Optical and Magnetic Properties of Ten-Period InGaMnAs/GaAs Quantum Wells
Identifieur interne : 000802 ( Main/Repository ); précédent : 000801; suivant : 000803Optical and Magnetic Properties of Ten-Period InGaMnAs/GaAs Quantum Wells
Auteurs : RBID : Pascal:14-0008358Descripteurs français
- Pascal (Inist)
- Propriété magnétique, Conductivité électrique, Epitaxie jet moléculaire, Ferromagnétisme, Point Curie, Interaction échange, Semiconducteur III-V, Composé ternaire, Gallium Arséniure, Indium Arséniure, Arséniure de gallium, Puits quantique, Matériau ferromagnétique, Gallium, Luminescence, Energie activation, Confinement quantique, Arséniure d'indium, Impureté substitutionnelle, As Ga, As Ga In, GaAs, Substrat GaAs, 7530E, InGaAs.
English descriptors
- KwdEn :
- Activation energy, Curie point, Electrical conductivity, Exchange interactions, Ferromagnetic materials, Ferromagnetism, Gallium, Gallium Arsenides, Gallium arsenides, III-V semiconductors, Indium Arsenides, Indium arsenides, Luminescence, Magnetic properties, Molecular beam epitaxy, Quantum confinement, Quantum wells, Substitutional impurities, Ternary compounds.
Abstract
Ten layers of InGaMnAs/GaAs multiquantum wells (MQWs) structure were grown on high resistivity (100) p-type GaAs substrates by molecular beam epitaxy (MBE). A presence of the ferromagnetic structure was confirmed in the InGaMnAs/GaAs MQWs structure, and have ferromagnetic ordering with a Curie temperature, TC = 50 K. It is likely that the ferromagnetic exchange coupling of the sample with TC = 50 K is hole-mediated resulting in Mn substituting In or Ga sites. PL emission spectra of the InGaMnAs MQWs sample grown at a temperature of 170 °C show that an activation energy of the Mn ion on the first quantum confinement level in InGaAs QW is 32 meV and impurity Mn is partly ionized. The fact that the activation energy of 32 meV of Mn ion in the QW is lower than an activation energy of 110 meV for a substitutional Mn impurity in GaAs, indicating an impurity band existing in the bandgap due to substitutional Mn ions.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Optical and Magnetic Properties of Ten-Period InGaMnAs/GaAs Quantum Wells</title><author><name>IM TAEK YOON</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Quantum Functional Semiconductor Research Center, Dongguk University</s1><s2>Seoul 100-715</s2><s3>KOR</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Corée du Sud</country><placeName><settlement type="city">Séoul</settlement></placeName></affiliation></author><author><name>SEJOON LEE</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Quantum Functional Semiconductor Research Center, Dongguk University</s1><s2>Seoul 100-715</s2><s3>KOR</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Corée du Sud</country><placeName><settlement type="city">Séoul</settlement></placeName></affiliation></author><author><name>YOON SHON</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Quantum Functional Semiconductor Research Center, Dongguk University</s1><s2>Seoul 100-715</s2><s3>KOR</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Corée du Sud</country><placeName><settlement type="city">Séoul</settlement></placeName></affiliation></author><author><name>YOUNGHAE KWON</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Quantum Functional Semiconductor Research Center, Dongguk University</s1><s2>Seoul 100-715</s2><s3>KOR</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Corée du Sud</country><placeName><settlement type="city">Séoul</settlement></placeName></affiliation></author><author><name sortKey="Park, Young S" uniqKey="Park Y">Young S. Park</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Center for Superfunctional Materials, Pohang University of Science and Technology, San 31, Hyojadong</s1><s2>Namgu, Pohang 790-784</s2><s3>KOR</s3><sZ>5 aut.</sZ></inist:fA14><country>Corée du Sud</country><wicri:noRegion>Namgu, Pohang 790-784</wicri:noRegion></affiliation></author><author><name>TAE WON KANG</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Quantum Functional Semiconductor Research Center, Dongguk University</s1><s2>Seoul 100-715</s2><s3>KOR</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Corée du Sud</country><placeName><settlement type="city">Séoul</settlement></placeName></affiliation></author></titleStmt><publicationStmt><idno type="inist">14-0008358</idno><date when="2013">2013</date><idno type="stanalyst">PASCAL 14-0008358 INIST</idno><idno type="RBID">Pascal:14-0008358</idno><idno type="wicri:Area/Main/Corpus">000358</idno><idno type="wicri:Area/Main/Repository">000802</idno></publicationStmt><seriesStmt><idno type="ISSN">1557-1939</idno><title level="j" type="abbreviated">J. supercond. nov. magn.</title><title level="j" type="main">Journal of superconductivity and novel magnetism</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Activation energy</term><term>Curie point</term><term>Electrical conductivity</term><term>Exchange interactions</term><term>Ferromagnetic materials</term><term>Ferromagnetism</term><term>Gallium</term><term>Gallium Arsenides</term><term>Gallium arsenides</term><term>III-V semiconductors</term><term>Indium Arsenides</term><term>Indium arsenides</term><term>Luminescence</term><term>Magnetic properties</term><term>Molecular beam epitaxy</term><term>Quantum confinement</term><term>Quantum wells</term><term>Substitutional impurities</term><term>Ternary compounds</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Propriété magnétique</term><term>Conductivité électrique</term><term>Epitaxie jet moléculaire</term><term>Ferromagnétisme</term><term>Point Curie</term><term>Interaction échange</term><term>Semiconducteur III-V</term><term>Composé ternaire</term><term>Gallium Arséniure</term><term>Indium Arséniure</term><term>Arséniure de gallium</term><term>Puits quantique</term><term>Matériau ferromagnétique</term><term>Gallium</term><term>Luminescence</term><term>Energie activation</term><term>Confinement quantique</term><term>Arséniure d'indium</term><term>Impureté substitutionnelle</term><term>As Ga</term><term>As Ga In</term><term>GaAs</term><term>Substrat GaAs</term><term>7530E</term><term>InGaAs</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Ten layers of InGaMnAs/GaAs multiquantum wells (MQWs) structure were grown on high resistivity (100) p-type GaAs substrates by molecular beam epitaxy (MBE). A presence of the ferromagnetic structure was confirmed in the InGaMnAs/GaAs MQWs structure, and have ferromagnetic ordering with a Curie temperature, T<sub>C</sub> = 50 K. It is likely that the ferromagnetic exchange coupling of the sample with T<sub>C</sub> = 50 K is hole-mediated resulting in Mn substituting In or Ga sites. PL emission spectra of the InGaMnAs MQWs sample grown at a temperature of 170 °C show that an activation energy of the Mn ion on the first quantum confinement level in InGaAs QW is 32 meV and impurity Mn is partly ionized. The fact that the activation energy of 32 meV of Mn ion in the QW is lower than an activation energy of 110 meV for a substitutional Mn impurity in GaAs, indicating an impurity band existing in the bandgap due to substitutional Mn ions.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1557-1939</s0></fA01><fA03 i2="1"><s0>J. supercond. nov. magn.</s0></fA03><fA05><s2>26</s2></fA05><fA06><s2>12</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Optical and Magnetic Properties of Ten-Period InGaMnAs/GaAs Quantum Wells</s1></fA08><fA11 i1="01" i2="1"><s1>IM TAEK YOON</s1></fA11><fA11 i1="02" i2="1"><s1>SEJOON LEE</s1></fA11><fA11 i1="03" i2="1"><s1>YOON SHON</s1></fA11><fA11 i1="04" i2="1"><s1>YOUNGHAE KWON</s1></fA11><fA11 i1="05" i2="1"><s1>PARK (Young S.)</s1></fA11><fA11 i1="06" i2="1"><s1>TAE WON KANG</s1></fA11><fA14 i1="01"><s1>Quantum Functional Semiconductor Research Center, Dongguk University</s1><s2>Seoul 100-715</s2><s3>KOR</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>6 aut.</sZ></fA14><fA14 i1="02"><s1>Center for Superfunctional Materials, Pohang University of Science and Technology, San 31, Hyojadong</s1><s2>Namgu, Pohang 790-784</s2><s3>KOR</s3><sZ>5 aut.</sZ></fA14><fA20><s1>3529-3532</s1></fA20><fA21><s1>2013</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>21987</s2><s5>354000501086470260</s5></fA43><fA44><s0>0000</s0><s1>© 2014 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>21 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>14-0008358</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of superconductivity and novel magnetism</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>Ten layers of InGaMnAs/GaAs multiquantum wells (MQWs) structure were grown on high resistivity (100) p-type GaAs substrates by molecular beam epitaxy (MBE). A presence of the ferromagnetic structure was confirmed in the InGaMnAs/GaAs MQWs structure, and have ferromagnetic ordering with a Curie temperature, T<sub>C</sub> = 50 K. It is likely that the ferromagnetic exchange coupling of the sample with T<sub>C</sub> = 50 K is hole-mediated resulting in Mn substituting In or Ga sites. PL emission spectra of the InGaMnAs MQWs sample grown at a temperature of 170 °C show that an activation energy of the Mn ion on the first quantum confinement level in InGaAs QW is 32 meV and impurity Mn is partly ionized. The fact that the activation energy of 32 meV of Mn ion in the QW is lower than an activation energy of 110 meV for a substitutional Mn impurity in GaAs, indicating an impurity band existing in the bandgap due to substitutional Mn ions.</s0></fC01><fC02 i1="01" i2="3"><s0>001B70E50</s0></fC02><fC02 i1="02" i2="3"><s0>001B80A07S</s0></fC02><fC02 i1="03" i2="3"><s0>001B80A15H</s0></fC02><fC02 i1="04" i2="3"><s0>001B70E30E</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Propriété magnétique</s0><s5>41</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Magnetic properties</s0><s5>41</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Conductivité électrique</s0><s5>42</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Electrical conductivity</s0><s5>42</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Epitaxie jet moléculaire</s0><s5>43</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Molecular beam epitaxy</s0><s5>43</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Ferromagnétisme</s0><s5>44</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Ferromagnetism</s0><s5>44</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Point Curie</s0><s5>45</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Curie point</s0><s5>45</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Interaction échange</s0><s5>46</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Exchange interactions</s0><s5>46</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Semiconducteur III-V</s0><s5>50</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>III-V semiconductors</s0><s5>50</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Composé ternaire</s0><s5>51</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Ternary compounds</s0><s5>51</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Gallium Arséniure</s0><s2>NC</s2><s2>NA</s2><s5>52</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Gallium Arsenides</s0><s2>NC</s2><s2>NA</s2><s5>52</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Indium Arséniure</s0><s2>NC</s2><s2>NA</s2><s5>53</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Indium Arsenides</s0><s2>NC</s2><s2>NA</s2><s5>53</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Arséniure de gallium</s0><s2>NK</s2><s5>61</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Gallium arsenides</s0><s2>NK</s2><s5>61</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Puits quantique</s0><s5>62</s5></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Quantum wells</s0><s5>62</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Matériau ferromagnétique</s0><s5>63</s5></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Ferromagnetic materials</s0><s5>63</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Gallium</s0><s2>NC</s2><s5>64</s5></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Gallium</s0><s2>NC</s2><s5>64</s5></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Luminescence</s0><s5>65</s5></fC03><fC03 i1="15" i2="3" l="ENG"><s0>Luminescence</s0><s5>65</s5></fC03><fC03 i1="16" i2="3" l="FRE"><s0>Energie activation</s0><s5>66</s5></fC03><fC03 i1="16" i2="3" l="ENG"><s0>Activation energy</s0><s5>66</s5></fC03><fC03 i1="17" i2="X" l="FRE"><s0>Confinement quantique</s0><s5>67</s5></fC03><fC03 i1="17" i2="X" l="ENG"><s0>Quantum confinement</s0><s5>67</s5></fC03><fC03 i1="17" i2="X" l="SPA"><s0>Confinamiento cuántico</s0><s5>67</s5></fC03><fC03 i1="18" i2="3" l="FRE"><s0>Arséniure d'indium</s0><s2>NK</s2><s5>68</s5></fC03><fC03 i1="18" i2="3" l="ENG"><s0>Indium arsenides</s0><s2>NK</s2><s5>68</s5></fC03><fC03 i1="19" i2="X" l="FRE"><s0>Impureté substitutionnelle</s0><s5>69</s5></fC03><fC03 i1="19" i2="X" l="ENG"><s0>Substitutional impurities</s0><s5>69</s5></fC03><fC03 i1="19" i2="X" l="SPA"><s0>Impureza substitucional</s0><s5>69</s5></fC03><fC03 i1="20" i2="3" l="FRE"><s0>As Ga</s0><s4>INC</s4><s5>75</s5></fC03><fC03 i1="21" i2="3" l="FRE"><s0>As Ga In</s0><s4>INC</s4><s5>76</s5></fC03><fC03 i1="22" i2="3" l="FRE"><s0>GaAs</s0><s4>INC</s4><s5>83</s5></fC03><fC03 i1="23" i2="3" l="FRE"><s0>Substrat GaAs</s0><s4>INC</s4><s5>84</s5></fC03><fC03 i1="24" i2="3" l="FRE"><s0>7530E</s0><s4>INC</s4><s5>85</s5></fC03><fC03 i1="25" i2="3" l="FRE"><s0>InGaAs</s0><s4>INC</s4><s5>86</s5></fC03><fN21><s1>006</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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