IndiumV3, Main, Repository, bibRecord, 000B05

InAs Nanowires Grown by Metal-Organic Vapor-Phase Epitaxy (MOVPE) Employing PS/PMMA Diblock Copolymer Nanopatterning

Identifieur interne : 000B05 ( Main/Repository ); précédent : 000B04; suivant : 000B06

InAs Nanowires Grown by Metal-Organic Vapor-Phase Epitaxy (MOVPE) Employing PS/PMMA Diblock Copolymer Nanopatterning

Auteurs : RBID : Pascal:14-0035685

Descripteurs français

Pascal (Inist)
- Arséniure d'indium, Semiconducteur III-V, Composé III-V, Synthèse nanomatériau, Méthode MOVPE, Epitaxie phase vapeur, Copolymère biséquencé, Formation nanomotif, Réseau(arrangement), Nanofil, Nanomatériau, Aire sélective, Méthacrylate de méthyle polymère, Catalyseur, Nanostructure, Echelle nanométrique, Gravure ionique réactive, Gravure plasma, Microscopie électronique balayage, Microscopie électronique transmission, Défaut cristallin, Structure blende, Structure cristalline, Dislocation filetée, Substrat GaAs, 8116, 8116R, 8107V, 8107B.

English descriptors

KwdEn :
- Arrays, Blende structure, Catalysts, Crystal defects, Crystal structure, Diblock copolymer, III-V compound, III-V semiconductors, Indium arsenides, MOVPE method, Nanomaterial synthesis, Nanometer scale, Nanopatterning, Nanostructured materials, Nanostructures, Nanowires, PMMA, Plasma etching, Reactive ion etching, Scanning electron microscopy, Selective area, Threading dislocation, Transmission electron microscopy, VPE.

Abstract

Dense arrays of indium arsenide (InAs) nanowire materials have been grown by selective-area metal-organic vapor-phase epitaxy (SA-MOVPE) using polystyrene-b-poly(methyl methacrylate) (PS/PMMA) diblock copolymer (DBC) nanopatterning technique, which is a catalyst-free approach. Nanoscale openings were defined in a thin (˜10 nm) SiN_x, layer deposited on a (111)B-oriented GaAs substrate using the DBC process and CF₄ reactive ion etching (RIE), which served as a hard mask for the nanowire growth. InAs nanowires with diameters down to ˜20 nm and micrometer-scale lengths were achieved with a density of ˜5 × 10¹⁰ cm². The nanowire structures were characterized by scanning electron microscopy and transmission electron microscopy, which indicate twin defects in a primary zincblende crystal structure and the absence of threading dislocation within the imaged regions.

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Pascal:14-0035685

Le document en format XML

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<author><name>SHISHENG XIONG</name>
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<author><name sortKey="Mawst, Luke J" uniqKey="Mawst L">Luke J. Mawst</name>
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<author><name sortKey="Kuech, Thomas F" uniqKey="Kuech T">Thomas F. Kuech</name>
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<author><name sortKey="Nealey, Paul F" uniqKey="Nealey P">Paul F. Nealey</name>
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<author><name>YUSHUAI DAI</name>
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<author><name>ZIHAO WANG</name>
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<author><name>WEI GUO</name>
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<author><name sortKey="Forbes, David" uniqKey="Forbes D">David Forbes</name>
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<author><name sortKey="Hubbard, Seth M" uniqKey="Hubbard S">Seth M. Hubbard</name>
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</author>
<author><name sortKey="Nesnidal, Michael" uniqKey="Nesnidal M">Michael Nesnidal</name>
<affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Firefly Technologies, 2082 Hackbeny Lane</s1>
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<s3>USA</s3>
<sZ>12 aut.</sZ>
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<country>États-Unis</country>
<wicri:noRegion>Shakopee, Minnesota 55379</wicri:noRegion>
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<seriesStmt><idno type="ISSN">1530-6984</idno>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Arrays</term>
<term>Blende structure</term>
<term>Catalysts</term>
<term>Crystal defects</term>
<term>Crystal structure</term>
<term>Diblock copolymer</term>
<term>III-V compound</term>
<term>III-V semiconductors</term>
<term>Indium arsenides</term>
<term>MOVPE method</term>
<term>Nanomaterial synthesis</term>
<term>Nanometer scale</term>
<term>Nanopatterning</term>
<term>Nanostructured materials</term>
<term>Nanostructures</term>
<term>Nanowires</term>
<term>PMMA</term>
<term>Plasma etching</term>
<term>Reactive ion etching</term>
<term>Scanning electron microscopy</term>
<term>Selective area</term>
<term>Threading dislocation</term>
<term>Transmission electron microscopy</term>
<term>VPE</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Arséniure d'indium</term>
<term>Semiconducteur III-V</term>
<term>Composé III-V</term>
<term>Synthèse nanomatériau</term>
<term>Méthode MOVPE</term>
<term>Epitaxie phase vapeur</term>
<term>Copolymère biséquencé</term>
<term>Formation nanomotif</term>
<term>Réseau(arrangement)</term>
<term>Nanofil</term>
<term>Nanomatériau</term>
<term>Aire sélective</term>
<term>Méthacrylate de méthyle polymère</term>
<term>Catalyseur</term>
<term>Nanostructure</term>
<term>Echelle nanométrique</term>
<term>Gravure ionique réactive</term>
<term>Gravure plasma</term>
<term>Microscopie électronique balayage</term>
<term>Microscopie électronique transmission</term>
<term>Défaut cristallin</term>
<term>Structure blende</term>
<term>Structure cristalline</term>
<term>Dislocation filetée</term>
<term>Substrat GaAs</term>
<term>8116</term>
<term>8116R</term>
<term>8107V</term>
<term>8107B</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">Dense arrays of indium arsenide (InAs) nanowire materials have been grown by selective-area metal-organic vapor-phase epitaxy (SA-MOVPE) using polystyrene-b-poly(methyl methacrylate) (PS/PMMA) diblock copolymer (DBC) nanopatterning technique, which is a catalyst-free approach. Nanoscale openings were defined in a thin (˜10 nm) SiN<sub>x</sub>
, layer deposited on a (111)B-oriented GaAs substrate using the DBC process and CF<sub>4</sub>
 reactive ion etching (RIE), which served as a hard mask for the nanowire growth. InAs nanowires with diameters down to ˜20 nm and micrometer-scale lengths were achieved with a density of ˜5 × 10<sup>10</sup>
 cm<sup>2</sup>
. The nanowire structures were characterized by scanning electron microscopy and transmission electron microscopy, which indicate twin defects in a primary zincblende crystal structure and the absence of threading dislocation within the imaged regions.</div>
</front>
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<fA11 i1="01" i2="1"><s1>YINGGANG HUANG</s1>
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<fA11 i1="02" i2="1"><s1>TAE WAN KIM</s1>
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<fA11 i1="03" i2="1"><s1>SHISHENG XIONG</s1>
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<fA11 i1="06" i2="1"><s1>NEALEY (Paul F.)</s1>
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<fA11 i1="08" i2="1"><s1>ZIHAO WANG</s1>
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<fA11 i1="09" i2="1"><s1>WEI GUO</s1>
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<fA11 i1="10" i2="1"><s1>FORBES (David)</s1>
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<fA11 i1="11" i2="1"><s1>HUBBARD (Seth M.)</s1>
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<fA11 i1="12" i2="1"><s1>NESNIDAL (Michael)</s1>
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<fA14 i1="01"><s1>Department of Electrical and Computer Engineering, University of Wisconsin-Madison, 1415 Engineering Drive</s1>
<s2>Madison, Wisconsin 53706</s2>
<s3>USA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>4 aut.</sZ>
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<fA14 i1="02"><s1>Department of Chemical and Biological Engineering, University of Wisconsin-Madison, 1415 Engineering Drive</s1>
<s2>Madison, Wisconsin 53706</s2>
<s3>USA</s3>
<sZ>3 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</fA14>
<fA14 i1="03"><s1>NanoPower Research Labs, Rochester Institute of Technology, 156 Lomb Memorial Drive</s1>
<s2>Rochester, New York 14623</s2>
<s3>USA</s3>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
<sZ>9 aut.</sZ>
<sZ>10 aut.</sZ>
<sZ>11 aut.</sZ>
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<fA14 i1="04"><s1>Firefly Technologies, 2082 Hackbeny Lane</s1>
<s2>Shakopee, Minnesota 55379</s2>
<s3>USA</s3>
<sZ>12 aut.</sZ>
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<fA60><s1>P</s1>
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<fC01 i1="01" l="ENG"><s0>Dense arrays of indium arsenide (InAs) nanowire materials have been grown by selective-area metal-organic vapor-phase epitaxy (SA-MOVPE) using polystyrene-b-poly(methyl methacrylate) (PS/PMMA) diblock copolymer (DBC) nanopatterning technique, which is a catalyst-free approach. Nanoscale openings were defined in a thin (˜10 nm) SiN<sub>x</sub>
, layer deposited on a (111)B-oriented GaAs substrate using the DBC process and CF<sub>4</sub>
 reactive ion etching (RIE), which served as a hard mask for the nanowire growth. InAs nanowires with diameters down to ˜20 nm and micrometer-scale lengths were achieved with a density of ˜5 × 10<sup>10</sup>
 cm<sup>2</sup>
. The nanowire structures were characterized by scanning electron microscopy and transmission electron microscopy, which indicate twin defects in a primary zincblende crystal structure and the absence of threading dislocation within the imaged regions.</s0>
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<s5>01</s5>
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<s5>02</s5>
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<s5>03</s5>
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<s5>03</s5>
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<s5>03</s5>
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<s5>04</s5>
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<s5>05</s5>
</fC03>
<fC03 i1="05" i2="X" l="ENG"><s0>MOVPE method</s0>
<s5>05</s5>
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<s5>06</s5>
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<s2>NK</s2>
<s5>07</s5>
</fC03>
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<s2>NK</s2>
<s5>07</s5>
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<s2>NK</s2>
<s5>07</s5>
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<fC03 i1="08" i2="X" l="FRE"><s0>Formation nanomotif</s0>
<s5>08</s5>
</fC03>
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<s5>08</s5>
</fC03>
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<s5>08</s5>
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<s5>09</s5>
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<s5>09</s5>
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<s5>10</s5>
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<s5>10</s5>
</fC03>
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<s5>11</s5>
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<s5>11</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>Aire sélective</s0>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="3" l="ENG"><s0>Selective area</s0>
<s5>12</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>Méthacrylate de méthyle polymère</s0>
<s2>NK</s2>
<s5>13</s5>
</fC03>
<fC03 i1="13" i2="3" l="ENG"><s0>PMMA</s0>
<s2>NK</s2>
<s5>13</s5>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>Catalyseur</s0>
<s5>14</s5>
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<fC03 i1="14" i2="3" l="ENG"><s0>Catalysts</s0>
<s5>14</s5>
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<s5>29</s5>
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<s5>30</s5>
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<fC03 i1="16" i2="3" l="ENG"><s0>Nanometer scale</s0>
<s5>30</s5>
</fC03>
<fC03 i1="17" i2="X" l="FRE"><s0>Gravure ionique réactive</s0>
<s5>31</s5>
</fC03>
<fC03 i1="17" i2="X" l="ENG"><s0>Reactive ion etching</s0>
<s5>31</s5>
</fC03>
<fC03 i1="17" i2="X" l="SPA"><s0>Grabado iónico reactivo</s0>
<s5>31</s5>
</fC03>
<fC03 i1="18" i2="X" l="FRE"><s0>Gravure plasma</s0>
<s5>32</s5>
</fC03>
<fC03 i1="18" i2="X" l="ENG"><s0>Plasma etching</s0>
<s5>32</s5>
</fC03>
<fC03 i1="18" i2="X" l="SPA"><s0>Grabado plasma</s0>
<s5>32</s5>
</fC03>
<fC03 i1="19" i2="3" l="FRE"><s0>Microscopie électronique balayage</s0>
<s5>33</s5>
</fC03>
<fC03 i1="19" i2="3" l="ENG"><s0>Scanning electron microscopy</s0>
<s5>33</s5>
</fC03>
<fC03 i1="20" i2="3" l="FRE"><s0>Microscopie électronique transmission</s0>
<s5>34</s5>
</fC03>
<fC03 i1="20" i2="3" l="ENG"><s0>Transmission electron microscopy</s0>
<s5>34</s5>
</fC03>
<fC03 i1="21" i2="3" l="FRE"><s0>Défaut cristallin</s0>
<s5>35</s5>
</fC03>
<fC03 i1="21" i2="3" l="ENG"><s0>Crystal defects</s0>
<s5>35</s5>
</fC03>
<fC03 i1="22" i2="X" l="FRE"><s0>Structure blende</s0>
<s5>36</s5>
</fC03>
<fC03 i1="22" i2="X" l="ENG"><s0>Blende structure</s0>
<s5>36</s5>
</fC03>
<fC03 i1="22" i2="X" l="SPA"><s0>Estructura blenda</s0>
<s5>36</s5>
</fC03>
<fC03 i1="23" i2="3" l="FRE"><s0>Structure cristalline</s0>
<s5>37</s5>
</fC03>
<fC03 i1="23" i2="3" l="ENG"><s0>Crystal structure</s0>
<s5>37</s5>
</fC03>
<fC03 i1="24" i2="X" l="FRE"><s0>Dislocation filetée</s0>
<s5>38</s5>
</fC03>
<fC03 i1="24" i2="X" l="ENG"><s0>Threading dislocation</s0>
<s5>38</s5>
</fC03>
<fC03 i1="24" i2="X" l="SPA"><s0>Dislocación aterrajada</s0>
<s5>38</s5>
</fC03>
<fC03 i1="25" i2="3" l="FRE"><s0>Substrat GaAs</s0>
<s4>INC</s4>
<s5>46</s5>
</fC03>
<fC03 i1="26" i2="3" l="FRE"><s0>8116</s0>
<s4>INC</s4>
<s5>71</s5>
</fC03>
<fC03 i1="27" i2="3" l="FRE"><s0>8116R</s0>
<s4>INC</s4>
<s5>72</s5>
</fC03>
<fC03 i1="28" i2="3" l="FRE"><s0>8107V</s0>
<s4>INC</s4>
<s5>73</s5>
</fC03>
<fC03 i1="29" i2="3" l="FRE"><s0>8107B</s0>
<s4>INC</s4>
<s5>74</s5>
</fC03>
<fN21><s1>041</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
</fN44>
<fN82><s1>OTO</s1>
</fN82>
</pA>
</standard>
</inist>
</record>

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   |wiki=   *** parameter Area/wikiCode missing *** 
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   |texte=   InAs Nanowires Grown by Metal-Organic Vapor-Phase Epitaxy (MOVPE) Employing PS/PMMA Diblock Copolymer Nanopatterning
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InAs Nanowires Grown by Metal-Organic Vapor-Phase Epitaxy (MOVPE) Employing PS/PMMA Diblock Copolymer Nanopatterning

InAs Nanowires Grown by Metal-Organic Vapor-Phase Epitaxy (MOVPE) Employing PS/PMMA Diblock Copolymer Nanopatterning

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