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Strained quantum well < Strained superlattice < Strains  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 16.
Ident.Authors (with country if any)Title
001622 (1999) Les super-réseaux de monocouches fractionnaires (InAs)n/(GaAs)0.26 épitaxiés sur InP par EJMSS pour les applications dans la gamme spectrale 2-2.5μm
001C94 (1997) Conduction band offset ratio of the (In,Ga)As/GaAs system and (In,Ga)As alloy properties
001F73 (1996) Application of spectrally resolved scanning photoluminescence to assess relaxation processes of InGaAs and InAlAs layers strained in compression and tension
002199 (1995) Critical layer thickness in MOCVD grown InGaAs-GaAs strained quantum wells
002374 (1994) Multiplication of misfit dislocations in InxGa1-xAs/GaAs heterostructures
002439 (1994) Atomic layer epitaxy and characterization of InP and InAs/InP heterostructures
002479 (1993-09) Caractérisation structurale par microscopie électronique en transmission de systèmes à fort désaccord paramétrique GaAs/Si et GaAs/InP
002548 (1993) Strain relaxation induced by interfacial steps of GaAs/In0.2Ga0.8As superlattices
002685 (1993) Electronic structure and optical properties of (Ga, In)As-(Ga, Al)As quantum wells and superlattices under internal and external strain fields
002826 (1992) Optical transitions involving unconfined energy states in superlattices
002829 (1992) Optical properties and electronic structure of thin (Ga,In)As-AlAs multiple quantum wells and superlattices under internal and external strain fields
002A01 (1991) Modulated molecular beam epitaxy : a successful route toward high quality highly strained heterostructures
002A73 (1991) A new type of misfit dislocation multiplication process in InxGa1-xAs/GaAs strained-layer superlattices
002B71 (1990) Electron minibands and Wannier-Stark quantization in an Ino0.15Ga0.85As-GaAs strained-layer superlattice
002C49 (1989) Optical investigation of the band structure of InAs/GaAs short-period superlattices
002C50 (1989) On the determination of the nature of misfit dislocations in semiconductor strained-layer heterostructures

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