Semiconductor laser < Semiconductor lasers < Semiconductor materials

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List of bibliographic references

Number of relevant bibliographic references: 183.
[0-20] [0 - 20][0 - 50][20-40]

Ident.	Authors (with country if any)	Title
000052 (2013)		InAs/AISb quantum cascade lasers operating near 20 μm
000126 (2012)		Growth optimization and characterization of lattice-matched Al0.82In0.18N optical confinement layer for edge emitting nitride laser diodes
000176 (2011)		Sputtered hydrogenated amorphous silicon thin films for distributed Bragg reflectors and long wavelength vertical cavity surface emitting lasers applications
000201 (2011)		Low noise Raman lasers for yellow-orange spectrum coverage
000208 (2011)		Interfaces as design tools for the InAs/GaSb/InSb short-period superlattice for mid-infrared emission
000250 (2011)		1.55 μm directly modulated CCIG lasers fabricated by surface-defined lateral feedback gratings
000259 (2010)		Theoretical and experimental investigations of the temperature dependent continuous wave lasing characteristics and the switch-on dynamics of an InAs/InGaAs quantum-dot semiconductor laser
000270 (2010)		Sb-based laser sources grown by molecular beam epitaxy on silicon substrates
000274 (2010)		QD laser on InP substrate for 1.55 μm emission and beyond
000278 (2010)		Polarization Properties of Columnar Quantum Dots: Effects of Aspect Ratio and Compositional Contrast
000286 (2010)		Overview of the EU FP7-project HISTORIC
000295 (2010)		Modelling of an InAs/GaSb/InSb short-period superlattice laser diode for mid-infrared emission by the k.p method
000312 (2010)		High-index-contrast subwavelength grating VCSEL
000358 (2010)		Analysis of carriers dynamics and laser emission in 1.55 μm InAs/InP(113)B quantum dot lasers
000382 (2009)		Theoretical analysis of 1.55-μm InAs/InP (113B) quantum dot lasers based on a multi-population rate equation model
000384 (2009)		The effect of hydrostatic pressure on the operation of quantum cascade lasers
000397 (2009)		Spectral Analysis of 1.55-μm InAs-InP(113)B Quantum-Dot Lasers Based on a Multipopulation Rate Equations Model
000418 (2009)		Modeling of tunnel junctions for current injection in Vertical Cavity Surface Emitting Lasers (VCSELs)
000422 (2009)		MBE growth of mid-IR diode lasers based on InAs/GaSb/InSb short-period superlattice active zones
000454 (2009)		Experimental and Theoretical Study of InAs/InGaAsP/InP Quantum Dash Lasers
000456 (2009)		Evidence of carrier leakage into the L-valley in InAs-based quantum cascade lasers under high hydrostatic pressure

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