Electrical and Photoelectrochemical-Properties of W03/Si Tandem Photoelectrodes
Identifieur interne : 000E02 ( Main/Repository ); précédent : 000E01; suivant : 000E03Electrical and Photoelectrochemical-Properties of W03/Si Tandem Photoelectrodes
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Abstract
Tungsten trioxide (WO3) has been investigated as a photoanode for water oxidation reactions in acidic aqueous conditions. Though WO3 is not capable of performing unassisted solar-driven water splitting, WO3 can in principle be coupled with a low band gap semiconductor, such as Si, to produce a stand-alone, tandem photocathode/photoanode p-Si/n-WO3 system for solar fuels production. Junctions between Si and WO3, with and without intervening ohmic contacts, were therefore prepared and investigated in detail. Thin films of n-WO3 that were prepared directly on p-Si and n-Si substrates exhibited an onset of photocurrent at a potential consistent with expectations based on the band-edge alignment of these two materials predicted by Andersen theory. However, n-WO3 films deposited on Si substrates exhibited much lower anodic photocurrent densities (∼0.02 mA cm-2 at 1.0 V vs SCE) than identically prepared n-WO3 films that were deposited on fluorine-doped tin oxide (FTO) substrates (0.45 mA cm-2 at 1.0 V vs SCE). Deposition of n-WO3 onto a thin layer of tin-doped indium oxide (ITO) that had been deposited on a Si substrate yielded anodic photocurrent densities that were comparable to those observed for n-WO3 films that had been deposited onto FTO-coated glass. An increased photovoltage was observed when an n-Si/ITO Schottky junction was formed in series with the n-WO3 film, relative to when the WO3 was deposited directly onto the Si. Hence, inclusion of the ITO layer allowed for tandem photoelectrochemical devices to be prepared using n-WO3 and n-Si as the light absorbers.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Electrical and Photoelectrochemical<sup>-</sup>Properties of W0<sub>3</sub>/Si Tandem Photoelectrodes</title><author><name sortKey="Coridan, Robert H" uniqKey="Coridan R">Robert H. Coridan</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Kavli Nanoscience Institute, Beckman Institute and Joint Center for Artificial Photosynthesis, Division of Chemistry and Chemical Engineering, 210 Noyes Laboratory, 127-72, California Institute of Technology</s1><s2>Pasadena, California 91125</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Pasadena, California 91125</wicri:noRegion></affiliation></author><author><name sortKey="Shaner, Matthew" uniqKey="Shaner M">Matthew Shaner</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Kavli Nanoscience Institute, Beckman Institute and Joint Center for Artificial Photosynthesis, Division of Chemistry and Chemical Engineering, 210 Noyes Laboratory, 127-72, California Institute of Technology</s1><s2>Pasadena, California 91125</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Pasadena, California 91125</wicri:noRegion></affiliation></author><author><name sortKey="Wiggenhorn, Craig" uniqKey="Wiggenhorn C">Craig Wiggenhorn</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Kavli Nanoscience Institute, Beckman Institute and Joint Center for Artificial Photosynthesis, Division of Chemistry and Chemical Engineering, 210 Noyes Laboratory, 127-72, California Institute of Technology</s1><s2>Pasadena, California 91125</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Pasadena, California 91125</wicri:noRegion></affiliation></author><author><name sortKey="Brunschwig, Bruce S" uniqKey="Brunschwig B">Bruce S. Brunschwig</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Kavli Nanoscience Institute, Beckman Institute and Joint Center for Artificial Photosynthesis, Division of Chemistry and Chemical Engineering, 210 Noyes Laboratory, 127-72, California Institute of Technology</s1><s2>Pasadena, California 91125</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Pasadena, California 91125</wicri:noRegion></affiliation></author><author><name sortKey="Lewis, Nathan S" uniqKey="Lewis N">Nathan S. Lewis</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Kavli Nanoscience Institute, Beckman Institute and Joint Center for Artificial Photosynthesis, Division of Chemistry and Chemical Engineering, 210 Noyes Laboratory, 127-72, California Institute of Technology</s1><s2>Pasadena, California 91125</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Pasadena, California 91125</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">13-0181418</idno><date when="2013">2013</date><idno type="stanalyst">PASCAL 13-0181418 INIST</idno><idno type="RBID">Pascal:13-0181418</idno><idno type="wicri:Area/Main/Corpus">000E04</idno><idno type="wicri:Area/Main/Repository">000E02</idno></publicationStmt><seriesStmt><idno type="ISSN">1932-7447</idno><title level="j" type="abbreviated">J. phys. chem., C</title><title level="j" type="main">Journal of physical chemistry. C</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Doping</term><term>Manufacturing</term><term>Photoanodes</term><term>Photocathode</term><term>Photoconductivity</term><term>Photoelectrochemical cell</term><term>Semiconductor materials</term><term>Silicon</term><term>Tandem solar cell</term><term>Thin film</term><term>Tungsten oxide</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Photocathode</term><term>Photoconductivité</term><term>Dopage</term><term>Cellule solaire tandem</term><term>Cellule photoélectrochimique</term><term>Photoanode</term><term>Fabrication</term><term>Silicium</term><term>Oxyde de tungstène</term><term>Semiconducteur</term><term>Couche mince</term><term>Si</term><term>WO3</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Dopage</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Tungsten trioxide (WO<sub>3</sub>) has been investigated as a photoanode for water oxidation reactions in acidic aqueous conditions. Though WO<sub>3</sub> is not capable of performing unassisted solar-driven water splitting, WO<sub>3</sub> can in principle be coupled with a low band gap semiconductor, such as Si, to produce a stand-alone, tandem photocathode/photoanode p-Si/n-WO<sub>3</sub> system for solar fuels production. Junctions between Si and WO<sub>3</sub>, with and without intervening ohmic contacts, were therefore prepared and investigated in detail. Thin films of n-WO<sub>3</sub> that were prepared directly on p-Si and n-Si substrates exhibited an onset of photocurrent at a potential consistent with expectations based on the band-edge alignment of these two materials predicted by Andersen theory. However, n-WO<sub>3</sub> films deposited on Si substrates exhibited much lower anodic photocurrent densities (∼0.02 mA cm<sup>-2</sup> at 1.0 V vs SCE) than identically prepared n-WO<sub>3</sub> films that were deposited on fluorine-doped tin oxide (FTO) substrates (0.45 mA cm<sup>-2</sup> at 1.0 V vs SCE). Deposition of n-WO<sub>3</sub> onto a thin layer of tin-doped indium oxide (ITO) that had been deposited on a Si substrate yielded anodic photocurrent densities that were comparable to those observed for n-WO<sub>3</sub> films that had been deposited onto FTO-coated glass. An increased photovoltage was observed when an n-Si/ITO Schottky junction was formed in series with the n-WO<sub>3</sub> film, relative to when the WO<sub>3</sub> was deposited directly onto the Si. Hence, inclusion of the ITO layer allowed for tandem photoelectrochemical devices to be prepared using n-WO<sub>3</sub> and n-Si as the light absorbers.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1932-7447</s0></fA01><fA03 i2="1"><s0>J. phys. chem., C</s0></fA03><fA05><s2>117</s2></fA05><fA06><s2>14</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Electrical and Photoelectrochemical<sup>-</sup>Properties of W0<sub>3</sub>/Si Tandem Photoelectrodes</s1></fA08><fA11 i1="01" i2="1"><s1>CORIDAN (Robert H.)</s1></fA11><fA11 i1="02" i2="1"><s1>SHANER (Matthew)</s1></fA11><fA11 i1="03" i2="1"><s1>WIGGENHORN (Craig)</s1></fA11><fA11 i1="04" i2="1"><s1>BRUNSCHWIG (Bruce S.)</s1></fA11><fA11 i1="05" i2="1"><s1>LEWIS (Nathan S.)</s1></fA11><fA14 i1="01"><s1>Kavli Nanoscience Institute, Beckman Institute and Joint Center for Artificial Photosynthesis, Division of Chemistry and Chemical Engineering, 210 Noyes Laboratory, 127-72, California Institute of Technology</s1><s2>Pasadena, California 91125</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></fA14><fA20><s1>6949-6957</s1></fA20><fA21><s1>2013</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>549C</s2><s5>354000173344190060</s5></fA43><fA44><s0>0000</s0><s1>© 2013 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>23 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>13-0181418</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of physical chemistry. C</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>Tungsten trioxide (WO<sub>3</sub>) has been investigated as a photoanode for water oxidation reactions in acidic aqueous conditions. Though WO<sub>3</sub> is not capable of performing unassisted solar-driven water splitting, WO<sub>3</sub> can in principle be coupled with a low band gap semiconductor, such as Si, to produce a stand-alone, tandem photocathode/photoanode p-Si/n-WO<sub>3</sub> system for solar fuels production. Junctions between Si and WO<sub>3</sub>, with and without intervening ohmic contacts, were therefore prepared and investigated in detail. Thin films of n-WO<sub>3</sub> that were prepared directly on p-Si and n-Si substrates exhibited an onset of photocurrent at a potential consistent with expectations based on the band-edge alignment of these two materials predicted by Andersen theory. However, n-WO<sub>3</sub> films deposited on Si substrates exhibited much lower anodic photocurrent densities (∼0.02 mA cm<sup>-2</sup> at 1.0 V vs SCE) than identically prepared n-WO<sub>3</sub> films that were deposited on fluorine-doped tin oxide (FTO) substrates (0.45 mA cm<sup>-2</sup> at 1.0 V vs SCE). Deposition of n-WO<sub>3</sub> onto a thin layer of tin-doped indium oxide (ITO) that had been deposited on a Si substrate yielded anodic photocurrent densities that were comparable to those observed for n-WO<sub>3</sub> films that had been deposited onto FTO-coated glass. An increased photovoltage was observed when an n-Si/ITO Schottky junction was formed in series with the n-WO<sub>3</sub> film, relative to when the WO<sub>3</sub> was deposited directly onto the Si. Hence, inclusion of the ITO layer allowed for tandem photoelectrochemical devices to be prepared using n-WO<sub>3</sub> and n-Si as the light absorbers.</s0></fC01><fC02 i1="01" i2="X"><s0>001D06C02D1</s0></fC02><fC02 i1="02" i2="X"><s0>230</s0></fC02><fC03 i1="01" i2="X" l="FRE"><s0>Photocathode</s0><s5>05</s5></fC03><fC03 i1="01" i2="X" l="ENG"><s0>Photocathode</s0><s5>05</s5></fC03><fC03 i1="01" i2="X" l="SPA"><s0>Fotocátodo</s0><s5>05</s5></fC03><fC03 i1="02" i2="X" l="FRE"><s0>Photoconductivité</s0><s5>08</s5></fC03><fC03 i1="02" i2="X" l="ENG"><s0>Photoconductivity</s0><s5>08</s5></fC03><fC03 i1="02" i2="X" l="SPA"><s0>Fotoconductividad</s0><s5>08</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Dopage</s0><s5>09</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>Doping</s0><s5>09</s5></fC03><fC03 i1="03" i2="X" l="SPA"><s0>Doping</s0><s5>09</s5></fC03><fC03 i1="04" i2="X" l="FRE"><s0>Cellule solaire tandem</s0><s5>11</s5></fC03><fC03 i1="04" i2="X" l="ENG"><s0>Tandem solar cell</s0><s5>11</s5></fC03><fC03 i1="04" i2="X" l="SPA"><s0>Célula solar tándem</s0><s5>11</s5></fC03><fC03 i1="05" i2="X" l="FRE"><s0>Cellule photoélectrochimique</s0><s5>12</s5></fC03><fC03 i1="05" i2="X" l="ENG"><s0>Photoelectrochemical cell</s0><s5>12</s5></fC03><fC03 i1="05" i2="X" l="SPA"><s0>Célula fotoelectroquímica</s0><s5>12</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Photoanode</s0><s5>13</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Photoanodes</s0><s5>13</s5></fC03><fC03 i1="07" i2="X" l="FRE"><s0>Fabrication</s0><s5>14</s5></fC03><fC03 i1="07" i2="X" l="ENG"><s0>Manufacturing</s0><s5>14</s5></fC03><fC03 i1="07" i2="X" l="SPA"><s0>Fabricación</s0><s5>14</s5></fC03><fC03 i1="08" i2="X" l="FRE"><s0>Silicium</s0><s2>NC</s2><s5>15</s5></fC03><fC03 i1="08" i2="X" l="ENG"><s0>Silicon</s0><s2>NC</s2><s5>15</s5></fC03><fC03 i1="08" i2="X" l="SPA"><s0>Silicio</s0><s2>NC</s2><s5>15</s5></fC03><fC03 i1="09" i2="X" l="FRE"><s0>Oxyde de tungstène</s0><s5>17</s5></fC03><fC03 i1="09" i2="X" l="ENG"><s0>Tungsten oxide</s0><s5>17</s5></fC03><fC03 i1="09" i2="X" l="SPA"><s0>Wolframio óxido</s0><s5>17</s5></fC03><fC03 i1="10" i2="X" l="FRE"><s0>Semiconducteur</s0><s5>18</s5></fC03><fC03 i1="10" i2="X" l="ENG"><s0>Semiconductor materials</s0><s5>18</s5></fC03><fC03 i1="10" i2="X" l="SPA"><s0>Semiconductor(material)</s0><s5>18</s5></fC03><fC03 i1="11" i2="X" l="FRE"><s0>Couche mince</s0><s5>19</s5></fC03><fC03 i1="11" i2="X" l="ENG"><s0>Thin film</s0><s5>19</s5></fC03><fC03 i1="11" i2="X" l="SPA"><s0>Capa fina</s0><s5>19</s5></fC03><fC03 i1="12" i2="X" l="FRE"><s0>Si</s0><s4>INC</s4><s5>52</s5></fC03><fC03 i1="13" i2="X" l="FRE"><s0>WO3</s0><s4>INC</s4><s5>54</s5></fC03><fN21><s1>161</s1></fN21></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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