Semiconductor lasers < Semiconductor materials < Semiconductor metal boundaries

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 1072.
[0-20] [0 - 20][0 - 50][20-40]

Ident.	Authors (with country if any)	Title
000013 (2013)		Theoretical Study on the Structure and Energetics of Cd Insertion and Cu Depletion of CuIn5Se8
000021 (2013)		Stability of InP oxide versus solvated electrons in liquid ammonia
000042 (2013)		Modeling of Ga1-xInxAs1-y-zNySbz/GaAs quantum well properties for near-infrared lasers
000061 (2013)		Epitaxial undoped indium oxide thin films: Structural and physical properties
000067 (2013)		Effect of GaN template thickness and morphology on AlxGa1-xN (0
000068 (2013)		Controlled Modulation of Diameter and Composition along Individual III-V Nitride Nanowires
000093 (2012)		Submicron Raman and photoluminescence topography of InAs/Al(Ga)As quantum dots structures
000094 (2012)		Structure and strain state of polar and semipolar InGaN quantum dots
000109 (2012)		Nature and origin of V-defects present in metalorganic vapor phase epitaxy-grown (InxAl1-x)N layers as a function of InN content, layer thickness and growth parameters
000123 (2012)		Improvement of InN layers deposited on Si(111) by RF sputtering using a low-growth-rate InN buffer layer
000189 (2011)		On the imaging of electron transport in semiconductor quantum structures by scanning-gate microscopy: successes and limitations
000225 (2011)		Electronic and Optical Modeling of Solar Cell Compounds CuGaSe2 and CuInSe2
000226 (2011)		Electron range-energy relationships for calculating backscattering coefficients in elemental and compound semiconductors
000237 (2011)		Crystallographic orientation transition of InP islands on SrTiO3 substrates with the growth temperature
000239 (2011)		Comparison of different dispersion models for single layer optical thin film index determination
000257 (2010)		Thermal conductance of the interfaces between the III-nitride materials and their substrates: Effects of intrinsic material properties and interface conditions
000262 (2010)		The effect of the excitation and of the temperature on the photoluminescence circular polarization of AlInAs/AlGaAs quantum dots
000279 (2010)		Plasticity of indium antimonide between -176°C and 400 °C under hydrostatic pressure. Part II: Microscopic aspects of the deformation
000280 (2010)		Plasticity of indium antimonide between -176 and 400 °C under hydrostatic pressure. Part I: Macroscopic aspects of the deformation
000307 (2010)		Influence of aluminum doping in CuInS2 prepared by spray pyrolysis on different substrates
000362 (2010)		AES, LEED and PYS investigation of Au deposits on InSe/Si( 1 1 1) substrate

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