Strained layer < Strained quantum well < Strained superlattice

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List of bibliographic references

Number of relevant bibliographic references: 69.
[0-20] [0 - 20][0 - 50][20-40]

Ident.	Authors (with country if any)	Title
000042 (2013)		Modeling of Ga1-xInxAs1-y-zNySbz/GaAs quantum well properties for near-infrared lasers
000394 (2009)		Strained InGaAsP multi-quantum-well structures for InP-based wide linewidth and polarization-insensitive semiconductor optical amplifiers
000505 (2008)		Singlemode 1.1 μm InGaAs Quantum Well microstructured Photonic Crystal VCSEL
000536 (2008)		Narrow linewidth and demonstration of saturation spectra of the Cesium at 852nm with high power Al-free DFB laser diodes
000539 (2008)		Microstructured Photonic Crystal for Singlemode Long Wavelength VCSELs
000570 (2008)		High power Al-free DFB laser diode for atomic clocks : narrow linewidth and demonstration of saturation spectra of the Cesium D2 line
000727 (2007)		An indium phosphide-based Near infrared MOEMS Microspectrometer for agri-food and environmental monitoring
000931 (2005)		Modeling of a novel InP-based monolithically integrated magneto-optical waveguide isolator
000B79 (2004)		Band structure calculations for dilute nitride quantum wells under compressive or tensile strain
000C92 (2003)		Structural properties of strained piezoelectric [1 1 1]A-oriented InGaAs/GaAs quantum well structures grown by MOVPE
000E03 (2003)		Anomalous I versus V characteristics of InGaAs/InAlAs strained multiple quantum well structures for amplitude modulators
001191 (2001)		Observation of dislocation generation in highly strained quantum well lasers during operation
001209 (2001)		MBE growth of InAs/InAsSb/InAlAsSb "W" quantum well laser diodes emitting near 3 μm
001275 (2001)		Characterisation and optimisation of MBE grown arsenide/antimonide interfaces
001518 (1999-11)		Réalisation par épitaxie en phase vapeur par la méthode aux hydrures de puits quantiques contraints InAsxP1-x/InP
001622 (1999)		Les super-réseaux de monocouches fractionnaires (InAs)n/(GaAs)0.26 épitaxiés sur InP par EJMSS pour les applications dans la gamme spectrale 2-2.5μm
001669 (1999)		Room-temperature 2.63 μm GaInAsSb/GaSb strained quantum-well laser diodes
001671 (1999)		Room temperature continuous wave operation under optical pumping of a 1.48 μm vertical cavity laser based on AlGaAsSb mirror
001725 (1999)		Highly strained InxGa1-xAs/InP quantum wells grown by solid source MBE for applications in the 2-2.3 μm spectral range
001731 (1999)		GaInSb/AlGaAsSb strained quantum well semiconductor lasers for 1.55 μm operation
001737 (1999)		Epitaxially stacked GaAs/GaAlAs lasers using a low-resistance tunnel junction

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