Semiconductor epitaxial layers < Semiconductor growth < Semiconductor heterojunctions

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List of bibliographic references

Number of relevant bibliographic references: 78.
[0-20] [0 - 20][0 - 50][20-40]

Ident.	Authors (with country if any)	Title
000099 (2012)		Room-Temperature Terahertz Detectors Based on Semiconductor Nanowire Field-Effect Transistors
000A32 (2004-05-01)		From large to low height dispersion for self-organized InAs quantum sticks emitting at 1.55 μm on InP (001)
000A46 (2004-02-02)		Single photon emission from site-controlled pyramidal quantum dots
000C14 (2003-10-06)		Indium nitride quantum dots grown by metalorganic vapor phase epitaxy
000C16 (2003-09-01)		Molecular-beam epitaxial growth and characterization of quaternary III-nitride compounds
000C26 (2003-08-15)		Annealing effects on the crystal structure of GaInNAs quantum wells with large In and N content grown by molecular beam epitaxy
000C46 (2003-04-07)		In incorporation during the growth of quaternary III-nitride compounds by plasma-assisted molecular beam epitaxy
000C51 (2003-03-24)		GaInNAs/GaAs quantum wells grown by molecular-beam epitaxy emitting above 1.5 μm
000C61 (2003-02-01)		Surfactant effect of In for AlGaN growth by plasma-assisted molecular beam epitaxy
000D36 (2003)		Measurement of base and collector transit times in thin-base InGaAs/InP HBT
000E20 (2002-11-15)		Transmission electron microscopy study of the InP/InGaAs and InGaAs/InP heterointerfaces grown by metalorganic vapor-phase epitaxy
000E27 (2002-10-28)		Real-time assessment of In surface segregation during the growth of AlSb/InAs(Sb) heterostructures
000E48 (2002-07-01)		Surface effects on shape, self-organization and photoluminescence of InAs islands grown on InAlAs/InP(001)
000E66 (2002-05)		Structural and transport characterization of AlSb/InAs quantum-well structures grown by molecular-beam epitaxy with two growth interruptions
000E71 (2002-04-01)		Scattering mechanisms and electronic behavior in transparent conducting ZnxIn2Ox+3 indium-zinc oxide thin films
000E72 (2002-03-15)		Origin of the bimodal distribution of low-pressure metal-organic-vapor-phase-epitaxy grown InGaAs/GaAs quantum dots
001006 (2002)		High performance GaInNAs/GaNAs/GaAs narrow ridge waveguide laser diodes
001057 (2002)		0.12 μm transferred-substrate In0.52Al0.48As/In0.53Ga 0.47As HEMTs on silicon wafer
001059 (2001-12-01)		Stacking of metamorphic InAlAs/InGaAs heterostructures on GaAs substrate
001069 (2001-10-22)		Wide-range-tunable laterally coupled distributed feedback lasers based on InGaAsP-InP
001073 (2001-10-01)		Bimodal distribution of Indium composition in arrays of low-pressure metalorganic-vapor-phase-epitaxy grown InGaAs/GaAs quantum dots

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