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The Effect of Active-Layer Thickness and Back-Channel Conductivity on the Subthreshold Transfer Characteristics of Hf-In-Zn-O TFTs

Identifieur interne : 002352 ( Main/Repository ); précédent : 002351; suivant : 002353

The Effect of Active-Layer Thickness and Back-Channel Conductivity on the Subthreshold Transfer Characteristics of Hf-In-Zn-O TFTs

Auteurs : RBID : Pascal:11-0366254

Descripteurs français

Pascal (Inist)
- Couche active, Caractéristique transfert, Transistor couche mince, Zinc, Oxyde d'hafnium, Oxyde d'indium, Oxyde de zinc.
Wicri :
- concept : Zinc.

English descriptors

KwdEn :
- Active layer, Hafnium oxide, Indium oxide, Thin film transistor, Transfer characteristic, Zinc, Zinc oxide.

Abstract

The effect of active-layer thickness and back-channel conductivity on the subthreshold transfer characteristics of hafnium-indium-zinc-oxide (HIZO) thin-film transistors was studied. Experiments show that subthreshold humps in the transfer curves become more pronounced as the active-layer thickness increases, in the presence of a highly conductive back channel. With a highly conductive thin back channel, subthreshold humps were observed as the total active-layer thickness exceeded 80 nm. The above results can be interpreted as a consequence of a reduction in the effective gate field as the active thickness exceeds the "screening length". The screening length of the HIZO layer is calculated to be approximately 78 nm, and accordingly, as the active thickness exceeds this value, subthreshold humps that are anticipated to originate from the back-channel conduction appear.

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Pascal:11-0366254

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<author><name sortKey="Ryu, Myungkwan" uniqKey="Ryu M">Myungkwan Ryu</name>
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<front><div type="abstract" xml:lang="en">The effect of active-layer thickness and back-channel conductivity on the subthreshold transfer characteristics of hafnium-indium-zinc-oxide (HIZO) thin-film transistors was studied. Experiments show that subthreshold humps in the transfer curves become more pronounced as the active-layer thickness increases, in the presence of a highly conductive back channel. With a highly conductive thin back channel, subthreshold humps were observed as the total active-layer thickness exceeded 80 nm. The above results can be interpreted as a consequence of a reduction in the effective gate field as the active thickness exceeds the "screening length". The screening length of the HIZO layer is calculated to be approximately 78 nm, and accordingly, as the active thickness exceeds this value, subthreshold humps that are anticipated to originate from the back-channel conduction appear.</div>
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The Effect of Active-Layer Thickness and Back-Channel Conductivity on the Subthreshold Transfer Characteristics of Hf-In-Zn-O TFTs

The Effect of Active-Layer Thickness and Back-Channel Conductivity on the Subthreshold Transfer Characteristics of Hf-In-Zn-O TFTs

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri