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Stoichiometry and surface reconstruction of epitaxial CuInSe2 ( 112 ) films

Identifieur interne : 001515 ( Main/Repository ); précédent : 001514; suivant : 001516

Stoichiometry and surface reconstruction of epitaxial CuInSe2 ( 112 ) films

Auteurs : RBID : Pascal:12-0274843

Descripteurs français

Pascal (Inist)
- Reconstruction surface, Structure surface, Couche épitaxique, Chalcopyrite, Couche mince, Cellule solaire, Composé ternaire, Séléniure de cuivre, Séléniure d'indium, Semiconducteur, Cu In Se, CuInSe2, Composé minéral, Composé de métal de transition.
Wicri :
- concept : Composé minéral.

English descriptors

KwdEn :
- Chalcopyrite, Copper selenides, Epitaxial layers, Indium selenides, Inorganic compounds, Semiconductor materials, Solar cells, Surface reconstruction, Surface structure, Ternary compounds, Thin films, Transition element compounds.

Abstract

CuInSe₂(112) films were grown on GaAs(111)A substrates by molecular beam epitaxy. The resulting surface stoichiometry was deduced by consideration of results from various surface analytic techniques. The obtainable Cu/In stoichiometry range in XPS was 0.4-1.2, where 1.2 marks the onset of Cu₂-xSe phase segregation at the surface and 0.4 corresponds to the copper-depleted surface with ordered defect compound (ODC) composition. For the stoichiometric CuInSe₂(112) surface, a c(4x2) reconstruction of the zinc blende surface periodicity is observed in the LEED pattern, with three rotational domains present on the flat GaAs(111) substrate. With the use of stepped (111) substrates, domain formation could be suppressed. By comparison of the LEED data and concentration depth profiles from angle-resolved XPS, two types of surface reconstructions could be distinguished. According to surface energy calculations in the literature, these correspond to surfaces stabilized by either Cu_In or 2V_Cu defects. The surface of copper-poor CuIn₃Se₅ shows no reconstruction of the zinc blende order.

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Pascal:12-0274843

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Stoichiometry and surface reconstruction of epitaxial CuInSe<sub>2</sub>
 ( 112 ) films</title>
<author><name sortKey="Hofmann, A" uniqKey="Hofmann A">A. Hofmann</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Helmholtz-Zentrum Berlin, Institute for Silicon Photovoltaics, Albert-Einstein-Str. 15</s1>
<s2>12489 Berlin</s2>
<s3>DEU</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
</inist:fA14>
<country>Allemagne</country>
<placeName><region type="land" nuts="3">Berlin</region>
<settlement type="city">Berlin</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Pettenkofer, C" uniqKey="Pettenkofer C">C. Pettenkofer</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Helmholtz-Zentrum Berlin, Institute for Silicon Photovoltaics, Albert-Einstein-Str. 15</s1>
<s2>12489 Berlin</s2>
<s3>DEU</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
</inist:fA14>
<country>Allemagne</country>
<placeName><region type="land" nuts="3">Berlin</region>
<settlement type="city">Berlin</settlement>
</placeName>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">12-0274843</idno>
<date when="2012">2012</date>
<idno type="stanalyst">PASCAL 12-0274843 INIST</idno>
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<idno type="wicri:Area/Main/Corpus">001B84</idno>
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<seriesStmt><idno type="ISSN">0039-6028</idno>
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<title level="j" type="main">Surface science</title>
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</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Chalcopyrite</term>
<term>Copper selenides</term>
<term>Epitaxial layers</term>
<term>Indium selenides</term>
<term>Inorganic compounds</term>
<term>Semiconductor materials</term>
<term>Solar cells</term>
<term>Surface reconstruction</term>
<term>Surface structure</term>
<term>Ternary compounds</term>
<term>Thin films</term>
<term>Transition element compounds</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Reconstruction surface</term>
<term>Structure surface</term>
<term>Couche épitaxique</term>
<term>Chalcopyrite</term>
<term>Couche mince</term>
<term>Cellule solaire</term>
<term>Composé ternaire</term>
<term>Séléniure de cuivre</term>
<term>Séléniure d'indium</term>
<term>Semiconducteur</term>
<term>Cu In Se</term>
<term>CuInSe2</term>
<term>Composé minéral</term>
<term>Composé de métal de transition</term>
</keywords>
<keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Composé minéral</term>
</keywords>
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<front><div type="abstract" xml:lang="en">CuInSe<sub>2</sub>
(112) films were grown on GaAs(111)A substrates by molecular beam epitaxy. The resulting surface stoichiometry was deduced by consideration of results from various surface analytic techniques. The obtainable Cu/In stoichiometry range in XPS was 0.4-1.2, where 1.2 marks the onset of Cu<sub>2</sub>
-xSe phase segregation at the surface and 0.4 corresponds to the copper-depleted surface with ordered defect compound (ODC) composition. For the stoichiometric CuInSe<sub>2</sub>
(112) surface, a c(4x2) reconstruction of the zinc blende surface periodicity is observed in the LEED pattern, with three rotational domains present on the flat GaAs(111) substrate. With the use of stepped (111) substrates, domain formation could be suppressed. By comparison of the LEED data and concentration depth profiles from angle-resolved XPS, two types of surface reconstructions could be distinguished. According to surface energy calculations in the literature, these correspond to surfaces stabilized by either Cu<sub>In</sub>
 or 2V<sub>Cu</sub>
 defects. The surface of copper-poor CuIn<sub>3</sub>
Se<sub>5</sub>
 shows no reconstruction of the zinc blende order.</div>
</front>
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<fA11 i1="02" i2="1"><s1>PETTENKOFER (C.)</s1>
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<fA14 i1="01"><s1>Helmholtz-Zentrum Berlin, Institute for Silicon Photovoltaics, Albert-Einstein-Str. 15</s1>
<s2>12489 Berlin</s2>
<s3>DEU</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
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<fC01 i1="01" l="ENG"><s0>CuInSe<sub>2</sub>
(112) films were grown on GaAs(111)A substrates by molecular beam epitaxy. The resulting surface stoichiometry was deduced by consideration of results from various surface analytic techniques. The obtainable Cu/In stoichiometry range in XPS was 0.4-1.2, where 1.2 marks the onset of Cu<sub>2</sub>
-xSe phase segregation at the surface and 0.4 corresponds to the copper-depleted surface with ordered defect compound (ODC) composition. For the stoichiometric CuInSe<sub>2</sub>
(112) surface, a c(4x2) reconstruction of the zinc blende surface periodicity is observed in the LEED pattern, with three rotational domains present on the flat GaAs(111) substrate. With the use of stepped (111) substrates, domain formation could be suppressed. By comparison of the LEED data and concentration depth profiles from angle-resolved XPS, two types of surface reconstructions could be distinguished. According to surface energy calculations in the literature, these correspond to surfaces stabilized by either Cu<sub>In</sub>
 or 2V<sub>Cu</sub>
 defects. The surface of copper-poor CuIn<sub>3</sub>
Se<sub>5</sub>
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<s5>02</s5>
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<s5>04</s5>
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<s5>06</s5>
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<s5>06</s5>
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<fC03 i1="08" i2="3" l="FRE"><s0>Séléniure de cuivre</s0>
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<fC03 i1="09" i2="3" l="ENG"><s0>Indium selenides</s0>
<s2>NK</s2>
<s5>17</s5>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>Semiconducteur</s0>
<s5>18</s5>
</fC03>
<fC03 i1="10" i2="3" l="ENG"><s0>Semiconductor materials</s0>
<s5>18</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Cu In Se</s0>
<s4>INC</s4>
<s5>32</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>CuInSe2</s0>
<s4>INC</s4>
<s5>33</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>Composé minéral</s0>
<s5>62</s5>
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<s5>62</s5>
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<fC03 i1="14" i2="3" l="FRE"><s0>Composé de métal de transition</s0>
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<fC03 i1="14" i2="3" l="ENG"><s0>Transition element compounds</s0>
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<fN21><s1>205</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
</fN44>
<fN82><s1>OTO</s1>
</fN82>
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Stoichiometry and surface reconstruction of epitaxial CuInSe2 ( 112 ) films

Stoichiometry and surface reconstruction of epitaxial CuInSe2 ( 112 ) films

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri