Mechanical niobium doping in barium titanate electroceramics
Identifieur interne : 000919 ( Main/Repository ); précédent : 000918; suivant : 000920Mechanical niobium doping in barium titanate electroceramics
Auteurs : RBID : Pascal:13-0349050Descripteurs français
- Pascal (Inist)
- Niobium, Addition indium, Titanate, Centre donneur, Dopage, Ferroélectrique, Energie activation, Activation thermique, Haute température, Coefficient diffusion, Alliage mécanique, Broyeur satellite, Métallurgie poudre, Maille cristalline, Céramique électronique, Semiconducteur, Effet concentration, Propriété électrique, Conductivité électrique, Concentration impureté, Compensation charge, Electron libre, Densité lacune, BaTiO3, Nb2O5, 7784, 8120E, 8120.
- Wicri :
- concept : Dopage.
English descriptors
- KwdEn :
- Activation energy, Charge compensation, Concentration effect, Diffusion coefficient, Donor center, Doping, Electrical conductivity, Electrical properties, Electroceramics, Ferroelectric materials, Free electron, High temperature, Impurity density, Indium addition, Mechanical alloying, Niobium, Planetary mill, Powder metallurgy, Semiconductor materials, Thermal activation, Titanates, Unit cell, Vacancy density.
Abstract
Niobium is a well-established donor dopant for semi-conducting BaTiO3 ceramics. The conventional procedure to dissolve Nb into BaTiO3 relies on thermal activation at high temperatures (up to 1500 °C) and even then, large dwell times are necessary due to the small diffusion coefficients of Nb5+. In this work, we demonstrate a new doping procedure by Mechanical Alloying (MA), which has already proven its potential for the fabrication of conductive electroceramics. In a planetary mill, powders of BaTiO3 and Nb2O5 were mixed for up to 540 min. The BaTiO3 unit cell volume increases with increasing Nb concentration. The electrical properties of conventional and mechanical alloyed samples as a function of Nb concentration are similar, however the mechanically alloyed samples shows a large conductivity that we attribute to a better homogeneity in the structure of MA-processed samples. For small dopant concentrations, charge compensation of the pentavalent Nb is primarily attributed to free electrons. At higher Nb concentrations cation vacancies prevail as compensation mechanism.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Mechanical niobium doping in barium titanate electroceramics</title><author><name sortKey="Velasco Davalos, I A" uniqKey="Velasco Davalos I">I. A. Velasco-Davalos</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Departmento de Ingeniería Metalúrgica, Instituto Politécnico Nacional</s1><s2>Zacatenco, 07338 México D.F.</s2><s3>MEX</s3><sZ>1 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Mexique</country><wicri:noRegion>Zacatenco, 07338 México D.F.</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>INRS-EMT, 1650 Boul. Lionel-Boulet</s1><s2>Varennes J3X 1S2</s2><s3>CAN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country>Canada</country><wicri:noRegion>Varennes J3X 1S2</wicri:noRegion></affiliation></author><author><name sortKey="Ruediger, A" uniqKey="Ruediger A">A. Ruediger</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>INRS-EMT, 1650 Boul. Lionel-Boulet</s1><s2>Varennes J3X 1S2</s2><s3>CAN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country>Canada</country><wicri:noRegion>Varennes J3X 1S2</wicri:noRegion></affiliation></author><author><name sortKey="Cruz Rivera, J J" uniqKey="Cruz Rivera J">J. J. Cruz-Rivera</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Universidad Autónoma de San Luis Potosí, Av. Sierra Leona 550</s1><s2>Lomas, 78210 S.L.P.</s2><s3>MEX</s3><sZ>3 aut.</sZ></inist:fA14><country>Mexique</country><wicri:noRegion>Lomas, 78210 S.L.P.</wicri:noRegion></affiliation></author><author><name sortKey="Gomez Yanez, C" uniqKey="Gomez Yanez C">C. Gomez-Yanez</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Departmento de Ingeniería Metalúrgica, Instituto Politécnico Nacional</s1><s2>Zacatenco, 07338 México D.F.</s2><s3>MEX</s3><sZ>1 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Mexique</country><wicri:noRegion>Zacatenco, 07338 México D.F.</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">13-0349050</idno><date when="2013">2013</date><idno type="stanalyst">PASCAL 13-0349050 INIST</idno><idno type="RBID">Pascal:13-0349050</idno><idno type="wicri:Area/Main/Corpus">000551</idno><idno type="wicri:Area/Main/Repository">000919</idno></publicationStmt><seriesStmt><idno type="ISSN">0925-8388</idno><title level="j" type="abbreviated">J. alloys compd.</title><title level="j" type="main">Journal of alloys and compounds</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Activation energy</term><term>Charge compensation</term><term>Concentration effect</term><term>Diffusion coefficient</term><term>Donor center</term><term>Doping</term><term>Electrical conductivity</term><term>Electrical properties</term><term>Electroceramics</term><term>Ferroelectric materials</term><term>Free electron</term><term>High temperature</term><term>Impurity density</term><term>Indium addition</term><term>Mechanical alloying</term><term>Niobium</term><term>Planetary mill</term><term>Powder metallurgy</term><term>Semiconductor materials</term><term>Thermal activation</term><term>Titanates</term><term>Unit cell</term><term>Vacancy density</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Niobium</term><term>Addition indium</term><term>Titanate</term><term>Centre donneur</term><term>Dopage</term><term>Ferroélectrique</term><term>Energie activation</term><term>Activation thermique</term><term>Haute température</term><term>Coefficient diffusion</term><term>Alliage mécanique</term><term>Broyeur satellite</term><term>Métallurgie poudre</term><term>Maille cristalline</term><term>Céramique électronique</term><term>Semiconducteur</term><term>Effet concentration</term><term>Propriété électrique</term><term>Conductivité électrique</term><term>Concentration impureté</term><term>Compensation charge</term><term>Electron libre</term><term>Densité lacune</term><term>BaTiO3</term><term>Nb2O5</term><term>7784</term><term>8120E</term><term>8120</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Dopage</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Niobium is a well-established donor dopant for semi-conducting BaTiO<sub>3</sub> ceramics. The conventional procedure to dissolve Nb into BaTiO<sub>3</sub> relies on thermal activation at high temperatures (up to 1500 °C) and even then, large dwell times are necessary due to the small diffusion coefficients of Nb<sup>5+</sup>. In this work, we demonstrate a new doping procedure by Mechanical Alloying (MA), which has already proven its potential for the fabrication of conductive electroceramics. In a planetary mill, powders of BaTiO<sub>3</sub> and Nb<sub>2</sub>O<sub>5</sub> were mixed for up to 540 min. The BaTiO<sub>3</sub> unit cell volume increases with increasing Nb concentration. The electrical properties of conventional and mechanical alloyed samples as a function of Nb concentration are similar, however the mechanically alloyed samples shows a large conductivity that we attribute to a better homogeneity in the structure of MA-processed samples. For small dopant concentrations, charge compensation of the pentavalent Nb is primarily attributed to free electrons. At higher Nb concentrations cation vacancies prevail as compensation mechanism.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0925-8388</s0></fA01><fA03 i2="1"><s0>J. alloys compd.</s0></fA03><fA05><s2>581</s2></fA05><fA08 i1="01" i2="1" l="ENG"><s1>Mechanical niobium doping in barium titanate electroceramics</s1></fA08><fA11 i1="01" i2="1"><s1>VELASCO-DAVALOS (I. A.)</s1></fA11><fA11 i1="02" i2="1"><s1>RUEDIGER (A.)</s1></fA11><fA11 i1="03" i2="1"><s1>CRUZ-RIVERA (J. J.)</s1></fA11><fA11 i1="04" i2="1"><s1>GOMEZ-YANEZ (C.)</s1></fA11><fA14 i1="01"><s1>Departmento de Ingeniería Metalúrgica, Instituto Politécnico Nacional</s1><s2>Zacatenco, 07338 México D.F.</s2><s3>MEX</s3><sZ>1 aut.</sZ><sZ>4 aut.</sZ></fA14><fA14 i1="02"><s1>INRS-EMT, 1650 Boul. Lionel-Boulet</s1><s2>Varennes J3X 1S2</s2><s3>CAN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></fA14><fA14 i1="03"><s1>Universidad Autónoma de San Luis Potosí, Av. Sierra Leona 550</s1><s2>Lomas, 78210 S.L.P.</s2><s3>MEX</s3><sZ>3 aut.</sZ></fA14><fA20><s1>56-58</s1></fA20><fA21><s1>2013</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>1151</s2><s5>354000501580060110</s5></fA43><fA44><s0>0000</s0><s1>© 2013 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>13 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>13-0349050</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of alloys and compounds</s0></fA64><fA66 i1="01"><s0>GBR</s0></fA66><fC01 i1="01" l="ENG"><s0>Niobium is a well-established donor dopant for semi-conducting BaTiO<sub>3</sub> ceramics. The conventional procedure to dissolve Nb into BaTiO<sub>3</sub> relies on thermal activation at high temperatures (up to 1500 °C) and even then, large dwell times are necessary due to the small diffusion coefficients of Nb<sup>5+</sup>. In this work, we demonstrate a new doping procedure by Mechanical Alloying (MA), which has already proven its potential for the fabrication of conductive electroceramics. In a planetary mill, powders of BaTiO<sub>3</sub> and Nb<sub>2</sub>O<sub>5</sub> were mixed for up to 540 min. The BaTiO<sub>3</sub> unit cell volume increases with increasing Nb concentration. The electrical properties of conventional and mechanical alloyed samples as a function of Nb concentration are similar, however the mechanically alloyed samples shows a large conductivity that we attribute to a better homogeneity in the structure of MA-processed samples. For small dopant concentrations, charge compensation of the pentavalent Nb is primarily attributed to free electrons. 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