IndiumV3, Main, Repository, bibRecord, 000961

Liquid crystal devices incorporating transparent Zn, Sn co-doped In2O3 electrodes prepared by direct inkjet-printing of nanosized particles

Identifieur interne : 000961 ( Main/Repository ); précédent : 000960; suivant : 000962

Liquid crystal devices incorporating transparent Zn, Sn co-doped In2O3 electrodes prepared by direct inkjet-printing of nanosized particles

Auteurs : RBID : Pascal:13-0243828

Descripteurs français

Pascal (Inist)
- Addition étain, Codopage, Gouttelette, Photolithographie, Recuit thermique rapide, Résistivité couche, Cristal liquide, Oxyde d'indium, Nanoparticule, Spectre absorption, Effet électrooptique, In2O3, 8107B, 8107W, 7820C, 7820J.

English descriptors

KwdEn :
- Absorption spectra, Codoping, Droplets, Electro-optical effects, Indium oxide, Liquid crystals, Nanoparticles, Photolithography, Rapid thermal annealing, Sheet resistivity, Tin additions.

Abstract

We demonstrate inkjet-printed transparent Zn, Sn co-doped In₂O₃ (IZTO) films using nanosized IZTO ink as a transparent electrode for liquid crystal (LC) devices. By adjusting the IZTO droplet pitch and line pitch, we can produce directly patterned IZTO electrodes without using a conventional photolithography process. Effective connections between IZTO nanoparticles created by a rapid thermal annealing process resulted in a sheet resistance of ∼200 Ω/square and an optical transmittance of 89.45%, which is acceptable for LC cell fabrication. Stable and reliable electro-optical performance of the twisted nematic LC cells fabricated on the inkjet-printed IZTO films indicates that a directly patterned IZTO film formed by inkjet printing is a promising option for creating printable transparent electrodes for cost-efficient LC cells.

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Pascal:13-0243828

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Liquid crystal devices incorporating transparent Zn, Sn co-doped In<sub>2</sub>
O<sub>3</sub>
 electrodes prepared by direct inkjet-printing of nanosized particles</title>
<author><name sortKey="Park, Kyung Won" uniqKey="Park K">Kyung-Won Park</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, 1 Seocheon-dong</s1>
<s2>Yongin-si, Gyeonggi-do 446-701</s2>
<s3>KOR</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>8 aut.</sZ>
</inist:fA14>
<country>Corée du Sud</country>
<wicri:noRegion>Yongin-si, Gyeonggi-do 446-701</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Kang, Sin Bi" uniqKey="Kang S">Sin-Bi Kang</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, 1 Seocheon-dong</s1>
<s2>Yongin-si, Gyeonggi-do 446-701</s2>
<s3>KOR</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
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<country>Corée du Sud</country>
<wicri:noRegion>Yongin-si, Gyeonggi-do 446-701</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Jeong, Jin A" uniqKey="Jeong J">Jin-A Jeong</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, 1 Seocheon-dong</s1>
<s2>Yongin-si, Gyeonggi-do 446-701</s2>
<s3>KOR</s3>
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<country>Corée du Sud</country>
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</author>
<author><name sortKey="Choi, Suk Won" uniqKey="Choi S">Suk-Won Choi</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, 1 Seocheon-dong</s1>
<s2>Yongin-si, Gyeonggi-do 446-701</s2>
<s3>KOR</s3>
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<country>Corée du Sud</country>
<wicri:noRegion>Yongin-si, Gyeonggi-do 446-701</wicri:noRegion>
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</author>
<author><name sortKey="Kim, Jihoon" uniqKey="Kim J">Jihoon Kim</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Division of Advanced Materials Engineering, Kongju National University, Budaedong</s1>
<s2>Cheonan, Chungchungnam-do 331-717</s2>
<s3>KOR</s3>
<sZ>5 aut.</sZ>
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<country>Corée du Sud</country>
<wicri:noRegion>Cheonan, Chungchungnam-do 331-717</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="You, In Kyu" uniqKey="You I">In-Kyu You</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Energy Application Technology Research Team, Green Devices and Materials Research Laboratory, Electronics and Telecommunications Research Institute (ETRI), 138 Gajeong</s1>
<s2>Yuseong, Daejeon 305-700</s2>
<s3>KOR</s3>
<sZ>6 aut.</sZ>
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</inist:fA14>
<country>Corée du Sud</country>
<wicri:noRegion>Yuseong, Daejeon 305-700</wicri:noRegion>
</affiliation>
</author>
<author><name>YONG SUK YANG</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Energy Application Technology Research Team, Green Devices and Materials Research Laboratory, Electronics and Telecommunications Research Institute (ETRI), 138 Gajeong</s1>
<s2>Yuseong, Daejeon 305-700</s2>
<s3>KOR</s3>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
</inist:fA14>
<country>Corée du Sud</country>
<wicri:noRegion>Yuseong, Daejeon 305-700</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Kim, Han Ki" uniqKey="Kim H">Han-Ki Kim</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, 1 Seocheon-dong</s1>
<s2>Yongin-si, Gyeonggi-do 446-701</s2>
<s3>KOR</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
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<country>Corée du Sud</country>
<wicri:noRegion>Yongin-si, Gyeonggi-do 446-701</wicri:noRegion>
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<title level="j" type="abbreviated">J. phys., D. Appl. phys. : (Print)</title>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Absorption spectra</term>
<term>Codoping</term>
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<term>Indium oxide</term>
<term>Liquid crystals</term>
<term>Nanoparticles</term>
<term>Photolithography</term>
<term>Rapid thermal annealing</term>
<term>Sheet resistivity</term>
<term>Tin additions</term>
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<keywords scheme="Pascal" xml:lang="fr"><term>Addition étain</term>
<term>Codopage</term>
<term>Gouttelette</term>
<term>Photolithographie</term>
<term>Recuit thermique rapide</term>
<term>Résistivité couche</term>
<term>Cristal liquide</term>
<term>Oxyde d'indium</term>
<term>Nanoparticule</term>
<term>Spectre absorption</term>
<term>Effet électrooptique</term>
<term>In2O3</term>
<term>8107B</term>
<term>8107W</term>
<term>7820C</term>
<term>7820J</term>
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<front><div type="abstract" xml:lang="en">We demonstrate inkjet-printed transparent Zn, Sn co-doped In<sub>2</sub>
O<sub>3</sub>
 (IZTO) films using nanosized IZTO ink as a transparent electrode for liquid crystal (LC) devices. By adjusting the IZTO droplet pitch and line pitch, we can produce directly patterned IZTO electrodes without using a conventional photolithography process. Effective connections between IZTO nanoparticles created by a rapid thermal annealing process resulted in a sheet resistance of ∼200 Ω/square and an optical transmittance of 89.45%, which is acceptable for LC cell fabrication. Stable and reliable electro-optical performance of the twisted nematic LC cells fabricated on the inkjet-printed IZTO films indicates that a directly patterned IZTO film formed by inkjet printing is a promising option for creating printable transparent electrodes for cost-efficient LC cells.</div>
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 electrodes prepared by direct inkjet-printing of nanosized particles</s1>
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<sZ>1 aut.</sZ>
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<sZ>5 aut.</sZ>
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<fA14 i1="03"><s1>Energy Application Technology Research Team, Green Devices and Materials Research Laboratory, Electronics and Telecommunications Research Institute (ETRI), 138 Gajeong</s1>
<s2>Yuseong, Daejeon 305-700</s2>
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<fC01 i1="01" l="ENG"><s0>We demonstrate inkjet-printed transparent Zn, Sn co-doped In<sub>2</sub>
O<sub>3</sub>
 (IZTO) films using nanosized IZTO ink as a transparent electrode for liquid crystal (LC) devices. By adjusting the IZTO droplet pitch and line pitch, we can produce directly patterned IZTO electrodes without using a conventional photolithography process. Effective connections between IZTO nanoparticles created by a rapid thermal annealing process resulted in a sheet resistance of ∼200 Ω/square and an optical transmittance of 89.45%, which is acceptable for LC cell fabrication. Stable and reliable electro-optical performance of the twisted nematic LC cells fabricated on the inkjet-printed IZTO films indicates that a directly patterned IZTO film formed by inkjet printing is a promising option for creating printable transparent electrodes for cost-efficient LC cells.</s0>
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Liquid crystal devices incorporating transparent Zn, Sn co-doped In2O3 electrodes prepared by direct inkjet-printing of nanosized particles

Liquid crystal devices incorporating transparent Zn, Sn co-doped In2O3 electrodes prepared by direct inkjet-printing of nanosized particles

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri