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Polarization Effect on the Photovoltaic Characteristics of Al0.14Ga0.86N/In0.21Ga0.79N Superlattice Solar Cells

Identifieur interne : 001675 ( Main/Repository ); précédent : 001674; suivant : 001676

Polarization Effect on the Photovoltaic Characteristics of Al0.14Ga0.86N/In0.21Ga0.79N Superlattice Solar Cells

Auteurs : RBID : Pascal:12-0341757

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Abstract

The influence of spontaneous and strain-induced piezoelectric polarizations on the photovoltaic characteristics of an Al0.14Ga0.86N/In0.21Ga0.79N superlattice (SL) solar cell is numerically investigated. The simulation results show that, compared with the conventional p-i-n structure, the Al0.14Ga0.86N/In0.21Ga0.79N SL solar cell has better photovoltaic characteristics and is less sensitive to the effect of internal polarization. Therefore, the use of an SL structure in the III-nitride solar cells is advantageous if both the polarization effect and the crystal quality are of major concern.

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Pascal:12-0341757

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<title xml:lang="en" level="a">Polarization Effect on the Photovoltaic Characteristics of Al
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<div type="abstract" xml:lang="en">The influence of spontaneous and strain-induced piezoelectric polarizations on the photovoltaic characteristics of an Al
<sub>0.14</sub>
Ga
<sub>0.86</sub>
N/In
<sub>0.21</sub>
Ga
<sub>0.79</sub>
N superlattice (SL) solar cell is numerically investigated. The simulation results show that, compared with the conventional p-i-n structure, the Al
<sub>0.14</sub>
Ga
<sub>0.86</sub>
N/In
<sub>0.21</sub>
Ga
<sub>0.79</sub>
N SL solar cell has better photovoltaic characteristics and is less sensitive to the effect of internal polarization. Therefore, the use of an SL structure in the III-nitride solar cells is advantageous if both the polarization effect and the crystal quality are of major concern.</div>
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<sub>0.86</sub>
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<sub>0.86</sub>
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