Polarization Effect on the Photovoltaic Characteristics of Al0.14Ga0.86N/In0.21Ga0.79N Superlattice Solar Cells
Identifieur interne : 001675 ( Main/Repository ); précédent : 001674; suivant : 001676Polarization Effect on the Photovoltaic Characteristics of Al0.14Ga0.86N/In0.21Ga0.79N Superlattice Solar Cells
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Abstract
The influence of spontaneous and strain-induced piezoelectric polarizations on the photovoltaic characteristics of an Al0.14Ga0.86N/In0.21Ga0.79N superlattice (SL) solar cell is numerically investigated. The simulation results show that, compared with the conventional p-i-n structure, the Al0.14Ga0.86N/In0.21Ga0.79N SL solar cell has better photovoltaic characteristics and is less sensitive to the effect of internal polarization. Therefore, the use of an SL structure in the III-nitride solar cells is advantageous if both the polarization effect and the crystal quality are of major concern.
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Ga<sub>0.86</sub>
N/In<sub>0.21</sub>
Ga<sub>0.79</sub>
N Superlattice Solar Cells</title>
<author><name sortKey="Kuo, Yen Kuang" uniqKey="Kuo Y">Yen-Kuang Kuo</name>
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<author><name sortKey="Lin, Han Wei" uniqKey="Lin H">Han-Wei Lin</name>
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<author><name sortKey="Chen, Yu Han" uniqKey="Chen Y">Yu-Han Chen</name>
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<author><name sortKey="Chang, Yi An" uniqKey="Chang Y">Yi-An Chang</name>
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<front><div type="abstract" xml:lang="en">The influence of spontaneous and strain-induced piezoelectric polarizations on the photovoltaic characteristics of an Al<sub>0.14</sub>
Ga<sub>0.86</sub>
N/In<sub>0.21</sub>
Ga<sub>0.79</sub>
N superlattice (SL) solar cell is numerically investigated. The simulation results show that, compared with the conventional p-i-n structure, the Al<sub>0.14</sub>
Ga<sub>0.86</sub>
N/In<sub>0.21</sub>
Ga<sub>0.79</sub>
N SL solar cell has better photovoltaic characteristics and is less sensitive to the effect of internal polarization. Therefore, the use of an SL structure in the III-nitride solar cells is advantageous if both the polarization effect and the crystal quality are of major concern.</div>
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Ga<sub>0.86</sub>
N/In<sub>0.21</sub>
Ga<sub>0.79</sub>
N superlattice (SL) solar cell is numerically investigated. The simulation results show that, compared with the conventional p-i-n structure, the Al<sub>0.14</sub>
Ga<sub>0.86</sub>
N/In<sub>0.21</sub>
Ga<sub>0.79</sub>
N SL solar cell has better photovoltaic characteristics and is less sensitive to the effect of internal polarization. Therefore, the use of an SL structure in the III-nitride solar cells is advantageous if both the polarization effect and the crystal quality are of major concern.</s0>
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