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Hydrogenated IGZO Thin-Film Transistors Using High-Pressure Hydrogen Annealing

Identifieur interne : 000B72 ( Main/Repository ); précédent : 000B71; suivant : 000B73

Hydrogenated IGZO Thin-Film Transistors Using High-Pressure Hydrogen Annealing

Auteurs : RBID : Pascal:13-0261148

Descripteurs français

Pascal (Inist)
- Transistor couche mince, Recuit, Hydrogénation, Densité porteur charge, Mobilité Hall, Caractéristique électrique, Seuil tension, Matériau amorphe, Hydrogène, Couche mince, Indium, Gallium.
Wicri :
- concept : Matériau amorphe, Hydrogène.

English descriptors

KwdEn :
- Amorphous material, Annealing, Charge carrier density, Electrical characteristic, Gallium, Hall mobility, Hydrogen, Hydrogenation, Indium, Thin film, Thin film transistor, Voltage threshold.

Abstract

Hydrogenation of thin-film indium-gallium-zincoxide (IGZO) is carried out by applying a high-pressure hydrogen annealing (HPHA) process under 5-atm pressure at different temperatures of 260 °C, 270 °C, and 280 °C. The HPHA effectively increases the carrier concentration and the Hall mobility up to ∼10¹⁹ cm^-3 and ˜6.4 cm²/Vs, respectively. The HPHA-IGZO films exhibit smoother surfaces as compared with the as-grown films. The HPHA performs at a temperature of 260 °C that greatly enhances the electrical characteristics of IGZO TFTs, leading to a saturation field effect mobility of 7.4 cm²/Vs, a subthreshold slope of 0.37 V/decade, a threshold voltage of 2.2 V, and an I_ON/I_OFF of 2.0 × 10⁶.

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Pascal:13-0261148

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Hydrogenated IGZO Thin-Film Transistors Using High-Pressure Hydrogen Annealing</title>
<author><name sortKey="Oh, Se I" uniqKey="Oh S">Se-I Oh</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of WCU Nanobio Materials and Electronics, the Department of Information and Communications, Gwangju Institute of Science and Technology</s1>
<s2>Gwangju 500-712</s2>
<s3>KOR</s3>
<sZ>1 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>Corée du Sud</country>
<wicri:noRegion>Gwangju 500-712</wicri:noRegion>
</affiliation>
</author>
<author><name>GODEUNI CHOI</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Materials Science and Engineering, Gwangju Institute of Science and Technology</s1>
<s2>Gwangju 500-712</s2>
<s3>KOR</s3>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>Corée du Sud</country>
<wicri:noRegion>Gwangju 500-712</wicri:noRegion>
</affiliation>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Pohang University of Science and Technology</s1>
<s2>Pohang 790-784</s2>
<s3>KOR</s3>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>Corée du Sud</country>
<wicri:noRegion>Pohang University of Science and Technology</wicri:noRegion>
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</author>
<author><name>HYUNSANG HWANG</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Materials Science and Engineering, Gwangju Institute of Science and Technology</s1>
<s2>Gwangju 500-712</s2>
<s3>KOR</s3>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
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<country>Corée du Sud</country>
<wicri:noRegion>Gwangju 500-712</wicri:noRegion>
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<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Pohang University of Science and Technology</s1>
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<sZ>3 aut.</sZ>
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<country>Corée du Sud</country>
<wicri:noRegion>Pohang University of Science and Technology</wicri:noRegion>
</affiliation>
</author>
<author><name>WU LU</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of WCU Nanobio Materials and Electronics, the Department of Information and Communications, Gwangju Institute of Science and Technology</s1>
<s2>Gwangju 500-712</s2>
<s3>KOR</s3>
<sZ>1 aut.</sZ>
<sZ>4 aut.</sZ>
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<country>Corée du Sud</country>
<wicri:noRegion>Gwangju 500-712</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Jang, Jae Hyung" uniqKey="Jang J">Jae-Hyung Jang</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of WCU Nanobio Materials and Electronics, the Department of Information and Communications, Gwangju Institute of Science and Technology</s1>
<s2>Gwangju 500-712</s2>
<s3>KOR</s3>
<sZ>1 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
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<country>Corée du Sud</country>
<wicri:noRegion>Gwangju 500-712</wicri:noRegion>
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<seriesStmt><idno type="ISSN">0018-9383</idno>
<title level="j" type="abbreviated">IEEE trans. electron devices</title>
<title level="j" type="main">I.E.E.E. transactions on electron devices</title>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Amorphous material</term>
<term>Annealing</term>
<term>Charge carrier density</term>
<term>Electrical characteristic</term>
<term>Gallium</term>
<term>Hall mobility</term>
<term>Hydrogen</term>
<term>Hydrogenation</term>
<term>Indium</term>
<term>Thin film</term>
<term>Thin film transistor</term>
<term>Voltage threshold</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Transistor couche mince</term>
<term>Recuit</term>
<term>Hydrogénation</term>
<term>Densité porteur charge</term>
<term>Mobilité Hall</term>
<term>Caractéristique électrique</term>
<term>Seuil tension</term>
<term>Matériau amorphe</term>
<term>Hydrogène</term>
<term>Couche mince</term>
<term>Indium</term>
<term>Gallium</term>
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<keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Matériau amorphe</term>
<term>Hydrogène</term>
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<front><div type="abstract" xml:lang="en">Hydrogenation of thin-film indium-gallium-zincoxide (IGZO) is carried out by applying a high-pressure hydrogen annealing (HPHA) process under 5-atm pressure at different temperatures of 260 °C, 270 °C, and 280 °C. The HPHA effectively increases the carrier concentration and the Hall mobility up to ∼10<sup>19</sup>
 cm<sup>-3</sup>
 and ˜6.4 cm<sup>2</sup>
/Vs, respectively. The HPHA-IGZO films exhibit smoother surfaces as compared with the as-grown films. The HPHA performs at a temperature of 260 °C that greatly enhances the electrical characteristics of IGZO TFTs, leading to a saturation field effect mobility of 7.4 cm<sup>2</sup>
/Vs, a subthreshold slope of 0.37 V/decade, a threshold voltage of 2.2 V, and an I<sub>ON</sub>
/I<sub>OFF</sub>
 of 2.0 × 10<sup>6</sup>
.</div>
</front>
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<fA11 i1="01" i2="1"><s1>OH (Se-I)</s1>
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<fA11 i1="02" i2="1"><s1>GODEUNI CHOI</s1>
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<fA11 i1="03" i2="1"><s1>HYUNSANG HWANG</s1>
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<fA11 i1="04" i2="1"><s1>WU LU</s1>
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<fA11 i1="05" i2="1"><s1>JANG (Jae-Hyung)</s1>
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<sZ>1 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
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<fA14 i1="02"><s1>Department of Materials Science and Engineering, Gwangju Institute of Science and Technology</s1>
<s2>Gwangju 500-712</s2>
<s3>KOR</s3>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
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<fA14 i1="03"><s1>Pohang University of Science and Technology</s1>
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<sZ>3 aut.</sZ>
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<fC01 i1="01" l="ENG"><s0>Hydrogenation of thin-film indium-gallium-zincoxide (IGZO) is carried out by applying a high-pressure hydrogen annealing (HPHA) process under 5-atm pressure at different temperatures of 260 °C, 270 °C, and 280 °C. The HPHA effectively increases the carrier concentration and the Hall mobility up to ∼10<sup>19</sup>
 cm<sup>-3</sup>
 and ˜6.4 cm<sup>2</sup>
/Vs, respectively. The HPHA-IGZO films exhibit smoother surfaces as compared with the as-grown films. The HPHA performs at a temperature of 260 °C that greatly enhances the electrical characteristics of IGZO TFTs, leading to a saturation field effect mobility of 7.4 cm<sup>2</sup>
/Vs, a subthreshold slope of 0.37 V/decade, a threshold voltage of 2.2 V, and an I<sub>ON</sub>
/I<sub>OFF</sub>
 of 2.0 × 10<sup>6</sup>
.</s0>
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<s5>04</s5>
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<s5>04</s5>
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<s2>FX</s2>
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</fN21>
<fN44 i1="01"><s1>OTO</s1>
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Hydrogenated IGZO Thin-Film Transistors Using High-Pressure Hydrogen Annealing

Hydrogenated IGZO Thin-Film Transistors Using High-Pressure Hydrogen Annealing

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri