Strain rate < Strained layer < Strained quantum well

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List of bibliographic references

Number of relevant bibliographic references: 39.
[0-20] [0 - 20][0 - 39][20-38][20-40]

Ident.	Authors (with country if any)	Title
000073 (2013)		Band parameters of InGaAs/GaAs quantum dots: electronic properties study
000412 (2009)		Optical properties and energy transfer in InGaAsN quantum well - InAs quantum dots tunnel injection structures for 1.3 μm emission
000487 (2008)		Theoretical study of highly strained InAs material from first-principles modelling : application to an ideal QD
000728 (2007)		An evaluation of the growth of nitrides on semipolar substrates using two indicators
000770 (2006)		Strain state analysis of InGaN/GaN : sources of error and optimized imaging conditions
000955 (2005)		High In content pseudomorphic InGaAs layers for high-mobility heterostructures on InP (001)
000965 (2005)		First-principles calculations of 002 structure factors for electron scattering in strained InxGa1-xAs
000968 (2005)		Feasibility of III-V on-silicon strain relaxed substrates
000995 (2005)		Determination of In concentration in InGaAs/GaAs 001 epilayers in the early stage of anisotropic stress relaxation
000D72 (2003)		Experimental evidence for critical 2D nuclei in the 2D/3D growth mode transition of compressive and tensile strained InGaAs on InP(001)
000D93 (2003)		Characterization of piezoelectric and pyroelectric properties of MOVPE-grown strained (111)A InGaAs/GaAs QW structures by modulation spectroscopy
001138 (2001)		Thermally detected optical absorption, reflectance and photo-reflectance of In(As, P)/InP quantum wells grown by gas source molecular beam epitaxy
001240 (2001)		Growth of strained Ga1-xInxP layers on GaP (001) by gas source molecular beam epitaxy: similarities and differences with the growth of strained arsenides
001384 (2000)		Strained layer growth of Ga1-xInxP on GaAs (100) and GaP (100) substrates
001385 (2000)		Strained InAs nanostructures self-organised on high-index InP(113)B
001456 (2000)		Electronic structure of interdiffused GaInAs(P)/GaInAsP quantum wells
001476 (2000)		Charge density calculations for strained zinc blende GaN, InN and AlN
001506 (1999-12)		Instabilité de croissance dans les couches épitaxiées contraintes. Etude par microscopie à effet tunnel du système In1-xGaxAs / InP (001)
001630 (1999)		X-ray structure investigation of lateral surface nanostructures : a full quantitative analysis of non-uniform lattice strain
001635 (1999)		Transmission electron microscopy analysis of the shape and size of semiconductor quantum dots
001685 (1999)		Optical properties of (In, Ga)As/GaAs heterostructures grown on conventional (100) and (111)B GaAs substrates

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