IndiumV3, Main, Repository, bibRecord, 002743

Plasmon resonance response to millimeter-waves of grating-gated InGaAs/InP HEMT

Identifieur interne : 002743 ( Main/Repository ); précédent : 002742; suivant : 002744

Plasmon resonance response to millimeter-waves of grating-gated InGaAs/InP HEMT

Auteurs : RBID : Pascal:11-0452810

Descripteurs français

Pascal (Inist)
- Modulation fréquence, Imagerie, Méthode mesure, Domaine fréquence THz, Composé binaire, Semiconducteur III-V, Indium Phosphure, Composé ternaire, Gallium Arséniure, Indium Arséniure, Homme, Circuit HEMT, Oscillateur onde régressive, Dispositif onde millimétrique, InGaAs, In P, As Ga In, InGaAs/InP, InP, 0130C, 0757, 7320M.
Wicri :
- concept : Homme.

English descriptors

KwdEn :
- Backward wave oscillators, Binary compounds, Frequency modulation, Gallium Arsenides, HEMT circuits, III-V semiconductors, Imagery, Indium Arsenides, Indium Phosphides, Man, Measuring methods, Millimeter wave devices, THz range, Ternary compounds.

Abstract

Tunable resonant absorption by plasmons in the two-dimensional electron gas (2DEG) of grating-gated HEMTs is known for a variety of semiconductor systems, giving promise of chip-scale frequency- agile THz imaging spectrometers. In this work, we present our approach to measurement of electrical response to millimeter waves from backward-wave oscillators (BWO) in the range 40-1 10 GHz for InP-based HEMTs. Frequency-modulation of the BWO with lock-in amplification of the source-drain current gives an output proportional to the change in absorption with frequency without contribution from non-resonant response. This is a first step in optimizing such devices for man-portable or space-based spectral-sensing applications.

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Pascal:11-0452810

Le document en format XML

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<author><name sortKey="Medhi, Guatam" uniqKey="Medhi G">Guatam Medhi</name>
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<front><div type="abstract" xml:lang="en">Tunable resonant absorption by plasmons in the two-dimensional electron gas (2DEG) of grating-gated HEMTs is known for a variety of semiconductor systems, giving promise of chip-scale frequency- agile THz imaging spectrometers. In this work, we present our approach to measurement of electrical response to millimeter waves from backward-wave oscillators (BWO) in the range 40-1 10 GHz for InP-based HEMTs. Frequency-modulation of the BWO with lock-in amplification of the source-drain current gives an output proportional to the change in absorption with frequency without contribution from non-resonant response. This is a first step in optimizing such devices for man-portable or space-based spectral-sensing applications.</div>
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   |texte=   Plasmon resonance response to millimeter-waves of grating-gated InGaAs/InP HEMT
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Plasmon resonance response to millimeter-waves of grating-gated InGaAs/InP HEMT

Plasmon resonance response to millimeter-waves of grating-gated InGaAs/InP HEMT

Descripteurs français

English descriptors

Abstract

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