Improvement of ITO-free inverted polymer-based solar cells by using colloidal zinc oxide nanocrystals as electron-selective buffer layer
Identifieur interne : 001A40 ( Main/Repository ); précédent : 001A39; suivant : 001A41Improvement of ITO-free inverted polymer-based solar cells by using colloidal zinc oxide nanocrystals as electron-selective buffer layer
Auteurs : RBID : Pascal:12-0421738Descripteurs français
- Pascal (Inist)
- Addition étain, Cellule solaire organique, Couche active, Cathode, Méthode en solution, Synthèse chimique, Basse température, Caractéristique optique, Propriété optique, Structure électronique, Propriété électronique, Diffraction RX, Méthode Rietveld, Cristallite, Dimension particule, Voltammétrie cyclique, Hétérojonction, Cellule solaire, Couche intermédiaire, Couche interfaciale, Effet photovoltaïque, Oxyde d'indium, Oxyde de zinc, Nanocristal, Couche tampon, Fullerènes, Couche oxyde, Poudre, Hétérostructure, Thiophène dérivé polymère, Ester, Acide butyrique, Composé du fullerène, Matériau dopé, 8105T, 8116B, 7867, 7322, ITO, ZnO, 7321, 8245R, 8460J.
English descriptors
- KwdEn :
- Active layer, Buffer layer, Butyric acid, Cathode, Chemical synthesis, Crystallites, Cyclic voltammetry, Doped materials, Electronic properties, Electronic structure, Ester, Fullerene compounds, Fullerenes, Growth from solution, Heterojunction, Heterostructures, Indium oxide, Interfacial layer, Interlayers, Low temperature, Nanocrystal, Optical characteristic, Optical properties, Organic solar cells, Oxide layer, Particle size, Photovoltaic effect, Powder, Rietveld method, Solar cell, Thiophene derivative polymer, Tin addition, X ray diffraction, Zinc oxide.
Abstract
In this study, we report on the improvement of ITO-free inverted polymer/fullerene solar cells by introducing a zinc oxide (ZnO) layer between the active layer and the cathode. The ZnO layers are deposited from solution, using colloidal ZnO nanocrystals with a rodlike shape, which are obtained using a wet-chemical synthesis route at low temperature. The nanocrystals are widely characterized with respect to their structural, optical, and electronic properties. In particular, simulations of powder X-ray diffraction data based on Rietveld refinement are shown to be a suitable method to characterize the average crystallite shape and particle size. Cyclic voltammetry reveals that nanocrystalline ZnO is an appropriate choice as electron-selective buffer layer in organic solar cells based on a bulk heterojunction of poly (3-hexylthiophene) (P3HT) and [6,6]-phenyl-C61-butyric acid methyl ester (PCBM). Using ITO-free inverted solar cells in substrate configuration with an opaque Cr/Al/ Cr bottom electrode, we demonstrate that introducing a cathodic interlayer of ZnO nanocrystals leads to a notable enhancement in photovoltaic performance. The magnitude of the effect is found to depend on the solvents used to process the active layer. In case of absorber blends processed from o-dichlorobenzene, we show an almost threefold increase in efficiency from 0.8 to 2.2% at an active area of 1 cm2.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Improvement of ITO-free inverted polymer-based solar cells by using colloidal zinc oxide nanocrystals as electron-selective buffer layer</title><author><name sortKey="Wilken, Sebastian" uniqKey="Wilken S">Sebastian Wilken</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Physics, Energy and Semiconductor Research Laboratory, Carl von Ossietzky University of Oldenburg</s1><s2>26111 Oldenburg</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Allemagne</country><wicri:noRegion>26111 Oldenburg</wicri:noRegion><wicri:noRegion>Carl von Ossietzky University of Oldenburg</wicri:noRegion><wicri:noRegion>26111 Oldenburg</wicri:noRegion></affiliation></author><author><name sortKey="Scheunemann, Dorothea" uniqKey="Scheunemann D">Dorothea Scheunemann</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Physics, Energy and Semiconductor Research Laboratory, Carl von Ossietzky University of Oldenburg</s1><s2>26111 Oldenburg</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Allemagne</country><wicri:noRegion>26111 Oldenburg</wicri:noRegion><wicri:noRegion>Carl von Ossietzky University of Oldenburg</wicri:noRegion><wicri:noRegion>26111 Oldenburg</wicri:noRegion></affiliation></author><author><name sortKey="Wilkens, Verena" uniqKey="Wilkens V">Verena Wilkens</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Physics, Energy and Semiconductor Research Laboratory, Carl von Ossietzky University of Oldenburg</s1><s2>26111 Oldenburg</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Allemagne</country><wicri:noRegion>26111 Oldenburg</wicri:noRegion><wicri:noRegion>Carl von Ossietzky University of Oldenburg</wicri:noRegion><wicri:noRegion>26111 Oldenburg</wicri:noRegion></affiliation></author><author><name sortKey="Parisi, J Rgen" uniqKey="Parisi J">J Rgen Parisi</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Physics, Energy and Semiconductor Research Laboratory, Carl von Ossietzky University of Oldenburg</s1><s2>26111 Oldenburg</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Allemagne</country><wicri:noRegion>26111 Oldenburg</wicri:noRegion><wicri:noRegion>Carl von Ossietzky University of Oldenburg</wicri:noRegion><wicri:noRegion>26111 Oldenburg</wicri:noRegion></affiliation></author><author><name sortKey="Borchert, Holger" uniqKey="Borchert H">Holger Borchert</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Physics, Energy and Semiconductor Research Laboratory, Carl von Ossietzky University of Oldenburg</s1><s2>26111 Oldenburg</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Allemagne</country><wicri:noRegion>26111 Oldenburg</wicri:noRegion><wicri:noRegion>Carl von Ossietzky University of Oldenburg</wicri:noRegion><wicri:noRegion>26111 Oldenburg</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">12-0421738</idno><date when="2012">2012</date><idno type="stanalyst">PASCAL 12-0421738 INIST</idno><idno type="RBID">Pascal:12-0421738</idno><idno type="wicri:Area/Main/Corpus">001670</idno><idno type="wicri:Area/Main/Repository">001A40</idno></publicationStmt><seriesStmt><idno type="ISSN">1566-1199</idno><title level="j" type="abbreviated">Org. electron. : (Print)</title><title level="j" type="main">Organic electronics : (Print)</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Active layer</term><term>Buffer layer</term><term>Butyric acid</term><term>Cathode</term><term>Chemical synthesis</term><term>Crystallites</term><term>Cyclic voltammetry</term><term>Doped materials</term><term>Electronic properties</term><term>Electronic structure</term><term>Ester</term><term>Fullerene compounds</term><term>Fullerenes</term><term>Growth from solution</term><term>Heterojunction</term><term>Heterostructures</term><term>Indium oxide</term><term>Interfacial layer</term><term>Interlayers</term><term>Low temperature</term><term>Nanocrystal</term><term>Optical characteristic</term><term>Optical properties</term><term>Organic solar cells</term><term>Oxide layer</term><term>Particle size</term><term>Photovoltaic effect</term><term>Powder</term><term>Rietveld method</term><term>Solar cell</term><term>Thiophene derivative polymer</term><term>Tin addition</term><term>X ray diffraction</term><term>Zinc oxide</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Addition étain</term><term>Cellule solaire organique</term><term>Couche active</term><term>Cathode</term><term>Méthode en solution</term><term>Synthèse chimique</term><term>Basse température</term><term>Caractéristique optique</term><term>Propriété optique</term><term>Structure électronique</term><term>Propriété électronique</term><term>Diffraction RX</term><term>Méthode Rietveld</term><term>Cristallite</term><term>Dimension particule</term><term>Voltammétrie cyclique</term><term>Hétérojonction</term><term>Cellule solaire</term><term>Couche intermédiaire</term><term>Couche interfaciale</term><term>Effet photovoltaïque</term><term>Oxyde d'indium</term><term>Oxyde de zinc</term><term>Nanocristal</term><term>Couche tampon</term><term>Fullerènes</term><term>Couche oxyde</term><term>Poudre</term><term>Hétérostructure</term><term>Thiophène dérivé polymère</term><term>Ester</term><term>Acide butyrique</term><term>Composé du fullerène</term><term>Matériau dopé</term><term>8105T</term><term>8116B</term><term>7867</term><term>7322</term><term>ITO</term><term>ZnO</term><term>7321</term><term>8245R</term><term>8460J</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">In this study, we report on the improvement of ITO-free inverted polymer/fullerene solar cells by introducing a zinc oxide (ZnO) layer between the active layer and the cathode. The ZnO layers are deposited from solution, using colloidal ZnO nanocrystals with a rodlike shape, which are obtained using a wet-chemical synthesis route at low temperature. The nanocrystals are widely characterized with respect to their structural, optical, and electronic properties. In particular, simulations of powder X-ray diffraction data based on Rietveld refinement are shown to be a suitable method to characterize the average crystallite shape and particle size. Cyclic voltammetry reveals that nanocrystalline ZnO is an appropriate choice as electron-selective buffer layer in organic solar cells based on a bulk heterojunction of poly (3-hexylthiophene) (P3HT) and [6,6]-phenyl-C<sub>61</sub>-butyric acid methyl ester (PCBM). Using ITO-free inverted solar cells in substrate configuration with an opaque Cr/Al/ Cr bottom electrode, we demonstrate that introducing a cathodic interlayer of ZnO nanocrystals leads to a notable enhancement in photovoltaic performance. The magnitude of the effect is found to depend on the solvents used to process the active layer. In case of absorber blends processed from o-dichlorobenzene, we show an almost threefold increase in efficiency from 0.8 to 2.2% at an active area of 1 cm<sup>2</sup>.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1566-1199</s0></fA01><fA03 i2="1"><s0>Org. electron. : (Print)</s0></fA03><fA05><s2>13</s2></fA05><fA06><s2>11</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Improvement of ITO-free inverted polymer-based solar cells by using colloidal zinc oxide nanocrystals as electron-selective buffer layer</s1></fA08><fA11 i1="01" i2="1"><s1>WILKEN (Sebastian)</s1></fA11><fA11 i1="02" i2="1"><s1>SCHEUNEMANN (Dorothea)</s1></fA11><fA11 i1="03" i2="1"><s1>WILKENS (Verena)</s1></fA11><fA11 i1="04" i2="1"><s1>PARISI (Jürgen)</s1></fA11><fA11 i1="05" i2="1"><s1>BORCHERT (Holger)</s1></fA11><fA14 i1="01"><s1>Institute of Physics, Energy and Semiconductor Research Laboratory, Carl von Ossietzky University of Oldenburg</s1><s2>26111 Oldenburg</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></fA14><fA20><s1>2386-2394</s1></fA20><fA21><s1>2012</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>27255</s2><s5>354000509579360250</s5></fA43><fA44><s0>0000</s0><s1>© 2012 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>51 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>12-0421738</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Organic electronics : (Print)</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>In this study, we report on the improvement of ITO-free inverted polymer/fullerene solar cells by introducing a zinc oxide (ZnO) layer between the active layer and the cathode. The ZnO layers are deposited from solution, using colloidal ZnO nanocrystals with a rodlike shape, which are obtained using a wet-chemical synthesis route at low temperature. The nanocrystals are widely characterized with respect to their structural, optical, and electronic properties. In particular, simulations of powder X-ray diffraction data based on Rietveld refinement are shown to be a suitable method to characterize the average crystallite shape and particle size. Cyclic voltammetry reveals that nanocrystalline ZnO is an appropriate choice as electron-selective buffer layer in organic solar cells based on a bulk heterojunction of poly (3-hexylthiophene) (P3HT) and [6,6]-phenyl-C<sub>61</sub>-butyric acid methyl ester (PCBM). Using ITO-free inverted solar cells in substrate configuration with an opaque Cr/Al/ Cr bottom electrode, we demonstrate that introducing a cathodic interlayer of ZnO nanocrystals leads to a notable enhancement in photovoltaic performance. The magnitude of the effect is found to depend on the solvents used to process the active layer. In case of absorber blends processed from o-dichlorobenzene, we show an almost threefold increase in efficiency from 0.8 to 2.2% at an active area of 1 cm<sup>2</sup>.</s0></fC01><fC02 i1="01" i2="X"><s0>001D06C02D1</s0></fC02><fC02 i1="02" i2="3"><s0>001B80A20</s0></fC02><fC02 i1="03" i2="3"><s0>001B70H67</s0></fC02><fC02 i1="04" i2="3"><s0>001B70A15</s0></fC02><fC02 i1="05" i2="X"><s0>230</s0></fC02><fC03 i1="01" i2="X" l="FRE"><s0>Addition étain</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="ENG"><s0>Tin addition</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="SPA"><s0>Adición estaño</s0><s5>01</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Cellule solaire organique</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Organic solar cells</s0><s5>02</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Couche active</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>Active layer</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="SPA"><s0>Capa activa</s0><s5>03</s5></fC03><fC03 i1="04" i2="X" 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l="SPA"><s0>Heterounión</s0><s5>17</s5></fC03><fC03 i1="18" i2="X" l="FRE"><s0>Cellule solaire</s0><s5>18</s5></fC03><fC03 i1="18" i2="X" l="ENG"><s0>Solar cell</s0><s5>18</s5></fC03><fC03 i1="18" i2="X" l="SPA"><s0>Célula solar</s0><s5>18</s5></fC03><fC03 i1="19" i2="3" l="FRE"><s0>Couche intermédiaire</s0><s5>19</s5></fC03><fC03 i1="19" i2="3" l="ENG"><s0>Interlayers</s0><s5>19</s5></fC03><fC03 i1="20" i2="X" l="FRE"><s0>Couche interfaciale</s0><s5>20</s5></fC03><fC03 i1="20" i2="X" l="ENG"><s0>Interfacial layer</s0><s5>20</s5></fC03><fC03 i1="20" i2="X" l="SPA"><s0>Capa interfacial</s0><s5>20</s5></fC03><fC03 i1="21" i2="X" l="FRE"><s0>Effet photovoltaïque</s0><s5>21</s5></fC03><fC03 i1="21" i2="X" l="ENG"><s0>Photovoltaic effect</s0><s5>21</s5></fC03><fC03 i1="21" i2="X" l="SPA"><s0>Efecto fotovoltaico</s0><s5>21</s5></fC03><fC03 i1="22" i2="X" l="FRE"><s0>Oxyde d'indium</s0><s5>22</s5></fC03><fC03 i1="22" i2="X" l="ENG"><s0>Indium oxide</s0><s5>22</s5></fC03><fC03 i1="22" i2="X" l="SPA"><s0>Indio óxido</s0><s5>22</s5></fC03><fC03 i1="23" i2="X" l="FRE"><s0>Oxyde de zinc</s0><s5>23</s5></fC03><fC03 i1="23" i2="X" l="ENG"><s0>Zinc oxide</s0><s5>23</s5></fC03><fC03 i1="23" i2="X" l="SPA"><s0>Zinc óxido</s0><s5>23</s5></fC03><fC03 i1="24" i2="X" l="FRE"><s0>Nanocristal</s0><s5>24</s5></fC03><fC03 i1="24" i2="X" l="ENG"><s0>Nanocrystal</s0><s5>24</s5></fC03><fC03 i1="24" i2="X" l="SPA"><s0>Nanocristal</s0><s5>24</s5></fC03><fC03 i1="25" i2="X" l="FRE"><s0>Couche tampon</s0><s5>25</s5></fC03><fC03 i1="25" i2="X" l="ENG"><s0>Buffer layer</s0><s5>25</s5></fC03><fC03 i1="25" i2="X" l="SPA"><s0>Capa tampón</s0><s5>25</s5></fC03><fC03 i1="26" i2="X" l="FRE"><s0>Fullerènes</s0><s5>26</s5></fC03><fC03 i1="26" i2="X" l="ENG"><s0>Fullerenes</s0><s5>26</s5></fC03><fC03 i1="27" i2="X" l="FRE"><s0>Couche oxyde</s0><s5>27</s5></fC03><fC03 i1="27" i2="X" l="ENG"><s0>Oxide layer</s0><s5>27</s5></fC03><fC03 i1="27" i2="X" l="SPA"><s0>Capa óxido</s0><s5>27</s5></fC03><fC03 i1="28" i2="X" l="FRE"><s0>Poudre</s0><s5>28</s5></fC03><fC03 i1="28" i2="X" l="ENG"><s0>Powder</s0><s5>28</s5></fC03><fC03 i1="28" i2="X" l="SPA"><s0>Polvo</s0><s5>28</s5></fC03><fC03 i1="29" i2="3" l="FRE"><s0>Hétérostructure</s0><s5>29</s5></fC03><fC03 i1="29" i2="3" l="ENG"><s0>Heterostructures</s0><s5>29</s5></fC03><fC03 i1="30" i2="X" l="FRE"><s0>Thiophène dérivé polymère</s0><s2>NK</s2><s5>30</s5></fC03><fC03 i1="30" i2="X" l="ENG"><s0>Thiophene derivative polymer</s0><s2>NK</s2><s5>30</s5></fC03><fC03 i1="30" i2="X" l="SPA"><s0>Tiofeno derivado polímero</s0><s2>NK</s2><s5>30</s5></fC03><fC03 i1="31" i2="X" l="FRE"><s0>Ester</s0><s5>31</s5></fC03><fC03 i1="31" i2="X" l="ENG"><s0>Ester</s0><s5>31</s5></fC03><fC03 i1="31" i2="X" l="SPA"><s0>Ester</s0><s5>31</s5></fC03><fC03 i1="32" i2="X" l="FRE"><s0>Acide butyrique</s0><s2>NK</s2><s5>32</s5></fC03><fC03 i1="32" i2="X" l="ENG"><s0>Butyric acid</s0><s2>NK</s2><s5>32</s5></fC03><fC03 i1="32" i2="X" l="SPA"><s0>Butírico ácido</s0><s2>NK</s2><s5>32</s5></fC03><fC03 i1="33" i2="3" l="FRE"><s0>Composé du fullerène</s0><s5>33</s5></fC03><fC03 i1="33" i2="3" l="ENG"><s0>Fullerene compounds</s0><s5>33</s5></fC03><fC03 i1="34" i2="3" l="FRE"><s0>Matériau dopé</s0><s5>46</s5></fC03><fC03 i1="34" i2="3" l="ENG"><s0>Doped materials</s0><s5>46</s5></fC03><fC03 i1="35" i2="X" l="FRE"><s0>8105T</s0><s4>INC</s4><s5>56</s5></fC03><fC03 i1="36" i2="X" l="FRE"><s0>8116B</s0><s4>INC</s4><s5>57</s5></fC03><fC03 i1="37" i2="X" l="FRE"><s0>7867</s0><s4>INC</s4><s5>58</s5></fC03><fC03 i1="38" i2="X" l="FRE"><s0>7322</s0><s4>INC</s4><s5>59</s5></fC03><fC03 i1="39" i2="X" l="FRE"><s0>ITO</s0><s4>INC</s4><s5>82</s5></fC03><fC03 i1="40" i2="X" l="FRE"><s0>ZnO</s0><s4>INC</s4><s5>83</s5></fC03><fC03 i1="41" i2="X" l="FRE"><s0>7321</s0><s4>INC</s4><s5>84</s5></fC03><fC03 i1="42" i2="X" l="FRE"><s0>8245R</s0><s4>INC</s4><s5>85</s5></fC03><fC03 i1="43" i2="X" l="FRE"><s0>8460J</s0><s4>INC</s4><s5>86</s5></fC03><fN21><s1>331</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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