shows gas-resisting characteristics for a-IGZO TFTs application. Furthermore, light-induced stretch-out phenomenon for paraffin wax passivated device is suppressed. This superior stability of the passivated device was attributed to the reduced total density of states (DOS) including the interfacial and semiconductor bulk trap densities.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Paraffin wax passivation layer improvements in electrical characteristics of bottom gate amorphous indium-gallium-zinc oxide thin-film transistors</title><author><name sortKey="Chang, Geng Wei" uniqKey="Chang G">Geng-Wei Chang</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Photonics & Institute of Electro-Optical Engineering, National Chiao Tung University</s1><s2>Hsin-Chu, 300</s2><s3>TWN</s3><sZ>1 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>Taïwan</country><wicri:noRegion>Hsin-Chu, 300</wicri:noRegion></affiliation></author><author><name sortKey="Chang, Ting Chang" uniqKey="Chang T">Ting-Chang Chang</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Physics and Center for Nanoscience & Nanotechnology, National Sun Yat-sen University, 70 Lien-hai Road</s1><s2>Kaohsiung</s2><s3>TWN</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Taïwan</country><wicri:noRegion>Kaohsiung</wicri:noRegion></affiliation></author><author><name sortKey="Syu, Yong En" uniqKey="Syu Y">Yong-En Syu</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Physics and Center for Nanoscience & Nanotechnology, National Sun Yat-sen University, 70 Lien-hai Road</s1><s2>Kaohsiung</s2><s3>TWN</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Taïwan</country><wicri:noRegion>Kaohsiung</wicri:noRegion></affiliation></author><author><name sortKey="Tsai, Tsung Ming" uniqKey="Tsai T">Tsung-Ming Tsai</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Institute of Materials Science and Engineering, National Sun Yat-Sen University, Kaohsiung, 70 Lien-hai Road</s1><s2>Kaohsiung, 804</s2><s3>TWN</s3><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Taïwan</country><wicri:noRegion>Kaohsiung, 804</wicri:noRegion></affiliation></author><author><name sortKey="Chang, Kuan Chang" uniqKey="Chang K">Kuan-Chang Chang</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Institute of Materials Science and Engineering, National Sun Yat-Sen University, Kaohsiung, 70 Lien-hai Road</s1><s2>Kaohsiung, 804</s2><s3>TWN</s3><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Taïwan</country><wicri:noRegion>Kaohsiung, 804</wicri:noRegion></affiliation></author><author><name sortKey="Tu, Chun Hao" uniqKey="Tu C">Chun-Hao Tu</name><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Institute of Electronics, National Chiao Tung University</s1><s2>Hsin-Chu, 300</s2><s3>TWN</s3><sZ>6 aut.</sZ></inist:fA14><country>Taïwan</country><wicri:noRegion>Hsin-Chu, 300</wicri:noRegion></affiliation></author><author><name sortKey="Jian, Fu Yen" uniqKey="Jian F">Fu-Yen Jian</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Physics and Center for Nanoscience & Nanotechnology, National Sun Yat-sen University, 70 Lien-hai Road</s1><s2>Kaohsiung</s2><s3>TWN</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Taïwan</country><wicri:noRegion>Kaohsiung</wicri:noRegion></affiliation></author><author><name sortKey="Hung, Ya Chi" uniqKey="Hung Y">Ya-Chi Hung</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Institute of Materials Science and Engineering, National Sun Yat-Sen University, Kaohsiung, 70 Lien-hai Road</s1><s2>Kaohsiung, 804</s2><s3>TWN</s3><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Taïwan</country><wicri:noRegion>Kaohsiung, 804</wicri:noRegion></affiliation></author><author><name sortKey="Tai, Ya Hsiang" uniqKey="Tai Y">Ya-Hsiang Tai</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Photonics & Institute of Electro-Optical Engineering, National Chiao Tung University</s1><s2>Hsin-Chu, 300</s2><s3>TWN</s3><sZ>1 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>Taïwan</country><wicri:noRegion>Hsin-Chu, 300</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">12-0228690</idno><date when="2011">2011</date><idno type="stanalyst">PASCAL 12-0228690 INIST</idno><idno type="RBID">Pascal:12-0228690</idno><idno type="wicri:Area/Main/Corpus">001D39</idno><idno type="wicri:Area/Main/Repository">002807</idno></publicationStmt><seriesStmt><idno type="ISSN">0040-6090</idno><title level="j" type="abbreviated">Thin solid films</title><title level="j" type="main">Thin solid films</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Density of states</term><term>Electrical characteristic</term><term>Electronic density of states</term><term>Flat panel displays</term><term>Gallium Indium Zinc Oxides Mixed</term><term>Gallium tellurides</term><term>Gates</term><term>Photoinduced effect</term><term>Semiconductor materials</term><term>Sol gel process</term><term>Stress effects</term><term>Thin film transistor</term><term>Wax</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Caractéristique électrique</term><term>Electrode commande</term><term>Transistor couche mince</term><term>Procédé sol gel</term><term>Affichage écran plat</term><term>Effet contrainte</term><term>Effet photoinduit</term><term>Densité état</term><term>Densité état électron</term><term>Cire</term><term>Tellurure de gallium</term><term>Gallium Indium Zinc Oxyde Mixte</term><term>Semiconducteur</term><term>Paraffine</term><term>8530T</term><term>8115L</term><term>7320A</term><term>8530P</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Paraffine</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">In this research, paraffin wax is employed as the passivation layer of the bottom gate amorphous indium-gallium-zinc oxide thin-film transistors (a-IGZO TFTs), and it is formed by sol-gel process in the atmosphere. The high yield and low cost passivation layer of sol-gel process technology has attracted much attention for current flat-panel-display manufacturing. Comparing with passivation-free a-IGZO TFTs, passivated devices exhibit a superior stability against positive gate bias stress in different ambient gas, demonstrating that paraffin wax shows gas-resisting characteristics for a-IGZO TFTs application. Furthermore, light-induced stretch-out phenomenon for paraffin wax passivated device is suppressed. This superior stability of the passivated device was attributed to the reduced total density of states (DOS) including the interfacial and semiconductor bulk trap densities.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0040-6090</s0></fA01><fA02 i1="01"><s0>THSFAP</s0></fA02><fA03 i2="1"><s0>Thin solid films</s0></fA03><fA05><s2>520</s2></fA05><fA06><s2>5</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Paraffin wax passivation layer improvements in electrical characteristics of bottom gate amorphous indium-gallium-zinc oxide thin-film transistors</s1></fA08><fA09 i1="01" i2="1" l="ENG"><s1>Proceedings of the 38th International Conference on Metallurgical Coatings and Thin Films (ICMCTF), San Diego, California (USA), May 2-6, 2011</s1></fA09><fA11 i1="01" i2="1"><s1>CHANG (Geng-Wei)</s1></fA11><fA11 i1="02" i2="1"><s1>CHANG (Ting-Chang)</s1></fA11><fA11 i1="03" i2="1"><s1>SYU (Yong-En)</s1></fA11><fA11 i1="04" i2="1"><s1>TSAI (Tsung-Ming)</s1></fA11><fA11 i1="05" i2="1"><s1>CHANG (Kuan-Chang)</s1></fA11><fA11 i1="06" i2="1"><s1>TU (Chun-Hao)</s1></fA11><fA11 i1="07" i2="1"><s1>JIAN (Fu-Yen)</s1></fA11><fA11 i1="08" i2="1"><s1>HUNG (Ya-Chi)</s1></fA11><fA11 i1="09" i2="1"><s1>TAI (Ya-Hsiang)</s1></fA11><fA12 i1="01" i2="1"><s1>ABADIAS (Gregory)</s1><s9>ed.</s9></fA12><fA12 i1="02" i2="1"><s1>MURATORE (Chris)</s1><s9>ed.</s9></fA12><fA12 i1="03" i2="1"><s1>PETROV (Ivan)</s1><s9>ed.</s9></fA12><fA12 i1="04" i2="1"><s1>REBHOLZ (Claus)</s1><s9>ed.</s9></fA12><fA12 i1="05" i2="1"><s1>STÜBER (Michael)</s1><s9>ed.</s9></fA12><fA14 i1="01"><s1>Department of Photonics & Institute of Electro-Optical Engineering, National Chiao Tung University</s1><s2>Hsin-Chu, 300</s2><s3>TWN</s3><sZ>1 aut.</sZ><sZ>9 aut.</sZ></fA14><fA14 i1="02"><s1>Department of Physics and Center for Nanoscience & Nanotechnology, National Sun Yat-sen University, 70 Lien-hai Road</s1><s2>Kaohsiung</s2><s3>TWN</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>7 aut.</sZ></fA14><fA14 i1="03"><s1>Institute of Materials Science and Engineering, National Sun Yat-Sen University, Kaohsiung, 70 Lien-hai Road</s1><s2>Kaohsiung, 804</s2><s3>TWN</s3><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>8 aut.</sZ></fA14><fA14 i1="04"><s1>Institute of Electronics, National Chiao Tung University</s1><s2>Hsin-Chu, 300</s2><s3>TWN</s3><sZ>6 aut.</sZ></fA14><fA15 i1="01"><s1>University of Poitiers, Laboratoire de Physique des Matériaux, CNRS, SP2MI, Teleport 2, Bd. Marie et Pierre Curie</s1><s2>86982 Chasseneuil Futuroscope</s2><s3>FRA</s3><sZ>1 aut.</sZ></fA15><fA15 i1="02"><s1>Air Force Research Laboratory, Materials and Manufacturing Directorate, Thermal Sciences & Materials Branch, Wright-Patterson AFB</s1><s2>OH 45433</s2><s3>USA</s3><sZ>2 aut.</sZ></fA15><fA15 i1="03"><s1>University of Illinois, Frederick Seitz Materials Research Laboratory, 104 S. Goodwin Avenue</s1><s2>Urbana, IL 61801</s2><s3>USA</s3><sZ>3 aut.</sZ></fA15><fA15 i1="04"><s1>University of Cyprus, Mechanical & Manufacturing Engineering, 75 Kallipoleos Street</s1><s2>1678 Nicosia</s2><s3>CYP</s3><sZ>4 aut.</sZ></fA15><fA15 i1="05"><s1>Karlsruhe Institute of Technology (KIT), Institute for Applied Materials (IAM), Hermann-von-Helmoltz-Platz 1</s1><s2>76344 Eggenstein-Leopoldshafen</s2><s3>DEU</s3><sZ>5 aut.</sZ></fA15><fA20><s1>1608-1611</s1></fA20><fA21><s1>2011</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>13597</s2><s5>354000502899420440</s5></fA43><fA44><s0>0000</s0><s1>© 2012 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>20 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>12-0228690</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Thin solid films</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>In this research, paraffin wax is employed as the passivation layer of the bottom gate amorphous indium-gallium-zinc oxide thin-film transistors (a-IGZO TFTs), and it is formed by sol-gel process in the atmosphere. The high yield and low cost passivation layer of sol-gel process technology has attracted much attention for current flat-panel-display manufacturing. Comparing with passivation-free a-IGZO TFTs, passivated devices exhibit a superior stability against positive gate bias stress in different ambient gas, demonstrating that paraffin wax shows gas-resisting characteristics for a-IGZO TFTs application. Furthermore, light-induced stretch-out phenomenon for paraffin wax passivated device is suppressed. This superior stability of the passivated device was attributed to the reduced total density of states (DOS) including the interfacial and semiconductor bulk trap densities.</s0></fC01><fC02 i1="01" i2="X"><s0>001D03F04</s0></fC02><fC02 i1="02" i2="3"><s0>001B80A15L</s0></fC02><fC02 i1="03" i2="3"><s0>001B70C20A</s0></fC02><fC03 i1="01" i2="X" l="FRE"><s0>Caractéristique électrique</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="ENG"><s0>Electrical characteristic</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="SPA"><s0>Característica eléctrica</s0><s5>01</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Electrode commande</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Gates</s0><s5>02</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Transistor couche mince</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>Thin film transistor</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="SPA"><s0>Transistor capa delgada</s0><s5>03</s5></fC03><fC03 i1="04" i2="X" l="FRE"><s0>Procédé sol gel</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="ENG"><s0>Sol gel process</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="SPA"><s0>Procedimiento sol gel</s0><s5>04</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Affichage écran plat</s0><s5>05</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Flat panel displays</s0><s5>05</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Effet contrainte</s0><s5>06</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Stress effects</s0><s5>06</s5></fC03><fC03 i1="07" i2="X" l="FRE"><s0>Effet photoinduit</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="ENG"><s0>Photoinduced effect</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="SPA"><s0>Efecto fotoinducido</s0><s5>07</s5></fC03><fC03 i1="08" i2="X" l="FRE"><s0>Densité état</s0><s5>08</s5></fC03><fC03 i1="08" i2="X" l="ENG"><s0>Density of states</s0><s5>08</s5></fC03><fC03 i1="08" i2="X" l="SPA"><s0>Densidad estado</s0><s5>08</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Densité état électron</s0><s5>09</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Electronic density of states</s0><s5>09</s5></fC03><fC03 i1="10" i2="X" l="FRE"><s0>Cire</s0><s5>15</s5></fC03><fC03 i1="10" i2="X" l="ENG"><s0>Wax</s0><s5>15</s5></fC03><fC03 i1="10" i2="X" l="SPA"><s0>Cera</s0><s5>15</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Tellurure de gallium</s0><s2>NK</s2><s5>16</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Gallium tellurides</s0><s2>NK</s2><s5>16</s5></fC03><fC03 i1="12" i2="X" l="FRE"><s0>Gallium Indium Zinc Oxyde Mixte</s0><s2>NC</s2><s2>FX</s2><s2>NA</s2><s5>17</s5></fC03><fC03 i1="12" i2="X" l="ENG"><s0>Gallium Indium Zinc Oxides Mixed</s0><s2>NC</s2><s2>FX</s2><s2>NA</s2><s5>17</s5></fC03><fC03 i1="12" i2="X" l="SPA"><s0>Galio Indio Zinc Óxido Mixto</s0><s2>NC</s2><s2>FX</s2><s2>NA</s2><s5>17</s5></fC03><fC03 i1="13" i2="X" l="FRE"><s0>Semiconducteur</s0><s5>18</s5></fC03><fC03 i1="13" i2="X" l="ENG"><s0>Semiconductor materials</s0><s5>18</s5></fC03><fC03 i1="13" i2="X" l="SPA"><s0>Semiconductor(material)</s0><s5>18</s5></fC03><fC03 i1="14" i2="X" l="FRE"><s0>Paraffine</s0><s4>INC</s4><s5>46</s5></fC03><fC03 i1="15" i2="X" l="FRE"><s0>8530T</s0><s4>INC</s4><s5>71</s5></fC03><fC03 i1="16" i2="X" l="FRE"><s0>8115L</s0><s4>INC</s4><s5>72</s5></fC03><fC03 i1="17" i2="X" l="FRE"><s0>7320A</s0><s4>INC</s4><s5>73</s5></fC03><fC03 i1="18" i2="X" l="FRE"><s0>8530P</s0><s4>INC</s4><s5>74</s5></fC03><fN21><s1>177</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA><pR><fA30 i1="01" i2="1" l="ENG"><s1>International Conference on Metallurgical Coatings and Thin Films (ICMCTF)</s1><s2>38</s2><s3>San Diego, California USA</s3><s4>2011-05-02</s4></fA30></pR></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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