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Influence of sputtering parameters on the electrical property of indium tin oxide film used for microwave absorbing

Identifieur interne : 000A38 ( Main/Repository ); précédent : 000A37; suivant : 000A39

Influence of sputtering parameters on the electrical property of indium tin oxide film used for microwave absorbing

Auteurs : RBID : Pascal:13-0349069

Descripteurs français

Pascal (Inist)
- Dépôt pulvérisation, Pulvérisation irradiation, Propriété électrique, Oxyde d'indium, Oxyde d'étain, Couche mince, Hyperfréquence, Pulvérisation cathodique, Dépôt physique phase vapeur, Coefficient absorption, Facteur transmission, Substrat verre, 8115C.

English descriptors

KwdEn :
- Absorption coefficients, Cathode sputtering, Electrical properties, Indium oxide, Microwave radiation, Physical vapor deposition, Sputter deposition, Sputtering, Thin films, Tin oxide, Transmittance.

Abstract

The indium tin oxide films used for microwave absorbing were prepared on unheated glass substrate by DC magnetron sputtering system. In order to control the square resistance of ITO films effectively, the influence of sputtering power, time and oxygen flux on the property of ITO films was investigated. The results showed that changing the sputtering power and time can regulate the square resistance of films on a small scale and the square resistance will increase continuously to a large value with the increasing oxygen flux. The sputtering parameters provide ITO thin films with good transmittance (70-90% in 350-800 nm spectra) and wide-ranged square resistance (from 20Ω/□ to 4800Ω/□).

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Pascal:13-0349069

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Influence of sputtering parameters on the electrical property of indium tin oxide film used for microwave absorbing</title>
<author><name>YI YE</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>The Key Laboratory of Inorganic Coating Materials, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road</s1>
<s2>Shanghai 200050</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<wicri:noRegion>Shanghai 200050</wicri:noRegion>
</affiliation>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>University of Chinese Academy of Sciences, 19 Yuquan Road</s1>
<s2>Beijing 100049</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<placeName><settlement type="city">Pékin</settlement>
</placeName>
</affiliation>
</author>
<author><name>LIXIN SONG</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>The Key Laboratory of Inorganic Coating Materials, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road</s1>
<s2>Shanghai 200050</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
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<country>République populaire de Chine</country>
<wicri:noRegion>Shanghai 200050</wicri:noRegion>
</affiliation>
</author>
<author><name>XIANGLIAN SONG</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>The Key Laboratory of Inorganic Coating Materials, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road</s1>
<s2>Shanghai 200050</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<wicri:noRegion>Shanghai 200050</wicri:noRegion>
</affiliation>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>University of Chinese Academy of Sciences, 19 Yuquan Road</s1>
<s2>Beijing 100049</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<placeName><settlement type="city">Pékin</settlement>
</placeName>
</affiliation>
</author>
<author><name>TAO ZHANG</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>The Key Laboratory of Inorganic Coating Materials, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road</s1>
<s2>Shanghai 200050</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<wicri:noRegion>Shanghai 200050</wicri:noRegion>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">13-0349069</idno>
<date when="2013">2013</date>
<idno type="stanalyst">PASCAL 13-0349069 INIST</idno>
<idno type="RBID">Pascal:13-0349069</idno>
<idno type="wicri:Area/Main/Corpus">000549</idno>
<idno type="wicri:Area/Main/Repository">000A38</idno>
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<seriesStmt><idno type="ISSN">0925-8388</idno>
<title level="j" type="abbreviated">J. alloys compd.</title>
<title level="j" type="main">Journal of alloys and compounds</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Absorption coefficients</term>
<term>Cathode sputtering</term>
<term>Electrical properties</term>
<term>Indium oxide</term>
<term>Microwave radiation</term>
<term>Physical vapor deposition</term>
<term>Sputter deposition</term>
<term>Sputtering</term>
<term>Thin films</term>
<term>Tin oxide</term>
<term>Transmittance</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Dépôt pulvérisation</term>
<term>Pulvérisation irradiation</term>
<term>Propriété électrique</term>
<term>Oxyde d'indium</term>
<term>Oxyde d'étain</term>
<term>Couche mince</term>
<term>Hyperfréquence</term>
<term>Pulvérisation cathodique</term>
<term>Dépôt physique phase vapeur</term>
<term>Coefficient absorption</term>
<term>Facteur transmission</term>
<term>Substrat verre</term>
<term>8115C</term>
</keywords>
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<front><div type="abstract" xml:lang="en">The indium tin oxide films used for microwave absorbing were prepared on unheated glass substrate by DC magnetron sputtering system. In order to control the square resistance of ITO films effectively, the influence of sputtering power, time and oxygen flux on the property of ITO films was investigated. The results showed that changing the sputtering power and time can regulate the square resistance of films on a small scale and the square resistance will increase continuously to a large value with the increasing oxygen flux. The sputtering parameters provide ITO thin films with good transmittance (70-90% in 350-800 nm spectra) and wide-ranged square resistance (from 20Ω/□ to 4800Ω/□).</div>
</front>
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<fA05><s2>581</s2>
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<fA08 i1="01" i2="1" l="ENG"><s1>Influence of sputtering parameters on the electrical property of indium tin oxide film used for microwave absorbing</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>YI YE</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>LIXIN SONG</s1>
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<fA11 i1="03" i2="1"><s1>XIANGLIAN SONG</s1>
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<fA11 i1="04" i2="1"><s1>TAO ZHANG</s1>
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<fA14 i1="01"><s1>The Key Laboratory of Inorganic Coating Materials, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road</s1>
<s2>Shanghai 200050</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>University of Chinese Academy of Sciences, 19 Yuquan Road</s1>
<s2>Beijing 100049</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>3 aut.</sZ>
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<fA20><s1>133-138</s1>
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<fA21><s1>2013</s1>
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<fA23 i1="01"><s0>ENG</s0>
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<s2>1151</s2>
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<fC01 i1="01" l="ENG"><s0>The indium tin oxide films used for microwave absorbing were prepared on unheated glass substrate by DC magnetron sputtering system. In order to control the square resistance of ITO films effectively, the influence of sputtering power, time and oxygen flux on the property of ITO films was investigated. The results showed that changing the sputtering power and time can regulate the square resistance of films on a small scale and the square resistance will increase continuously to a large value with the increasing oxygen flux. The sputtering parameters provide ITO thin films with good transmittance (70-90% in 350-800 nm spectra) and wide-ranged square resistance (from 20Ω/□ to 4800Ω/□).</s0>
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<s5>01</s5>
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<s5>02</s5>
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<s5>03</s5>
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<s5>04</s5>
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<s5>05</s5>
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<s5>05</s5>
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<fC03 i1="05" i2="X" l="SPA"><s0>Estaño óxido</s0>
<s5>05</s5>
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<s5>06</s5>
</fC03>
<fC03 i1="06" i2="3" l="ENG"><s0>Thin films</s0>
<s5>06</s5>
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<s5>07</s5>
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<s5>07</s5>
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<s5>08</s5>
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<s5>08</s5>
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<s5>09</s5>
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<s5>09</s5>
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<s5>10</s5>
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<fC03 i1="10" i2="3" l="ENG"><s0>Absorption coefficients</s0>
<s5>10</s5>
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<fC03 i1="11" i2="X" l="FRE"><s0>Facteur transmission</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="X" l="ENG"><s0>Transmittance</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="X" l="SPA"><s0>Factor transmisión</s0>
<s5>11</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>Substrat verre</s0>
<s4>INC</s4>
<s5>46</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>8115C</s0>
<s4>INC</s4>
<s5>71</s5>
</fC03>
<fN21><s1>329</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
</fN44>
<fN82><s1>OTO</s1>
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Influence of sputtering parameters on the electrical property of indium tin oxide film used for microwave absorbing

Influence of sputtering parameters on the electrical property of indium tin oxide film used for microwave absorbing

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

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Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri