Investigation of Reverse Leakage Characteristics of InGaN/GaN Light-Emitting Diodes on Silicon
Identifieur interne : 001936 ( Main/Repository ); précédent : 001935; suivant : 001937Investigation of Reverse Leakage Characteristics of InGaN/GaN Light-Emitting Diodes on Silicon
Auteurs : RBID : Pascal:13-0049776Descripteurs français
- Pascal (Inist)
- Diode électroluminescente, Méthode MOCVD, Effet température, Dépendance température, Caractéristique courant tension, Courant fuite, Emission champ, Emission thermoionique, Effet Poole Frenkel, Charge espace, Energie activation, Endommagement, Composé ternaire, Nitrure de gallium, Nitrure d'indium, Composé binaire, Silicium, Puits quantique multiple, Fabrication microélectronique, 8107S, 8115G, InGaN, GaN.
English descriptors
- KwdEn :
- Activation energy, Binary compound, Damaging, Field emission, Gallium nitride, Indium nitride, Leakage current, Light emitting diode, MOCVD, Microelectronic fabrication, Multiple quantum well, Poole Frenkel effect, Silicon, Space charge, Temperature dependence, Temperature effect, Ternary compound, Thermionic emission, Voltage current curve.
Abstract
We investigate the reverse leakage characteristics of InGaN/GaN multiple-quantum-well light-emitting diodes (LEDs) grown on Si (111) substrate by metal-organic chemical vapor deposition. The reverse leakage characteristics of InGaN/GaN LED on silicon are measured as low as ∼10 nA at -5 V and -10 μA at -15 V. Temperature-dependent current-voltage (I-V) measurements of LED devices reveal that the reverse leakage current mechanism is mainly attributed to the field-enhanced thermionic emission, also known as Poole-Frenkel emission, of carriers from deep centers within the space charge region up to ∼ -18 V. The analysis of T-I-V curve yields the calculation of the coefficient of the Poole-Frenkel effect (1.12 x 10-4 eV . V-1/2 . cm1/2) and activation energies of carriers (∼214 meV at -5 V). With further increase of reverse bias, up to -40 V, LED devices exhibit the onset of space-charge-limited leakage current mechanism without any local breakdown.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Investigation of Reverse Leakage Characteristics of InGaN/GaN Light-Emitting Diodes on Silicon</title><author><name sortKey="Kim, Jaekyun" uniqKey="Kim J">Jaekyun Kim</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Samsung Advanced Institute of Technology, Samsung Electronics Company</s1><s2>Yongin 446-712</s2><s3>KOR</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>Corée du Sud</country><wicri:noRegion>Yongin 446-712</wicri:noRegion></affiliation></author><author><name sortKey="Kim, Jun Youn" uniqKey="Kim J">Jun-Youn Kim</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Samsung Advanced Institute of Technology, Samsung Electronics Company</s1><s2>Yongin 446-712</s2><s3>KOR</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>Corée du Sud</country><wicri:noRegion>Yongin 446-712</wicri:noRegion></affiliation></author><author><name sortKey="Tak, Youngjo" uniqKey="Tak Y">Youngjo Tak</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Samsung Advanced Institute of Technology, Samsung Electronics Company</s1><s2>Yongin 446-712</s2><s3>KOR</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>Corée du Sud</country><wicri:noRegion>Yongin 446-712</wicri:noRegion></affiliation></author><author><name sortKey="Kim, Joosung" uniqKey="Kim J">Joosung Kim</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Samsung Advanced Institute of Technology, Samsung Electronics Company</s1><s2>Yongin 446-712</s2><s3>KOR</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>Corée du Sud</country><wicri:noRegion>Yongin 446-712</wicri:noRegion></affiliation></author><author><name sortKey="Hong, Hyun Gi" uniqKey="Hong H">Hyun-Gi Hong</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Samsung Advanced Institute of Technology, Samsung Electronics Company</s1><s2>Yongin 446-712</s2><s3>KOR</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>Corée du Sud</country><wicri:noRegion>Yongin 446-712</wicri:noRegion></affiliation></author><author><name sortKey="Yang, Moonseung" uniqKey="Yang M">Moonseung Yang</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Samsung Advanced Institute of Technology, Samsung Electronics Company</s1><s2>Yongin 446-712</s2><s3>KOR</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>Corée du Sud</country><wicri:noRegion>Yongin 446-712</wicri:noRegion></affiliation></author><author><name sortKey="Chae, Suhee" uniqKey="Chae S">Suhee Chae</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Samsung Advanced Institute of Technology, Samsung Electronics Company</s1><s2>Yongin 446-712</s2><s3>KOR</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>Corée du Sud</country><wicri:noRegion>Yongin 446-712</wicri:noRegion></affiliation></author><author><name sortKey="Park, Junghoon" uniqKey="Park J">Junghoon Park</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Samsung Advanced Institute of Technology, Samsung Electronics Company</s1><s2>Yongin 446-712</s2><s3>KOR</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>Corée du Sud</country><wicri:noRegion>Yongin 446-712</wicri:noRegion></affiliation></author><author><name sortKey="Park, Youngsoo" uniqKey="Park Y">Youngsoo Park</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Samsung Advanced Institute of Technology, Samsung Electronics Company</s1><s2>Yongin 446-712</s2><s3>KOR</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>Corée du Sud</country><wicri:noRegion>Yongin 446-712</wicri:noRegion></affiliation></author><author><name sortKey="Chung, U In" uniqKey="Chung U">U-In Chung</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Samsung Advanced Institute of Technology, Samsung Electronics Company</s1><s2>Yongin 446-712</s2><s3>KOR</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>Corée du Sud</country><wicri:noRegion>Yongin 446-712</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">13-0049776</idno><date when="2012">2012</date><idno type="stanalyst">PASCAL 13-0049776 INIST</idno><idno type="RBID">Pascal:13-0049776</idno><idno type="wicri:Area/Main/Corpus">001356</idno><idno type="wicri:Area/Main/Repository">001936</idno></publicationStmt><seriesStmt><idno type="ISSN">0741-3106</idno><title level="j" type="abbreviated">IEEE electron device lett.</title><title level="j" type="main">IEEE electron device letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Activation energy</term><term>Binary compound</term><term>Damaging</term><term>Field emission</term><term>Gallium nitride</term><term>Indium nitride</term><term>Leakage current</term><term>Light emitting diode</term><term>MOCVD</term><term>Microelectronic fabrication</term><term>Multiple quantum well</term><term>Poole Frenkel effect</term><term>Silicon</term><term>Space charge</term><term>Temperature dependence</term><term>Temperature effect</term><term>Ternary compound</term><term>Thermionic emission</term><term>Voltage current curve</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Diode électroluminescente</term><term>Méthode MOCVD</term><term>Effet température</term><term>Dépendance température</term><term>Caractéristique courant tension</term><term>Courant fuite</term><term>Emission champ</term><term>Emission thermoionique</term><term>Effet Poole Frenkel</term><term>Charge espace</term><term>Energie activation</term><term>Endommagement</term><term>Composé ternaire</term><term>Nitrure de gallium</term><term>Nitrure d'indium</term><term>Composé binaire</term><term>Silicium</term><term>Puits quantique multiple</term><term>Fabrication microélectronique</term><term>8107S</term><term>8115G</term><term>InGaN</term><term>GaN</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We investigate the reverse leakage characteristics of InGaN/GaN multiple-quantum-well light-emitting diodes (LEDs) grown on Si (111) substrate by metal-organic chemical vapor deposition. The reverse leakage characteristics of InGaN/GaN LED on silicon are measured as low as ∼10 nA at -5 V and -10 μA at -15 V. Temperature-dependent current-voltage (I-V) measurements of LED devices reveal that the reverse leakage current mechanism is mainly attributed to the field-enhanced thermionic emission, also known as Poole-Frenkel emission, of carriers from deep centers within the space charge region up to ∼ -18 V. The analysis of T-I-V curve yields the calculation of the coefficient of the Poole-Frenkel effect (1.12 x 10<sup>-4</sup> eV . V<sup>-1/2 </sup>. cm<sup>1/2</sup>) and activation energies of carriers (∼214 meV at -5 V). With further increase of reverse bias, up to -40 V, LED devices exhibit the onset of space-charge-limited leakage current mechanism without any local breakdown.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0741-3106</s0></fA01><fA02 i1="01"><s0>EDLEDZ</s0></fA02><fA03 i2="1"><s0>IEEE electron device lett.</s0></fA03><fA05><s2>33</s2></fA05><fA06><s2>12</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Investigation of Reverse Leakage Characteristics of InGaN/GaN Light-Emitting Diodes on Silicon</s1></fA08><fA11 i1="01" i2="1"><s1>KIM (Jaekyun)</s1></fA11><fA11 i1="02" i2="1"><s1>KIM (Jun-Youn)</s1></fA11><fA11 i1="03" i2="1"><s1>TAK (Youngjo)</s1></fA11><fA11 i1="04" i2="1"><s1>KIM (Joosung)</s1></fA11><fA11 i1="05" i2="1"><s1>HONG (Hyun-Gi)</s1></fA11><fA11 i1="06" i2="1"><s1>YANG (Moonseung)</s1></fA11><fA11 i1="07" i2="1"><s1>CHAE (Suhee)</s1></fA11><fA11 i1="08" i2="1"><s1>PARK (Junghoon)</s1></fA11><fA11 i1="09" i2="1"><s1>PARK (Youngsoo)</s1></fA11><fA11 i1="10" i2="1"><s1>CHUNG (U-In)</s1></fA11><fA14 i1="01"><s1>Samsung Advanced Institute of Technology, Samsung Electronics Company</s1><s2>Yongin 446-712</s2><s3>KOR</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></fA14><fA20><s1>1741-1743</s1></fA20><fA21><s1>2012</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>222V</s2><s5>354000509041770230</s5></fA43><fA44><s0>0000</s0><s1>© 2013 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>14 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>13-0049776</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>IEEE electron device letters</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>We investigate the reverse leakage characteristics of InGaN/GaN multiple-quantum-well light-emitting diodes (LEDs) grown on Si (111) substrate by metal-organic chemical vapor deposition. The reverse leakage characteristics of InGaN/GaN LED on silicon are measured as low as ∼10 nA at -5 V and -10 μA at -15 V. Temperature-dependent current-voltage (I-V) measurements of LED devices reveal that the reverse leakage current mechanism is mainly attributed to the field-enhanced thermionic emission, also known as Poole-Frenkel emission, of carriers from deep centers within the space charge region up to ∼ -18 V. The analysis of T-I-V curve yields the calculation of the coefficient of the Poole-Frenkel effect (1.12 x 10<sup>-4</sup> eV . V<sup>-1/2 </sup>. cm<sup>1/2</sup>) and activation energies of carriers (∼214 meV at -5 V). With further increase of reverse bias, up to -40 V, LED devices exhibit the onset of space-charge-limited leakage current mechanism without any local breakdown.</s0></fC01><fC02 i1="01" i2="X"><s0>001D03F15</s0></fC02><fC02 i1="02" i2="X"><s0>001D03F19</s0></fC02><fC02 i1="03" i2="3"><s0>001B80A07S</s0></fC02><fC02 i1="04" i2="X"><s0>001D03F17</s0></fC02><fC03 i1="01" i2="X" l="FRE"><s0>Diode électroluminescente</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="ENG"><s0>Light emitting diode</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="SPA"><s0>Diodo electroluminescente</s0><s5>01</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Méthode MOCVD</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>MOCVD</s0><s5>02</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Effet température</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>Temperature effect</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="SPA"><s0>Efecto temperatura</s0><s5>03</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Dépendance température</s0><s5>04</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Temperature dependence</s0><s5>04</s5></fC03><fC03 i1="05" i2="X" l="FRE"><s0>Caractéristique courant tension</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="ENG"><s0>Voltage current curve</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="SPA"><s0>Característica corriente tensión</s0><s5>05</s5></fC03><fC03 i1="06" i2="X" l="FRE"><s0>Courant fuite</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="ENG"><s0>Leakage current</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="SPA"><s0>Corriente escape</s0><s5>06</s5></fC03><fC03 i1="07" i2="X" l="FRE"><s0>Emission champ</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="ENG"><s0>Field emission</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="SPA"><s0>Emisión campo</s0><s5>07</s5></fC03><fC03 i1="08" i2="X" l="FRE"><s0>Emission thermoionique</s0><s5>08</s5></fC03><fC03 i1="08" i2="X" l="ENG"><s0>Thermionic emission</s0><s5>08</s5></fC03><fC03 i1="08" i2="X" l="SPA"><s0>Emisión termoiónica</s0><s5>08</s5></fC03><fC03 i1="09" i2="X" l="FRE"><s0>Effet Poole Frenkel</s0><s5>09</s5></fC03><fC03 i1="09" i2="X" l="ENG"><s0>Poole Frenkel effect</s0><s5>09</s5></fC03><fC03 i1="09" i2="X" l="SPA"><s0>Efecto Poole Frenkel</s0><s5>09</s5></fC03><fC03 i1="10" i2="X" l="FRE"><s0>Charge espace</s0><s5>10</s5></fC03><fC03 i1="10" i2="X" l="ENG"><s0>Space charge</s0><s5>10</s5></fC03><fC03 i1="10" i2="X" l="SPA"><s0>Carga espacio</s0><s5>10</s5></fC03><fC03 i1="11" i2="X" l="FRE"><s0>Energie activation</s0><s5>11</s5></fC03><fC03 i1="11" i2="X" l="ENG"><s0>Activation energy</s0><s5>11</s5></fC03><fC03 i1="11" i2="X" l="SPA"><s0>Energía activación</s0><s5>11</s5></fC03><fC03 i1="12" i2="X" l="FRE"><s0>Endommagement</s0><s5>12</s5></fC03><fC03 i1="12" i2="X" l="ENG"><s0>Damaging</s0><s5>12</s5></fC03><fC03 i1="12" i2="X" l="SPA"><s0>Deterioración</s0><s5>12</s5></fC03><fC03 i1="13" i2="X" l="FRE"><s0>Composé ternaire</s0><s5>22</s5></fC03><fC03 i1="13" i2="X" l="ENG"><s0>Ternary compound</s0><s5>22</s5></fC03><fC03 i1="13" i2="X" l="SPA"><s0>Compuesto ternario</s0><s5>22</s5></fC03><fC03 i1="14" i2="X" l="FRE"><s0>Nitrure de gallium</s0><s5>23</s5></fC03><fC03 i1="14" i2="X" l="ENG"><s0>Gallium nitride</s0><s5>23</s5></fC03><fC03 i1="14" i2="X" l="SPA"><s0>Galio nitruro</s0><s5>23</s5></fC03><fC03 i1="15" i2="X" l="FRE"><s0>Nitrure d'indium</s0><s5>24</s5></fC03><fC03 i1="15" i2="X" l="ENG"><s0>Indium nitride</s0><s5>24</s5></fC03><fC03 i1="15" i2="X" l="SPA"><s0>Indio nitruro</s0><s5>24</s5></fC03><fC03 i1="16" i2="X" l="FRE"><s0>Composé binaire</s0><s5>25</s5></fC03><fC03 i1="16" i2="X" l="ENG"><s0>Binary compound</s0><s5>25</s5></fC03><fC03 i1="16" i2="X" l="SPA"><s0>Compuesto binario</s0><s5>25</s5></fC03><fC03 i1="17" i2="X" l="FRE"><s0>Silicium</s0><s2>NC</s2><s5>26</s5></fC03><fC03 i1="17" i2="X" l="ENG"><s0>Silicon</s0><s2>NC</s2><s5>26</s5></fC03><fC03 i1="17" i2="X" l="SPA"><s0>Silicio</s0><s2>NC</s2><s5>26</s5></fC03><fC03 i1="18" i2="X" l="FRE"><s0>Puits quantique multiple</s0><s5>27</s5></fC03><fC03 i1="18" i2="X" l="ENG"><s0>Multiple quantum well</s0><s5>27</s5></fC03><fC03 i1="18" i2="X" l="SPA"><s0>Pozo cuántico múltiple</s0><s5>27</s5></fC03><fC03 i1="19" i2="X" l="FRE"><s0>Fabrication microélectronique</s0><s5>46</s5></fC03><fC03 i1="19" i2="X" l="ENG"><s0>Microelectronic fabrication</s0><s5>46</s5></fC03><fC03 i1="19" i2="X" l="SPA"><s0>Fabricación microeléctrica</s0><s5>46</s5></fC03><fC03 i1="20" i2="X" l="FRE"><s0>8107S</s0><s4>INC</s4><s5>56</s5></fC03><fC03 i1="21" i2="X" l="FRE"><s0>8115G</s0><s4>INC</s4><s5>57</s5></fC03><fC03 i1="22" i2="X" l="FRE"><s0>InGaN</s0><s4>INC</s4><s5>82</s5></fC03><fC03 i1="23" i2="X" l="FRE"><s0>GaN</s0><s4>INC</s4><s5>83</s5></fC03><fC07 i1="01" i2="X" l="FRE"><s0>Composé III-V</s0><s5>13</s5></fC07><fC07 i1="01" i2="X" l="ENG"><s0>III-V compound</s0><s5>13</s5></fC07><fC07 i1="01" i2="X" l="SPA"><s0>Compuesto III-V</s0><s5>13</s5></fC07><fC07 i1="02" i2="X" l="FRE"><s0>Dispositif optoélectronique</s0><s5>14</s5></fC07><fC07 i1="02" i2="X" l="ENG"><s0>Optoelectronic device</s0><s5>14</s5></fC07><fC07 i1="02" i2="X" l="SPA"><s0>Dispositivo optoelectrónico</s0><s5>14</s5></fC07><fN21><s1>028</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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