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High resolution X-ray diffraction study of InAs layers grown with and without bismuth flow on GaAs substrates by metalorganic vapor phase epitaxy

Identifieur interne : 001A99 ( Main/Repository ); précédent : 001A98; suivant : 001B00

High resolution X-ray diffraction study of InAs layers grown with and without bismuth flow on GaAs substrates by metalorganic vapor phase epitaxy

Auteurs : RBID : Pascal:12-0201159

Descripteurs français

Pascal (Inist)
- Diffraction RX, Méthode MOVPE, Mode opératoire, Structure mosaïque, Diagramme rotation, Orientation cristalline, Densité dislocation, Microscopie électronique balayage, Epaisseur, Arséniure d'indium, Bismuth, Nanopoint, Nanostructure, InAs, Substrat GaAs.
Wicri :
- concept : Bismuth.

English descriptors

KwdEn :
- Bismuth, Crystal orientation, Dislocation density, Indium arsenides, MOVPE method, Mosaic structure, Nanodot, Nanostructures, Operating mode, Rocking curve, Scanning electron microscopy, Thickness, XRD.

Abstract

InAs layers were grown with and without bismuth flow by atmospheric pressure metalorganic vapor phase epitaxy on exactly oriented, 2_° and 10°misoriented (100) GaAs substrates. Structural analysis was carried out using high resolution X-ray diffraction. Without bismuth flow, only InAs layers grown on 10_° misoriented substrates exhibit a mosaic structure. Layers grown on exactly oriented and 2° misoriented substrates show large full widths at half maxima of their diffraction rocking curves. Growing InAs under bismuth flow leads to the reduction of this full width indicating a clear improvement of their structural quality. Particularly for samples grown on 10_° misoriented substrates, a complete disappearance of the mosaic structure was obtained. The crystalline quality improvement is attributed to the contribution of Bi nanodots in relieving strain.

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Pascal:12-0201159

Le document en format XML

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<author><name sortKey="Mzoughi, T" uniqKey="Mzoughi T">T. Mzoughi</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Université de Monastir, Unité de Recherche sur les Hétéro-Epitaxies et Applications, Faculté des Sciences de Monastir</s1>
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<author><name sortKey="Fitouri, H" uniqKey="Fitouri H">H. Fitouri</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Université de Monastir, Unité de Recherche sur les Hétéro-Epitaxies et Applications, Faculté des Sciences de Monastir</s1>
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<author><name sortKey="Moussa, I" uniqKey="Moussa I">I. Moussa</name>
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<author><name sortKey="Rebey, A" uniqKey="Rebey A">A. Rebey</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Université de Monastir, Unité de Recherche sur les Hétéro-Epitaxies et Applications, Faculté des Sciences de Monastir</s1>
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<author><name sortKey="El Jani, B" uniqKey="El Jani B">B. El Jani</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Université de Monastir, Unité de Recherche sur les Hétéro-Epitaxies et Applications, Faculté des Sciences de Monastir</s1>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Bismuth</term>
<term>Crystal orientation</term>
<term>Dislocation density</term>
<term>Indium arsenides</term>
<term>MOVPE method</term>
<term>Mosaic structure</term>
<term>Nanodot</term>
<term>Nanostructures</term>
<term>Operating mode</term>
<term>Rocking curve</term>
<term>Scanning electron microscopy</term>
<term>Thickness</term>
<term>XRD</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Diffraction RX</term>
<term>Méthode MOVPE</term>
<term>Mode opératoire</term>
<term>Structure mosaïque</term>
<term>Diagramme rotation</term>
<term>Orientation cristalline</term>
<term>Densité dislocation</term>
<term>Microscopie électronique balayage</term>
<term>Epaisseur</term>
<term>Arséniure d'indium</term>
<term>Bismuth</term>
<term>Nanopoint</term>
<term>Nanostructure</term>
<term>InAs</term>
<term>Substrat GaAs</term>
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<front><div type="abstract" xml:lang="en">InAs layers were grown with and without bismuth flow by atmospheric pressure metalorganic vapor phase epitaxy on exactly oriented, 2<sub>°</sub>
 and 10°<sub> </sub>
misoriented (100) GaAs substrates. Structural analysis was carried out using high resolution X-ray diffraction. Without bismuth flow, only InAs layers grown on 10<sub>°</sub>
 misoriented substrates exhibit a mosaic structure. Layers grown on exactly oriented and 2° misoriented substrates show large full widths at half maxima of their diffraction rocking curves. Growing InAs under bismuth flow leads to the reduction of this full width indicating a clear improvement of their structural quality. Particularly for samples grown on 10<sub>°</sub>
 misoriented substrates, a complete disappearance of the mosaic structure was obtained. The crystalline quality improvement is attributed to the contribution of Bi nanodots in relieving strain.</div>
</front>
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<fC01 i1="01" l="ENG"><s0>InAs layers were grown with and without bismuth flow by atmospheric pressure metalorganic vapor phase epitaxy on exactly oriented, 2<sub>°</sub>
 and 10°<sub> </sub>
misoriented (100) GaAs substrates. Structural analysis was carried out using high resolution X-ray diffraction. Without bismuth flow, only InAs layers grown on 10<sub>°</sub>
 misoriented substrates exhibit a mosaic structure. Layers grown on exactly oriented and 2° misoriented substrates show large full widths at half maxima of their diffraction rocking curves. Growing InAs under bismuth flow leads to the reduction of this full width indicating a clear improvement of their structural quality. Particularly for samples grown on 10<sub>°</sub>
 misoriented substrates, a complete disappearance of the mosaic structure was obtained. The crystalline quality improvement is attributed to the contribution of Bi nanodots in relieving strain.</s0>
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<s5>06</s5>
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<s2>NK</s2>
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<s4>INC</s4>
<s5>53</s5>
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High resolution X-ray diffraction study of InAs layers grown with and without bismuth flow on GaAs substrates by metalorganic vapor phase epitaxy

High resolution X-ray diffraction study of InAs layers grown with and without bismuth flow on GaAs substrates by metalorganic vapor phase epitaxy

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri