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Dynamic Processes of Resistive Switching in Metallic Filament-Based Organic Memory Devices

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Dynamic Processes of Resistive Switching in Metallic Filament-Based Organic Memory Devices

Auteurs : RBID : Pascal:12-0397823

Descripteurs français

Pascal (Inist)
- Commutation, Dispositif à mémoire, Rupture, Butyrique dérivé polymère, Oxyde d'indium, Oxyde d'étain, Eclairement, Propriété symétrie, Caractéristique courant tension, Structure bande, Interface, Mémoire, Fil, Electrolyte solide, Thiophène dérivé polymère, 8550.
Wicri :
- concept : Fil.

English descriptors

KwdEn :
- Band structure, Butyric derivative polymer, Illumination, Indium oxide, Interface, Memory, Memory devices, Rupture, Solid electrolyte, Switching, Symmetry property, Thiophene derivative polymer, Thread, Tin oxide, Voltage current curve.

Abstract

Dynamic formation/rupture processes of metallic filament have been clarified in solid electrolyte- and oxide-based resistive memory devices, whereas they remain exclusive in organic ones. Here we report these dynamic processes in Cu/poly (3-hexylthiophene):[6,6]-phenyl C61-butyric acid methyl ester/indium-tin oxide (ITO) structure, which exhibits a typical bipolar resistive switching effect. Under illumination, an open circuit voltage of -0.15 V exists in high-resistance state, yet it vanishes in low-resistance state owing to the emergence of Cu filament. By combining the symmetry of current-voltage curves with corresponding energy band diagrams in different resistance states, it is demonstrated that the Cu filament grows from Cu/organics interface, ends at organics/ITO interface, and ruptures near organics/ITO interface. This work might advance the insight into resistive switching mechanisms in organic-based resistive memories.

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Pascal:12-0397823

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Dynamic Processes of Resistive Switching in Metallic Filament-Based Organic Memory Devices</title>
<author><name>SHUANG GAO</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Laboratory of Advanced Materials, Department of Materials Science and Engineering, Tsinghua University</s1>
<s2>Beijing 100084</s2>
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<country>République populaire de Chine</country>
<placeName><settlement type="city">Pékin</settlement>
</placeName>
</affiliation>
</author>
<author><name>CHENG SONG</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Laboratory of Advanced Materials, Department of Materials Science and Engineering, Tsinghua University</s1>
<s2>Beijing 100084</s2>
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<country>République populaire de Chine</country>
<placeName><settlement type="city">Pékin</settlement>
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<author><name>CHAO CHEN</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Laboratory of Advanced Materials, Department of Materials Science and Engineering, Tsinghua University</s1>
<s2>Beijing 100084</s2>
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<country>République populaire de Chine</country>
<placeName><settlement type="city">Pékin</settlement>
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<author><name>FEI ZENG</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Laboratory of Advanced Materials, Department of Materials Science and Engineering, Tsinghua University</s1>
<s2>Beijing 100084</s2>
<s3>CHN</s3>
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<placeName><settlement type="city">Pékin</settlement>
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<author><name>FENG PAN</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Laboratory of Advanced Materials, Department of Materials Science and Engineering, Tsinghua University</s1>
<s2>Beijing 100084</s2>
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<country>République populaire de Chine</country>
<placeName><settlement type="city">Pékin</settlement>
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<date when="2012">2012</date>
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<title level="j" type="abbreviated">J. phys. chem., C</title>
<title level="j" type="main">Journal of physical chemistry. C</title>
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<term>Butyric derivative polymer</term>
<term>Illumination</term>
<term>Indium oxide</term>
<term>Interface</term>
<term>Memory</term>
<term>Memory devices</term>
<term>Rupture</term>
<term>Solid electrolyte</term>
<term>Switching</term>
<term>Symmetry property</term>
<term>Thiophene derivative polymer</term>
<term>Thread</term>
<term>Tin oxide</term>
<term>Voltage current curve</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Commutation</term>
<term>Dispositif à mémoire</term>
<term>Rupture</term>
<term>Butyrique dérivé polymère</term>
<term>Oxyde d'indium</term>
<term>Oxyde d'étain</term>
<term>Eclairement</term>
<term>Propriété symétrie</term>
<term>Caractéristique courant tension</term>
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<term>Mémoire</term>
<term>Fil</term>
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<front><div type="abstract" xml:lang="en">Dynamic formation/rupture processes of metallic filament have been clarified in solid electrolyte- and oxide-based resistive memory devices, whereas they remain exclusive in organic ones. Here we report these dynamic processes in Cu/poly (3-hexylthiophene):[6,6]-phenyl C61-butyric acid methyl ester/indium-tin oxide (ITO) structure, which exhibits a typical bipolar resistive switching effect. Under illumination, an open circuit voltage of -0.15 V exists in high-resistance state, yet it vanishes in low-resistance state owing to the emergence of Cu filament. By combining the symmetry of current-voltage curves with corresponding energy band diagrams in different resistance states, it is demonstrated that the Cu filament grows from Cu/organics interface, ends at organics/ITO interface, and ruptures near organics/ITO interface. This work might advance the insight into resistive switching mechanisms in organic-based resistive memories.</div>
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<fA11 i1="01" i2="1"><s1>SHUANG GAO</s1>
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<fA11 i1="02" i2="1"><s1>CHENG SONG</s1>
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<fA11 i1="03" i2="1"><s1>CHAO CHEN</s1>
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<fA11 i1="04" i2="1"><s1>FEI ZENG</s1>
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<fA11 i1="05" i2="1"><s1>FENG PAN</s1>
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<fA14 i1="01"><s1>Laboratory of Advanced Materials, Department of Materials Science and Engineering, Tsinghua University</s1>
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<fC01 i1="01" l="ENG"><s0>Dynamic formation/rupture processes of metallic filament have been clarified in solid electrolyte- and oxide-based resistive memory devices, whereas they remain exclusive in organic ones. Here we report these dynamic processes in Cu/poly (3-hexylthiophene):[6,6]-phenyl C61-butyric acid methyl ester/indium-tin oxide (ITO) structure, which exhibits a typical bipolar resistive switching effect. Under illumination, an open circuit voltage of -0.15 V exists in high-resistance state, yet it vanishes in low-resistance state owing to the emergence of Cu filament. By combining the symmetry of current-voltage curves with corresponding energy band diagrams in different resistance states, it is demonstrated that the Cu filament grows from Cu/organics interface, ends at organics/ITO interface, and ruptures near organics/ITO interface. This work might advance the insight into resistive switching mechanisms in organic-based resistive memories.</s0>
</fC01>
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<s5>01</s5>
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<fC03 i1="01" i2="X" l="ENG"><s0>Switching</s0>
<s5>01</s5>
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<s5>03</s5>
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<s5>05</s5>
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<s5>06</s5>
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<s5>06</s5>
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<s5>08</s5>
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<s5>09</s5>
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<s5>11</s5>
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<s5>11</s5>
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<s5>12</s5>
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<s5>15</s5>
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<s5>15</s5>
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<s5>15</s5>
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<s5>17</s5>
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<s2>NK</s2>
<s5>17</s5>
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<s2>NK</s2>
<s5>17</s5>
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<s4>INC</s4>
<s5>65</s5>
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<fN21><s1>310</s1>
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Dynamic Processes of Resistive Switching in Metallic Filament-Based Organic Memory Devices

Dynamic Processes of Resistive Switching in Metallic Filament-Based Organic Memory Devices

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

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