Indium doping induced modification of the structural, optical and electrical properties of nanocrystalline CdSe thin films
Identifieur interne : 000A78 ( Main/Repository ); précédent : 000A77; suivant : 000A79Indium doping induced modification of the structural, optical and electrical properties of nanocrystalline CdSe thin films
Auteurs : RBID : Pascal:13-0185263Descripteurs français
- Pascal (Inist)
- Dopage, Addition indium, Bande interdite, Evaporation sous vide, Spectrométrie dispersive, Concentration impureté, Diffraction RX, Spectre absorption, Photoluminescence, Phénomène transport, Cristallinité, Mobilité porteur charge, Nanocristal, Séléniure de cadmium, Couche mince, Réseau hexagonal, CdSe.
- Wicri :
- concept : Dopage.
English descriptors
- KwdEn :
Abstract
Nanocrystalline thin films of CdSe:ln 1% and CdSe:In 5% are prepared by thermal evaporation using the Inert Gas Condensation method. The effects of different doping concentrations of In have been investigated. X-ray diffraction, optical absorption, Photoluminescence (PL) and electrical techniques are used to characterize the films. X-ray diffraction measurements indicate that the nc-CdSe:In 1% and nc-CdSe:In 5% thin films possess hexagonal structure. The crystallinity of the films and the grain size decreases as the In doping concentration increases. The results of PL measurements indicate that the PL intensity decreases as the In doping concentration increases. The optical band gap values increase as the In doping concentration increases. The dc electrical conductivity increases from undoped nc-CdSe to nc-CdSe:In 1% and decreases for nc-CdSe: In 5%. The density of the states near Fermi level N(EF), degree of disorder (To), hopping distance (R) and hopping energy (W) near the Fermi level are calculated using dc conductivity measurements at low temperatures. The effect of In doping concentration on these parameters is discussed. Hall measurements are performed on nc-CdSe, nc-CdSe:In 1% and nc-CdSe:In 5% to calculate the carrier concentration, carrier type and mobility of charge carriers.
Links toward previous steps (curation, corpus...)
- to stream Main, to step Corpus: 000D69
Links to Exploration step
Pascal:13-0185263Le document en format XML
<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Indium doping induced modification of the structural, optical and electrical properties of nanocrystalline CdSe thin films</title><author><name sortKey="Sharma, Kriti" uniqKey="Sharma K">Kriti Sharma</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Centre of Advanced Study in Physics, Department of Physics, Panjab University</s1><s2>Chandigarh 160 014</s2><s3>IND</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Inde</country><wicri:noRegion>Chandigarh 160 014</wicri:noRegion></affiliation></author><author><name sortKey="Al Kabbi, Alaa S" uniqKey="Al Kabbi A">Alaa S. Al-Kabbi</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Centre of Advanced Study in Physics, Department of Physics, Panjab University</s1><s2>Chandigarh 160 014</s2><s3>IND</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Inde</country><wicri:noRegion>Chandigarh 160 014</wicri:noRegion></affiliation></author><author><name sortKey="Saini, G S S" uniqKey="Saini G">G. S. S. Saini</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Centre of Advanced Study in Physics, Department of Physics, Panjab University</s1><s2>Chandigarh 160 014</s2><s3>IND</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Inde</country><wicri:noRegion>Chandigarh 160 014</wicri:noRegion></affiliation></author><author><name sortKey="Tripathi, S K" uniqKey="Tripathi S">S. K. Tripathi</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Centre of Advanced Study in Physics, Department of Physics, Panjab University</s1><s2>Chandigarh 160 014</s2><s3>IND</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Inde</country><wicri:noRegion>Chandigarh 160 014</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">13-0185263</idno><date when="2013">2013</date><idno type="stanalyst">PASCAL 13-0185263 INIST</idno><idno type="RBID">Pascal:13-0185263</idno><idno type="wicri:Area/Main/Corpus">000D69</idno><idno type="wicri:Area/Main/Repository">000A78</idno></publicationStmt><seriesStmt><idno type="ISSN">0925-8388</idno><title level="j" type="abbreviated">J. alloys compd.</title><title level="j" type="main">Journal of alloys and compounds</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Absorption spectra</term><term>Cadmium selenides</term><term>Carrier mobility</term><term>Crystallinity</term><term>Dispersive spectrometry</term><term>Doping</term><term>Energy gap</term><term>Hexagonal lattices</term><term>Impurity density</term><term>Indium additions</term><term>Nanocrystal</term><term>Photoluminescence</term><term>Thin films</term><term>Transport processes</term><term>Vacuum evaporation</term><term>XRD</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Dopage</term><term>Addition indium</term><term>Bande interdite</term><term>Evaporation sous vide</term><term>Spectrométrie dispersive</term><term>Concentration impureté</term><term>Diffraction RX</term><term>Spectre absorption</term><term>Photoluminescence</term><term>Phénomène transport</term><term>Cristallinité</term><term>Mobilité porteur charge</term><term>Nanocristal</term><term>Séléniure de cadmium</term><term>Couche mince</term><term>Réseau hexagonal</term><term>CdSe</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Dopage</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Nanocrystalline thin films of CdSe:ln 1% and CdSe:In 5% are prepared by thermal evaporation using the Inert Gas Condensation method. The effects of different doping concentrations of In have been investigated. X-ray diffraction, optical absorption, Photoluminescence (PL) and electrical techniques are used to characterize the films. X-ray diffraction measurements indicate that the nc-CdSe:In 1% and nc-CdSe:In 5% thin films possess hexagonal structure. The crystallinity of the films and the grain size decreases as the In doping concentration increases. The results of PL measurements indicate that the PL intensity decreases as the In doping concentration increases. The optical band gap values increase as the In doping concentration increases. The dc electrical conductivity increases from undoped nc-CdSe to nc-CdSe:In 1% and decreases for nc-CdSe: In 5%. The density of the states near Fermi level N(E<sub>F</sub>), degree of disorder (T<sub>o</sub>), hopping distance (R) and hopping energy (W) near the Fermi level are calculated using dc conductivity measurements at low temperatures. The effect of In doping concentration on these parameters is discussed. Hall measurements are performed on nc-CdSe, nc-CdSe:In 1% and nc-CdSe:In 5% to calculate the carrier concentration, carrier type and mobility of charge carriers.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0925-8388</s0></fA01><fA03 i2="1"><s0>J. alloys compd.</s0></fA03><fA05><s2>564</s2></fA05><fA08 i1="01" i2="1" l="ENG"><s1>Indium doping induced modification of the structural, optical and electrical properties of nanocrystalline CdSe thin films</s1></fA08><fA11 i1="01" i2="1"><s1>SHARMA (Kriti)</s1></fA11><fA11 i1="02" i2="1"><s1>AL-KABBI (Alaa S.)</s1></fA11><fA11 i1="03" i2="1"><s1>SAINI (G. S. S.)</s1></fA11><fA11 i1="04" i2="1"><s1>TRIPATHI (S. K.)</s1></fA11><fA14 i1="01"><s1>Centre of Advanced Study in Physics, Department of Physics, Panjab University</s1><s2>Chandigarh 160 014</s2><s3>IND</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA20><s1>42-48</s1></fA20><fA21><s1>2013</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>1151</s2><s5>354000500692450070</s5></fA43><fA44><s0>0000</s0><s1>© 2013 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>31 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>13-0185263</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of alloys and compounds</s0></fA64><fA66 i1="01"><s0>GBR</s0></fA66><fC01 i1="01" l="ENG"><s0>Nanocrystalline thin films of CdSe:ln 1% and CdSe:In 5% are prepared by thermal evaporation using the Inert Gas Condensation method. The effects of different doping concentrations of In have been investigated. X-ray diffraction, optical absorption, Photoluminescence (PL) and electrical techniques are used to characterize the films. X-ray diffraction measurements indicate that the nc-CdSe:In 1% and nc-CdSe:In 5% thin films possess hexagonal structure. The crystallinity of the films and the grain size decreases as the In doping concentration increases. The results of PL measurements indicate that the PL intensity decreases as the In doping concentration increases. The optical band gap values increase as the In doping concentration increases. The dc electrical conductivity increases from undoped nc-CdSe to nc-CdSe:In 1% and decreases for nc-CdSe: In 5%. The density of the states near Fermi level N(E<sub>F</sub>), degree of disorder (T<sub>o</sub>), hopping distance (R) and hopping energy (W) near the Fermi level are calculated using dc conductivity measurements at low temperatures. The effect of In doping concentration on these parameters is discussed. Hall measurements are performed on nc-CdSe, nc-CdSe:In 1% and nc-CdSe:In 5% to calculate the carrier concentration, carrier type and mobility of charge carriers.</s0></fC01><fC02 i1="01" i2="3"><s0>001B70H67B</s0></fC02><fC02 i1="02" i2="3"><s0>001B70C63B</s0></fC02><fC03 i1="01" i2="X" l="FRE"><s0>Dopage</s0><s5>02</s5></fC03><fC03 i1="01" i2="X" l="ENG"><s0>Doping</s0><s5>02</s5></fC03><fC03 i1="01" i2="X" l="SPA"><s0>Doping</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Addition indium</s0><s5>03</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Indium additions</s0><s5>03</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Bande interdite</s0><s5>04</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Energy gap</s0><s5>04</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Evaporation sous vide</s0><s5>05</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Vacuum evaporation</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="FRE"><s0>Spectrométrie dispersive</s0><s5>06</s5></fC03><fC03 i1="05" i2="X" l="ENG"><s0>Dispersive spectrometry</s0><s5>06</s5></fC03><fC03 i1="05" i2="X" l="SPA"><s0>Espectrometría dispersiva</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="FRE"><s0>Concentration impureté</s0><s5>07</s5></fC03><fC03 i1="06" i2="X" l="ENG"><s0>Impurity density</s0><s5>07</s5></fC03><fC03 i1="06" i2="X" l="SPA"><s0>Concentración impureza</s0><s5>07</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Diffraction RX</s0><s5>08</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>XRD</s0><s5>08</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Spectre absorption</s0><s5>09</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Absorption spectra</s0><s5>09</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Photoluminescence</s0><s5>10</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Photoluminescence</s0><s5>10</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Phénomène transport</s0><s5>11</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Transport processes</s0><s5>11</s5></fC03><fC03 i1="11" i2="X" l="FRE"><s0>Cristallinité</s0><s5>12</s5></fC03><fC03 i1="11" i2="X" l="ENG"><s0>Crystallinity</s0><s5>12</s5></fC03><fC03 i1="11" i2="X" l="SPA"><s0>Cristalinidad</s0><s5>12</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Mobilité porteur charge</s0><s5>13</s5></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Carrier mobility</s0><s5>13</s5></fC03><fC03 i1="13" i2="X" l="FRE"><s0>Nanocristal</s0><s5>15</s5></fC03><fC03 i1="13" i2="X" l="ENG"><s0>Nanocrystal</s0><s5>15</s5></fC03><fC03 i1="13" i2="X" l="SPA"><s0>Nanocristal</s0><s5>15</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Séléniure de cadmium</s0><s2>NK</s2><s5>16</s5></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Cadmium selenides</s0><s2>NK</s2><s5>16</s5></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Couche mince</s0><s5>17</s5></fC03><fC03 i1="15" i2="3" l="ENG"><s0>Thin films</s0><s5>17</s5></fC03><fC03 i1="16" i2="3" l="FRE"><s0>Réseau hexagonal</s0><s5>18</s5></fC03><fC03 i1="16" i2="3" l="ENG"><s0>Hexagonal lattices</s0><s5>18</s5></fC03><fC03 i1="17" i2="3" l="FRE"><s0>CdSe</s0><s4>INC</s4><s5>53</s5></fC03><fN21><s1>168</s1></fN21></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
EXPLOR_STEP=IndiumV3/Data/Main/Repository
HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 000A78 | SxmlIndent | more
Ou
HfdSelect -h $EXPLOR_AREA/Data/Main/Repository/biblio.hfd -nk 000A78 | SxmlIndent | more
Pour mettre un lien sur cette page dans le réseau Wicri
{{Explor lien
|wiki= *** parameter Area/wikiCode missing ***
|area= IndiumV3
|flux= Main
|étape= Repository
|type= RBID
|clé= Pascal:13-0185263
|texte= Indium doping induced modification of the structural, optical and electrical properties of nanocrystalline CdSe thin films
}}
| This area was generated with Dilib version V0.5.77. |  |