Improvement of mechanical reliability by patterned silver/Indium-Tin-Oxide structure for flexible electronic devices
Identifieur interne : 000B30 ( Main/Repository ); précédent : 000B29; suivant : 000B31Improvement of mechanical reliability by patterned silver/Indium-Tin-Oxide structure for flexible electronic devices
Auteurs : RBID : Pascal:13-0161865Descripteurs français
- Pascal (Inist)
- Fiabilité, Structure flexible, Couche tampon, Couche mince, Téréphtalate, Propriété optique, Caractéristique électrique, Structure lamellaire, Résistivité couche, Facteur transmission, Couche épaisse, Flexion, Effet contrainte, Corrosion, Oxyde d'argent, Oxyde d'indium, Oxyde d'étain, Argent, Fissuration, Propriété mécanique, Dispositif optoélectronique, Module Young, Substrat oxyde d'indium et de zinc, Substrat InSnO, 7866, 6860B, 8560, 4335N.
- Wicri :
English descriptors
- KwdEn :
- Bending, Buffer layer, Corrosion, Cracking, Electrical characteristic, Flexible structures, Indium oxide, Lamellar structure, Mechanical properties, Optical properties, Optoelectronic devices, Reliability, Sheet resistivity, Silver, Silver oxide, Stress effects, Terephthalates, Thick films, Thin films, Tin oxide, Transmittance, Young modulus.
Abstract
We report the effect of silver (Ag)-buffer layer Indium-Tin-Oxide (ITO) film on a polyethylene terephthalate substrate on the electrical, optical and reliable properties for transparent-flexible displays. The electrical and optical characteristics of an ITO-only film and an Ag-layer-inserted ITO film are measured and compared to assess the applicability of the triple layered structure in flexible displays. The sheet resistance, the resistivity and the light transmittance of the ITO-only film were 400 Ω/sq, 1.33 × 10-3 Ω-cm and 99.2%, while those of the ITO film inserted with a 10 nm thick Ag layer were 165 Ω/sq, 4.78 x 10-4 Ω-cm and about 97%, respectively. To evaluate the mechanical reliability of the different ITO films, bending tests were carried out. After the dynamic bending test of 900 cycles, the sheet resistance of the ITO film inserted with the Ag layer changed from 154 Ω/sq to 475 Ω/sq, about a 3-time increase but that of the ITO-only film changed from 400 Ω/sq to 61,986 Ω/sq, about 150-time increase. When the radius is changed from 25 mm to 20 mm in the static bending test, the sheet resistance of the ITO-only film changed from 400 to 678.3 linearly whereas that of the Ag-layer inserted ITO film changed a little from 154.4 to 154.9. These results show that Ag-layer inserted ITO film had better mechanical characteristics than the ITO-only film.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Improvement of mechanical reliability by patterned silver/Indium-Tin-Oxide structure for flexible electronic devices</title><author><name sortKey="Baek, Kyunghyun" uniqKey="Baek K">Kyunghyun Baek</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>School of Electronic Electrical Engineering, College of Information and Communication Engineering, Sungkyunkwan University</s1><s2>Suwon 440-746</s2><s3>KOR</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Corée du Sud</country><wicri:noRegion>Suwon 440-746</wicri:noRegion></affiliation></author><author><name sortKey="Jang, Kyungsoo" uniqKey="Jang K">Kyungsoo Jang</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>School of Electronic Electrical Engineering, College of Information and Communication Engineering, Sungkyunkwan University</s1><s2>Suwon 440-746</s2><s3>KOR</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Corée du Sud</country><wicri:noRegion>Suwon 440-746</wicri:noRegion></affiliation></author><author><name sortKey="Lee, Youn Jung" uniqKey="Lee Y">Youn-Jung Lee</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>School of Electronic Electrical Engineering, College of Information and Communication Engineering, Sungkyunkwan University</s1><s2>Suwon 440-746</s2><s3>KOR</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Corée du Sud</country><wicri:noRegion>Suwon 440-746</wicri:noRegion></affiliation></author><author><name sortKey="Ryu, Kyungyul" uniqKey="Ryu K">Kyungyul Ryu</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>School of Electronic Electrical Engineering, College of Information and Communication Engineering, Sungkyunkwan University</s1><s2>Suwon 440-746</s2><s3>KOR</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Corée du Sud</country><wicri:noRegion>Suwon 440-746</wicri:noRegion></affiliation></author><author><name sortKey="Choi, Woojin" uniqKey="Choi W">Woojin Choi</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>School of Electronic Electrical Engineering, College of Information and Communication Engineering, Sungkyunkwan University</s1><s2>Suwon 440-746</s2><s3>KOR</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Corée du Sud</country><wicri:noRegion>Suwon 440-746</wicri:noRegion></affiliation></author><author><name sortKey="Kim, Doyoung" uniqKey="Kim D">Doyoung Kim</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>School of Electricity and Electronics, Ulsan College</s1><s2>Ulsan 680-749</s2><s3>KOR</s3><sZ>6 aut.</sZ></inist:fA14><country>Corée du Sud</country><wicri:noRegion>Ulsan 680-749</wicri:noRegion></affiliation></author><author><name>JUNSIN YI</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>School of Electronic Electrical Engineering, College of Information and Communication Engineering, Sungkyunkwan University</s1><s2>Suwon 440-746</s2><s3>KOR</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Corée du Sud</country><wicri:noRegion>Suwon 440-746</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">13-0161865</idno><date when="2013">2013</date><idno type="stanalyst">PASCAL 13-0161865 INIST</idno><idno type="RBID">Pascal:13-0161865</idno><idno type="wicri:Area/Main/Corpus">000E92</idno><idno type="wicri:Area/Main/Repository">000B30</idno></publicationStmt><seriesStmt><idno type="ISSN">0040-6090</idno><title level="j" type="abbreviated">Thin solid films</title><title level="j" type="main">Thin solid films</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Bending</term><term>Buffer layer</term><term>Corrosion</term><term>Cracking</term><term>Electrical characteristic</term><term>Flexible structures</term><term>Indium oxide</term><term>Lamellar structure</term><term>Mechanical properties</term><term>Optical properties</term><term>Optoelectronic devices</term><term>Reliability</term><term>Sheet resistivity</term><term>Silver</term><term>Silver oxide</term><term>Stress effects</term><term>Terephthalates</term><term>Thick films</term><term>Thin films</term><term>Tin oxide</term><term>Transmittance</term><term>Young modulus</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Fiabilité</term><term>Structure flexible</term><term>Couche tampon</term><term>Couche mince</term><term>Téréphtalate</term><term>Propriété optique</term><term>Caractéristique électrique</term><term>Structure lamellaire</term><term>Résistivité couche</term><term>Facteur transmission</term><term>Couche épaisse</term><term>Flexion</term><term>Effet contrainte</term><term>Corrosion</term><term>Oxyde d'argent</term><term>Oxyde d'indium</term><term>Oxyde d'étain</term><term>Argent</term><term>Fissuration</term><term>Propriété mécanique</term><term>Dispositif optoélectronique</term><term>Module Young</term><term>Substrat oxyde d'indium et de zinc</term><term>Substrat InSnO</term><term>7866</term><term>6860B</term><term>8560</term><term>4335N</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Corrosion</term><term>Argent</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We report the effect of silver (Ag)-buffer layer Indium-Tin-Oxide (ITO) film on a polyethylene terephthalate substrate on the electrical, optical and reliable properties for transparent-flexible displays. The electrical and optical characteristics of an ITO-only film and an Ag-layer-inserted ITO film are measured and compared to assess the applicability of the triple layered structure in flexible displays. The sheet resistance, the resistivity and the light transmittance of the ITO-only film were 400 Ω/sq, 1.33 × 10<sup>-3</sup> Ω-cm and 99.2%, while those of the ITO film inserted with a 10 nm thick Ag layer were 165 Ω/sq, 4.78 x 10-<sup>4</sup> Ω-cm and about 97%, respectively. To evaluate the mechanical reliability of the different ITO films, bending tests were carried out. After the dynamic bending test of 900 cycles, the sheet resistance of the ITO film inserted with the Ag layer changed from 154 Ω/sq to 475 Ω/sq, about a 3-time increase but that of the ITO-only film changed from 400 Ω/sq to 61,986 Ω/sq, about 150-time increase. When the radius is changed from 25 mm to 20 mm in the static bending test, the sheet resistance of the ITO-only film changed from 400 to 678.3 linearly whereas that of the Ag-layer inserted ITO film changed a little from 154.4 to 154.9. These results show that Ag-layer inserted ITO film had better mechanical characteristics than the ITO-only film.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0040-6090</s0></fA01><fA02 i1="01"><s0>THSFAP</s0></fA02><fA03 i2="1"><s0>Thin solid films</s0></fA03><fA05><s2>531</s2></fA05><fA08 i1="01" i2="1" l="ENG"><s1>Improvement of mechanical reliability by patterned silver/Indium-Tin-Oxide structure for flexible electronic devices</s1></fA08><fA11 i1="01" i2="1"><s1>BAEK (Kyunghyun)</s1></fA11><fA11 i1="02" i2="1"><s1>JANG (Kyungsoo)</s1></fA11><fA11 i1="03" i2="1"><s1>LEE (Youn-Jung)</s1></fA11><fA11 i1="04" i2="1"><s1>RYU (Kyungyul)</s1></fA11><fA11 i1="05" i2="1"><s1>CHOI (Woojin)</s1></fA11><fA11 i1="06" i2="1"><s1>KIM (Doyoung)</s1></fA11><fA11 i1="07" i2="1"><s1>JUNSIN YI</s1></fA11><fA14 i1="01"><s1>School of Electronic Electrical Engineering, College of Information and Communication Engineering, Sungkyunkwan University</s1><s2>Suwon 440-746</s2><s3>KOR</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>7 aut.</sZ></fA14><fA14 i1="02"><s1>School of Electricity and Electronics, Ulsan College</s1><s2>Ulsan 680-749</s2><s3>KOR</s3><sZ>6 aut.</sZ></fA14><fA20><s1>349-353</s1></fA20><fA21><s1>2013</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>13597</s2><s5>354000500618870530</s5></fA43><fA44><s0>0000</s0><s1>© 2013 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>16 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>13-0161865</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Thin solid films</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>We report the effect of silver (Ag)-buffer layer Indium-Tin-Oxide (ITO) film on a polyethylene terephthalate substrate on the electrical, optical and reliable properties for transparent-flexible displays. The electrical and optical characteristics of an ITO-only film and an Ag-layer-inserted ITO film are measured and compared to assess the applicability of the triple layered structure in flexible displays. The sheet resistance, the resistivity and the light transmittance of the ITO-only film were 400 Ω/sq, 1.33 × 10<sup>-3</sup> Ω-cm and 99.2%, while those of the ITO film inserted with a 10 nm thick Ag layer were 165 Ω/sq, 4.78 x 10-<sup>4</sup> Ω-cm and about 97%, respectively. To evaluate the mechanical reliability of the different ITO films, bending tests were carried out. After the dynamic bending test of 900 cycles, the sheet resistance of the ITO film inserted with the Ag layer changed from 154 Ω/sq to 475 Ω/sq, about a 3-time increase but that of the ITO-only film changed from 400 Ω/sq to 61,986 Ω/sq, about 150-time increase. When the radius is changed from 25 mm to 20 mm in the static bending test, the sheet resistance of the ITO-only film changed from 400 to 678.3 linearly whereas that of the Ag-layer inserted ITO film changed a little from 154.4 to 154.9. These results show that Ag-layer inserted ITO film had better mechanical characteristics than the ITO-only film.</s0></fC01><fC02 i1="01" i2="3"><s0>001B70H66</s0></fC02><fC02 i1="02" i2="3"><s0>001B60H60B</s0></fC02><fC02 i1="03" i2="X"><s0>001D03F15</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Fiabilité</s0><s5>01</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Reliability</s0><s5>01</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Structure flexible</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Flexible structures</s0><s5>02</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Couche tampon</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>Buffer layer</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="SPA"><s0>Capa tampón</s0><s5>03</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Couche mince</s0><s5>04</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Thin films</s0><s5>04</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Téréphtalate</s0><s2>NK</s2><s5>05</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Terephthalates</s0><s2>NK</s2><s5>05</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Propriété optique</s0><s5>06</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Optical properties</s0><s5>06</s5></fC03><fC03 i1="07" i2="X" l="FRE"><s0>Caractéristique électrique</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="ENG"><s0>Electrical characteristic</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="SPA"><s0>Característica eléctrica</s0><s5>07</s5></fC03><fC03 i1="08" i2="X" l="FRE"><s0>Structure lamellaire</s0><s5>08</s5></fC03><fC03 i1="08" i2="X" l="ENG"><s0>Lamellar structure</s0><s5>08</s5></fC03><fC03 i1="08" i2="X" l="SPA"><s0>Estructura lamelar</s0><s5>08</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Résistivité couche</s0><s5>09</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Sheet resistivity</s0><s5>09</s5></fC03><fC03 i1="10" i2="X" l="FRE"><s0>Facteur transmission</s0><s5>10</s5></fC03><fC03 i1="10" i2="X" l="ENG"><s0>Transmittance</s0><s5>10</s5></fC03><fC03 i1="10" i2="X" l="SPA"><s0>Factor transmisión</s0><s5>10</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Couche épaisse</s0><s5>11</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Thick films</s0><s5>11</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Flexion</s0><s5>12</s5></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Bending</s0><s5>12</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Effet contrainte</s0><s5>13</s5></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Stress effects</s0><s5>13</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Corrosion</s0><s5>14</s5></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Corrosion</s0><s5>14</s5></fC03><fC03 i1="15" i2="X" l="FRE"><s0>Oxyde d'argent</s0><s5>15</s5></fC03><fC03 i1="15" i2="X" l="ENG"><s0>Silver oxide</s0><s5>15</s5></fC03><fC03 i1="15" i2="X" l="SPA"><s0>Plata óxido</s0><s5>15</s5></fC03><fC03 i1="16" i2="X" l="FRE"><s0>Oxyde d'indium</s0><s5>16</s5></fC03><fC03 i1="16" i2="X" l="ENG"><s0>Indium oxide</s0><s5>16</s5></fC03><fC03 i1="16" i2="X" l="SPA"><s0>Indio óxido</s0><s5>16</s5></fC03><fC03 i1="17" i2="X" l="FRE"><s0>Oxyde d'étain</s0><s5>17</s5></fC03><fC03 i1="17" i2="X" l="ENG"><s0>Tin oxide</s0><s5>17</s5></fC03><fC03 i1="17" i2="X" l="SPA"><s0>Estaño óxido</s0><s5>17</s5></fC03><fC03 i1="18" i2="3" l="FRE"><s0>Argent</s0><s2>NC</s2><s5>18</s5></fC03><fC03 i1="18" i2="3" l="ENG"><s0>Silver</s0><s2>NC</s2><s5>18</s5></fC03><fC03 i1="19" i2="3" l="FRE"><s0>Fissuration</s0><s5>29</s5></fC03><fC03 i1="19" i2="3" l="ENG"><s0>Cracking</s0><s5>29</s5></fC03><fC03 i1="20" i2="3" l="FRE"><s0>Propriété mécanique</s0><s5>30</s5></fC03><fC03 i1="20" i2="3" l="ENG"><s0>Mechanical properties</s0><s5>30</s5></fC03><fC03 i1="21" i2="3" l="FRE"><s0>Dispositif optoélectronique</s0><s5>31</s5></fC03><fC03 i1="21" i2="3" l="ENG"><s0>Optoelectronic devices</s0><s5>31</s5></fC03><fC03 i1="22" i2="3" l="FRE"><s0>Module Young</s0><s5>32</s5></fC03><fC03 i1="22" i2="3" l="ENG"><s0>Young modulus</s0><s5>32</s5></fC03><fC03 i1="23" i2="3" l="FRE"><s0>Substrat oxyde d'indium et de zinc</s0><s4>INC</s4><s5>46</s5></fC03><fC03 i1="24" i2="3" l="FRE"><s0>Substrat InSnO</s0><s4>INC</s4><s5>47</s5></fC03><fC03 i1="25" i2="3" l="FRE"><s0>7866</s0><s4>INC</s4><s5>71</s5></fC03><fC03 i1="26" i2="3" l="FRE"><s0>6860B</s0><s4>INC</s4><s5>72</s5></fC03><fC03 i1="27" i2="3" l="FRE"><s0>8560</s0><s4>INC</s4><s5>73</s5></fC03><fC03 i1="28" i2="3" l="FRE"><s0>4335N</s0><s4>INC</s4><s5>74</s5></fC03><fN21><s1>140</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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