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Synthesis of CuInxGa1-xSe2 nanoparticles in organic solvent for thin film solar cells

Identifieur interne : 000401 ( Main/Repository ); précédent : 000400; suivant : 000402

Synthesis of CuInxGa1-xSe2 nanoparticles in organic solvent for thin film solar cells

Auteurs : RBID : Pascal:13-0351721

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English descriptors

Abstract

Chalcopyrite CuIn1-xGaxSe2 (CIGS; x < 0.3) nanoparticles were synthesized by reacting CuCl, InCl3, GaCl3 and Se in oleyl amine over 250 °C. Depending on the reaction temperature and duration, the obtained nanoparticles had sizes of less than 100 nm and different chemical compositions. Because the atomic percentage of Se decreased with increasing reaction time, the proportion of Se and Ga content also changed. Furthermore, the lattice parameters, a and c, changed with increasing reaction temperature and time. Lastly, the bandgap energies of the CIGS films coated on glass plates were ∼ 0.98 eV and did not significantly change with increasing heat-treatment temperature.

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Pascal:13-0351721

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<title xml:lang="en" level="a">Synthesis of CuIn
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Ga
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Se
<sub>2 </sub>
nanoparticles in organic solvent for thin film solar cells</title>
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<name sortKey="Hahn, Jae Sub" uniqKey="Hahn J">Jae-Sub Hahn</name>
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<s1>Department of Nano & Chemical Engineering, Kunsan National University</s1>
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<country>Corée du Sud</country>
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<name sortKey="Lee, Soo Ho" uniqKey="Lee S">Soo-Ho Lee</name>
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<name sortKey="Seo, Moon Soo" uniqKey="Seo M">Moon-Soo Seo</name>
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<name sortKey="Choi, Dae Kyu" uniqKey="Choi D">Dae-Kyu Choi</name>
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<name>JOONGPYO SHIM</name>
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<s1>Department of Nano & Chemical Engineering, Kunsan National University</s1>
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<title level="j" type="abbreviated">Thin solid films</title>
<title level="j" type="main">Thin solid films</title>
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<term>Amines</term>
<term>Chalcopyrite</term>
<term>Chemical composition</term>
<term>Crystal structure</term>
<term>Energy gap</term>
<term>Heat treatments</term>
<term>Indium chloride</term>
<term>Lattice parameters</term>
<term>Nanomaterial synthesis</term>
<term>Nanoparticles</term>
<term>Nanostructured materials</term>
<term>Organic solvents</term>
<term>Temperature dependence</term>
<term>Thin film devices</term>
<term>Thin films</term>
</keywords>
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<term>Nanoparticule</term>
<term>Nanomatériau</term>
<term>Solvant organique</term>
<term>Dispositif couche mince</term>
<term>Chalcopyrite</term>
<term>Synthèse nanomatériau</term>
<term>Chlorure d'indium</term>
<term>Amine</term>
<term>Dépendance température</term>
<term>Composition chimique</term>
<term>Paramètre cristallin</term>
<term>Structure cristalline</term>
<term>Bande interdite</term>
<term>Couche mince</term>
<term>Traitement thermique</term>
<term>CuIn1-xGaxSe2</term>
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<term>InCl3</term>
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<front>
<div type="abstract" xml:lang="en">Chalcopyrite CuIn
<sub>1-x</sub>
Ga
<sub>x</sub>
Se
<sub>2</sub>
(CIGS; x < 0.3) nanoparticles were synthesized by reacting CuCl, InCl
<sub>3</sub>
, GaCl
<sub>3</sub>
and Se in oleyl amine over 250 °C. Depending on the reaction temperature and duration, the obtained nanoparticles had sizes of less than 100 nm and different chemical compositions. Because the atomic percentage of Se decreased with increasing reaction time, the proportion of Se and Ga content also changed. Furthermore, the lattice parameters, a and c, changed with increasing reaction temperature and time. Lastly, the bandgap energies of the CIGS films coated on glass plates were ∼ 0.98 eV and did not significantly change with increasing heat-treatment temperature.</div>
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Se
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nanoparticles in organic solvent for thin film solar cells</s1>
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<s0>Chalcopyrite CuIn
<sub>1-x</sub>
Ga
<sub>x</sub>
Se
<sub>2</sub>
(CIGS; x < 0.3) nanoparticles were synthesized by reacting CuCl, InCl
<sub>3</sub>
, GaCl
<sub>3</sub>
and Se in oleyl amine over 250 °C. Depending on the reaction temperature and duration, the obtained nanoparticles had sizes of less than 100 nm and different chemical compositions. Because the atomic percentage of Se decreased with increasing reaction time, the proportion of Se and Ga content also changed. Furthermore, the lattice parameters, a and c, changed with increasing reaction temperature and time. Lastly, the bandgap energies of the CIGS films coated on glass plates were ∼ 0.98 eV and did not significantly change with increasing heat-treatment temperature.</s0>
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