Temperature-dependent Raman investigation of CulnS2 with mixed phases of chalcopyrite and CuAu
Identifieur interne : 002365 ( Main/Repository ); précédent : 002364; suivant : 002366Temperature-dependent Raman investigation of CulnS2 with mixed phases of chalcopyrite and CuAu
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Abstract
CuInS2 thin films with mixed phases of chalcopyrite (CH) and CuAu (CA) were prepared by using sulfurization of co-evaporated Cu-In alloy films. Detailed temperature-dependent Raman scattering was carried out on the CuIS2 films at temperatures ranging from 83 to 693 K. The temperature dependences of Raman shifts were well fitted by using the Ridley model for both the CH and the CA A1 modes. The Raman frequency softening upon increasing the sample temperature could be well described by the combined contributions of both thermal expansion and threelfour-phonon- anharmonic processes. Different Raman linewidths broadening behaviors were observed for the CH and CA A1 modes at temperature below ∼400 K. For the CH A1 mode, the fitting using multiple-phonon anharmonic process matched the experimental linewidth data very well, while for the CA A1 mode, the multiple-phonon fitting could only match the experimental linewidth data at high temperature. At low temperature, the unusual temperature-dependent broadening of the CA A1 mode was believed to arise from the phonon scattering at the CH/CA phase boundary, which encompassed the nano-sized CA domains embedded in the CH crystallite. It was found that the intensity ratio between CA A1 and CH A1 modes (I(CA)/I(CH)) was more reliable in assessment of CH crystallinity at different temperature than CH A1 linewidth. According to the temperature dependence of I(CA)/I(CH), it showed that no phase transformation took place during the test.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Temperature-dependent Raman investigation of CulnS<sub>2</sub> with mixed phases of chalcopyrite and CuAu</title><author><name>KUNJIE WU</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China</s1><s2>Hefei, Anhui 230026</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Hefei, Anhui 230026</wicri:noRegion></affiliation></author><author><name>DELIANG WANG</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China</s1><s2>Hefei, Anhui 230026</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Hefei, Anhui 230026</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>CAS Key Laboratory of Energy Conversion Materials, University of Science and Technology of China</s1><s2>Hefei, Anhui 230026</s2><s3>CHN</s3><sZ>2 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Hefei, Anhui 230026</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">12-0036047</idno><date when="2011">2011</date><idno type="stanalyst">PASCAL 12-0036047 INIST</idno><idno type="RBID">Pascal:12-0036047</idno><idno type="wicri:Area/Main/Corpus">002422</idno><idno type="wicri:Area/Main/Repository">002365</idno></publicationStmt><seriesStmt><idno type="ISSN">1862-6300</idno><title level="j" type="abbreviated">Phys. status solidi, A Appl. mater. sci. : (Print)</title><title level="j" type="main">Physica status solidi. A, Applications and materials science : (Print)</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Anharmonic lattice modes</term><term>Chalcopyrite</term><term>Copper Indium Sulfides Mixed</term><term>Crystallinity</term><term>Line widths</term><term>Multi-phonon processes</term><term>Phase boundaries</term><term>Phase separation</term><term>Phonon mode</term><term>Raman spectra</term><term>Soft modes</term><term>Sulfidation</term><term>Temperature effects</term><term>Thermal expansion</term><term>Thin films</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Effet température</term><term>Sulfuration</term><term>Spectre Raman</term><term>Dilatation thermique</term><term>Mode phonon</term><term>Largeur raie</term><term>Processus n phonons</term><term>Mode mou</term><term>Joint phase</term><term>Séparation phase</term><term>Mode vibration anharmonique</term><term>Cristallinité</term><term>Chalcopyrite</term><term>Cuivre Indium Sulfure Mixte</term><term>Couche mince</term><term>CuInS2</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">CuInS<sub>2</sub> thin films with mixed phases of chalcopyrite (CH) and CuAu (CA) were prepared by using sulfurization of co-evaporated Cu-In alloy films. Detailed temperature-dependent Raman scattering was carried out on the CuIS<sub>2</sub> films at temperatures ranging from 83 to 693 K. The temperature dependences of Raman shifts were well fitted by using the Ridley model for both the CH and the CA A<sub>1</sub> modes. The Raman frequency softening upon increasing the sample temperature could be well described by the combined contributions of both thermal expansion and threelfour-phonon- anharmonic processes. Different Raman linewidths broadening behaviors were observed for the CH and CA A<sub>1</sub> modes at temperature below ∼400 K. For the CH A<sub>1</sub> mode, the fitting using multiple-phonon anharmonic process matched the experimental linewidth data very well, while for the CA A<sub>1</sub> mode, the multiple-phonon fitting could only match the experimental linewidth data at high temperature. At low temperature, the unusual temperature-dependent broadening of the CA A<sub>1</sub> mode was believed to arise from the phonon scattering at the CH/CA phase boundary, which encompassed the nano-sized CA domains embedded in the CH crystallite. It was found that the intensity ratio between CA A<sub>1</sub> and CH A<sub>1</sub> modes (I(CA)/I(CH)) was more reliable in assessment of CH crystallinity at different temperature than CH A<sub>1</sub> linewidth. According to the temperature dependence of I(CA)/I(CH), it showed that no phase transformation took place during the test.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1862-6300</s0></fA01><fA03 i2="1"><s0>Phys. status solidi, A Appl. mater. sci. : (Print)</s0></fA03><fA05><s2>208</s2></fA05><fA06><s2>12</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Temperature-dependent Raman investigation of CulnS<sub>2</sub> with mixed phases of chalcopyrite and CuAu</s1></fA08><fA11 i1="01" i2="1"><s1>KUNJIE WU</s1></fA11><fA11 i1="02" i2="1"><s1>DELIANG WANG</s1></fA11><fA14 i1="01"><s1>Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China</s1><s2>Hefei, Anhui 230026</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></fA14><fA14 i1="02"><s1>CAS Key Laboratory of Energy Conversion Materials, University of Science and Technology of China</s1><s2>Hefei, Anhui 230026</s2><s3>CHN</s3><sZ>2 aut.</sZ></fA14><fA20><s1>2730-2736</s1></fA20><fA21><s1>2011</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10183A</s2><s5>354000507355060030</s5></fA43><fA44><s0>0000</s0><s1>© 2012 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>40 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>12-0036047</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Physica status solidi. A, Applications and materials science : (Print)</s0></fA64><fA66 i1="01"><s0>DEU</s0></fA66><fC01 i1="01" l="ENG"><s0>CuInS<sub>2</sub> thin films with mixed phases of chalcopyrite (CH) and CuAu (CA) were prepared by using sulfurization of co-evaporated Cu-In alloy films. Detailed temperature-dependent Raman scattering was carried out on the CuIS<sub>2</sub> films at temperatures ranging from 83 to 693 K. The temperature dependences of Raman shifts were well fitted by using the Ridley model for both the CH and the CA A<sub>1</sub> modes. The Raman frequency softening upon increasing the sample temperature could be well described by the combined contributions of both thermal expansion and threelfour-phonon- anharmonic processes. Different Raman linewidths broadening behaviors were observed for the CH and CA A<sub>1</sub> modes at temperature below ∼400 K. For the CH A<sub>1</sub> mode, the fitting using multiple-phonon anharmonic process matched the experimental linewidth data very well, while for the CA A<sub>1</sub> mode, the multiple-phonon fitting could only match the experimental linewidth data at high temperature. At low temperature, the unusual temperature-dependent broadening of the CA A<sub>1</sub> mode was believed to arise from the phonon scattering at the CH/CA phase boundary, which encompassed the nano-sized CA domains embedded in the CH crystallite. It was found that the intensity ratio between CA A<sub>1</sub> and CH A<sub>1</sub> modes (I(CA)/I(CH)) was more reliable in assessment of CH crystallinity at different temperature than CH A<sub>1</sub> linewidth. According to the temperature dependence of I(CA)/I(CH), it showed that no phase transformation took place during the test.</s0></fC01><fC02 i1="01" i2="3"><s0>001B60C20R</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Effet température</s0><s5>02</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Temperature effects</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Sulfuration</s0><s5>03</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Sulfidation</s0><s5>03</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Spectre Raman</s0><s5>04</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Raman spectra</s0><s5>04</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Dilatation thermique</s0><s5>05</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Thermal expansion</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="FRE"><s0>Mode phonon</s0><s5>06</s5></fC03><fC03 i1="05" i2="X" l="ENG"><s0>Phonon mode</s0><s5>06</s5></fC03><fC03 i1="05" i2="X" l="SPA"><s0>Modo fonón</s0><s5>06</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Largeur raie</s0><s5>07</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Line widths</s0><s5>07</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Processus n phonons</s0><s5>08</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Multi-phonon processes</s0><s5>08</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Mode mou</s0><s5>09</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Soft modes</s0><s5>09</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Joint phase</s0><s5>10</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Phase boundaries</s0><s5>10</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Séparation phase</s0><s5>11</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Phase separation</s0><s5>11</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Mode vibration anharmonique</s0><s5>12</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Anharmonic lattice modes</s0><s5>12</s5></fC03><fC03 i1="12" i2="X" l="FRE"><s0>Cristallinité</s0><s5>13</s5></fC03><fC03 i1="12" i2="X" l="ENG"><s0>Crystallinity</s0><s5>13</s5></fC03><fC03 i1="12" i2="X" l="SPA"><s0>Cristalinidad</s0><s5>13</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Chalcopyrite</s0><s5>15</s5></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Chalcopyrite</s0><s5>15</s5></fC03><fC03 i1="14" i2="X" l="FRE"><s0>Cuivre Indium Sulfure Mixte</s0><s2>NC</s2><s2>NA</s2><s5>16</s5></fC03><fC03 i1="14" i2="X" l="ENG"><s0>Copper Indium Sulfides Mixed</s0><s2>NC</s2><s2>NA</s2><s5>16</s5></fC03><fC03 i1="14" i2="X" l="SPA"><s0>Mixto</s0><s2>NC</s2><s2>NA</s2><s5>16</s5></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Couche mince</s0><s5>18</s5></fC03><fC03 i1="15" i2="3" l="ENG"><s0>Thin films</s0><s5>18</s5></fC03><fC03 i1="16" i2="3" l="FRE"><s0>CuInS2</s0><s4>INC</s4><s5>52</s5></fC03><fN21><s1>016</s1></fN21></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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