Cathodic multilayer transparent electrodes for ITO-free inverted organic solar cells
Identifieur interne : 001089 ( Main/Repository ); précédent : 001088; suivant : 001090Cathodic multilayer transparent electrodes for ITO-free inverted organic solar cells
Auteurs : RBID : Pascal:13-0187836Descripteurs français
- Pascal (Inist)
- Addition étain, Cellule solaire organique, Travail sortie, Cathode, Tension circuit ouvert, Cellule solaire, Hétérojonction, Etude théorique, Etude expérimentale, Courant photoélectrique, Photoconductivité, Equilibrage, Cale espacement, Cavité, Epaisseur, Optimisation, Conversion énergie, Taux conversion, Multicouche, Oxyde d'indium, Sulfure de zinc, Oxyde de titane, Hétérostructure, Carbazole, Fullerènes, Acide butyrique, Ester, Oxyde de tungstène, Anode, Matériau dopé, 7330, 8460J, 8105T, ITO, ZnS, C70, WO3, TiO2.
English descriptors
- KwdEn :
- Anode, Balancing, Butyric acid, Carbazole, Cathode, Cavity, Conversion rate, Doped materials, Energy conversion, Ester, Experimental study, Fullerenes, Heterojunction, Heterostructures, Indium oxide, Multiple layer, Open circuit voltage, Optimization, Organic solar cells, Photoconductivity, Photoelectric current, Solar cell, Spacer, Theoretical study, Thickness, Tin addition, Titanium oxide, Tungsten oxide, Work function, Zinc sulfide.
Abstract
We demonstrate cathodic multilayer transparent electrodes based on a ZnS/Ag/TiOx (ZAT) structure for ITO-free inverted organic solar cells. A quality solution-based TiOx layer is adopted as an inner dielectric layer to modify the effective work function of Ag, ensuring the ZAT electrode works as a cathode. The effect of the TiOx layer is seen on the open-circuit voltage of a solar cell incorporating this layer, increasing to 900 mV from 600 mV in the case of a cell with a bare Ag layer for a bulk-heterojunction of poly[N-9"-hepta-decanyl-2,7-carbazole-alt-5,5-(4',7'-di-2-thienyl-2',1',3'-benzothiadiazole)] (PCDTBT) and [6,6]-phenyl C70-butyric acid methyl ester (PCBM70). The results of a joint theoretical and experimental study indicate that the photocurrent of a ZAT-based solar cell can be significantly enhanced by carefully balancing the optical-spacer and cavity-resonance effects, both of which are modulated by the thickness of the WO3 layer used as a hole-collection layer at the top anode side. ZAT-based inverted solar cells with an optimized structure exhibit a power conversion efficiency as high as 5.1%, which is comparable to that of the ITO-based equivalent.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Cathodic multilayer transparent electrodes for ITO-free inverted organic solar cells</title><author><name sortKey="Han, Donggeon" uniqKey="Han D">Donggeon Han</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Electrical Engineering, KAIST, 291 Daehak-ro</s1><s2>Yuseong-gu, Daejeon 305-701</s2><s3>KOR</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Corée du Sud</country><wicri:noRegion>Yuseong-gu, Daejeon 305-701</wicri:noRegion></affiliation></author><author><name sortKey="Lee, Soohyun" uniqKey="Lee S">Soohyun Lee</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Electrical Engineering, KAIST, 291 Daehak-ro</s1><s2>Yuseong-gu, Daejeon 305-701</s2><s3>KOR</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Corée du Sud</country><wicri:noRegion>Yuseong-gu, Daejeon 305-701</wicri:noRegion></affiliation></author><author><name sortKey="Kim, Hoyeon" uniqKey="Kim H">Hoyeon Kim</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Electrical Engineering, KAIST, 291 Daehak-ro</s1><s2>Yuseong-gu, Daejeon 305-701</s2><s3>KOR</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Corée du Sud</country><wicri:noRegion>Yuseong-gu, Daejeon 305-701</wicri:noRegion></affiliation></author><author><name sortKey="Jeong, Seonju" uniqKey="Jeong S">Seonju Jeong</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Graduate School of EEWS, KAIST, 291Daehak-ro</s1><s2>Yuseong-gu, Daejeon 305-701</s2><s3>KOR</s3><sZ>4 aut.</sZ></inist:fA14><country>Corée du Sud</country><wicri:noRegion>Yuseong-gu, Daejeon 305-701</wicri:noRegion></affiliation></author><author><name sortKey="Yoo, Seunghyup" uniqKey="Yoo S">Seunghyup Yoo</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Electrical Engineering, KAIST, 291 Daehak-ro</s1><s2>Yuseong-gu, Daejeon 305-701</s2><s3>KOR</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Corée du Sud</country><wicri:noRegion>Yuseong-gu, Daejeon 305-701</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">13-0187836</idno><date when="2013">2013</date><idno type="stanalyst">PASCAL 13-0187836 INIST</idno><idno type="RBID">Pascal:13-0187836</idno><idno type="wicri:Area/Main/Corpus">000D63</idno><idno type="wicri:Area/Main/Repository">001089</idno></publicationStmt><seriesStmt><idno type="ISSN">1566-1199</idno><title level="j" type="abbreviated">Org. electron. : (Print)</title><title level="j" type="main">Organic electronics : (Print)</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Anode</term><term>Balancing</term><term>Butyric acid</term><term>Carbazole</term><term>Cathode</term><term>Cavity</term><term>Conversion rate</term><term>Doped materials</term><term>Energy conversion</term><term>Ester</term><term>Experimental study</term><term>Fullerenes</term><term>Heterojunction</term><term>Heterostructures</term><term>Indium oxide</term><term>Multiple layer</term><term>Open circuit voltage</term><term>Optimization</term><term>Organic solar cells</term><term>Photoconductivity</term><term>Photoelectric current</term><term>Solar cell</term><term>Spacer</term><term>Theoretical study</term><term>Thickness</term><term>Tin addition</term><term>Titanium oxide</term><term>Tungsten oxide</term><term>Work function</term><term>Zinc sulfide</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Addition étain</term><term>Cellule solaire organique</term><term>Travail sortie</term><term>Cathode</term><term>Tension circuit ouvert</term><term>Cellule solaire</term><term>Hétérojonction</term><term>Etude théorique</term><term>Etude expérimentale</term><term>Courant photoélectrique</term><term>Photoconductivité</term><term>Equilibrage</term><term>Cale espacement</term><term>Cavité</term><term>Epaisseur</term><term>Optimisation</term><term>Conversion énergie</term><term>Taux conversion</term><term>Multicouche</term><term>Oxyde d'indium</term><term>Sulfure de zinc</term><term>Oxyde de titane</term><term>Hétérostructure</term><term>Carbazole</term><term>Fullerènes</term><term>Acide butyrique</term><term>Ester</term><term>Oxyde de tungstène</term><term>Anode</term><term>Matériau dopé</term><term>7330</term><term>8460J</term><term>8105T</term><term>ITO</term><term>ZnS</term><term>C70</term><term>WO3</term><term>TiO2</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We demonstrate cathodic multilayer transparent electrodes based on a ZnS/Ag/TiO<sub>x</sub> (ZAT) structure for ITO-free inverted organic solar cells. A quality solution-based TiO<sub>x</sub> layer is adopted as an inner dielectric layer to modify the effective work function of Ag, ensuring the ZAT electrode works as a cathode. The effect of the TiO<sub>x</sub> layer is seen on the open-circuit voltage of a solar cell incorporating this layer, increasing to 900 mV from 600 mV in the case of a cell with a bare Ag layer for a bulk-heterojunction of poly[N-9"-hepta-decanyl-2,7-carbazole-alt-5,5-(4',7'-di-2-thienyl-2',1',3'-benzothiadiazole)] (PCDTBT) and [6,6]-phenyl C<sub>70</sub>-butyric acid methyl ester (PCBM70). The results of a joint theoretical and experimental study indicate that the photocurrent of a ZAT-based solar cell can be significantly enhanced by carefully balancing the optical-spacer and cavity-resonance effects, both of which are modulated by the thickness of the WO<sub>3</sub> layer used as a hole-collection layer at the top anode side. ZAT-based inverted solar cells with an optimized structure exhibit a power conversion efficiency as high as 5.1%, which is comparable to that of the ITO-based equivalent.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1566-1199</s0></fA01><fA03 i2="1"><s0>Org. electron. : (Print)</s0></fA03><fA05><s2>14</s2></fA05><fA06><s2>6</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Cathodic multilayer transparent electrodes for ITO-free inverted organic solar cells</s1></fA08><fA11 i1="01" i2="1"><s1>HAN (Donggeon)</s1></fA11><fA11 i1="02" i2="1"><s1>LEE (Soohyun)</s1></fA11><fA11 i1="03" i2="1"><s1>KIM (Hoyeon)</s1></fA11><fA11 i1="04" i2="1"><s1>JEONG (Seonju)</s1></fA11><fA11 i1="05" i2="1"><s1>YOO (Seunghyup)</s1></fA11><fA14 i1="01"><s1>Department of Electrical Engineering, KAIST, 291 Daehak-ro</s1><s2>Yuseong-gu, Daejeon 305-701</s2><s3>KOR</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>5 aut.</sZ></fA14><fA14 i1="02"><s1>Graduate School of EEWS, KAIST, 291Daehak-ro</s1><s2>Yuseong-gu, Daejeon 305-701</s2><s3>KOR</s3><sZ>4 aut.</sZ></fA14><fA20><s1>1477-1482</s1></fA20><fA21><s1>2013</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>27255</s2><s5>354000504152080070</s5></fA43><fA44><s0>0000</s0><s1>© 2013 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>27 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>13-0187836</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Organic electronics : (Print)</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>We demonstrate cathodic multilayer transparent electrodes based on a ZnS/Ag/TiO<sub>x</sub> (ZAT) structure for ITO-free inverted organic solar cells. A quality solution-based TiO<sub>x</sub> layer is adopted as an inner dielectric layer to modify the effective work function of Ag, ensuring the ZAT electrode works as a cathode. The effect of the TiO<sub>x</sub> layer is seen on the open-circuit voltage of a solar cell incorporating this layer, increasing to 900 mV from 600 mV in the case of a cell with a bare Ag layer for a bulk-heterojunction of poly[N-9"-hepta-decanyl-2,7-carbazole-alt-5,5-(4',7'-di-2-thienyl-2',1',3'-benzothiadiazole)] (PCDTBT) and [6,6]-phenyl C<sub>70</sub>-butyric acid methyl ester (PCBM70). The results of a joint theoretical and experimental study indicate that the photocurrent of a ZAT-based solar cell can be significantly enhanced by carefully balancing the optical-spacer and cavity-resonance effects, both of which are modulated by the thickness of the WO<sub>3</sub> layer used as a hole-collection layer at the top anode side. ZAT-based inverted solar cells with an optimized structure exhibit a power conversion efficiency as high as 5.1%, which is comparable to that of the ITO-based equivalent.</s0></fC01><fC02 i1="01" i2="X"><s0>001D06C02D1</s0></fC02><fC02 i1="02" i2="3"><s0>001B70C30</s0></fC02><fC02 i1="03" i2="X"><s0>001D03F15</s0></fC02><fC02 i1="04" i2="X"><s0>001D03F02</s0></fC02><fC02 i1="05" i2="X"><s0>230</s0></fC02><fC03 i1="01" i2="X" l="FRE"><s0>Addition étain</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="ENG"><s0>Tin addition</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="SPA"><s0>Adición estaño</s0><s5>01</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Cellule solaire organique</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Organic solar cells</s0><s5>02</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Travail sortie</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>Work function</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="SPA"><s0>Función de trabajo</s0><s5>03</s5></fC03><fC03 i1="04" 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l="SPA"><s0>Calce espaciamiento</s0><s5>13</s5></fC03><fC03 i1="14" i2="X" l="FRE"><s0>Cavité</s0><s5>14</s5></fC03><fC03 i1="14" i2="X" l="ENG"><s0>Cavity</s0><s5>14</s5></fC03><fC03 i1="14" i2="X" l="SPA"><s0>Cavidad</s0><s5>14</s5></fC03><fC03 i1="15" i2="X" l="FRE"><s0>Epaisseur</s0><s5>15</s5></fC03><fC03 i1="15" i2="X" l="ENG"><s0>Thickness</s0><s5>15</s5></fC03><fC03 i1="15" i2="X" l="SPA"><s0>Espesor</s0><s5>15</s5></fC03><fC03 i1="16" i2="X" l="FRE"><s0>Optimisation</s0><s5>16</s5></fC03><fC03 i1="16" i2="X" l="ENG"><s0>Optimization</s0><s5>16</s5></fC03><fC03 i1="16" i2="X" l="SPA"><s0>Optimización</s0><s5>16</s5></fC03><fC03 i1="17" i2="X" l="FRE"><s0>Conversion énergie</s0><s5>17</s5></fC03><fC03 i1="17" i2="X" l="ENG"><s0>Energy conversion</s0><s5>17</s5></fC03><fC03 i1="17" i2="X" l="SPA"><s0>Conversión energética</s0><s5>17</s5></fC03><fC03 i1="18" i2="X" l="FRE"><s0>Taux conversion</s0><s5>18</s5></fC03><fC03 i1="18" i2="X" l="ENG"><s0>Conversion rate</s0><s5>18</s5></fC03><fC03 i1="18" i2="X" l="SPA"><s0>Factor conversión</s0><s5>18</s5></fC03><fC03 i1="19" i2="X" l="FRE"><s0>Multicouche</s0><s5>22</s5></fC03><fC03 i1="19" i2="X" l="ENG"><s0>Multiple layer</s0><s5>22</s5></fC03><fC03 i1="19" i2="X" l="SPA"><s0>Capa múltiple</s0><s5>22</s5></fC03><fC03 i1="20" i2="X" l="FRE"><s0>Oxyde d'indium</s0><s5>23</s5></fC03><fC03 i1="20" i2="X" l="ENG"><s0>Indium oxide</s0><s5>23</s5></fC03><fC03 i1="20" i2="X" l="SPA"><s0>Indio óxido</s0><s5>23</s5></fC03><fC03 i1="21" i2="X" l="FRE"><s0>Sulfure de zinc</s0><s5>24</s5></fC03><fC03 i1="21" i2="X" l="ENG"><s0>Zinc sulfide</s0><s5>24</s5></fC03><fC03 i1="21" i2="X" l="SPA"><s0>Zinc sulfuro</s0><s5>24</s5></fC03><fC03 i1="22" i2="X" l="FRE"><s0>Oxyde de titane</s0><s5>25</s5></fC03><fC03 i1="22" i2="X" l="ENG"><s0>Titanium oxide</s0><s5>25</s5></fC03><fC03 i1="22" i2="X" l="SPA"><s0>Titanio óxido</s0><s5>25</s5></fC03><fC03 i1="23" i2="3" l="FRE"><s0>Hétérostructure</s0><s5>26</s5></fC03><fC03 i1="23" i2="3" l="ENG"><s0>Heterostructures</s0><s5>26</s5></fC03><fC03 i1="24" i2="X" l="FRE"><s0>Carbazole</s0><s5>27</s5></fC03><fC03 i1="24" i2="X" l="ENG"><s0>Carbazole</s0><s5>27</s5></fC03><fC03 i1="24" i2="X" l="SPA"><s0>Carbazol</s0><s5>27</s5></fC03><fC03 i1="25" i2="X" l="FRE"><s0>Fullerènes</s0><s5>28</s5></fC03><fC03 i1="25" i2="X" l="ENG"><s0>Fullerenes</s0><s5>28</s5></fC03><fC03 i1="26" i2="X" l="FRE"><s0>Acide butyrique</s0><s2>NK</s2><s5>29</s5></fC03><fC03 i1="26" i2="X" l="ENG"><s0>Butyric acid</s0><s2>NK</s2><s5>29</s5></fC03><fC03 i1="26" i2="X" l="SPA"><s0>Butírico ácido</s0><s2>NK</s2><s5>29</s5></fC03><fC03 i1="27" i2="X" l="FRE"><s0>Ester</s0><s5>30</s5></fC03><fC03 i1="27" i2="X" l="ENG"><s0>Ester</s0><s5>30</s5></fC03><fC03 i1="27" i2="X" l="SPA"><s0>Ester</s0><s5>30</s5></fC03><fC03 i1="28" i2="X" l="FRE"><s0>Oxyde de tungstène</s0><s5>31</s5></fC03><fC03 i1="28" i2="X" l="ENG"><s0>Tungsten oxide</s0><s5>31</s5></fC03><fC03 i1="28" i2="X" l="SPA"><s0>Wolframio óxido</s0><s5>31</s5></fC03><fC03 i1="29" i2="X" l="FRE"><s0>Anode</s0><s5>32</s5></fC03><fC03 i1="29" i2="X" l="ENG"><s0>Anode</s0><s5>32</s5></fC03><fC03 i1="29" i2="X" l="SPA"><s0>Anodo</s0><s5>32</s5></fC03><fC03 i1="30" i2="3" l="FRE"><s0>Matériau dopé</s0><s5>46</s5></fC03><fC03 i1="30" i2="3" l="ENG"><s0>Doped materials</s0><s5>46</s5></fC03><fC03 i1="31" i2="X" l="FRE"><s0>7330</s0><s4>INC</s4><s5>56</s5></fC03><fC03 i1="32" i2="X" l="FRE"><s0>8460J</s0><s4>INC</s4><s5>57</s5></fC03><fC03 i1="33" i2="X" l="FRE"><s0>8105T</s0><s4>INC</s4><s5>58</s5></fC03><fC03 i1="34" i2="X" l="FRE"><s0>ITO</s0><s4>INC</s4><s5>82</s5></fC03><fC03 i1="35" i2="X" l="FRE"><s0>ZnS</s0><s4>INC</s4><s5>83</s5></fC03><fC03 i1="36" i2="X" l="FRE"><s0>C70</s0><s4>INC</s4><s5>84</s5></fC03><fC03 i1="37" i2="X" l="FRE"><s0>WO3</s0><s4>INC</s4><s5>85</s5></fC03><fC03 i1="38" i2="X" l="FRE"><s0>TiO2</s0><s4>INC</s4><s5>86</s5></fC03><fC07 i1="01" i2="X" l="FRE"><s0>Composé II-VI</s0><s5>19</s5></fC07><fC07 i1="01" i2="X" l="ENG"><s0>II-VI compound</s0><s5>19</s5></fC07><fC07 i1="01" i2="X" l="SPA"><s0>Compuesto II-VI</s0><s5>19</s5></fC07><fC07 i1="02" i2="X" l="FRE"><s0>Dispositif optoélectronique</s0><s5>20</s5></fC07><fC07 i1="02" i2="X" l="ENG"><s0>Optoelectronic device</s0><s5>20</s5></fC07><fC07 i1="02" i2="X" l="SPA"><s0>Dispositivo optoelectrónico</s0><s5>20</s5></fC07><fN21><s1>168</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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